Scanning Gate Research Articles

Scanning gate imaging in confined geometries

This article reports on tunable electron backscattering investigated with the biased tip of a scanning force microscope. Using a channel defined by a pair of Schottky gates, the branched electron flow of ballistic electrons injected from a quantum point contact is guided by potentials of a tunable height well below the Fermi energy. The transition from injection into an open two-dimensional electron gas to a strongly confined channel exhibits three experimentally distinct regimes: one in which branches spread unrestrictedly, one in which branches are confined but the background conductance is affected very little, and one where the branches have disappeared and the conductance is strongly modified. Classical trajectory-based simulations explain these regimes at the microscopic level. These experiments allow us to understand under which conditions branches observed in scanning gate experiments do or do not reflect the flow of electrons.

Coherent beam combining in atmospheric channels using gated backscatter.

This paper introduces the concept of atmospheric channels and describes a possible approach for the coherent beam combining of lasers of an optical phased array (OPA) in a turbulent atmosphere. By using the recently introduced sparse spectrum harmonic augmentation method, a comprehensive simulative investigation was performed and the exceptional properties of the atmospheric channels were numerically demonstrated. Among the interesting properties are the ability to guide light in a confined manner in a refractive channel, the ability to gather different sources to the same channel, and the ability to maintain a constant relative phase within the channel between several sources. The newly introduced guiding properties combined with a suggested method for channel probing and phase measurement by aerosol backscattered radiation allows coherence improvement of the phased array's elements and energy refocusing at the location of the channel in order to increase power in the bucket without feedback from the target. The method relies on the electronic focusing, electronic scanning, and time gating of the OPA, combined with elements of the relative phase measurements.

Probing weak localization in chemical vapor deposition graphene wide constriction using scanning gate microscopy

Low-temperature scanning gate microscopy (LT-SGM) studies of graphene allow one to obtain important spatial information regarding coherent transport such as weak localization (WL) and universal conductance fluctuations. Although fascinating LT-SGM results on pristine graphene prepared by mechanical exfoliation have been reported in the literature, there appears to be a dearth of LT-SGM results on chemical vapor deposition (CVD)-grown graphene whose large scale and flexible substrate transferability make it an ideal candidate for coherent electronic applications. To this end, we have performed LT-SGM studies on CVD-grown graphene wide constriction (0.8 μm), which can be readily prepared by cost-effective optical lithography fully compatible with those in wafer foundry, in the WL regime. We find that the movable local gate can sensitively modulate the total conductance of the CVD graphene constriction possibly due to the intrinsic grain boundaries and merged domains, a great advantage for applications in coherent electronics. Moreover, such a conductance modulation by LT-SGM provides an additional, approximately magnetic-field-independent probe for studying coherent transport such as WL in graphene and spatial conductance variation.

Imaging ballistic carrier trajectories in graphene using scanning gate microscopy

We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.

Mode Specific Backscattering in a Quantum Point Contact.

We demonstrate a scanning gate grid measurement technique consisting in measuring the conductance of a quantum point contact (QPC) as a function of gate voltage at each tip position. Unlike conventional scanning gate experiments, it allows investigating QPC conductance plateaus affected by the tip at these positions. We compensate the capacitive coupling of the tip to the QPC and discover that interference fringes coexist with distorted QPC plateaus. We spatially resolve the mode structure for each plateau.

Direct imaging of coherent quantum transport in graphenep−n−pjunctions

We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning gate images. In addition to halos over the bulk we also observe ones spatially registered to the physical edge of the graphene. Guided by quantum transport simulations we attribute these to modified resonant scattering at the edges within elongated cavities that form due to focusing of the electrostatic field.

Scattering approach to scanning gate microscopy

We present a perturbative approach to the conductance change caused by a weakly invasive scattering potential in a two-dimensional electron gas. The resulting expressions are used to investigate the relationship between the conductance change measured in scanning gate microscopy as a function of the position of a scattering tip and local electronic quantities like the current density. We use a semiclassical approach to treat the case of a strong hard-wall scatterer in a half-plane facing a reflectionless channel. The resulting conductance change is consistent with the numerically calculated quantum conductance.

Magnetic scanning gate microscopy of a domain wall nanosensor using microparticle probe

We apply the magnetic scanning gate microscopy (SGM) technique to study the interaction between a magnetic bead (MB) and a domain wall (DW) trapped in an L-shaped magnetic nanostructure. Magnetic SGM is performed using a custom-made probe, comprising a hard magnetic NdFeB bead of diameter 1.6µm attached to a standard silicon tip. The MB–DW interaction is detected by measuring changes in the electrical resistance of the device as a function of the tip position. By scanning at different heights, we create a 3D map of the MB–DW interaction and extract the sensing volume for different widths of the nanostructure's arms. It is shown that for 50nm wide devices the sensing volume is a cone of 880nm in diameter by 1.4µm in height, and reduces down to 800nm in height for 100nm devices with almost no change in its diameter.

Self-sensing cantilevers with integrated conductive coaxial tips for high-resolution electrical scanning probe metrology

The lateral resolution of many electrical scanning probe techniques is limited by the spatial extent of the electrostatic potential profiles produced by their probes. Conventional unshielded conductive atomic force microscopy probes produce broad potential profiles. Shielded probes could offer higher resolution and easier data interpretation in the study of nanostructures. Electrical scanning probe techniques require a method of locating structures of interest, often by mapping surface topography. As the samples studied with these techniques are often photosensitive, the typical laser measurement of cantilever deflection can excite the sample, causing undesirable changes electrical properties. In this work, we present the design, fabrication, and characterization of probes that integrate coaxial tips for spatially sharp potential profiles with piezoresistors for self-contained, electrical displacement sensing. With the apex 100 nm above the sample surface, the electrostatic potential profile produced by our coaxial tips is more than 2 times narrower than that of unshielded tips with no long tails. In a scan bandwidth of 1 Hz–10 kHz, our probes have a displacement resolution of 2.9 Å at 293 K and 79 Å at 2 K, where the low-temperature performance is limited by amplifier noise. We show scanning gate microscopy images of a quantum point contact obtained with our probes, highlighting the improvement to lateral resolution resulting from the coaxial tip.

Electrostatic Limit of Detection of Nanowire-Based Sensors.

Scanning gate microscopy is used to determine the electrostatic limit of detection (LOD) of a nanowire (NW) based chemical sensor with a precision of sub-elementary charge. The presented method is validated with an electrostatically formed NW whose active area and shape are tunable by biasing a multiple gate field-effect transistor (FET). By using the tip of an atomic force microscope (AFM) as a local top gate, the field effect of adsorbed molecules is emulated. The tip induced charge is quantified with an analytical electrostatic model and it is shown that the NW sensor is sensitive to about an elementary charge and that the measurements with the AFM tip are in agreement with sensing of ethanol vapor. This method is applicable to any FET-based chemical and biological sensor, provides a means to predict the absolute sensor performance limit, and suggests a standardized way to compare LODs and sensitivities of various sensors.

Conductance response of graphene nanoribbons and quantum point contacts in scanning gate measurements

We provide a theoretical study of the conductance response of systems based on graphene nanoribbons to the potential of a scanning probe. The study is based on the Landauer approach for the tight-binding Hamiltonian with an implementation of the quantum transmitting boundary method and covers homogenous nanoribbons, their asymmetric narrowing and quantum point contacts (QPCs) of various profiles. The response maps at low Fermi energies resolve formation of n–p junctions induced by the probe potential and a presence of zigzag-armchair segments of the edges for inhomogeneous ribbons. For an asymmetric narrowing of the nanoribbons the scanning probe resolves formation of standing waves related to backscattering within the highest subband of the narrower part of the system. The QPCs contain a long constriction support formation of localized resonances. These resonances result in a series of conductance peaks that are reentrant in the Fermi energy, and the form of the probability density can be resolved by conductance mapping. For shorter constrictions the probe induces smooth conductance minima within the constrictions. In general, besides the low-energy transport gap, in the wider parts of the ribbon the variation of the conductance is low compared to the narrower part.

Electron paths and double-slit interference in the scanning gate microscopy

We analyze electron paths in a solid-state double-slit interferometer based on two-dimensional electron gas and mapping by scanning gate microscopy (SGM). A device with a quantum point source contact of a split exit and a drain contact for electron detection is considered. We study the SGM maps of source-drain conductance (G) as functions of the probe position, and we find that for a narrow drain, the classical electron paths are clearly resolved without any trace of double-slit interference. The latter is only present in the SGM maps of backscattering (R) probability. Double-slit interference is found in the G maps for a wider drain contact, but at the expense of a loss of information on the electron trajectories. We discuss the interplay of Young's interference and interference effects between various electron paths introduced by the tip and the electron detector. The stability of the G and R maps versus the geometry parameters of the scattering device is also discussed.

Multitip scanning gate microscopy for ballistic transport studies in systems with a two-dimensional electron gas

We consider conductance mapping of systems based on the two-dimensional electron gas with scanning gate microscopy using two and more tips of the atomic force microscope. The paper contains results of numerical simulations for a model tip potential with a proposal of a few procedures for extraction and manipulation the ballistic transport properties. In particular, we demonstrate that the multi-tip techniques can be used for readout of the Fermi wavelength, detection of potential defects, filtering specific transverse modes, tuning the system into resonant conditions under which a stable map of a local density of states can be extracted from conductance maps using a third tip.

Improved respiratory navigator gating for thoracic 4D flow MRI

BackgroundThoracic and abdominal 4D flow MRI is typically acquired in combination with navigator respiration control which can result in highly variable scan efficiency (Seff) and thus total scan time due to inter-individual variability in breathing patterns. The aim of this study was to test the feasibility of an improved respiratory control strategy based on diaphragm navigator gating with fixed Seff, respiratory driven phase encoding, and a navigator training phase. Methods4D flow MRI of the thoracic aorta was performed in 10 healthy subjects at 1.5T and 3T systems for the in-vivo assessment of aortic time-resolved 3D blood flow velocities. For each subject, four 4D flow scans (1: conventional navigator gating, 2–4: new implementation with fixed Seff =60%, 80% and 100%) were acquired. Data analysis included semi-quantitative evaluation of image quality of the 4D flow magnitude images (image quality grading on a four point scale), 3D segmentation of the thoracic aorta, and voxel-by-voxel comparisons of systolic 3D flow velocity vector fields between scans. ResultsConventional navigator gating resulted in variable Seff=74±13% (range=56%–100%) due to inter-individual variability of respiration patterns. For scans 2–4, the new navigator implementation was able to achieve predictable total scan times with stable Seff, only depending on heart rate. Semi- and fully quantitative analysis of image quality in 4D flow magnitude images was similar for the new navigator scheme compared to conventional navigator gating. For aortic systolic 3D velocities, good agreement was found between all new navigator settings (scan 2–4) with the conventional navigator gating (scan 1) with best performance for Seff=80% (mean difference=−0.01 m/s; limits of agreement=0.23 m/s, Pearson's ρ=0.89, p<0.001). No significant differences for image quality or 3D systolic velocities were found for 1.5T compared to 3T. ConclusionsThe findings of this study demonstrate the feasibility of the new navigator scheme to acquire 4D flow data with more predictable scan time while maintaining image quality and 3D velocity information, which may prove beneficial for clinical applications.

Fast and reliable method of conductive carbon nanotube-probe fabrication for scanning probe microscopy.

We demonstrate the procedure of scanning probe microscopy (SPM) conductive probe fabrication with a single multi-walled carbon nanotube (MWNT) on a silicon cantilever pyramid. The nanotube bundle reliably attached to the metal-covered pyramid is formed using dielectrophoresis technique from the MWNT suspension. It is shown that the dimpled aluminum sample can be used both for shortening/modification of the nanotube bundle by applying pulse voltage between the probe and the sample and for controlling the probe shape via atomic force microscopy imaging the sample. Carbon nanotube attached to cantilever covered with noble metal is suitable for SPM imaging in such modulation regimes as capacitance contrast microscopy, Kelvin probe microscopy, and scanning gate microscopy. The majority of such probes are conductive with conductivity not degrading within hours of SPM imaging.

Correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs wires measured with scanning gate microscopy

We investigate the correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and “crystal lattice mismatch” defect were observed. These observations demonstrate the crucial role of Coulomb interaction in formation of charge density waves in InAs nanowires.

A Novel Scan Architecture for Low Power Scan-Based Testing

Test power has been turned to a bottleneck for test considerations as the excessive power dissipation has serious negative effects on chip reliability. In scan-based designs, rippling transitions caused by test patterns shifting along the scan chain not only elevate power consumption but also introduce spurious switching activities in the combinational logic. In this paper, we propose a novel area-efficient gating scan architecture that offers an integrated solution for reducing total average power in both scan cells and combinational part during shift mode. In the proposed gating scan structure, conventional master/slave scan flip-flop has been modified into a new gating scan cell augmented with state preserving and gating logic that enables average power reduction in combinational logic during shift mode. The new gating scan cells also mitigate the number of transitions during shift and capture cycles. Thus, it contributes to average power reduction inside the scan cell during scan shifting with low impact on peak power during capture cycle. Simulation results have shown that the proposed gating scan cell saves 28.17% total average power compared to conventional scan cell that has no gating logic and up to 44.79% compared to one of the most common existing gating architectures.

Local Electrical Investigations of Nitric Acid Treatment Effects on Carbon Nanotube Networks

Nitric acid is a commonly used chemical in preparing and functionalizing carbon nanotube (CNT) networks. It is also used to enhance the conductivity of CNT-based networks or films, which is usually attributed to p-type doping by NO3– ions. We used local electrical characterization methods based on atomic force microscopy to elucidate the effects of nitric acid treatments on sparse and random CNT networks. IV characteristics of CNT network devices before and after nitric acid treatments are obtained along with local electrical characteristics with both scanning gate microscopy and electrostatic force microscopy. Our results show both p-type doping of CNTs and reduction of CNT–CNT junction resistances after nitric acid treatments.

Scanning-gate-induced effects and spatial mapping of a cavity

Tailored electrostatic potentials are at the heart of semiconductor nanostructures. We present measurements of size and screening effects of the tip-induced potential in scanning gate microscopy on a two-dimensional electron gas. First, we show methods on how to estimate the size of the tip-induced potential. Second, a ballistic cavity is studied as a function of the bias-voltage of the metallic top gates and probed with the tip-induced potential. It is shown how the potential of the cavity changes by tuning the system to a regime where conductance quantization in the constrictions formed by the tip and the top gates occurs. This conductance quantization leads to a unprecedented rich fringe pattern over the entire structure. Third, the effect of electrostatic screening of the metallic top gates is discussed.

Scanning gate microscopy of quantum contacts under parallel magnetic field: Beating patterns between spin-split transmission peaks or channel openings

We study the conductance $g$ of an electron interferometer created in a two dimensional electron gas between a nanostructured contact and the depletion region induced by the charged tip of a scanning gate microscope. Using non-interacting models, we study the beating pattern of interference fringes exhibited by the images giving $g$ as a function of the tip position when a parallel magnetic field is applied. The analytical solution of a simplified model allows us to distinguish between two cases: (i) If the field is applied everywhere, the beating of Fabry-P\'erot oscillations of opposite spins gives rise to interference rings which can be observed at low temperatures when the contact is open between spin-split transmission resonances. (ii) If the field acts only upon the contact, the interference rings cannot be observed at low temperatures, but only at temperatures of the order of the Zeeman energy. For a contact made of two sites in series, a model often used for describing an inversion-symmetric double-dot setup, a pseudo-spin degeneracy is broken by the inter-dot coupling and a similar beating effect can be observed without magnetic field at temperatures of the order of the interdot coupling. Eventually, numerical studies of a quantum point contact with quantized conductance plateaus confirm that a parallel magnetic field applied everywhere or only upon the contact gives rises to similar beating effects between spin-split channel openings.