Sb2O3 Thin Films Research Articles

Effect of fluorine doping on the structural, optical, and electrical properties of spray deposited Sb2O3 thin films

In this article, novel samples of un-doped and fluorine-doped Sb2O3 (FAO) thin films have been synthesized utilizing the spray pyrolysis procedure. X-ray diffraction instrument has been used to examine the crystallinity nature of undoped-Sb2O3 and F-doped Sb2O3 films. It depicts that these novel films have the polycrystalline orthorhombic phase. The investigation of microstructural parameters of sprayed undoped and fluorine-doped Sb2O3 films reveals that as the F-concentration increases, the crystallite size, D, decreases from 48.46 nm to 31.91 nm, while the microstrain (εs) and number of crystallites per unit surface area (NC) increase. The optical results reveal that increasing the F-doping concentration from 0.0 wt% to 7.5 wt%. reduces the optical band-gap energy values (Eg) of the spray-deposited FAO films from 3.622 to 3.42 eV, while Urbach energy values (Eu) increases from 0.214 eV to 0.272 eV. Optical and electrical conductivities FAO films are also enhanced by increasing the F-doping concentration. Nonlinear optical parameters of these films are also got better by increasing the F-content from 0.0 wt% to 7.5 wt%. Meanwhile, the sheet resistance of FAO films decreases as the F-content increases, and Figure of merit of these films also improves. The present findings indicate that these innovative transparent conducting F-doped Sb2O3 films can be used in many optoelectronic and photovoltaic applications.

Synthesis and Characterization of F Doped Sb2o3 Thin Films as New Transparent Conductive Oxide Layers for Optoelectronic Applications

Synthesis and Characterization of F Doped Sb2o3 Thin Films as New Transparent Conductive Oxide Layers for Optoelectronic Applications

Band alignment of Sb2O3 and Sb2Se3

Antimony selenide (Sb2Se3) possesses great potential in the field of photovoltaics (PV) due to its suitable properties for use as a solar absorber and good prospects for scalability. Previous studies have reported the growth of a native antimony oxide (Sb2O3) layer at the surface of Sb2Se3 thin films during deposition and exposure to air, which can affect the contact between Sb2Se3 and subsequent layers. In this study, photoemission techniques were utilized on both Sb2Se3 bulk crystals and thin films to investigate the band alignment between Sb2Se3 and the Sb2O3 layer. By subtracting the valence band spectrum of an in situ cleaved Sb2Se3 bulk crystal from that of the atmospherically contaminated bulk crystal, a valence band offset (VBO) of −1.72 eV is measured between Sb2Se3 and Sb2O3. This result is supported by a −1.90 eV VBO measured between Sb2O3 and Sb2Se3 thin films via the Kraut method. Both results indicate a straddling alignment that would oppose carrier extraction through the back contact of superstrate PV devices. This work yields greater insight into the band alignment of Sb2O3 at the surface of Sb2Se3 films, which is crucial for improving the performance of these PV devices.

Engineering of physical properties of spray-deposited nanocrystalline Sb2O3 thin films by phase transformation

Nanostructured Sb2O3 thin films have been deposited onto glass substrates by using the chemical spray pyrolysis technique, and the effect of precursor solution volume on the physical properties was investigated for the first time. The prepared films were characterized in detail by using x-ray diffraction, field-emission scanning electron microscopy with energy dispersive x-ray analysis (FESEM-EDAX), UV-vis absorption and transmission spectroscopy, Raman spectroscopy analysis and electrical resistivity measurement. X-ray diffraction analysis shows that the senarmontite cubic phase is completely transferred to the valentinite orthorhombic phase as the precursor solution volume is increased. This phase transformation as a function of precursor volume is discussed in detail. The FESEM-EDAX analysis reconfirms the phase change showing well-defined nano-dimensional cubic hexagonal and orthorhombic octahedral morphologies with excellent stoichiometry. The optical property studies show that the bandgap energy of Sb2O3 varies from 3.43–3.98 eV as a function of precursor quantity. The as-grown Sb2O3 thin films are semiconducting in nature. The measured values of electrical resistivity and activation energy are found to be dependent on the spray solution volume. The electrical resistivity of deposited Sb2O3 thin films shows variation from 26.15 × 102–34.27 × 102 Ω cm and the activation energy of the films is in the order of 0.763–0.773 eV.

Growth of hexagonal shape nanostructured Sb2O3 thin films by spray pyrolysis and their structural, morphological, electrical and optical properties

In recent past decades, various oxide’s thin films were synthesized successfully by chemical spray pyrolysis technique (CSPT), but little work has been dedicated to the synthesis of Sb2O3 thin films. In this investigation, we report the synthesis of nanostructured antimony trioxide (Sb2O3) thin films using the simple and low-cost CSPT. The deposited films were characterized in detailed by means of x-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and energy dispersive x-ray analysis (EDAX), UV–Visible absorption and transmission spectroscopy, Raman spectroscopy. The electrical resistivity was measured using two-point probe method. The XRD analysis shows that the deposited films possess good crystalline nature, senarmonite cubic phase, with average crystallites size of 58.73 nm. FESEM–EDAX analysis revealed that nano-dimensional hexagonal cubic crystal morphology grown-up on the surface with excellent elemental composition of Sb2O3. The deposited Sb2O3 films exhibit semiconducting behaviour, with the calculated band gap, activation energy and resistivity were found to be the order of 3.43 eV, 0.764 eV and 26.16 × 102 Ω cm respectively. Raman spectra analysis verifies the homogeneity of the deposited material.

Ag nanoparticle decorated Sb2O3 thin film: synthesis, characterizations and application

The property modifications in a thin film when its surface undergoes a nanoparticle decoration process in addition to its surface nanostructuring are investigated this paper. In specific, it describes the property modifications of antimony trioxide and its annealed variant, when their surface is decorated with Ag nanoparticles. Along with the modifications brought to the thin films, the morphology variations or agglomeration effects happening to Ag nanoparticles through/after this decoration process is also discussed here. We observe a mutual tuning of morphology as well as properties of thin film and nanoparticles. A fractal like cluster formation of Ag nanoparticle on the surface of nanostructured Sb2O3 thin film was witnessed. Whereas on the surfaces of Sb2O3 (annealed) thin film and glass plate, clustering of Ag nanoparticle is found to be different. On annealed Sb2O3 thin film surface, instead of forming fractal clusters most of the Ag nanoparticles fill in the voids between the thorns like structure of the film. The surface modification highly influences the optical absorption as well as the hydrophilicity of antimony trioxide samples. Due to the introduction of Ag nanoparticle, the absorption of Sb2O3 thin film in the visible region increased. All the synthesized films have roughness coefficient >1 and all are hydrophilic in nature. Nano structured Sb2O3 thin film is extremely hydrophilic and they become hydrophilic due to the introduction of Ag nanoparticle. The filling of Ag nanoparticles in the voids between the thorn structures might have prevented the water droplet penetration into these voids. Consequently, a partial wetting occurs on the film surface. High SERS efficiency factor (EF) and good reproducibility of Ag/Sb2O3/Glass make it a good candidate for SERS application.

Synthesis and characterization of hexagonal and tetrahedral nanocrystalline Sb2O3 thin films prepared by chemical spray pyrolysis technique

Abstract Nanocrystalline hexagonal and tetrahedral shape Sb2O3 thin films of different concentrations have been successfully deposited onto glass substrates using chemical spray pyrolysis technique for the first time. The structural, morphological and compositional studies were carried out using X-ray diffractometer (XRD), field emission scanning electron microscope (FESEM) and energy dispersive X-ray analysis (EDAX) respectively. The structural studies revealed that, deposited Sb2O3 thin films have polycrystalline nature having cubic senarmontite structure. The morphological and compositional studies revealed that deposited materials have hexagonal and tetrahedral shape which showing excellent agreement with theoretical composition. The optical characterization shows that deposited Sb2O3 exhibited direct band gap which varied from 3.43 to 3.71 eV depending upon the concentration of spray solution. Electrical resistivity of the Sb2O3 thin film decreases with an increase in temperature indicating the semiconducting nature. The activation energy of the film is found to be varying from 0.764 to 0.798 eV depending upon the concentration of spray solution.

Multifunctional transition metal doped Sb2O3 thin film with high near-IR transmittance, anti-reflectance and UV blocking features

We present optically modified Sb2O3 thin film as a multi-functional layer that can be used as UV blocking, Near Infrared (NIR) transmitting and anti-reflecting layer suited for solar energy harvesting. Optical modifications are achieved by transition metal (Mn, Ni and Cu) doping through vacuum evaporation and solid state grinding which introduces new sidewise outgrowths emerging on the previously reported thorn structure of the film. The new structures are found growing along [110] direction, reducing the growth of thorns along [111] direction. Though the UV absorbance and wavelength range of absorbance are larger for transition metal doped Sb2O3 thin films, their UV reflectance is very low compared to the undoped films. However, they all show very good absorption in UVB and UVC regions and partial absorption in UVA region like undoped Sb2O3 thin films. Ultraviolet Protection Factor of all the films lie in the range 25–50 showing their competent UV blocking ability. NIR transmittances of Sb2O3 thin film increases with Ni and Mn doping, making them appropriate for NIR transmitting layers in cover glass of IR sensors and solar thermal energy collectors. Considering the multi-functionality, the overall performance of transition metal doped Sb2O3 thin films are more efficient than undoped film.

Preparation and Studying the Optical Properties of (Sb2o3) Thin Films

In this paper I present the preparation of (Sb2o3) thin films using thermal evaporation in vacuum, procedure with different thickness (100 ,150 ,200 ,and 250) nm, by using ( hot plate) from Molybdenum matter at temperature in ( 9000c) and the period of time (15mint) ,the prepared in a manner thermal evaporation in a vacuum and precipitated on glass bases, pure Antimony Trioxide (sb2o3 ) thin films with various condition have been successfully deposited by (T.E.V) on glass slide substrates. The substrates temperature of about 100oC and the vacuum of about 10-6 torr, to investigated oxidation of evaporated, measure spectra for prepared films in arrange of wavelength (250 – 1100 nm). The following optical properties have been calculated: the absorption coefficient, the forbidden (Eg) for direct and indirect transitions "absorbance, refractive index, extinction coefficient, real and imaginary parts" of the dielectric constant.

Humidity sensing characteristics of Sb2O3 thin films with transitional electrical behavior

The quest for smaller and more efficient humidity sensors is still on. Antimony trioxide thin films deposited by vacuum thermal evaporation onto heated glass substrates are analyzed as water vapor sensors, along with the study of their morpho-structural and electrical properties. Several substrate temperatures were set during the depositions, leading to films with significantly different electrical and humidity sensing features. Unusual increase of the electrical resistance of the films with temperature above 170 °C was noticed, representing the intermediate stage between extrinsic and intrinsic conductivity. In the extrinsic conduction region, the activation energy decreases exponentially with the substrate temperature during the initial depositions. The alternative current (AC), i.e. the electrical frequency characteristics versus humidity were also studied, allowing for the identification of the conduction mechanism within the samples, which is most probably short range hopping of charge carriers through trap sites, influences by the changing grain size and remanent amorphous phase within the films.

Wettability and optical properties of SnO–SnO2–Sb2O3 thin films deposited by simultaneous RF and DC magnetron sputtering

The SnO–SnO2–Sb2O3 films were deposited by simultaneous RF and DC magnetron sputtering. Increasing the ratio of O2/Ar pressure raised the intensity of the (311) peak of cubic Sb2O3 and the (200) peak of tetragonal SnO2, but clearly reduced the intensity of the (101) peak of tetragonal SnO2. According to visible-photoluminescence analyses, the blue shift of the PL peak can be attributed to the combination of smaller grains and higher compressive strain in the SnO–SnO2–Sb2O3 films. The nonlinear refractive indices of SnO–SnO2–Sb2O3 films deposited in a pure Ar or a mixed Ar–O2 atmosphere were measured by Moiré deflectometry, and were of the order of 10−8 cm2 W−1. At a higher ratio of O2/Ar pressure, a transparent SnO–SnO2–Sb2O3 film exhibited a lower surface roughness, better hydrophilicity, a higher linear refractive index and a lower extinction coefficient.

Exploring the photoluminescence emission behaviour of vacuum deposited Sb2O3 thin film having randomly oriented thorn like structures

An intense UV–visible photoluminescence of vacuum deposited Sb2O3 thin film surface crowded with randomly oriented thorn like structures have been studied using photoluminescence (PL) spectroscopy. The resulting UV emissions are near band edge (NBE) emissions. All the visible deep level emissions (DLE) are due to oxygen defect states. The thorn like structures is achieved by the inclined arrangement of substrates with respect to the source in the vacuum chamber. Some distorted polygonal shapes also emerge among the randomly oriented thorns giving an impression of a hybrid formation upon annealing. This formation of various structures leads to decreased UV NBE and defect level PL emission. The excitation wavelength dependence of PL emission has also been studied. The optical band gap energy of the film is found to be varying from 3.64 to 3.42 eV on annealing. The prepared films are of Sb2O3 cubic structure with polycrystalline nature as confirmed from XRD results. The emergence of thorn like morphology is clearly demonstrated with the aid of FE-SEM and TEM analyses. EDS verifies the elemental composition of Sb2O3. This paper provides an insight into the influence of confinement directions or film surface morphology on the PL emission intensities and PL emission ranges of Sb2O3.

High‐performance varistors prepared by hot‐dipping tin oxide thin films in Sb2O3 powder: Influence of temperature

AbstractA series of SnOx–Sb2O3 thin film varistors were fabricated through hot‐dipping tin oxide films deposited by radio‐frequency magnetron sputtering in Sb2O3 powder at varied temperatures in air. With the increase in hot‐dipping temperature (HDT) from 200°C to 600°C, the nonlinear coefficient (α) of the samples increased first and then decreased, reaching the maximum at 500°C, which was mainly determined by the completeness of high‐resistant Sb2O3 layer at tin oxide grain boundary and the chemical composition of tin oxide films. Correspondingly, the leakage current (IL) decreased first and increased later. The breakdown electric field (E100 mA) decreased constantly with increasing HDT. The SnOx–Sb2O3 film varistors prepared at 500°C exhibited the optimum nonlinear properties with the maximum α of 10.88, the minimum IL of 36.3 mA/cm2, and an E100mA of 0.0188 V/nm. The obtained nanoscaled film varistors would be promising in electrical/electronic devices working in low voltage.

Facile synthesis and photoelectrochemical characterization of Sb2O3 nanoprism arrays

Uniform Sb2O3 nanoprism arrays with high quality have been fabricated via a chemical bath deposition method. The first photocurrent density generated from the Sb2O3 thin films was 22 μA/cm2 at 1.23 V vs. reversible hydrogen electrode (RHE). The results illustrate the Sb2O3 thin films have potential applications in photoelectrochemical water splitting.

Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3

This work highlights some physical properties of Sb2O3 thin films obtained through heat treatment of Sb2S3 thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb2O3 thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated.

Synthesis, optical characterization and DFT calculations of electronic structure of Sb2O3 films obtained by thermal oxidation of Sb2S3

Sb2O3 thin films have been synthesized on glass substrates by oxidation of Sb2S3 thin films for 6 h in air atmosphere at 400 °C. Surface topography was performed by atomic force microscopy. Optical response has been investigated in the wavelength range between 0.3 and 1.8 μm. In the transparent region, the refractive index follows Cauchy's law, while, in the absorption zone, Wemple-DiDomenico model is verified. It leads to the single oscillator energy (E0 = 7.2 eV) and the dispersion energy (Ed = 33.1 eV). Plasma frequency, relaxation time and ε∞ permittivity have been estimated using the real and imaginary parts of dielectric constant. The dissipation factor exhibits an absorption edge of about 3.83 eV which matches the gap energy value of Sb2O3 material. The electronic properties of Sb2O3 such as the energy band structures, density of states were carried out using density functional theory (DFT). We have employed the semi-local gradient corrected exchange correlation functional (GGA-PBE). The calculated total and partial density of states indicate that the top of valance band is mainly built upon O-2p states and the bottom of the conduction band mostly originates from Sb-5p states. Moreover, the optical properties including the dielectric function, refractive index and extinction coefficient are investigated and analyzed. The calculated results are discussed and compared with our experimental results.

Synthesis and properties of crystalline thin film of antimony trioxide on the Si(1 0 0) substrate

Atomic-scale understanding and processing of the surface and interface properties of antimony trioxide (Sb2O3) are essential to the development of nanoscale Sb2O3 materials for various applications, such as photocatalysts, transparent conducting oxides, optical coatings, dielectric films, and fire retardants. Lack of atomically well-defined, crystalline Sb2O3 templates has however hindered atomic resolution characterization of the Sb2O3 properties. We report the preparation of crystalline Sb2O3 thin films on the Si(100) substrate with a simple process by oxidizing Sb-covered Si(100) in proper conditions. Physical properties of the synthesized films have been elucidated by low-energy electron diffraction, scanning tunneling microscopy and spectroscopy, and ab initio calculations. The spectroscopic results show that the band gap of Sb2O3 is 3.6eV around the gamma point (i.e. Γ). Calculations reveal energetically favored Sb2O3(100) surface structures. The findings open a new path for the atomic-scale research of Sb2O3.

Structure and electrical conduction of Sb2O3 thin films

Antimony trioxide (Sb2O3) thin films have been deposited onto glass substrates using thermal evaporation technique at room temperature. The structural feature and surface morphology were characterized by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Sandwich-type structures were deposited with films thickness d = 0.55 μm using evaporated electrodes of silver. Current-voltage (J-U) characteristics have been measured at various fixed temperatures in the range 293-473 K. In all cases, at low electric field (E 104 V/cm), non-ohmic behavior is observed. An analysis of the experimental data indicates that in the range of high-applied electric field, the dominant conduction mechanism is space charge limited currents (SCLC). Using the relevant SCLC theory, the carrier concentration, total trap concentration and the ratio of free charge to trapped charge have been calculated and correlated with changes in the structures of antimony trioxide thin films. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Electrical conductivity of amorphous V2O5–Sb2O3 thin films

Amorphous thin films of V2O5–Sb2O3, in the molar ratio of V2O5:Sb2O3 as 100:0, 98:2, 94:6, 92:8 respectively, were obtained by the vacuum–evaporation technique. The dc conductivities of the films were measured in the temperature range of 303–423 K. The experimental data have been analyzed in light of the small polaronic hopping model of Mott and the percolation approach of Triberis and Friedman. The estimated model parameters are found to be consistent with the formation of localized states in these films.

Thermoelectric power measurements on vacuum-deposited Sb2O3 thin films

Thermoelectric power measurements on vacuum-deposited Sb2O3 thin films