Rutherford Backscattering Research Articles

Analysis of Rutherford backscattering spectra with CNN-GRU mixture density network

Ion Beam Analysis (IBA) utilizing MeV ion beams provides valuable insights into surface elemental composition across the entire periodic table. While ion beam measurements have advanced towards high throughput for mapping applications, data analysis has lagged behind due to the challenges posed by large volumes of data and multiple detectors providing diverse analytical information. Traditional physics-based fitting algorithms for these spectra can be time-consuming and prone to local minima traps, often taking days or weeks to complete. This study presents an approach employing a Mixture Density Network (MDN) to model the posterior distribution of Elemental Depth Profiles (EDP) from input spectra. Our MDN architecture includes an encoder module (EM), leveraging a Convolutional Neural Network-Gated Recurrent Unit (CNN-GRU), and a Mixture Density Head (MDH) employing a Multi-Layer Perceptron (MLP). Validation across three datasets with varying complexities demonstrates that for simple and intermediate cases, the MDN performs comparably to the conventional automatic fitting method (Autofit). However, for more complex datasets, Autofit still outperforms the MDN. Additionally, our integrated approach, combining MDN with the automatic fit method, significantly enhances accuracy while still reducing computational time, offering a promising avenue for improved analysis in IBA.

The Influence of Annealing on the Compositional and Crystallographic Properties of Sputtered Li–Al–O Thin Films

Li–Al–O materials are interesting for several applications. Herein, a Li–Al–O thin‐film materials library, deposited by inert magnetron sputtering and postdeposition annealing in O2 atmosphere, is used to study the effects of different annealing temperatures (300–850 °C) and durations (1 min to 7 h) on crystallinity and composition of the films. X‐ray photoelectron spectroscopy depth profiling reveals inhomogeneous compositional depth profiles of conventionally annealed films (300–650 °C, 3–7 h) with increased Li contents toward the film surface and increased Al contents toward the film–substrate interface, as confirmed by a combination of Rutherford backscattering spectrometry and deuteron‐induced nuclear reaction analysis. The minimum temperature for the formation of crystalline LiAlO2 in the otherwise amorphous films is 550 °C. The undesired inhomogeneous depth profiles are transformed into homogeneous ones by rapid thermal annealing (750–850 °C, 1–10 min), while simultaneously causing the formation of crystalline LiAlO2. Therefore, rapid thermal annealing is shown to be more suitable than conventional annealing for the thermal processing of Li–Al–O thin films. Moreover, this conclusion is expected to have broader relevance beyond Li–Al–O materials, as it is likely to apply to other Li metal oxides, of which there are many technologically relevant ones.

Influence of aluminum addition on structure, hardness, and oxidation resistance of Ta1−xAlxN thin films

Ta1−xAlxN thin films with 5, 15, and 40 at.% Al addition were co‐deposited by reactive magnetron sputtering and characterized by Rutherford backscattering spectroscopy (RBS), grazing angle X‐ray diffraction (GAXRD), X‐ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nanohardness, and oxidation tests. GAXRD and XPS analyses showed, regardless of the % Al added, the non‐existence of ternary nitride Ta1−xAlxN, but always as individual binary nitrides, TaN and AlN. Sample TaAlN_15 obtained the highest hardness and H3/E2 values, possibly due to the AlN grains presence, which were efficient in distorting the TaN lattice. All samples failed oxidation tests at 873 K, showing that the Al addition was not efficient in improving this property for tantalum aluminum nitride thin films.

Ion Implantation‐Induced Bandgap Modifications in the ALD TiO2 Thin Films

Atomic layer deposited (ALD) TiO2 layers are implanted with N, O, and Ar ions to reduce the bandgap, thereby increasing its absorbance in the visible region. The implantation is accomplished with 40 keV nitrogen, 45 keV oxygen, and 110 keV argon ions in the fluence range 1 × 1015 to 5.6 × 1016 ions cm−2. The energy of each incident ion is tuned using stopping and range of ions in matter (SRIM) to produce defects around the same projected range. The structural analysis of the as‐deposited film is performed through X‐ray diffraction (XRD), scanning electron microscopy (SEM), Rutherford backscattering (RBS), and time of flight elastic recoil detection analysis (ToF‐ERDA). The implanted layers are characterized using diffuse reflectance spectroscopy (DRS) and Fourier transform infrared spectroscopy (FTIR) to study the optical and vibrational properties of the films. The results demonstrate that nitrogen implantation in TiO2 reduces the reflectance from 43.52% to 26.31% and bandgap from 2.68 to 2.61 eV, making it a promising bandgap‐engineered material for capping layers in solar cell applications. The refractive index of the 40 keV nitrogen ion implanted film at 1 × 1016 ions cm−2 (N‐16) increases from ≈2.8 to ≈2.95. OPAL2 solar cell simulations show that the N‐16 implanted TiO2 anti‐reflective coatings (ARC) can enhance the absorbed photocurrent by 7.3%.

Practices and Rules of 16th Century Genoese Gilding: Exploring Gold Leaf Thickness and Caratage through X-ray and Ion Beam Techniques

This study investigates the practices and rules of Genoese gilding, drawing insights from a 16th-century manuscript containing regulations for gold leaf production. Employing X-ray and ion beam techniques, we quantitatively assess the manuscript’s gold leaf thickness without destructive sampling. Artisanal goldbeater-produced leaves of different thicknesses, applied with a guazzo or mordant technique, served as standards. Further analysis of samples with unknown thickness from the furniture of Palazzo Spinola di Pellicceria in Genoa (Italy) has confirmed the method’s applicability to practical cases. External beam Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE) analyses were carried out using 3 MeV protons at the LABEC accelerator laboratory in Florence. A linear relationship between Gold Lα peak yield and leaf thickness, as measured by RBS, has been established for optimal calibration of portable or hand-held X-Ray fluorescence (XRF) instrumentation for in situ measurements. Moreover, the caratage of the gold foil preserved in the manuscript has been assessed.

SiC and Si detectors comparison for high carbon energy spectrometry

An innovative SiC Schottky junction and a traditional p-n Si surface barrier detector have been compared to detect carbon ions with MeVs kinetic energy. To this, a comparison was performed during Rutherford backscattering spectrometry (RBS) using 2–10 MeV carbon ion beams. The energy resolution and detection efficiency for RBS analysis using the two detectors and their detection electronics are presented.The detector parameters dependencies on the surface passivating layers, ion energy and current dependence, ion penetration depth, detection efficiency, energy resolution, and others are discussed.The comparison of RBS analysis with SiC and Si is investigated highlighting the advantages and disadvantages of using SiC with respect to the traditional Si surface barrier detectors. The two detectors employed for proton, helium and carbon RBS spectrometry of different targets have been also compared on the base of the literature data.

APPLICATION OF RUTHERFORD BACKSCATTERING METHOD FOR STUDYING RADIATION-INDUCED SEGREGATION OF HIGH-ENTROPY NICKEL-BASED ALLOYS

In this study, radiation-induced segregation was studied in high-entropy alloys (HEA) CoCrFeNi, CoCrFeMnNi, irradiated with helium ions He2+ with an energy of 40 keV at room temperature. Changes in the concentrations of HEAs and their depth distributions were studied by Rutherford Backscattering (RBS) and energy dispersive x-ray spectroscopy (EDS) methods. Measurements using the RBS and EDS methods showed that non-irradiated HEAs have a composition close to equiatomic, where the average concentration for CoCrFeNi is 24.8 atomic percents (at.%), and for CoCrFeMnNi – 20 at.%. The EDS results were significantly different from the RBS in Ni/Co concentrations, and indicated no significant changes in element distribution in both HEAs after irradiation. According to the RBS data, the largest changes in concentrations during irradiation in both HEAs relate to the enrichment of Ni atoms. In CoCrFeNi, upon irradiation, Ni/Co atoms undergo the greatest segregation, and in CoCrFeMnNi, the Ni/Co/Fe concentrations change significantly. In CoCrFeMnNi, the change in element concentrations with increasing irradiation fluence was more pronounced than in CoCrFeNi. In CoCrFeMnNi, changes in concentrations of all elements at both fluences reached 0.5–17% (0.1–3.1 at.%) and exceeded changes in CoCrFeNi, which reached 2–11% (0.5–1.9 at.%). It was found that the resistance to segregation when irradiated with helium ions under these conditions was lower for CoCrFeMnNi than for CoCrFeNi. In CoCrFeNi and CoCrFeMnNi, changes in the concentrations of Co, Fe, Cr, and Mn were significantly less than changes near sinks and defect clusters when irradiated with nickel ions with similar doses in other studies at temperatures close to the halfmelting temperature of nickel HEAs. The RBS study showed a uniform distribution of atoms in depth and resistance to segregation in CoCrFeNi, CoCrFeMnNi when irradiated with helium ions.

In Plasma ion beam analysis of polymer layer and adsorbed H monolayer etching

We present two experiments where a layer is plasma-etched while monitoring its evolution by in plasma ion beam analysis. First, we etch a photoresist with a diffuse O2 plasma at low pressure. Using a 4.335 MeV He beam, Rutherford Backscattering Spectrometry and Elastic Recoil Detection spectra are acquired every minute during 8 h. Etching of most elements follows a linear trend, but H desorbs faster at the beginning of the plasma process, which we ascribe to the ion beam-induced desorption. In addition, we observe a thin Mo layer building up at the surface, likely due to the sputtering of an electrode in the plasma source. Secondly, we etch in HF a crystalline Si (c-Si) sample with <100> surface orientation, which should leave 14 H/nm2 bonded to the c-Si surface. The sample is then introduced in the chamber and exposed to a diffuse Ar plasma at low pressure. During plasma processing, the H surface concentration is monitored using a resonant nuclear reaction with a 15N beam at 6.385 MeV. The initial H concentration is 11.7±1.1 H/nm2, and it decreases over a 3-minute timescale to an equilibrium concentration of 6.0±0.8 H/nm2. Over the range of experimental conditions investigated, the diffuse Ar plasma is therefore not able to entirely sputter the H from the c-Si surface.

Multiscale phonon thermal transport in nano-porous silicon

We performed a comprehensive multi-scale phonon-mediated thermal transport study of nano-porous silicon (np-Si) films with average porosities in the range of φ = 30%–70%. This depth-resolved thermal characterization involves a combination of optical methods, including femtosecond laser-based time-domain thermo-reflectance (TDTR) with MHz modulation rates, opto-thermal micro-Raman spectroscopy, and continuum laser wave-based frequency domain thermo-reflectance (FDTR) with kHz modulation rates probing depths of studied samples over 0.5–1.2, 2–3.2, and 23–34 μm, respectively. We revealed a systematic decrease in thermal conductivity (k) with the rise of φ, i.e., with the lowering of the Si crystalline phase volumetric fraction. These data were used to validate our semi-classical phonon Monte Carlo and finite element mesh simulations of heat conduction, taking into account disordered geometry configurations with various φ and pore size, as well as laser-induced temperature distributions, respectively. At high φ, the decrease in k is additionally influenced by the disordering of the crystal structure, as evidenced by the near-surface sensitive TDTR and Rutherford backscattering spectroscopy measurements. Importantly, the k values measured by FDTR over larger depths inside np-Si were found to be anisotropic and lower than those detected by the near-surface sensitive TDTR and Raman thermal probes. This finding is supported by the cross-sectional scanning electron microscopy image indicating enhanced φ distribution over these micrometer-scale probed depths. Our study opens an avenue for nano-to-micrometer scale thermal depth profiling of porous semiconducting media with inhomogeneous porosity distributions applicable for efficient thermoelectric and thermal management.

Enhanced Antibacterial Properties of Titanium Surfaces through Diversified Ion Plating with Silver Atom Deposition.

In this study, we investigate the antibacterial effect of silver atoms implanted into a thin surface layer of titanium at low energies using an alternative ion plating technology called Diversified Ion Plating. Silver atoms were incorporated into titanium samples using reactive low-voltage ion plating at 2 keV and 4 keV. Surface modifications and morphology were evaluated using wettability, profilometry measurements, and energy-dispersive spectroscopy. For a precise determination of the quantity and depth of implanted silver atoms on titanium surfaces, a combination of experimental techniques such as Rutherford Backscattering Spectrometry along with Monte Carlo simulations were utilized. To assess the antibacterial effects of the silver atoms incorporated into pure titanium surfaces, bacterial suspension immersion tests were performed with a standard strain of Staphylococcus aureus (ATCC 12600). The outcomes indicate that titanium surfaces implanted with silver atoms were more effective in inhibiting the growth of Staphylococcus aureus than pure titanium surfaces. Better results were found when the deposition was performed at 4 keV, indicating that a deeper implantation of silver, spanning a few nanometers, can result in a longer and more effective release of silver atoms. These findings suggest the potential for the development of new, cost-effective biomaterials, paving the way for improved implant materials in various health-related applications.

Li depth analysis of Au/LiMn2O4/LATP/Ge/(Au and Al) by means of ERD and RBS techniques with MeV O4+ ion beams

Depth profiles of Li in Au/LiMn2O4(LMO)/LATP/Ge/(Au and Al) were measured by means of elastic recoil detection (ERD) and Rutherford backscattering spectrometry (RBS) techniques. The charging and discharging characteristics indicated that the Au/LiMn2O4(LMO)/LATP/Ge/(Au and Al) batteries were rechargeable. The Ge-Au alloy was formed by diffusion of Au into Ge during the sample preparation and under discharging and subsequent to charging, while no reaction took place at the interface of Al/Ge. These data are discussed in terms of difference in work functions between Au and Al due to the transport fraction of Li+ ions in LATP less than unity.

Temperature Effects of Nuclear and Electronic Stopping Power on Si and C Radiation Damage in 3C-SiC.

Silicon carbide has been considered a material for use in the construction of advanced high-temperature nuclear reactors. However, one of the most important design issues for future reactors is the development of structural defects in SiC under a strong irradiation field at high temperatures. To understand how high temperatures affect radiation damage, SiC single crystals were irradiated at room temperature and after being heated to 800 °C with carbon and silicon ions of energies ranging between 0.5 and 21 MeV. The number of displaced atoms and the disorder parameters have been estimated by using the channeling Rutherford backscattering spectrometry. The experimentally determined depth profiles of induced defects at room temperature agree very well with theoretical calculations assuming its proportionality to the electronic and nuclear-stopping power values. On the other hand, a significant reduction in the number of crystal defects was observed for irradiations performed at high temperatures or for samples annealed after irradiation. Additionally, indications of saturation of the crystal defect concentration were observed for higher fluences and the irradiation of previously defected samples.

Conformal Zn-Benzene Dithiol Thin Films for Temperature-Sensitive Electronics Grown via Industry-Feasible Atomic/Molecular Layer Deposition Technique.

The atomic/molecular layer deposition (ALD/MLD) technique combining both inorganic and organic precursors is strongly emerging as a unique tool to design exciting new functional metal-organic thin-film materials. Here, this method is demonstrated to work even at low deposition temperatures and can produce highly stable and conformal thin films, fulfilling the indispensable prerequisites of today's 3D microelectronics and other potential industrial applications. This new ALD/MLD process is developed for Zn-organic thin films grown from non-pyrophoric bis-3-(N,N-dimethylamino)propyl zinc [Zn(DMP)2] and 1,4-benzene dithiol (BDT) precursors. This process yields air-stable Zn-BDT films with appreciably high growth per cycle (GPC) of 4.5 Å at 60°C. The Zn/S ratio is determined at 0.5 with Rutherford backscattering spectrometry (RBS), in line with the anticipated (Zn─S─C6H6─S─)n bonding scheme. The high degree of conformality is shown using lateral high-aspect-ratio (LHAR) test substrates; scanning electron microscopy (SEM) analysis shows that the film penetration depth (PD) into the LHAR structure with cavity height of 500nm is over 200µm (i.e., aspect-ratio of 400). It is anticipated that the electrically insulating metal-organic Zn-BDT thin films grown via the solvent-free ALD/MLD technique, can be excellent barrier layers for temperature-sensitive and flexible electronic devices.

The Influence of the Structural Parameters of Nanoporous Alumina Matrices on Optical Properties

In this work, two types of nanoporous alumina membranes were prepared and tested. Structural features of the samples obtained by using different acids were investigated by scanning electron microscopy (SEM). And further SEM-images were analyzed by different types of fractal dimension estimation methods. The transmission and scattering of accelerated He+ ions were studied in experiments on the ion irradiation of dielectric channels based on porous alumina. An ion accelerator was used as a source of the He+ beam with an energy of 1.7 MeV. Ion scattering was studied by Rutherford backscattering spectrometry. Helium transition through nanoporous alumina at various angles between the normal to the sample and the beam direction were observed. It is shown that the porous structure of anodic aluminum oxide is excellent as a dielectric matrix of nanocapillaries. Owing to the small angle scattering, it allows for the transportation of the accelerated charged particles through the dielectric capillaries, and, as a result, the localization of high energy ion irradiation effects. Additionally, according to the transmission of UV–V is spectra, the energy gaps of samples obtained were calculated.

Patterning of COC Polymers by Middle‐Energy Ion Beams for Selective Cell Adhesion in Microfluidic Devices

AbstractMicrofluidic devices play a crucial role in advanced cell biology applications, including cell separations, cultivations, migration and interaction studies, diagnostic devices, and organ‐on‐chips. One of the frequent purposes of such devices is the ability to selectively address the attachment of cells at defined locations on the surface. This study explores the application of middle‐energy carbon, oxygen, and nitrogen ions to locally modify the surface of cyclic olefin copolymer (COC) thermoplastic material, allowing selective cell growth on patterned polymer surfaces. The investigation considers ion element type, ion beam energy, and ion irradiation fluence, analyzing their influence on the modification effect. Characterization of the modified surfaces involves various surface‐analytical methods such as contact angle, energy dispersive spectroscopy (SEM‐EDX), atomic force microscopy (AFM), x‐ray photoelectron spectroscopy (XPS), rutherford backscattering spectrometry (RBS), and elastic recoil detection analysis (ERDA). The study extends to practical aspects, with a representative cancer cell line, MCF‐7, grown on the patterned surface to evaluate the degree of selective attachment. Additionally, the stability of the irradiated patterns is tested under elevated temperatures beyond the glass transition temperature (Tg), demonstrating the compatibility of the approach with hot embossing technology. The findings underscore the potential of ion beam treatment for COC in cell‐biology‐related applications, offering insights into surface modification techniques for enhanced functionality in microfluidic devices.

Quantitative characterization of occupational sites of implanted P atoms in diamond

The authors implanted P atoms at 50 and 140-keV energies with respective fluences of 1×1014 and 2×1014/cm2 into diamond thin films synthesized by chemical vapor deposition on the type-Ib diamond substrate formed by high-pressure and high-temperature conditions. The occupational sites of implanted P atoms were determined in each processing stage of P implantation, ion-beam-induced epitaxial crystallization (IBIEC) annealing by 3-MeV-Ne2+ ion irradiation at 750°C, and thermal annealing at 850°C in vacuum, by quantitatively comparing the random and channeling yields in Rutherford backscattering (RBS) measurements. In the analysis of RBS spectra, simulated distributions were fitted to the experimentally obtained spectra and we quantitatively identified the occupational sites and ratio of implanted P atoms. In addition, we investigated the diffusion phenomenon of implanted P atoms during annealing processes from the depth profile of scattered He ions. Consequently, the averaged occupational ratio in the substitutional lattice site was stably recorded around 50%. From the depth profile in the RBS spectra, thermal diffusion of implanted P atoms was clearly observed during the last thermal annealing after MeV-IBIEC annealing. We finally discuss the potentials of the MeV-IBIEC irradiation at relatively low temperatures applying to useful and credible annealing methods for electrical activation as well as recovery of damaged crystallinity.

Study of surface structure and interfacial effects on optical and magnetic properties of un-doped and Si-doped hematite films

Thermal evaporation technique has been used to synthesize the α-Fe2O3 (hematite) and Si-doped hematite films on three different substrates (SiO2/Si, Al2O3 and quartz). The post-deposition heat treatment at 800 °C has further improved the crystalline nature of the films. Rutherford backscattering spectroscopy has provided information for surface elemental composition and depth profile. Raman spectra have supported the formation of rhombohedral phase and inter-layer diffusion between substrate and films. The x-ray photoelectron spectroscopy has confirmed the mixed-valence oxidation states for Fe ions and +4 state for the Si ions in Si-doped hematite films. The optical reflectance spectra in the UV–Visible region indicated contributions from the films and film-substrate interface. The Si-doping has enhanced soft ferromagnetic properties in the hematite film with noticeable decrease of the magnetic coercivity and increase of the magnetic moment. The films showed blocking of magnetization at lower temperatures, typically below 125 K, and a wide thermomagnetic irreversibility between zero-field cooled and field cooled magnetization curves. The modified surface chemical structure, ferromagnetism and optical properties in the Si doped hematite films promise their potential applications in spintronics.

Formation of partially embedded Au nanostructures: Ion beam irradiation on thin film.

The Au partially embedded nanostructure (PEN) is synthesized by ion irradiation on an Au thin film deposited on a glass substrate using a 50 keV Ar ion. Scanning electron microscopy results show ion beam-induced restructuring from irregularly shaped nanostructures (NSs) to spherical Au NSs, and further ion irradiation leads to the formation of well-separated spherical nanoparticles. Higuchi's algorithm of surface analysis is utilized to find the evolution of surface morphology with ion irradiation in terms of the Hurst exponent and fractal dimension. The Au PEN is evidenced by Rutherford backscattering spectrometry and optical studies. Also, the depth of the mechanism behind synthesized PEN is explained on the basis of theoretical simulations, namely, a unified thermal spike and a Monte Carlo simulation consisting of dynamic compositional changes (TRIDYN). Another set of plasmonic NSs was formed on the surface by thermal annealing of the Au film on the substrate. Glucose sensing has been studied on the two types of plasmonic layers: nanoparticles on the surface and PEN. The results reveal the sensing responses of both types of plasmonic layers. However, PEN retains its plasmonic behavior as the NSs are still present after washing with water, which demonstrates the potential for reusability. RESEARCH HIGHLIGHTS: Synthesis of PENs by ion irradiation Utilization of Higuchi's algorithm to explore the surface morphology. Unified thermal spike and TRIDYN simulations being used to explain the results. Glucose is only used as a test case for reusability of substrate.

Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi2Se3 thin film

In the present study, we have investigated the effect of magnetic Cr doping on the transport properties of a sputtered Bi2Se3 thin film on the SrTiO3 (110) substrate. The high-resolution x-ray diffraction and Raman spectroscopy measurements revealed the growth of rhombohedral Bi2Se3 thin films. Further electronic and compositional analysis was done by x-ray photoemission spectroscopy and Rutherford backscattering spectroscopy, and the x-value was estimated to be 0.18 in the Bi2−xCrxSe3 thin film. The variation in the resistivity with temperature (2–300 K) revealed the metallic nature in undoped Bi2Se3 up to 30 K and upturn resistivity below 30 K. The Cr-doped Bi2Se3 resistivity data show a traditional semiconducting nature up to 25 K and take an abrupt upturn resistivity below 25 K. The resistivity behavior of both samples was explained by adopting a model that consists of the total resistance, a combination of bulk and surface resistance in parallel. The bulk bandgap value determined by this method is obtained to be 256 meV in an undoped Bi2Se3 thin film. Magnetoconductance data of the undoped thin film revealed a weak anti-localization (WAL) effect, while the Cr-doped thin film showed a weak localization (WL) effect at low temperatures (&amp;lt;50 K). At low magnetic field and low temperature, a competing nature of WAL and WL effects was prominent in the Cr-doped film. A drastic increase in the electrical resistance suggests that Cr doping can significantly modify the electrical properties of Bi2Se3 thin films, which could have potential applications in futuristic devices.

Fabrication of 208Pb and 193Ir targets on Al-backing using high/ultra-high vacuum deposition technique for low-energy nuclear reaction experiments

Aiming to study the interplay of different nuclear reactions at low incident energies, thin targets of enriched stable isotopes, 208Pb and 193Ir, have been fabricated at the target development laboratory of the Inter-University Accelerator Centre (IUAC), New Delhi. As a means of preparing a large number of thin isotopically pure targets, physical vapour deposition techniques, (a) resistive heating, for fabrication of 208Pb targets of mass thickness 160-340μg/cm2, and (b) electron-gun evaporation technique, for fabrication of 193Ir targets of mass thickness 17-60μg/cm2, have been employed. The fabricated targets were characterized using Rutherford Backscattering Spectrometry (RBS) and Field Emission Scanning Electron Microscopy (FE–SEM). The thickness of targets was estimated based on the evaporation rate and measured by RBS. The RBS was employed to analyse the samples for trace- and heavy impurities, provided the measurements and analysis suggest that the targets prepared in the present work do not contain any impurities. FE-SEM was employed to examine the surface morphology and microstructure in high resolution. This technique enables the detection of any morphological changes induced by the irradiation process, offering insights into the effects of irradiation on the target films. The targets have been successfully deployed to measure complete and incomplete fusion excitation functions, mass distribution of fission fragments, and forward ranges of target-like recoils in 12C + 208Pb, 193Ir reactions from sub- to above barrier energies. Preliminary data analysis suggests the achievement of high-quality 208Pb and 193Ir target foils.