Scanning Tunneling Microscopy Images Research Articles

Br-Vacancies Induced Variable Ranging Hopping Conduction in High-Order Topological Insulator Bi4Br4.

The defects have a remarkable influence on the electronic structures and the electric transport behaviors of the matter, providing the additional means to engineering their physical properties. In this work, a comprehensive study on the effect of Br-vacancies on the electronic structures and transport behaviors in the high-order topological insulator Bi4Br4 is performed by the combined techniques of the scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and physical properties measurement system along with the first-principle calculations. The STM results show the defects on the cleaved surface of a single crystal and reveal that the defects are correlated to the Br-vacancies with the support of the simulated STM images. The role of the Br-vacancies in the modulation of the band structures has been identified by ARPES spectra and the calculated energy-momentum dispersion. The relationship between the Br-vacancies and the semiconducting-like transport behaviors at low temperature has been established, implying a Mott variable ranging hopping conduction in Bi4Br4. The work not only resolves the unclear transport behaviors in this matter, but also paves a way to modulate the electric conduction path by the defects engineering.

Revealing the Influence of Molecular Chemisorption Direction on the Reaction Selectivity of Dehalogenative Coupling on Au(111): Polymerization versus Cyclization.

The control of reaction selectivity is of great interest in chemistry and depends crucially on the revelation of key influencing factors. Based on well-defined molecule-substrate model systems, various influencing factors have been elucidated, focusing primarily on the molecular precursors and the underlying substrates themselves, while interfacial properties have recently been shown to be essential as well. However, the influence of molecular chemisorption direction on reaction selectivity, as a subtle interplay between molecules and underlying substrates, remains elusive. In this work, by a combination of scanning tunneling microscopy imaging and density functional theory calculations, we report the influence of molecular chemisorption direction on the reaction selectivity of two types of dehalogenative coupling on Au(111), i.e., polymerization and cyclization, at the atomic level. The diffusion step of a reactive dehalogenated intermediate in two different chemisorption directions was theoretically revealed to be the key to determining the corresponding reaction selectivity. Our results highlight the important role of molecular chemisorption directions in regulating the on-surface dehalogenative coupling reaction pathways and products, which provides fundamental insights into the control of reaction selectivity by exploiting some subtle interfacial parameters in on-surface reactions for the fabrication of target low-dimensional carbon nanostructures.

Machine-Learning driven STM images prediction of doped/defective graphene: Towards optimized tools for 2D nanomaterials characterization

Scanning tunneling microscopy (STM) is a key characterization technique that allows for visualization of specific features at nanostructures, given its ability to reveal changes in local charge densities in doping or defective sites. Besides the experimental acquisition of STM data from real samples, there is the theoretical route, which allows for STM images simulation from ab-initio calculations on defined nanostructures. This work presents an alternative route for theoretical STM image prediction by means of Machine Learning (ML) methods, based on the training of deep convolutional neural networks using simulated STM data. The ML-based STM predictions for defective, B- and N-doped graphene quantum dots are compared to ab-initio STM simulations, in terms of accuracy of structural rearrangements, charge density localizations, and computational resources requirements. The results demonstrate that STM images predicted by ML-methods are accurate at doping sites, whereas they show good similarity to simulations of large structural vacancies. This work represents a novel alternative for the use of ML methods in image-based characterization routines of doped/defective graphene, and potentially, for other 2-dimensional nanomaterials.

Implementation of the Su-Schrieffer-Heeger Model in the Self-Assembly Si-In Atomic Chains on the Si(553)-Au Surface.

Indium-decorated Si atomic chains on a stepped Si(553)-Au substrate are proposed as an extended Su-Schrieffer-Heeger (SSH) model, revealing topological end states. An appropriate amount of In atoms on the Si(553)-Au surface induce the self-assembly formation of trimer SSH chains, where the chain unit cell comprises one In atom and two Si atoms, confirmed by scanning tunneling microscopy images and density functional calculations. The electronic structure of the system, examined through scanning tunneling spectroscopy, manifests three electron bands within the Si-In chain, accompanied by additional midgap topological states exclusively appearing at the chain's end atoms. To elucidate the emergence of these topological states, a tight-binding model for a finite-length-extended SSH chain is proposed. Analysis of the energy spectra, density of states functions, and eigenfunctions demonstrates the topological nature of these self-assembled atomic chains.

First principle calculations to explore the electronic, mechanical and optical properties of 2D NiX2 (X = O, S, Se) monolayers

This investigation employs ab-initio calculations to investigate the structural, dynamical, mechanical, and optoelectronic attributes of 1T-NiX2 (X = O, S, Se) monolayers. The confirmation of structural and dynamical stability is derived from negative cohesive energy values and the absence of negative frequencies in phonon dispersion spectra. Mechanical stability is established through the application of the Born-Huang stability criterion. Results indicate that an increase in the X-atom size from O to Se induces a reduction in material stiffness from 137.64 Nm−1 to 77.56 Nm−1 and thus, enhances the flexibility of the monolayers. The NiX2 monolayers exhibit indirect bandgap features with values 1.33 eV (1.81 eV), 0.63 eV (0.61 eV) and 0.28 eV (0.28 eV) using PBE (PBE+U) methods. Present results show an inverse relations between the band gap and the size of the X atom. The scanning tunnelling microscope (STM) images of 2D NiX2 monolayers are also simulated for experimental observations. Additionally, exploration of optical characteristics reveals high optical absorption (105 cm−1), which lies from infrared to UV-region. Moreover, NiO2 can be utilized as good wave anti-reflectors with reflection of incident light less than 7%. These results suggest NiX2 materials as promising candidates for diverse applications in optoelectronic and photovoltaic devices.

Modeling the phase boundaries in Cu(100)-(2√2 × √2)R45°-O missing row reconstruction (MRR) structure

Although the structure of Cu(100)-(22×2)R45°-O missing row reconstruction (MRR) has been well-established for decades, the detailed structure of its various boundaries remains an untilled area due to the difficulties in obtaining atomically resolved images. Herein, atomic arrangement of the phase boundaries existing in MRR structure was modeled on the basis of scanning tunneling microscopy (STM) investigations. By determining the periodicity and unit structure of MRR in STM images and extending them to boundary region, several types of phase boundaries were identified, resulted respectively from: (1) the mismatch between c(2 × 2)-O patches, (2) the regulation by step edges, and (3) the mismatch between Cu missing rows (MRs). With the modeled structure, it was revealed that the types of the c(2 × 2)-O mismatch induced phase boundaries (OMIPBs) are mainly dominated by the oxygen exposure and in-diffusion barrier. The step edge regulated phase boundaries (SERPBs) are always terminated with Cu-O chain and may represent an intermediate growth stage to larger MRR structure. Comparatively, Cu MRs mismatch is often reconciled by the differently oriented domains between them. As a result, the Cu MRs mismatch induced phase boundaries (CMRMIPBs) are only occasionally observed as Cu-O chains between mismatched Cu MRs that encounter shoulder-to-shoulder. For all studied boundaries, the surrounding MRR domains exhibit obvious orientation preference through inclined packing along the SP direction with the degree closely related with the width of the boundaries.

Wavefront distortion correction in scanning tunneling microscope image.

We report an algorithm to identify and correct distorted wavefronts in atomic resolution scanning tunneling microscope images. This algorithm can be used to correct nonlinear in-plane distortions without prior knowledge of the physical scanning parameters, the characteristics of the piezoelectric actuator, or individual atom positions. The 2D image is first defined as a sum of sinusoidal plane waves, where a nonlinear distortion renders a curve for an otherwise ideal linear wavefront. Using the Fourier transforms of local areas of the image, the algorithm generates a wavefront vector field. The identified wavefronts are subsequently linearized for each plane wave without changing lattice orders, giving rise to distortion corrections. Our algorithm is complementary to conventional post-processing algorithms that require prior detection of real space features, which can also be used to correct nonlinear distortions in 2D images acquired by other microscopy techniques.

Scanning Tunneling Microscopy for Molecules: Effects of Electron Propagation into Vacuum.

Using scanning tunneling microscopy (STM), we experimentally and theoretically investigate isolated platinum phthalocyanine (PtPc) molecules adsorbed on an atomically thin NaCl(100) film vapor deposited on Au(111). We obtain good agreement between theory and constant-height STM topography. We theoretically examine why strong distortions of STM images occur as a function of distance between the molecule and the STM tip. The images of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) exhibit for increasing distance, significant radial expansion due to electron propagation in the vacuum. Additionally, the imaged angular dependence is substantially distorted. The LUMO image has substantial intensity along the molecular diagonals where PtPc has no atoms. In the electronic transport gap, the image differs drastically from HOMO and LUMO even at energies very close to these orbitals. As the tunneling becomes increasingly off-resonant, the eight angular lobes of the HOMO or of the degenerate LUMOs diminish and reveal four lobes with maxima along the molecular axes, where both, HOMO and LUMO have little or no weight. These images are strongly influenced by low-lying PtPc orbitals that have simple angular structures.

Formation of Supernarrow Borophene Nanoribbons

Borophenes have sparked considerable interest owing to their fascinating physical characteristics and diverse polymorphism. However, borophene nanoribbons (BNRs) with widths less than 2 nm have not been achieved. Herein, we report the experimental realization of supernarrow BNRs. Combining scanning tunneling microscopy imaging with density functional theory modeling and ab initio molecular dynamics simulations, we demonstrate that, under the applied growth conditions, boron atoms can penetrate the outermost layer of Au(111) and form BNRs composed of a pair of zigzag (2,2) boron rows. The BNRs have a width self‐contained to ∼1 nm and dipoles at the edges to keep them separated. They are embedded in the outermost Au layer and shielded on top by the evacuated Au atoms, free of the need for post‐passivation. Scanning tunneling spectroscopy reveals distinct edge states, primarily attributed to the localized spin at the BNRs’ zigzag edges. This work adds a new member to the boron material family and introduces a new physical feature to borophenes.

Formation of Supernarrow Borophene Nanoribbons.

Borophenes have sparked considerable interest owing to their fascinating physical characteristics and diverse polymorphism. However, borophene nanoribbons (BNRs) with widths less than 2 nm have not been achieved. Herein, we report the experimental realization of supernarrow BNRs. Combining scanning tunneling microscopy imaging with density functional theory modeling and ab initio molecular dynamics simulations, we demonstrate that, under the applied growth conditions, boron atoms can penetrate the outermost layer of Au(111) and form BNRs composed of a pair of zigzag (2,2) boron rows. The BNRs have a width self-contained to ∼1 nm and dipoles at the edges to keep them separated. They are embedded in the outermost Au layer and shielded on top by the evacuated Au atoms, free of the need for post-passivation. Scanning tunneling spectroscopy reveals distinct edge states, primarily attributed to the localized spin at the BNRs' zigzag edges. This work adds a new member to the boron material family and introduces a new physical feature to borophenes.

Automated Structure Discovery for Scanning Tunneling Microscopy.

Scanning tunneling microscopy (STM) with a functionalized tip apex reveals the geometric and electronic structures of a sample within the same experiment. However, the complex nature of the signal makes images difficult to interpret and has so far limited most research to planar samples with a known chemical composition. Here, we present automated structure discovery for STM (ASD-STM), a machine learning tool for predicting the atomic structure directly from an STM image, by building upon successful methods for structure discovery in noncontact atomic force microscopy (nc-AFM). We apply the method on various organic molecules and achieve good accuracy on structure predictions and chemical identification on a qualitative level while highlighting future development requirements for ASD-STM. This method is directly applicable to experimental STM images of organic molecules, making structure discovery available for a wider scanning probe microscopy audience outside of nc-AFM. This work also allows more advanced machine learning methods to be developed for STM structure discovery.

Nano-infrared imaging of epitaxial graphene on SiC revealing doping and thickness inhomogeneities

We report on a nano-infrared (IR) imaging and spectroscopy study of epitaxial graphene on silicon carbide (SiC) by using scattering-type scanning near-field optical microscopy (s-SNOM). With nano-IR imaging, we reveal in real space microscopic domains with distinct IR contrasts. By analyzing the nano-IR, atomic force microscopy, and scanning tunneling microscopy imaging data, we conclude that the imaged domains correspond to single-layer graphene, bilayer graphene (BLG), and higher-doped BLG. With nano-IR spectroscopy, we find that graphene can screen the SiC phonon resonance, and the screening is stronger at more conductive sample regions. Our work offers insights into the rich surface properties of epitaxial graphene and demonstrates s-SNOM as an efficient and effective tool in characterizing graphene and possibly other two-dimensional materials.

Separation of Halogen Atoms by Sodium from Dehalogenative Reactions on a Au(111) Surface.

On-surface dehalogenative reactions have been promising in the construction of nanostructures with diverse morphologies and intriguing electronic properties, while halogen (X), as the main byproduct, often impedes the formation of extended nanostructures and property characterization, and the reaction usually requires high C-X activation temperatures, especially on relatively inert Au(111). Enormous efforts in precursor design, halogen-to-halide conversion, and the introduction of extrinsic metal atoms have been devoted to either eliminating dissociated halogens or reducing reaction barriers. However, it is still challenging to separate halogens from molecular systems while facilitating C-X activation under mild conditions. Herein, a versatile halogen separation strategy has been developed based on the introduction of extrinsic sodium (Na) into dehalogenative reactions on Au(111) as model systems that both isolates the dissociated halogens and facilitates the C-Br activation under mild conditions. Moreover, the combination of scanning tunneling microscopy imaging and density functional theory calculations reveals the formation of sodium halides (NaX) from halogens in these separation processes as well as the reduction in reaction temperatures and barriers, demonstrating the versatility of extrinsic sodium as an effective "cleaner" and "dehalogenator" of surface halogens. Our study demonstrates a valuable strategy to facilitate the on-surface dehalogenative reactions, which will assist in the precise fabrication of low-dimensional carbon nanostructures.

First-principles simulations of scanning tunneling microscopy images exhibiting anomalous dot patterns on armchair-edged graphene nanoribbons

First-principles simulations of scanning tunneling microscopy images exhibiting anomalous dot patterns on armchair-edged graphene nanoribbons

Atom-resolved imaging with a silicon tip integrated into an on-chip scanning tunneling microscope.

Limited throughput is a shortcoming of the Scanning Tunneling Microscope (STM), particularly when used for atomically precise lithography. To address this issue, we have developed an on-chip STM based on Microelectromechanical-Systems (MEMS) technology. The device reported here has one degree of freedom, replacing the Z axis in a conventional STM. The small footprint of the on-chip STM provides a great opportunity to increase STM throughput by incorporating a number of on-chip STMs in an array to realize parallel STM. The tip methodology adopted for the on-chip STM presented here, which is a batch-fabricated Si tip, makes our design conducive to this goal. In this work, we investigate the capability of this on-chip STM with an integrated Si tip for STM imaging. We integrate the on-chip STM into a commercial ultrahigh-vacuum STM system and perform imaging with atomic resolution on par with conventional STMs but at higher scan speeds due to the higher sensitivity of the MEMS actuator relative to a piezotube. The results attest that it is possible to achieve a parallel and high-throughput STM platform, which is a fully batch-fabricated MEMS STM nanopositioner capable of performing atomic-resolution STM imaging.

Natural formation of linear defect structures in MoS2

Near surface defects can significantly impact the quality of metallic interconnects and other interfaces necessary to create device structures incorporating two-dimensional materials. Furthermore, the impact of such defects can strongly depend on their organization. In this study, we present scanning tunneling microscopy images and tunneling spectroscopy of point and linear defects near the surface of natural MoS2. The point defects share similar structural and electronic characteristics and occur with comparable frequency as subsurface sulfur vacancies observed previously on natural MoS2. The linear defects observed here occur less frequently than the point defects but share the same depth profile and electronic structure. These data indicate that the linear defects are actually a one-dimensional organization of subsurface sulfur vacancies. Our density functional calculations agree with this assessment in that, for sufficient local defect concentrations, it is energetically more favorable for the defects to be organized in a linear fashion rather than as clusters or even isolated single point defects. Given these measurements were taken from naturally formed MoS2, this organization likely occurs during crystal formation. Considering the impact of one-dimensional organization on the local properties of layered materials, and the potential for them to be introduced purposefully during crystal formation, research into the formation mechanism and properties of these defects could enable new paths for defect engineering in MoS2-based systems.

Automated Generation and Analysis of Molecular Images Using Generative Artificial Intelligence Models.

The development of scanning probe microscopy (SPM) has enabled unprecedented scientific discoveries through high-resolution imaging. Simulations and theoretical analysis of SPM images are equally important as obtaining experimental images since their comparisons provide fruitful understandings of the structures and physical properties of the investigated systems. So far, SPM image simulations are conventionally based on quantum mechanical theories, which can take several days in tasks of large-scale systems. Here, we have developed a scanning tunneling microscopy (STM) molecular image simulation and analysis framework based on a generative adversarial model, CycleGAN. It allows efficient translations between STM data and molecular models. Our CycleGAN-based framework introduces an approach for high-fidelity STM image simulation, outperforming traditional quantum mechanical methods in efficiency and accuracy. We envision that the integration of generative networks and high-resolution molecular imaging opens avenues in materials discovery relying on SPM technologies.

Another Piece of the Ionic Liquid's Puzzle: Adsorption of Cl- Ions.

Classical electrochemical and microscopy methods were used to characterize the interfacial processes of the adsorption of chloride ions from ionic liquids at the Bi(111) single crystal electrode. The mixture of 1-ethyl-3-methylimidazolium tetrafluoroborate and 1-ethyl-3-methylimidazolium chloride was electrochemically characterized by using cyclic voltammetry and electrochemical impedance spectroscopy. In situ scanning tunneling microscopy images showed the formation of superstructures at the electrode's surface over an extended period of time. The specific adsorption of chloride ions reaches an equilibrium state in a more viscous ionic liquid medium slower than in aqueous and organic solvents. Capacitance values increase considerably (also depending on alternative current frequency) at the potential region, where the specific adsorption of chloride ions with partial charge transfer occurs.

Visualization of Alternating Triangular Domains of Charge Density Waves in 2H-NbSe_{2} by Scanning Tunneling Microscopy.

The charge density wave (CDW) state of 2H-NbSe_{2} features commensurate domains separated by domain boundaries accompanied by phase slips known as discommensurations. We have unambiguously visualized the structure of CDW domains using a displacement-field measurement algorithm on a scanning tunneling microscopy image. Each CDW domain is delimited by three vertices and three edges of discommensurations and is designated by a triplet of integers whose sum identifies the types of commensurate structure. The observed structure is consistent with the alternating triangular tiling pattern predicted by a phenomenological Landau theory. The domain shape is affected by crystal defects and also by topological defects in the CDW phase factor. Our results provide a foundation for a complete understanding of the CDW state and its relation to the superconducting state.

Scanning tunneling microscopy study of epitaxial Fe3GeTe2 monolayers on Bi2Te3

Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and outwards from Bi2Te3 steps. Atomic resolution imaging shows triangular lattices of 390 ± 10 pm for FGT and 430 ± 10 pm for Bi2Te3, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 ± 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignment. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a 3 x 3R30∘ reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism measurements confirm these thin FGT films are ferromagnetic with T C ∼190 K.