Self-catalyzed GaP nanowire MOVPE growth on Si

Abstract

Typically, vapour liquid solid (VLS)-grown nanowires via metal–organic vapour phase epitaxy (MOVPE) use gold as a liquid growth catalyst. However, incorporating gold as an impurity during growth is disadvantageous. Therefore, we introduce the self-catalyzed VLS growth of GaP nanowires on Si (111) substrates via MOVPE, utilizing (deposited) Ga droplets as seed particles. To understand and optimize the growth process, the influence of various growth parameters such as Ga precursor preflow, growth temperature, growth time and V/III ratio are studied. As main findings we show that nanowire growth without strong tapering is possible. By varying the V/III gas phase ratio the tapering of nanowires can be manipulated during growth via droplet consumption. In addition, nanowires with lengths up to 10 µm and an aspect ratio of around 20 are demonstrated, showing only slight tapering. High-resolution scanning transmission electron microscopy measurements prove the zincblende crystal structure of the GaP nanowires in horizontal and vertical ultramicrotomy cuts. In vertical cross sections, a high number of microtwin boundaries perpendicular to the growth direction are found.