SCAPS-1D Simulator Research Articles

A comprehensive investigation of the Sr3AsX3 (X = F/Cl/Br) inorganic cubic perovskites' strain-induced structural, electronic, optical, and mechanical properties with solar cell applications.

In comparison to the lead halide perovskites, nowadays, lead-free halide perovskites have demonstrated a number of benefits, including efficient optical absorption, increased stability, variable bandgap, excellent mobility of carriers, non-toxicity, abundant raw ingredients, and low manufacturing cost. The use of the Perdew-Burke-Ernzerhof (PBE) and Heyd-Scuseria-Ernzerhof (HSE) hybrid functional inside the quantum espresso software allowed for a thorough examination of these materials, potentially leading to improvements in the development of ecologically acceptable and economically sustainable perovskite-based products. This work has extensively examined the effects of compressive and tensile strain on the structural, optical, and electronic characteristics of the inorganic cubic perovskite Sr3AsX3 (X = F, Cl, Br) with varying X anion using first-principles density-functional theory (FP-DFT). At the Γ point, the unstrained Sr3AsF3, Sr3AsCl3, and Sr3AsBr3 compounds have a direct bandgap of 1.68/2.50 eV, 1.65/2.47 eV, and 1.522/2.30 eV, respectively, from the PBE/HSE methods. A drop in bandgap values occurs when the X-anion switches from F to Cl to Br. Furthermore, the bandgaps of the three proposed structures show a minor increase in response to tensile strain and a decreasing prevalence in response to compressive strain. The optical properties, which include dielectric functions, absorption coefficient, and electron loss function, are consistent with the band characteristics of these components, all of which point to a significant capability for absorption in the visible region. The dielectric constants of Sr3AsF3, Sr3AsCl3, and Sr3AsBr3 are discovered to have peaks that, with compressive strain, redshift (move towards lower photon energy) and, under tensile strain, blueshift (move towards upper photon energy). In comparison to the compounds Sr3AsF3 and Sr3AsCl3, the parameters indicate that the material Sr3AsBr3 is more optically advantageous. The SCAPS-1D simulator was used to methodically examine the photovoltaic (PV) performance of novel cell topologies that included SnS2 as an electron transport layer (ETL) and Sr3AsF3, Sr3AsCl3, and Sr3AsBr3 as absorbers and primarily 19.76, 19.89, and 20.89% PCE was achieved, respectively.

Influence of Band Alignment, Electric Field, Layer Thickness, Temperature, Series Resistance, and Shunt Resistance on Lead-Free Double Perovskite Solar Cells with Spiro-OMeTAD: A SCAPS-1D Simulation Study

Investigating the photovoltaic (PV) performance of lead-free double perovskite solar cells (DPSCs) with a structure comprising a fluorine-doped tin oxide (FTO) substrate, tungsten disulfide (WS2) as the electron transport layer (ETL), inorganic-lead free and non-toxic double perovskite La2NiMnO6 absorber, Spiro-OMeTAD as the hole transport layer (HTL), and gold (Au) electrode using the SCAPS-1D framework is crucial for optimizing their efficiency. Despite significant progress in DPSCs, there remains a research gap in understanding the fundamental mechanisms underlying their performance, particularly in optimizing material properties and device architectures for enhanced efficiency. This study focuses on optimizing the device architecture by investigating the impact of band alignment, electric field, layer thickness, temperature, series resistance, and shunt resistance on enhancing DPSC performance. Achieving an power conversion efficiency (PCE) of 18.51% with detailed analysis of the DPSCs highlights the key factors influencing their efficiency. These findings contribute valuable insights into enhancing the performance of DPSCs, advancing their potential for widespread adoption in solar energy conversion.

Solar power conversion: CuI hole transport layer and Ba3NCl3 absorber enable advanced solar cell technology boosting efficiency over 30.

Researchers are becoming more interested in novel barium-nitride-chloride (Ba3NCl3) hybrid perovskite solar cells (HPSCs) due to their remarkable semiconductor properties. An electron transport layer (ETL) built from TiO2 and a hole transport layer (HTL) made of CuI have been studied in Ba3NCl3-based single junction photovoltaic cells in a variety of variations. Through extensive numerical analysis using SCAPS-1D simulation software, we investigated elements such as layer thickness, defect density, doping concentration, interface defect density, carrier concentration, generation, recombination, temperature, series and shunt resistance, open circuit voltage (V OC), short circuit current (J SC), fill factor (FF), and power conversion efficiency (PCE). The study found that the HTL CuI design reached the highest PCE at 30.47% with a V OC of 1.0649 V, a J SC of 38.2609 mA cm-2, and an FF of 74.78%. These findings offer useful data and a practical plan for producing inexpensive, Ba3NCl3-based thin-film solar cells.

Optimization of high efficiency lead-free double perovskite Dy2NiMnO6 (DNMO) for optimal solar cell and renewable energy applications: a numerical SCAPS-1D simulation

(a) Crystal structure of Dy2NiMnO6. (b) Energy band alignment of an optimized solar cell structure of ITO/WS2/DNMO/CFTS/Au.

Utilizing machine learning to enhance performance of thin-film solar cells based on Sb2(S x Se1-x )3: investigating the influence of material properties.

Antimony chalcogenides (Sb2(S x Se1-x )3) have drawn attention as a potential semiconducting substance for heterojunction photovoltaic (PV) devices due to the remarkable optoelectronic properties and wide range of bandgaps spanning from 1.1 to 1.7 eV. In this investigation, SCAPS-1D simulation software is employed to design an earth abundant, non-toxic, and cost-effective antimony sulfide-selenide (Sb2(S,Se)3)-based thin-film solar cell (TFSC), where tungsten disulfide (WS2) and cuprous oxide (Cu2O) are used as an electron transport layer (ETL) and hole transport layer (HTL), respectively. The PV performance parameters such as power conversion efficiency, open-circuit voltage (V oc), short-circuit current (J sc), and fill factor (FF) are assessed through adjustments in material properties including thickness, acceptor concentration, bulk defect density of the absorber, defect state of absorber/ETL and HTL/absorber interfaces, operating temperature, work function of the rear electrode, and cell resistances. This analysis aims to validate their collective impact on the overall efficiency of the designed Ni/Cu2O/Sb2(S,Se)3/WS2/FTO/Al TFSC. The optimized physical parameters for the Sb2(S,Se)3 TFSC lead to impressive PV outputs with an efficiency of 30.18%, V oc of 1.02 V, J sc of 33.65 mA cm-2, and FF of 87.59%. Furthermore, an artificial neural network (ANN) machine learning (ML) algorithm predicts the optimal PCE by considering five semiconductor parameters: absorber layer thickness, bandgap, electron affinity, electron mobility, and hole mobility. This model, which has an approximate correlation coefficient (R 2) of 0.999, is able to predict the data with precision. This numerical analysis provides valuable data for the fabrication of an environmentally friendly, economical, and incredibly non-toxic efficient heterojunction TFSC.

Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D.

The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work. To increase all photovoltaic performance parameters, in this investigation, a novel solar cell structure (FTO/SnS2/CIGS/Sb2S3/Ni) is explored by utilizing the SCAPS-1D simulation software. Thicknesses of the buffer, absorber and back surface field (BSF) layers, acceptor density, defect density, capacitance-voltage (C-V), interface defect density, rates of generation and recombination, operating temperature, current density, and quantum efficiency have been investigated for the proposed solar devices with and without BSF. The presence of the BSF layer significantly influences the device's performance parameters including short-circuit current (Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (PCE). After optimization, the simulation results of a conventional CIGS cell (FTO/SnS2/CIGS/Ni) have shown a PCE of 22.14% with Voc of 0.91 V, Jsc of 28.21 mA cm-2, and FF of 86.31. Conversely, the PCE is improved to 31.15% with Voc of 1.08 V, Jsc of 33.75 mA cm-2, and FF of 88.50 by introducing the Sb2S3 BSF in the structure of FTO/SnS2/CIGS/Sb2S3/Ni. These findings of the proposed CIGS-based double heterojunction (DH) solar cells offer an innovative method for realization of high-efficiency solar cells that are more promising than the previously reported traditional designs.

Numerical analysis of the thin film solar cell modelled based on In doped CdS semiconductor

In this study, pure and 1%, 2% and %3 In-doped CdS thin films were produced by spray pyrolysis method. CdS is an n-type (II-VI group) semiconductor material and used as a buffer layer in solar cells. By doping In into CdS thin film, it was investigated how optical and crystalline behavior of thin film are changed. Using Moss and Herve&Vandamme and Ravindra relations, refractive indices and dielectric coefficients were investigated depending on the band gap of the obtained CdS sample. It has been observed that In element decreases the band gap of CdS thin film, improved its crystal structure and reduced its roughness. Therefore, 3% In doped CdS has gained a more ideal feature for use as an n-type semiconductor in solar cells. CIGS/In doped CdS solar cell was modelled and analysed by SCAPS-1D simulation program by using the physical parameters of the semiconductor layers that make up solar cells as imputs of program. Photovoltaic parameters of solar cell based on donor defect density, the neutral interface defect density and Auger electron/hole capture coefficient which were calculated by using In %3 doped CdS thin film, which has the most ideal n-type semiconductor properties.

SIMULATION STUDIES OF CR DOPED CUO HETEROJUNCTION SOLAR CELL

1% and 3% Cr doped CuO thin films have been deposited on soda lime glass by spin coating method and then their structural, morphological and optical properties have been investigated by operating X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Ultraviolet-Visible Spectroscopy (UV-Vis) techniques, respectively. XRD patterns of CuO:Cr (1%) and CuO:Cr (3%) thin films demonstrate characteristics of monoclinic CuO structure with a C2/c space group. The morphology of coated film plays an important role in analyzing some optoelectronic properties. 1% Cr doped CuO thin film absorbs more photons compared to 3% Cr doped CuO in Vis and UV regions. The band gaps of 1% Cr and 3% Cr doped CuO thin films are to be 2.18 eV and 2.30 eV, respectively. The Mo/1% and 3% Cr doped CuO/n-ZnO/i-ZnO/AZO solar cell has modelled with SCAPS-1D simulation program. The photovoltaic (PV) parameters of solar cell deteriorated with some increase in the neutral defect density (N_t) value. As the shallow acceptor defect density (N_a) value is increased, J_SC is decreased, V_OC, FF and η are increased. PV performance of 1% Cr doped CuO solar cell were found to be better than that of 3% Cr doped CuO solar cell. The efficiency of 1% Cr doped CuO solar cell is increased with the use of SnO2 intermediate layer in 2 nm thickness at the heterojunction interface.

High Efficiency (22.46) of Solar Cells Based on Perovskites

In this research we have considered (CH₃NH₃PbX₃) (X=I,Cl,Br) as an absorber layer and Cu2O/spiro-OMeTAD/ P3hT/PEDOT:PSS as (HTM) along with PCBM/TiO₂ as (ETM). It is a solid-state planar heterojunction p-i-n solar cell with low p-type-doped, CH₃NH₃PbX₃ sandwiched between the p-type is called HTM layer and n-type. SCAPS-1D simulation software is used for numerical simulation to examine the influence of various electrical factors on the efficiency PCBM/CH₃NH₃PbCl3/P3hT,PCBM /CH₃NH₃PbI₃/P3hT,PCBM/MAPbCl₃/Cu2O,TiO2/MAPbCl₃/Sipro-OMeTAD, TiO₂/MAPbI3/Sipro-OMeTAD, PCBM /CH₃NH₃PbBr3/ PEDOT:PSS, and PCBM /CH₃NH₃PbI₃/ PEDOT:PSS heterojunction-based perovskite solar cell structures. With these variables an efficiency of 22.46% was obtained at 263.15(k). By using SCAPS simulation software

Exploring the effect of interface properties between CeO x electron transport layer and MAPbI3 perovskite layer on solar cell performances through numerical simulation

Abstract Organo-metal halide perovskite solar cells (PSCs) have received a lot of attention to the photovoltaic research community, mainly due to the rapid development of their cell performances. But industry-level production of PSCs is hindered for several reasons. At present, the use of high-temperature processed electron transport layer (ETL) such as TIO2, the use of chemically unstable ETL such as ZnO and SnO2, etc. are ETL-related obstacles behind this industrialization. Aiming to remove these problems, cerium oxide (CeO x ), one of the most Earth-rich metal oxides has been chosen as ETL for this study. In this study, the SCAPS-1D simulation package has been used for an intensive study on ETL/PSK interface for a methylammonium lead iodide (MAPbI3)-based PSC having CeO x as ETL. From this simulation, the effect of conduction band offset (CBO) between CeO x and MAPbI3 has been found as the key player behind the cell performances. Defects at this interface have also been introduced and varied for studying their effects on cell performance at different CBO values. The temperature stability of a PSC is another important issue that has been considered in this study to find the effect of operating temperature on the PSC. This study would enlighten the researchers in implying some fantastic techniques at the ETL/PSK interface for improving the cell performance that will forward the research community a few steps to use CeO x as a promising ETL in PSC.

Boosting efficiency above 30 % of novel inorganic Ba3SbI3 perovskite solar cells with potential ZnS electron transport layer (ETL)

The inorganic Ba3SbI3 perovskite has emerged as a promising, stable absorber material for efficient and cost-effective solar cells, owing to its intriguing compositional, structural, electrical, and optical properties. This study delves into the potential of Iodide-based Ba3SbI3 perovskites, known for their relative stability, as absorbers in conjunction with a ZnS electron transport layer (ETL) to create a high-performance solar cell heterostructure. Using the SCAPS-1D simulator, we first estimate the absorption spectrum and bandgap of the Ba3SbI3 absorber layer through density functional theory (DFT). This obtained spectrum serves as a crucial input for device simulation. We further optimize the work function of the rear electrode to enhance the photovoltaic (PV) performance of the ZnS/Ba3SbI3 heterostructure solar cell. Various parameters including doping density, absorber thickness, and bulk/interface defect density are carefully considered. Additionally, we investigated generation and recombination rates, current density-voltage (J-V) characteristics, and corresponding quantum efficiency (QE). Under optimized conditions, our study achieves a remarkable maximum power conversion efficiency (PCE) of 30.49 %, accompanied by a photocurrent density (JSC) of 54.63 mA/cm2, fill factor (FF) of 83.75 %, and open circuit voltage (VOC) of 0.67 V in the ITO/ZnS/Ba3SbI3/Ni structure. This comprehensive analysis offers valuable insights and methodologies for the experimental design of high-performance and stable photovoltaic devices based on Ba3SbI3 perovskite.

Optimization of lead-free materials-based perovskite solar cell using SCAPS-1D simulation

Perovskite solar cells (PSCs) are the foremost transition in photovoltaics approaching commercialization. The tin-based perovskites take off the toxic lead-based perovskites in the solar cells. The parameters of each layer in the device play a significant role in the device performance graph. The main aim of this simulation is to design a highly efficient and environment-friendly PSC. The influence of parameters such as device temperature, total defect density, work function, thickness, and electron affinity plays a vital role in the photovoltaic response. Here, the active layer is explored in this study. After the SCAPS-1D simulation of FTO (fluorine-dopped oxide)/SnO2/FASnI3/CuI/Au based device, the impact of optimization of the device temperature and active layer, the performance parametric of the device is analyzed, which led to the breakthrough by a surprising rise in PCE of 30.33 %, VOC = 1.28 V, JSC = 27.72 mA/cm2 and FF = 85.33 % with active layer thickness of 450 nm, Nt = 1 × 1013 cm−3 and at the device operating temperature at 300K providing a valuable vision for tin-based perovskite applications.

Design and optimization of the performance of self-powered Sb2S3 photodetector by SCAPS-1D simulation and potential application in imaging

Antimony sulfide (Sb2S3) is considered an excellent semiconductor material for visible light photodetectors (PDs) due to the non-toxicity, stability and high visible photon absorption coefficient. However, the deep physical cascade relationship between Sb2S3 devices and key parameters, such as the thickness, the doping density, the defect density, and the inverse contact of the figure of merit, has not been thoroughly investigated. In order to systematically explore the impact of parameters on Sb2S3 device performance, self-powered optoelectronic devices of TiO2/Sb2S3 p-n heterojunction were simulated by using one-dimensional (SCAPS-1D) software. Base on simulation, we learned that the optimum thickness of Sb2S3 is about 400 nm, the donor and acceptor densities of TiO2 and Sb2S3 layers are 1020 and 1016 cm−3, respectively. In addition, Au was chosen as the back electrode, and the high-quality Sb2S3 functional layer required a defect density of less than 1016 cm−3. Based on the guidance of simulation results, we finally fabricated the FTO/TiO2/Sb2S3/Au self-powered photodetectors. Under an illumination intensity of 3 μW/cm2 at 530 nm, the responsivity (R) and specific detectivity (D*) of the device can be up to 0.357 A/W and 5.1 × 1011 Jones, respectively. Particularly, the device exhibits a fast response with a response time of 1.4 μs and 3 dB bandwidth of 383 kHz. In this regard, we constructed a single-pixel scanning imaging system around the Sb2S3 detector and showed excellent imaging results, which provided a new path for us to develop a new type of visible light detector and imaging system.

An in-depth analysis of how strain impacts the electronic, optical, and output performance of the Ca3NI3 novel inorganic halide perovskite

The incredible optical, structural, and electronic behaviors of inorganic type perovskite compounds have recently attracted considerable interest in the area of solar innovation. This study thoroughly investigated how it affects both tensile and compressive strain on the physical, optical, as well as electronic behaviors that exist in the cubic inorganic Ca3NI3 perovskite using FP-DFT, or first-principles density functional theory. The planar structure of the unstrained Ca3NI3 molecule at the location revealed a direct bandgap of 1.077 eV/1.61 eV using the PBE/HSE technique. The bandgap of the Ca3NI3 perovskite was reduced to 0.827 eV by taking into account the impact of spin-orbit coupling (SOC). Additionally, the bandgap of the framework showed a tendency to decrease under compressive pressure (0.932 eV in −4% strain) and slightly increase under tensile strain (1.187 eV in +4 % strain). According to an analysis of the band characteristics, visible light can be significantly absorbed by the substance as shown by optical parameters like absorption coefficients, reflectivity, dielectric functions, and electron loss functions. The static dielectric constant, ε1(0) of Ca3NI3 is 6.96, the location of the initial critical point in, ɛ2(ω) is 1.07 eV, the energy range of the large absorption peak is 7.2–7.6 eV, peak location of loss function is 8.7–9.3 eV and reflectivity at 0 eV is 4.8. The Ca3NI3 dielectric constant spikes shifted to lower photon energy as a result of a redshift brought on by an increase in compressive strain. On the other hand, as tensile strain increased, the material showed a blue shift, resulting in an increase in photon energy. Finally, using the SCAPS-1D simulator, the photovoltaic (PV) performance of novel Ca3NI3 absorber-based cell architectures with SnS2 as the Electron Transport Layer (ETL) was thoroughly examined under varied compressive and tensile strain. The greatest power conversion efficiency (PCE) was found to be 31.35 % with JSC of 39.43 mA/cm2, FF of 85.47 %, VOC of 0.9301 V for maximum 4 % tensile strain. These findings suggest that the Ca3NI3 perovskite may be suitable for solar cell applications including energy production and light management in near future.

Optimization of Perovskite-KSnI3 Solar Cell by Using Different Hole and Electron Transport Layers: A Numerical SCAPS-1D Simulation

Optimization of Perovskite-KSnI₃ Solar Cell by Using Different Hole and Electron Transport Layers: A Numerical SCAPS-1D Simulation

Simulation and numerical modeling of high‐efficiency CZTS solar cells with a BSF layer

AbstractThe present paper deals with the photovoltaic performance‐based numerical evaluation of copper–zinc–tin–sulfur (CZTS) solar cells embedded with CZTSe as a back surface field (BSF) layer. CZTS has been considered a leading candidate for the fabrication of solar devices owing to its availability and absence of toxicity. Adding a BSF layer to a solar device is a novel way to boost efficiency. It reduces the recombination of the carriers at the back surface, thus increasing the overall current output of the solar cells. SCAPS 1D simulator is used to study the impact of several parameters on electrical properties like temperature, the thickness of the CZTS layer, acceptor doping concentration, and the impact of series and shunt resistances. Considering the optimized parameters in each layer of the solar cells, this work delivers 24.7% efficiency with the BSF layer, which is 8% more than that without the BSF layer. The results of this modeling will facilitate researchers to fabricate a highly efficient CZTS solar cell.

Investigating Ag2S quantum dot buffer layer in CZTSSe photovoltaics for enhanced performance

This study focuses on optimizing the performance of CZTSSe (Copper Zinc Tin Sulphide/Selenide) photovoltaic (PV) cells by incorporating an Ag2S quantum dot (QD) buffer layer. CZTSSe, with its significant Direct bandgap (1–1.5 eV) and the absorption coefficient (>104 cm−1), shows promise for efficient visible-range light absorption. Ag2S quantum dots, known in terms of their favourable attributes, such as high absorption, low solubility, and minimal surface recombination, are explored as a buffer layer material. The effects of the Ag2S quantum dot (QD) buffer layer on the optical and electrical characteristics of CZTSSe photovoltaic (PV) cells are comprehensively examined using simulation characterization. Key parameters, including Short-circuit (JSC), fill factor (FF), open-circuit voltage (VOC), and power conversion efficiency (PCE), are analyzed to validate device characteristics. The SCAPS-1d simulator is employed for performance assessment and enhancement through tuning device parameters such as energy bandgap, absorber layer thickness, buffer layer thickness, defect density, and acceptor concentrations of the absorber and hole transport layer (HTL), and donor concentrations of the buffer. Additionally, temperatures, as well as series-shunt resistance’s influence on device effectiveness, are explored. The study aims to maximize light absorption, enhance charge conduction, reduce carrier loss due to recombination, and upgrade CZTSSe PV cells’ overall performance. The CZTSSe solar unit achieves its highest PCE of 27.56% when employing an Ag2S buffer layer and Cu2O hole transport layer. The study provides valuable knowledge about the optimization of CZTSSe solar cells and the potential benefits of utilizing Ag2S QD in the role of buffer layer material. This research contributes to the understanding of enhancing CZTSSe PV cell performance through the incorporation of Ag2S QD buffer layers and presents pragmatic directives that can be employed to facilitate the progression of CZTSSe-based photovoltaic devices.

Investigating the Performance of Efficient and Stable Planer Perovskite Solar Cell with an Effective Inorganic Carrier Transport Layer Using SCAPS-1D Simulation

Organic–inorganic metal halide perovskite (OIMHP) has emerged as a promising material for solar cell application due to their outstanding optoelectronics properties. The perovskite-based solar cell (PSC) demonstrates a significant enhancement in efficiency of more than 20%, with a certified efficiency rating of 23.13%. Considering both the Shockley limit and bandgap, there exists a substantial potential for further efficiency improvement. However, stability remains a significant obstacle in the commercialization of these devices. Compared to organic carrier transport layers (CTLs), inorganic material such as ZnO, TiO2, SnO2, and NiOX offer the advantage of being deposited using atomic layer deposition (ALD), which in turn improves the efficiency and stability of the device. In this study, methylammonium lead iodide (MAPbI3)-based cells with inorganic CTL layers of SnO2 and NiOX are simulated using SCAPS-1D software. The cell structure configuration comprises ITO/SnO2/CH3NH3PbI3/NiOX/Back contact where SnO2 and NiOX act as ETL and HTL, respectively, while ITO is a transparent front-end electrode. Detailed investigation is carried out into the influence of various factors, including MAPbI3 layer size, the thickness of CTLs, operating temperature parasitic resistance, light intensity, bulk defects, and interfacial defects on the performance parameters. We found that the defects in layers and interface junctions greatly influence the performance parameter of the cell, which is eliminated through an ALD deposition approach. The optimum size of the MAPbI3 layer and CTL was found to be 400 nm and 50 nm, respectively. At the optimized configuration, the PSC demonstrates an efficiency of 22.13%, short circuit current (JSC) of 20.93 mA/m2, open circuit voltage (VOC) of 1.32 V, and fill factor (FF) of 70.86%.

Design and simulation of Cu2SnSe3-based solar cells using various hole transport layer (HTL) for performance efficiency above 32%

Abstract The current research investigates the (Ni/V2O5/Cu2SnSe3/In2S3/ITO/Al) novel heterostructure of Cu2SnSe3-based solar cell numerically using the SCAPS-1D simulator. The goal of this study is to determine how the proposed cell’s performance will be impacted by the V2O5 hole transport layer and the In2S3 electron transport layer. To enhance cell performances, the effects of thickness, carrier concentration and defect in the absorber layer, electron concentration, hole concentration, total generation and recombination, interface defect, J-V and Q-E characteristics, and operating temperature are investigated. Our preliminary simulation results demonstrate that, in the absence of V2O5 HTL, the efficiency of a conventional Cu2SnSe3 cell is 22.14%, a value that is in suitable agreement with the published experimental values. However, a simulated efficiency of up to 32.34% can be attained by using the HTL and ETL combination of V2O5 and In2S3, respectively, and optimized device parameters. The ideal carrier concentration and layer thickness for the Cu2SnSe3 absorber layer are, 1018 cm−3 and 1000 nm, respectively,. However, it is also seen that for optimum device performances, the back-contact metal work function (BMWF) must be higher than 5.22 eV. The outcomes of this contribution may open up useful research directions for the thin-film photovoltaic sector, enabling the production of high-efficient and low-cost Cu2SnSe3-based PV cells.

Improving efficiency of [formula omitted] CoSn [formula omitted] solar cells using an HTL layer: A numerical study

In recent years, the material copper cobalt tin sulfur Cu2 CoSn S4 (CCTS) has attracted a lot of attention in photovoltaic applications because of its gap energy close to 1.5 eV. However, the efficiency of CCTS-based solar cells is still low. In our study, we presented a numerical study of a CCTS-based solar cell with a Mo/CCTS/ZnS/ITO structure using the SCAPS-1D simulator. Each layer of our solar cell was optimized separately, and the effect of the back contact electrode was also studied. We obtained the best performance using Pt as the back contact electrode. However, to reduce production costs, we used Mo as the back contact electrode, which caused a problem with the appearance of a Schottky barrier between Mo and CCTS. To solve this problem, we used an HTL layer between CCTS and Mo, which improved the efficiency of our cell from 24 % to 32 %. Also, in our work, we evaluate the effect of parasitic resistances (Rs, Rsh) and temperature on the performance of our solar cell.