Scanning Transmission Electron Microscopy Measurements Research Articles

Influence of an ultrathin Mn ‘spy layer’ on the static and dynamic magnetic coupling within FePt/NiFe bilayers

Abstract We explore whether insertion of an ultrathin Mn ‘spy layer’ within a magnetic hard/soft bilayer can enable depth-sensitive element-specific measurements of the static and dynamic magnetization, while avoiding significant disruption of the original magnetic state. MgO(110)/FePt(100 Å)/NiFe(200 Å)/Mn(t Mn Å)/NiFe(200 Å) samples with Mn thicknesses of t Mn = 0, 5, and 10 Å were fabricated by magnetron sputtering and studied by element-selective x-ray magnetic circular dichroism (XMCD), vector network analyzer ferromagnetic resonance (VNA-FMR), and x-ray detected ferromagnetic resonance (XFMR). For t Mn = 5 Å, the magnetic reversal properties remain broadly similar to t Mn = 0 Å. For t Mn = 10 Å, the two NiFe layers decouple with XMCD hysteresis loops at the Mn edge showing two switching events that suggest the presence of two distinct Mn-containing regions. While the Mn moments within each region have ferromagnetic order, their relative alignment is antiparallel at high field. Analysis of the magnetic data and additional scanning transmission electron microscopy measurements point to the presence of a Mn layer at the lower NiFe/Mn interface, and the formation of a NiFeMn alloy at the upper Mn/NiFe interface. The Mn moments of the former region lie antiparallel to those of the underlying NiFe layer. The VNA-FMR data suggests that for t Mn = 5 and 10 Å, the interfacial exchange coupling at the FePt/NiFe is suppressed and the in-plane uniaxial magnetic anisotropy of the NiFe is increased, perhaps due to migration of Mn towards the buried interface. The above findings show that Mn is a problematic magnetic spy, and that a Mn thickness of less than 5 Å would be required.

Heterogeneous Integration of High Endurance Ferroelectric and Piezoelectric Epitaxial BaTiO3 Devices on Si

AbstractIntegrating epitaxial BaTiO3 (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal substrates followed by transfer to a desired substrate show promise of achieving excellent device‐quality films. However, beyond simple demonstrations of the existence of ferroelectricity, robust devices with high endurance are not yet demonstrated on Si using the latter approach. Here, using a novel two‐step approach to synthesize epitaxial BTO using pulsed laser deposition on water‐soluble Sr3Al2O6 (on SrTiO3 substrates), successful integration of high‐quality BTO capacitors on Si is demonstrated, with remanent polarisation Pr = 7 µC cm−2, coercive field Ec = 150 kV cm−1, ferroelectric and electromechanical endurance of > 106 cycles. The study further addresses the challenge of cracking and disintegration of thicker films by first transferring a large area (5 mm x 5 mm) of the templated layer of BTO (≈30 nm thick) on the desired substrate, followed by the growth of high‐quality BTO on this substrate, as revealed by high‐resolution X‐ray diffraction (HRXRD) and high‐resolution scanning transmission electron microscopy (HRSTEM) measurements. These templated Si substrates offer a versatile platform for integrating any epitaxial complex oxides with diverse functionalities onto any inorganic substrate.

The role of SiO2 buffer layer in the molecular beam epitaxy growth of CsPbBr3 perovskite on Si(111)

Here we present the growth of molecular beam epitaxy (MBE) CsPbBr3 perovskite films in the orthorhombic crystal structure, with unique structural and morphological properties. CsPbBr3 MBE perovskite films, with thickness ranging from a few nm to 300 nm, were grown in ultra-high vacuum on a Si(111)7 × 7 reconstructed surface, and after the formation of about 2 nm of SiO2, obtained exposing the clean reconstructed Si surface to molecular oxygen that serves to decouple the film from substrate. X-ray diffraction, and electron microscopies, such as scanning electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements showed remarkable structural, as well as morphological features, indicating extremely high crystallinity over a large area and across the bulk of the perovskite film. Through the X-ray diffraction patterns we found very narrow (002) and (110) reflections of CsPbBr3 in pure orthorhombic phase, exhibiting a full width at half maximum of only 0.035°, value similar to a bulk Si single crystals, and a surface morphology composed of flat areas up to micrometres in lateral size. Our results shed new light both on preparation of high crystal quality perovskite films, and on the intrinsic properties of this striking fully-inorganic materials, which are exploitable for potential applications in electronic/optoelectronic devices and next generation photovoltaic solar cells.

Investigating Co and Fe Single-Atom (SA) Decorated NS-Doped Reduced Graphene Oxide (Co SA/NS-rGO, Fe SA/NS-rGO) Catalysts for NOx - to NH3 Pulsed Electroreduction

Electrochemical NH3 production has attracted much attention due to its potential to compensate for and supplement the Haber-Bosch process that produces hundreds of billions of kg of NH3 annually.1 One of the proposed electrochemical pathways to produce NH3 is the N2 reduction reaction. However, this reaction suffers from a high bond dissociation energy of 945 kJ mol−1, low NH3 Faradaic efficiency (F.E.) at high overpotentials, and NH3 quantification problems, limiting the extent of its applications.2,3 On the other hand, other N-containing species, NO3 - and NO2 -, that are commonly found in sewages and agricultural water, hold great potential for electrochemical NH3 production owing to their high NH3 yield rate and F.E. as well as building a self-sustaining NH3 production cycle working tandem with denitrification processes.1,4 In this study, we investigated Co and Fe single-atom (SA) decorated NS-doped reduced graphene oxide (Co SA/NS-rGO and Fe SA/NS-rGO) catalysts for nitrate reduction reaction (NO3RR) and nitrite reduction reaction (NO2RR). Both materials have defect-rich properties owing to preserving the nature of doped graphene materials even after the metal incorporation. The presence of the layered structure of graphene and homogenous distribution of Fe and Co SAs in the doped graphene basal plane is shown through High-Resolution Scanning Transmission Electron Microscopy (HR-STEM) measurements. In addition to the Co and Fe SAs on the NS-rGO planes, SEM and X-ray Photoelectron Spectroscopy (XPS) investigations demonstrated that CoS and FeS could be simultaneously formed.We performed NO3RR and NO2RR experiments in 0.1 M KOH + 0.1 M KNO3 and 0.1 M KOH + 0.1 M KNO2 electrolytes with constant Ar purging in a glass H-Cell with a Nafion proton exchange membrane. We obtained NH3 with 65% F.E. at -0.4 V and a maximum of 2 mol s-1 molM -1 yield rate using Co SA/NS-rGO catalyst while with 60% F.E. at -0.5 V and 2.3 mol s-1 molM -1 yield rate using Fe SA/NS-rGO catalyst for NO3RR. Furthermore, the ∼10% NO2 - F.E. that is obtained for NO3RR experiments at -0.3 V and a significant increase in NH3 F.E. after -0.3 V for NO2RR indicates that NO3 - to NO2 - reduction takes place at this potential and our catalysts follow a two-step electron transfer mechanism. Moreover, linear sweep voltammetry (LSV) measurements indicated an onset potential of -0.4 V and -0.5 V for Co SA/NS-rGO and Fe SA/NS-rGO, respectively, for the NO3RR which are in excellent agreement with NO3RR F.E. results. We demonstrate that after prereduction at high negative potentials and with optimizations in experimental conditions, one can obtain >80% NH3 F.E. for NO3RR.To further increase the NH3 yield, three different pulsed electroreduction studies such as applying a potential at (1) the open circuit potential (OCP), (2) NO2 - reduction potential, (3) Co2+ or Fe2+ red-ox potentials and NH3 reduction potentials for 1-5 s intervals were performed. On Co SA/NS-rGO, an increased NH3 F.E. of ∼100% at -0.4 V was obtained under pulsed conditions. Also, by modulating NO3 - to NO2 - conversion to more negative potentials by pulsed electroreduction, significantly higher NH3 F.E. values were obtained for both catalysts. The higher NH3 F.E. and lower overpotential of Co SA/NS-rGO compared to Fe SA/NS-rGO could be attributed to the CoS formation that is more stable than FeS.

Heteroepitaxial MOF-on-MOF Photocatalyst for Solar-Driven Water Splitting.

Assembly of different metal-organic frameworks (MOFs) into hybrid MOF-on-MOF heterostructures has been established as a promising approach to develop synergistic performances for a variety of applications. Here, we explore the performance of a MOF-on-MOF heterostructure by epitaxial growth of MIL-88B(Fe) onto UiO-66(Zr)-NH2 nanoparticles. The face-selective design and appropriate energy band structure alignment of the selected MOF constituents have permitted its application as an active heterogeneous photocatalyst for solar-driven water splitting. The composite achieves apparent quantum yields for photocatalytic overall water splitting at 400 and 450 nm of about 0.9%, values that compare much favorably with previous analogous reports. Understanding of this high activity has been gained by spectroscopic and electrochemical characterization together with scanning transmission and transmission electron microscopy (STEM, TEM) measurements. This study exemplifies the possibility of developing a MOF-on-MOF heterostructure that operates under a Z-scheme mechanism and exhibits outstanding activity toward photocatalytic water splitting under solar light.

Edge-Passivated Monolayer WSe2 Nanoribbon Transistors.

The ongoing reduction in transistor sizes drives advancements in information technology. However, as transistors shrink to the nanometer scale, surface and edge states begin to constrain their performance. 2Dsemiconductorsliketransition metal dichalcogenides (TMDs)have dangling-bond-free surfaces, hence achieving minimal surface states. Nonetheless, edge state disorder still limits the performance of width-scaled 2D transistors. This work demonstrates a facile edge passivation method to enhance the electrical properties of monolayer WSe2 nanoribbons, by combining scanning transmission electron microscopy, optical spectroscopy, and field-effect transistor (FET) transport measurements. Monolayer WSe2 nanoribbons are passivated with amorphous WOxSey at the edges, which is achievedusing nanolithography and a controlled remote O2 plasma process. The same nanoribbons, with and without edge passivation are sequentially fabricated and measured. The passivated-edge nanoribbon FETs exhibit 10 ± 6 times higher field-effect mobility than the open-edge nanoribbon FETs, which are characterized with dangling bonds at the edges. WOxSey edge passivation minimizes edge disorder and enhances the material quality of WSe2 nanoribbons. Owing to its simplicity and effectiveness, oxidation-based edge passivation could become a turnkey manufacturing solution for TMD nanoribbons in beyond-silicon electronics and optoelectronics.

The feasibility of an ultrathin dual-barrier scheme to inhibit interfacial diffusion and reactions in contact stacks of Co/NiSi/Si

Self-assembled monolayers (SAMs) and self-forming barriers (SFBs) are highly effective barriers of copper (Cu) interconnect systems. However, the barrier capability of SAMs and SFBs to contact metallization of cobalt (Co), a new important interconnect material, is yet to be explored. Here, contact layers of NiSi are grown by a two-step silicidation process on Si. Then, an all-wet SAM-seeding and electroless-plating process is used to coat (in sequence) an amine SAM and a MnO-added (only 0.1%) Co film onto NiSi/Si, using a specifically formulated N2H4-CoSO4-MnSO4 bath. The thermal stability of the Co(MnO)/SAM/NiSi/Si is evaluated, using (unalloyed) Co/SAM/NiSi/Si as a control. The 1.3 nm-thin SAM cannot protect the Co/SAM/NiSi/Si from catastrophic failure upon annealing, associated with serious Co/Si interfacial diffusion and the formation of faceted CoSi crystallites and a layered Co2Si/CoSi2 nanostructures at specific locations. By contrast, the Co(MnO)/SAM/NiSi/Si maintains an intact stack after annealing. Collaborative research results generated from (scanning) transmission electron microscopy, nanoscratch testing and surface-energy measurements suggest that the thermal stability enhancement of the whole Co(MnO)/SAM/NiSi/Si contact stack is related to the interfacial segregation of the added MnO as sub-5-nm dispersive crystalline particles, giving multiple functionalities as a SFB, Co-grain strengthening agent, and wetting/adhesion promoter.

Optical damage thresholds of single-mode fiber-tip spintronic terahertz emitters.

Spintronic terahertz emitters (STEs) are gapless, ultrabroadband terahertz sources that can be driven within a wide pump-wavelength and repetition-rate range. While STEs driven by strong pump lasers operating at kilohertz repetition rates excel in generating high electric field strengths for terahertz spectroscopy or ellipsometry, newly advancing technologies such as ultrafast modulation of terahertz polarization, scanning tunneling microscopy, laser terahertz emission nanoscopy, and fully fiber-coupled integrated systems demand an STE pumping at megahertz repetition rates. In all these applications the available terahertz power is ultimately limited by the STE's optical damage threshold. However, to date, only very few publications have targeted this crucial topic and investigations beyond the kilohertz repetition-rate regime are missing. Here, we present a complete study of our single-mode fiber-tip STEs' optical damage thresholds covering the kilohertz, megahertz, and gigahertz repetition-rate regimes as well as continuous-wave irradiation. As a very important finding, we introduce the necessity of classifying the optical damage threshold into two regimes: a low-repetition-rate regime characterized by a nearly constant fluence threshold, and a high-repetition-rate regime characterized by an antiproportional fluence dependence ("average-power threshold"). For our single-mode fiber-tip STEs, the transition between these regimes occurs around 4 MHz. Moreover, we present a cohesive theory of the damaging thermodynamical processes at play and identify temperature-driven inter-layer diffusion as the primary cause of the STE failure. These findings are substantiated by atomic force microscopy, infrared scattering-type scanning near-field optical microscopy, and scanning transmission electron microscopy measurements. This new level of understanding offers a clear optimization lever and provides valuable support for future advancements in the promising field of spintronic terahertz emission.

Evidence for multiferroicity in single-layer CuCrSe2

Multiferroic materials, which simultaneously exhibit ferroelectricity and magnetism, have attracted substantial attention due to their fascinating physical properties and potential technological applications. With the trends towards device miniaturization, there is an increasing demand for the persistence of multiferroicity in single-layer materials at elevated temperatures. Here, we report high-temperature multiferroicity in single-layer CuCrSe2, which hosts room-temperature ferroelectricity and 120 K ferromagnetism. Notably, the ferromagnetic coupling in single-layer CuCrSe2 is enhanced by the ferroelectricity-induced orbital shift of Cr atoms, which is distinct from both types I and II multiferroicity. These findings are supported by a combination of second-harmonic generation, piezo-response force microscopy, scanning transmission electron microscopy, magnetic, and Hall measurements. Our research provides not only an exemplary platform for delving into intrinsic magnetoelectric interactions at the single-layer limit but also sheds light on potential development of electronic and spintronic devices utilizing two-dimensional multiferroics.

Chiral Stacking Identification of Two-Dimensional Triclinic Crystals Enabled by Machine Learning.

Chiral materials possess broken inversion and mirror symmetry and show great potential in the application of next-generation optic, electronic, and spintronic devices. Two-dimensional (2D) chiral crystals have planar chirality, which is nonsuperimposable on their 2D enantiomers by any rotation about the axis perpendicular to the substrate. The degree of freedom to construct vertical stacking of 2D monolayer enantiomers offers the possibility of chiral manipulation for designed properties by creating multilayers with either a racemic or enantiomerically pure stacking order. However, the rapid recognition of the relative proportion of two enantiomers becomes demanding due to the complexity of stacking orders of 2D chiral crystals. Here, we report the unambiguous identification of racemic and enantiomerically pure stackings for layered ReSe2 and ReS2 using circular polarized Raman spectroscopy. The chiral Raman response is successfully manipulated by the enantiomer proportion, and the stacking orders of multilayer ReSe2 and ReS2 can be completely clarified with the help of second harmonic generation and scanning transmission electron microscopy measurements. Finally, we trained an artificial intelligent Spectra Classification Assistant to predict the chirality and the complete crystallographic structures of multilayer ReSe2 from a single circular polarized Raman spectrum with the accuracy reaching 0.9417 ± 0.0059.

Giant polarization in tetragonal-like BiFeO3 film via (Ba,Ca)TiO3 doping

BiFeO3 is a multiferroic material, its tetragonality (T) phase usually exhibits large tetragonality (c/a ratio) and strong ferroelectricity. Unlike the commonly used method of strain engineering via substrate, here we present a general and practical approach for obtaining T-like phase BiFeO3 films through (Ba,Ca)TiO3 doping (BF-BCT). The BF-BCT film coherently grows on the La0.7Sr0.3MnO3/(La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrate even at 180 nm thick, implying a very large critical thickness, and shows a large tetragonality of 1.12. Impressively, the films exhibit a giant remanent polarization (2Pr) of 320 μC/cm2, which is higher than the corresponding values of any other lead-free ferroelectric films reported to date. Cross-sectional scanning transmission electron microscopy measurements confirm the presence of the T-like phase in BF-BCT films, where the giant polarization might be attributed to the off-center B-site atom. The BF-BCT films are structurally homogeneous without any precipitation of the second phase. The giant polarization observed in the BF-BCT films indicate their great potential for application in next-generation storage and information devices.

Controlled growth of 3R phase niobium diselenide and its properties

Inversion symmetry broken 3R phase transition metal dichalcogenides (TMDs) show fascinating prospects in spintronics, valleytronics, and nonlinear optics. However, the controlled synthesis of 3R phase TMDs is still a great challenge. In this work, two-dimensional 3R-NbSe2 single crystals up to 0.2 mm were synthesized for the first time through chemical vapor deposition method by designing a space-confined system. The crystal size and morphology can be controlled by the location of the stacked substrates and the amount of the Nb2O5 precursor. Scanning transmission electron microscopy and Raman measurements reveal the NbSe2 exhibits a pure 3R stacking mode with relatively weak interlayer van der Waals interactions. Importantly, 3R-NbSe2 shows obvious second harmonic generation signal which intensity intensified as thickness increases. Density functional theory calculations and optical absorption demonstrate the coexistence of metallic and semiconducting optical properties of 3R-NbSe2. We designed a NbSe2/WS2/NbSe2 photodetector utilizing the metallicity of 3R-NbSe2, which shows good performance especially an ultrafast response (6–7 μs, 0.5 ms − 7.9 s for Au electrodes in literature). The proposed strategy and findings are of great significance for the growth of many other 3R-TMDs and applications of nonlinear optical and ultrafast devices.

Three dimensional classification of dislocations from single projections

Many material properties are governed by dislocations and their interactions. The reconstruction of the three-dimensional structure of a dislocation network so far is mainly achieved by tomographic tilt series with high angular ranges, which is experimentally challenging and additionally puts constraints on possible specimen geometries. Here, we show a way to reveal the three dimensional location of dislocations and simultaneously classify their type from single 4D scanning transmission electron microscopy measurements. The dislocation’s strain field causes inter-band scattering between the electron’s Bloch waves within the crystal. This scattering in turn results in characteristic interference patterns with sufficient information to identify the dislocations type and depth in beam direction by comparison with multi-beam calculations. We expect the presented measurement principle will lead to fully automated methods for reconstruction of the three dimensional strain fields from such measurements with a wide range of applications in material and physical sciences and engineering.

Development of CuO/Cu4(OH)6SO4 Nanoparticle Mixtures to Optimize the H2S Adsorption.

In this paper, we report the H2S adsorption behavior of a sorbent composed of mixtures of tenorite (CuO) and brochantite [Cu4(OH)6SO4]. These materials are readily prepared through the addition of NaOH(aq) to CuSO4(aq). They can be loaded onto polymer foams to create effective filters that can remove malodorous H2S gas, as evidenced by breakthrough tests. X-ray diffraction shows that the ratio of the two compounds in the mixture can be finely tuned by varying the amount of NaOH(aq) that is added to the reaction mixture. X-ray photoelectron spectroscopy shows that brochantite, like tenorite, has the ability to chemically adsorb H2S. Correlation of the H2S breakthrough data with scanning transmission electron microscopy measurements shows that the most effective sorbents contain nanoscale needle-like particles. These are likely to be formed largely by the tenorite phase. The samples with the greatest H2S adsorption efficacy contained less than 20% tenorite in the mixture, where these particles had the greatest abundance. The application of this sorbent onto porous substrates to create effective filters, along with the synthetic ease of its production, could allow this methodology to find use in a number of areas where H2S poses a problem. This could include areas where protective clothing is required to adsorb the gas from environments where there is a high level of H2S, for example, in wastewater treatment plants, oil and gas wells, or in the medical sector, where it could be deployed as filter media.

Denary High-Entropy Oxide Nanoparticles Synthesized by a Continuous Supercritical Hydrothermal Flow Process.

High-entropy oxide nanoparticles (HEO NPs) have been intensively studied because of their attractive properties, such as high stability and enhanced catalytic activity. In this work, for the first time, denary HEO NPs were successfully synthesized using a continuous supercritical hydrothermal flow process without calcination. Interestingly, this process allows the formation of HEO NPs on the order of seconds at a relatively lower temperature. The synthesized HEO NPs contained 10 metal elements, La, Ca, Sr, Ba, Fe, Mn, Co, Ru, Pd, and Ir, and had a perovskite-type structure. Atomic-resolution high-angle annular dark-field scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy measurements revealed homogeneous dispersion of the 10 metal elements. The obtained HEO NPs also exhibited a higher catalytic activity for the CO oxidation reaction than that of the LaFeO3 NPs.

Ruthenium,nitrogen-codoped carbon aerogels for real-time electrochemical monitoring of cellular hydrogen peroxide release

Hydrogen peroxide (H2O2) is an important signaling molecule for diverse biological functions, and it is thus of importance to develop sensing platforms for real-time monitoring of cellular release of H2O2. Herein, a H2O2 electrochemical sensor is constructed based on ruthenium,nitrogen-codoped carbon aerogels. The nanocomposites are prepared by controlled pyrolysis of a biomass hydrogel with RuCl3, where RuNx single-atom sites and Ru nanoclusters are incorporated into the aerogel scaffold, as confirmed by high-angle annular dark-field scanning transmission electron microscopy and X-ray photoelectron spectroscopy measurements. In cyclic voltammetry and amperometric analysis, the aerogels exhibit a remarkable H2O2 detection performance, with excellent sensitivity and selectivity, wide linear range (0.1 μΜ ∼ 1 mM) and low detection limit (0.01 μM). The sensor can also be used for real-time monitoring of hydrogen peroxide released from MCF-7 cells and screening of anticancer drugs, displaying a high potential for biosensing and biomedical diagnostics.

Self-assembled photonic cavities with atomic-scale confinement

Despite tremendous progress in research on self-assembled nanotechnological building blocks, such as macromolecules1, nanowires2 and two-dimensional materials3, synthetic self-assembly methods that bridge the nanoscopic to macroscopic dimensions remain unscalable and inferior to biological self-assembly. By contrast, planar semiconductor technology has had an immense technological impact, owing to its inherent scalability, yet it seems unable to reach the atomic dimensions enabled by self-assembly. Here, we use surface forces, including Casimir–van der Waals interactions4, to deterministically self-assemble and self-align suspended silicon nanostructures with void features well below the length scales possible with conventional lithography and etching5, despite using only conventional lithography and etching. The method is remarkably robust and the threshold for self-assembly depends monotonically on all the governing parameters across thousands of measured devices. We illustrate the potential of these concepts by fabricating nanostructures that are impossible to make with any other known method: waveguide-coupled high-Q silicon photonic cavities6,7 that confine telecom photons to 2 nm air gaps with an aspect ratio of 100, corresponding to mode volumes more than 100 times below the diffraction limit. Scanning transmission electron microscopy measurements confirm the ability to build devices with sub-nanometre dimensions. Our work constitutes the first steps towards a new generation of fabrication technology that combines the atomic dimensions enabled by self-assembly with the scalability of planar semiconductors.

The density and pressure of helium nano-bubbles encapsulated in silicon

The 1 s 2 → 1 s 2 p ( 1 P ) excitation in compressed helium atoms in either the bulk material or encapsulated in a bubble is shifted to energies higher than in the free atom. For bulk helium, energy shifts predicted from non-empirical electronic structure computations are in excellent agreement with experimentally determined values. However, there are significant discrepancies both between the results of experiments on different bubbles and between these and the well established descriptions of the bulk. A critique is presented of previous analyses of earlier scanning transmission electron microscope measurements that are untrustworthy because the density dependence of the electron impact excitation cross section was neglected. Experimental electron energy loss data from an earlier study of helium encapsulated in silicon are reanalysed and it is shown that the properties of the helium in these bubbles do not differ significantly from those in the bulk, thereby enabling the densities in the bubbles to be determined. These enable bubble pressures to be deduced from a well established experimentally derived equation of state. It is shown that the errors of up to 80% in the incorrectly determined densities are greatly magnified in the predicted pressures which can be too large by factors of over seven.

Determining the Projected Crystal Structure from Four-dimensional Scanning Transmission Electron Microscopy via the Scattering Matrix.

We present a gradient-descent-based approach to determining the projected electrostatic potential from four-dimensional scanning transmission electron microscopy measurements of a periodic, crystalline material even when dynamical scattering occurs. The method solves for the scattering matrix as an intermediate step, but overcomes the so-called truncation problem that limited previous scattering-matrix-based projected structure determination methods. Gradient descent is made efficient by using analytic expressions for the gradients. Through simulated case studies, we show that iteratively improving the scattering matrix determination can significantly improve the accuracy of the projected structure determination.

Self-catalyzed GaP nanowire MOVPE growth on Si

Typically, vapour liquid solid (VLS)-grown nanowires via metal–organic vapour phase epitaxy (MOVPE) use gold as a liquid growth catalyst. However, incorporating gold as an impurity during growth is disadvantageous. Therefore, we introduce the self-catalyzed VLS growth of GaP nanowires on Si (111) substrates via MOVPE, utilizing (deposited) Ga droplets as seed particles. To understand and optimize the growth process, the influence of various growth parameters such as Ga precursor preflow, growth temperature, growth time and V/III ratio are studied. As main findings we show that nanowire growth without strong tapering is possible. By varying the V/III gas phase ratio the tapering of nanowires can be manipulated during growth via droplet consumption. In addition, nanowires with lengths up to 10 µm and an aspect ratio of around 20 are demonstrated, showing only slight tapering. High-resolution scanning transmission electron microscopy measurements prove the zincblende crystal structure of the GaP nanowires in horizontal and vertical ultramicrotomy cuts. In vertical cross sections, a high number of microtwin boundaries perpendicular to the growth direction are found.