Abstract
The study aimed to investigate the impact of random fluctuations in Schottky barrier formation at polar interfaces between InGaZnO4 (IGZO) and different metals, particularly in the context of device miniaturization. The investigation revealed that different metals can establish various crystalline IGZO interfaces to achieve Ohmic contact, regardless of their work function. Additionally, the study suggests that introducing In doping at the amorphous IGZO interface can effectively reduce the Schottky barrier when in contact with Al metal. These findings provide theoretical guidance for the miniaturization of source-drain contacts in IGZO devices.
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