Abstract
In recent years, the material copper cobalt tin sulfur Cu2 CoSn S4 (CCTS) has attracted a lot of attention in photovoltaic applications because of its gap energy close to 1.5 eV. However, the efficiency of CCTS-based solar cells is still low. In our study, we presented a numerical study of a CCTS-based solar cell with a Mo/CCTS/ZnS/ITO structure using the SCAPS-1D simulator. Each layer of our solar cell was optimized separately, and the effect of the back contact electrode was also studied. We obtained the best performance using Pt as the back contact electrode. However, to reduce production costs, we used Mo as the back contact electrode, which caused a problem with the appearance of a Schottky barrier between Mo and CCTS. To solve this problem, we used an HTL layer between CCTS and Mo, which improved the efficiency of our cell from 24 % to 32 %. Also, in our work, we evaluate the effect of parasitic resistances (Rs, Rsh) and temperature on the performance of our solar cell.
Published Version
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