Ru Films Research Articles

Tuning the magnetic properties of ultrathin magnetic films with MgO as the buffer layer

To minimize the screening effect of a metallic ferromagnetic film and improve the effectiveness of electric field modulation, high-quality ultrathin magnetic film is one of the critical prerequisites. Here ultrathin magnetic films and synthetic antiferromagnetics (SAFs) are deposited on SiO2 substrates at room temperature using the magnetron sputtering. Atomic force microscopy is used to characterize the roughness of MgO, Nb, Ru, W, and CoFeB films, revealing their atomic-level flatness, with root mean square roughness values below 0.3 nm, which are crucial in the subsequent preparation of ultrathin SAF to achieve high-quality interfaces. The results from the magneto-optical Kerr microscopy suggest that when MgO is 1.48 nm, ultrathin 0.6 nm CoFeB exhibits stable room-temperature perpendicular magnetic anisotropy (PMA) and there is a correlation between room-temperature ferromagnetism and MgO thickness. For SAFs, ultrathin 0.6 nm CoFeB-based SAF exhibits room-temperature antiferromagnetism via the Ruderman-Kittel-Kasuya-Yosida interaction mechanism. The exchange coupling field demonstrates that the transition between ferromagnetic coupling and antiferromagnetic coupling can be regulated by adjusting both the thickness of the non-magnetic spacer layer and the CoFeB layer. This work lays the ground for the potential applications of high-density storage and efficient electric field modulation of ferromagnetic multilayers for improving energy efficiency.

Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films

Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films

Metallic nanofilms on Si(100) and SiO2 grown with a ruthenium precursor

Ruthenium (Ru) nanofilms (<3 nm) were prepared using tricarbonyl(trimethylenemethane)ruthenium, Ru(TMM)(CO)3 at 230 °C. We show that the surface morphology and electrical conductance of Ru nanofilms are substantially different on H:Si(100) and SiO2/Si(100) substrates. Two-dimensional (2D) Ru nanofilms (∼1 nm) were formed on H:Si(100), while thick (∼3 nm) granular Ru films were formed on SiO2 substrate under the same growth conditions, as confirmed by cross-sectional transmission electron microscopy and X-ray photoelectron spectroscopy. Using scanning probe microscopy, the metallic conductance of Ru grains on H:Si(100) substrates was recognized. On ultrathin (1 nm) SiO2/Si(100) substrates, the spatial separation of Ru grains facilitates the single electron tunneling (SET) phenomenon in the double barrier tunnel junction structure. The results emphasized the difference in carrier transport in Ru nanofilms on Si and SiO2 substrates.

Area-Selective Atomic Layer Deposition of Ru Using Carbonyl-Based Precursor and Oxygen Co-Reactant: Understanding Defect Formation Mechanisms.

Area selective deposition (ASD) is a promising IC fabrication technique to address misalignment issues arising in a top-down litho-etch patterning approach. ASD can enable resist tone inversion and bottom-up metallization, such as via prefill. It is achieved by promoting selective growth in the growth area (GA) while passivating the non-growth area (NGA). Nevertheless, preventing undesired particles and defect growth on the NGA is still a hurdle. This work shows the selectivity of Ru films by passivating the Si oxide NGA with self-assembled monolayers (SAMs) and small molecule inhibitors (SMIs). Ru films are deposited on the TiN GA using a metal-organic precursor tricarbonyl (trimethylenemethane) ruthenium (Ru TMM(CO)3) and O2 as a co-reactant by atomic layer deposition (ALD). This produces smooth Ru films (<0.1 nm RMS roughness) with a growth per cycle (GPC) of 1.6 Å/cycle. Minimizing the oxygen co-reactant dose is necessary to improve the ASD process selectivity due to the limited stability of the organic molecule and high reactivity of the ALD precursor, still allowing a Ru GPC of 0.95 Å/cycle. This work sheds light on Ru defect generation mechanisms on passivated areas from the detailed analysis of particle growth, coverage, and density as a function of ALD cycles. Finally, an optimized ASD of Ru is demonstrated on TiN/SiO2 3D patterned structures using dimethyl amino trimethyl silane (DMA-TMS) as SMI.

Si precursor inhibitors for area selective deposition of Ru

Area-selective atomic layer deposition (AS-ALD) using highly process-compatible precursor inhibitors (PIs) has garnered attention because of the need to overcome three-dimensional nanofabrication bottlenecks. The main advantages of precursor inhibitor (PI) molecules are their high process compatibility and their inherent bifunctionality as inhibitors and precursors. Herein, we examined the inhibition properties, adsorption mechanisms, and adsorption configurations of two PIs, bis(N,N-dimethylamino)dimethylsilane (PI1) and tris(dimethylamino)silane (PI2). Both PIs selectively inhibited the SiO2 surface but not the Cu surface, which enabled the AS-ALD of Ru films on the latter. The inhibition mechanisms were elucidated on the basis of chemical reactivity and steric hindrance considerations using density functional theory calculations and Monte Carlo simulations. PI1 featured a larger areal coverage than PI2 because of the favorable adsorption configuration of the former, inducing a stronger steric hindrance effect and achieving a higher inhibition performance against Ru ALD, although the two PIs had similar chemical reactivities toward the examined surface. Furthermore, PI1 and PI2 formed SiO2 ALD films when ozone was used as a reactant. The differences in the growth characteristics of the corresponding ALD SiO2 films were explained by the different adsorption configurations of PIs. Thus, our work elucidates the adsorption configurations of silane-based PIs and thus paves the way for the more effective utilization of their bifunctionality, inhibition properties, and growth characteristics in future AS-ALD processes.

Selective nitride passivation using vapor-dosed aldehyde inhibitors for area-selective atomic layer deposition

We present a methodology for achieving selective deposition of Ru films through surface modification via vapor-phase functionalization of aldehyde inhibitor molecules. We conduct a comparative evaluation of the blocking capability using vapor-dosing of two different types of aldehyde molecules: undecylaldehyde and benzaldehyde as aliphatic and aromatic ring inhibitors, respectively, on W, TiN, SiN, and SiO2 substrates. By adjusting the vapor-process conditions of both aldehydes, we confirm chemo-selective adsorption on nitride surfaces, resulting in significant growth retardation during subsequent Ru atomic layer deposition. Under optimized conditions for achieving nitride versus oxide selectivity, we successfully demonstrated area-selective atomic layer deposition (AS-ALD) of Ru films on patterned-TiN/SiO2 substrates.

Wafer-scale development, characterization, and high temperature stabilization of epitaxial Cr2O3 films grown on Ru(0001).

This work outlines conditions suitable for the heteroepitaxial growth of Cr2O3(0001) films (1.5-20nm thick) on a Ru(0001)-terminated substrate. Optimized growth is achieved by sputter deposition of Cr within a 4mTorr Ar/O2 20% ambient at Ru temperatures ranging from 450 to 600 °C. The Cr2O3 film adopts a 30° rotated honeycomb configuration with respect to the underlying Ru(0001) substrate and exhibits a hexagonal lattice parameter consistent with that for bulk Cr2O3(0001). Heating to 700 °C within the same environment during film preparation leads to Ru oxidation. Exposure to temperatures at or above 400 °C in a vacuum, Ar, or Ar/H2 3% leads to chromia film degradation characterized by increased Ru 3d XPS intensity coupled with concomitant Cr 2p and O 1s peak attenuations when compared to data collected from unannealed films. An ill-defined but hexagonally well-ordered RuxCryOz surface structure is noted after heating the film in this manner. Heating within a wet Ar/H2 3% environment preserves the Cr2O3(0001)/Ru(0001) heterolayer structure to temperatures of at least 950 °C. Heating an Ru-Cr2O3-Ru heterostacked film to 950 °C within this environment is shown by cross-sectional scanning/transmission electron microscopy (S/TEM) to provide clear evidence of retained epitaxial bicrystalline oxide interlayer structure, interlayer immiscibility, and epitaxial registry between the top and bottom Ru layers. Subtle effects marked by O enrichment and O 1s and Cr 2p shifts to increased binding energies are noted by XPS in the near-Ru regions of Cr2O3(0001)/Ru(0001) and Ru(0001)/Cr2O3(0001)/Ru(0001) films after annealing to different temperatures in different sets of environmental conditions.

Surface treatment of TaN for sub-2 nm, smooth, and conducting atomic layer deposition Ru films

Atomic layer deposition (ALD) of ruthenium (Ru) is being investigated for next generation interconnects and conducting liners for copper metallization. However, integration of ALD Ru with diffusion barrier refractory metal nitrides, such as tantalum nitride (TaN), continues to be a challenge due to its slow nucleation rates. Here, we demonstrate that an ultraviolet-ozone (UV-O3) pretreatment of TaN leads to an oxidized surface that favorably alters the deposition characteristics of ALD Ru from islandlike to layer-by-layer growth. The film morphology and properties are evaluated via spectroscopic ellipsometry, atomic force microscopy, electrical sheet resistance measurements, and thermoreflectance. We report a 1.83 nm continuous Ru film with a roughness of 0.19 nm and a sheet resistance of 10.8 KΩ/□. The interface chemistry between TaN and Ru is studied by x-ray photoelectron spectroscopy. It is shown that UV-O3 pretreatment, while oxidizing TaN, enhances Ru film nucleation and limits further oxidation of the underlying TaN during ALD. An oxygen “gettering” mechanism by TaN is proposed to explain reduced oxygen content in the Ru film and higher electrical conductivity compared to Ru deposited on native-TaN. This work provides a simple and effective approach using UV-O3 pretreatment for obtaining sub-2 nm, smooth, and conducting Ru films on TaN surfaces.

Porous Electropolymerized Films of Ruthenium Complex: Photoelectrochemical Properties and Photoelectrocatalytic Synthesis of Hydrogen Peroxide

The photoelectrochemical cells (PECs) performing high-efficiency conversions of solar energy into both electricity and high value-added chemicals are highly desirable but rather challenging. Herein, we demonstrate that a PEC using the oxidatively electropolymerized film of a heteroleptic Ru(II) complex of [Ru(bpy)(L)2](PF6)2 Ru1 {bpy and L stand for 2,2′-bipyridine and 1-phenyl-2-(4-vinylphenyl)-1H-imidazo[4,5-f][1,10]phenanthroline respectively}, polyRu1, as a working electrode performed both efficient in situ synthesis of hydrogen peroxide and photocurrent generation/switching. Specifically, when biased at −0.4 V vs. saturated calomel electrode and illuminated with 100 mW·cm−2 white light, the PEC showed a significant cathodic photocurrent density of 9.64 μA·cm−2. Furthermore, an increase in the concentrations of quinhydrone in the electrolyte solution enabled the photocurrent polarity to switch from cathodic to anodic, and the anodic photocurrent density reached as high as 11.4 μA·cm−2. Interestingly, in this single-compartment PEC, the hydrogen peroxide yield reached 2.63 μmol·cm−2 in the neutral electrolyte solution. This study will serve as a guide for the design of high-efficiency metal-complex-based molecular systems performing photoelectric conversion/switching and photoelectrochemical oxygen reduction to hydrogen peroxide.

Effect of Ruthenium Targets on the Growth and Electrical Properties of Sputtering Ruthenium Films

Ruthenium targets were prepared by vacuum hot pressing of ruthenium powder with different morphologies. Ruthenium films were then deposited on a SiO2/Si(100) substrate for different times by radio frequency (RF) magnetron sputtering. The relationship in terms of the microstructure and electrical properties between the ruthenium targets and resultant films at different conditions were studied by means of field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and four-point probe. The results showed that parameters such as the average deposition rate, surface roughness, crystallisation properties and growth rate were directly related to the homogeneity of the microstructure of the ruthenium targets, but there was no correlation between the crystal orientations of the films and the targets. Moreover, the resistivity of ruthenium films was positively correlated with that of the ruthenium targets.

Growth behavior and mechanism of atomic layer deposition of Ru for replacing Cu-interconnects

The growth behavior and nucleation mechanism of Ru films on various substrates using Ru(EtCp)2 as the precursor and O2 as the reactant were studied systematically. The results show that the Ru films grow rapidly on TiN substrates with almost no incubation time. Different of the segregation and combustion mechanism reported in the previous literature, we established the adsorption and combustion mechanism of ALD-Ru on TiN substrates. SEM and XPS confirmed that the grown Ru films were polycrystalline (average grain size of 16.53 nm, negligible impurities). The Ru films annealed at 600 °C showed significantly low resistivity of 9.73 μΩ•cm, which is one of the lowest resistivities reported in the literature so far. Suppressing electron scattering at grain boundaries is crucial factor to preparing Ru films with low resistivity. The work uses a simple plasma-free technique to construct high-quality Ru films with extremely low resistivity and low impurities, making them one of the ideal candidates for replacing Cu in future ultrafine-pitch interconnects. Furthermore, the work is significant for understanding the growth behaviors and nucleation mechanisms of Ru films on different substrates.

First principles study on strain effect of hydrogen diffusion and dissolution behavior in Ruthenium

In this work, the role of three kinds of strain, such as volumetric, biaxial and shear strain, in the dissolution and diffusion of Hydrogen (H) in Ruthenium (Ru) were studied by using first-principles simulation method. It was found that under volumetric or biaxial strains, the dissolution energy of H in Ru increases with the increase of compressive strain and decreases with the increase of tensile strain. For shear strain, the effect of strain on the dissolution energy of H in Ru relies on the crystal plane to which the strain is applied. The diffusion coefficients of H in Ru are different along the c and a direction and strongly dependent on the type and value of strain. All above results indicate that, in comparison to strain-free Ru film, H aggregation and even H bubbles are more difficult to form in Ru film under compressive strain.

Electron-enhanced atomic layer deposition of Ru thin films using Ru(DMBD)(CO)3 and effect of forming gas anneal

Ruthenium (Ru) thin films were deposited utilizing electron-enhanced atomic layer deposition (EE-ALD). Sequential exposures of Ru(DMBD)(CO)3 (DMBD = 2,3-dimethylbutadiene) and low-energy electrons at ∼125 eV were used to grow the Ru films at temperatures ≤160 °C. The electrons were obtained from a hollow cathode plasma electron source that provided an electron current of ∼200 mA over a surface area of ∼4 cm2. Low-energy electrons can desorb surface ligands derived from Ru(DMBD)(CO)3, such as CO, through electron-stimulated desorption. The desorbed surface ligands leave chemically reactive sites for subsequent Ru(DMBD)(CO)3 precursor absorption. Ru EE-ALD film growth was monitored utilizing in situ spectroscopic ellipsometry (SE). The electron exposures resulted in rapid Ru film nucleation and growth. Under saturation conditions at 160 °C, the growth rate for Ru EE-ALD was 0.2 Å/cycle. The electron efficiency factor for Ru EE-ALD was ∼21 500 electrons/deposited Ru atom. There was no film growth without electron exposures. Ru growth was observed on various substrates including silicon with native oxide and titanium. Ru growth was also obtained on insulating substrates such as 400 nm thick thermal SiO2 substrates. XPS analysis measured &amp;lt;1 at. % oxygen in the deposited Ru films. XRD, x-ray reflectivity, and SE were used to characterize the Ru films before and after forming gas anneal (FGA). FGA successfully removed carbon impurities from the as-deposited Ru films. The resistivity of the Ru EE-ALD films after FGA was determined to be as low as 17 μΩ cm for a film thickness of 6.7 nm. SE measurements of the imaginary part of the pseudodielectric function, 〈ɛ2〉, were utilized to characterize the as-deposited Ru films and the high purity Ru films after FGA. The low resistivity of the Ru films after FGA was consistent with a prominent Drude absorption in the ⟨ε2⟩ spectrum at ≤1 eV. Various reactive background gases such as H2, NH3, and H2O were utilized during EE-ALD to attempt to remove the carbon from the as-deposited Ru EE-ALD films.

A Platform for Addressing Individual Magnetite Islands Grown Epitaxially on Ru(0001) and Manipulating Their Magnetic Domains.

We have grown high-quality magnetite micrometric islands on ruthenium stripes on sapphire through a combination of magnetron sputtering (Ru film), high-temperature molecular beam epitaxy (oxide islands), and optical lithography. The samples have been characterized by atomic force microscopy, Raman spectroscopy, X-ray absorption and magnetic circular dichroism in a photoemission microscope. The magnetic domains on the magnetite islands can be modified by the application of current pulses through the Ru stripes in combination with magnetic fields. The modification of the magnetic domains is explained by the Oersted field generated by the electrical current flowing through the stripes underneath the magnetite nanostructures. The fabrication method is applicable to a wide variety of rock salt and spinel oxides.

Improving the Electromigration Life of Advanced Interconnects through Graphene Capping

Since the discovery of graphene, 2D materials are establishing a rapidly growing and promising field, with great potential for diverse applications given their excellent conductivity and high transparency. In particular, graphene can isolate external chemical reactions when applied to back-end-of-line (BEOL) interconnect metals, thereby preventing the oxidation of the interconnect metals. In addition, it can improve the conductivity and breakdown current density of interconnects. However, the thermal budget remains an important problem in BEOL interconnects. We demonstrate an advanced graphene deposition method using an in-house plasma plasma-enhanced chemical vapor deposition system, which offers low thermal budget and high stability. We also optimize carbon precursors to improve the quality of graphene on Ru and Co thin films. We show the improvement of electrical conductivity, electromigration lifetime, and maximum breakdown current density after capping Ru and Co interconnects with graphene. The electromigration lifetimes of the Ru and Co interconnects increase by 4 and 4.5 times, respectively, and their maximum breakdown current density increases by 17.6 and 10.6%, respectively. The results show that capping with graphene has a high potential in BEOL applications.

Ru thin films prepared by RF magnetron sputtering with Ru targets of different microstructures

Ruthenium (Ru) exhibits excellent electrical properties at the nanoscale, and it can be used to replace Al and Cu as interconnect metals for nodes of 20 nm and below in the next generation of integrated circuits. Ru interconnects mainly exist in the form of films, and Ru targets are used as the key raw materials to produce these films. Establishing whether there is an inheritance relationship in terms of microstructure and electrical properties between these targets and the resultant films will determine whether these are important factors for improving the electrical properties of Ru films and will provide directional guidance for the preparation of Ru targets. In this work, Ru targets were prepared by vacuum hot pressing with two different Ru powders with different morphologies and particle sizes. Ru films were then deposited on SiO2/Si(100) substrates by RF magnetron sputtering at substrate temperatures ranging from room temperature (RT, about 25 °C) to 400 °C. The microstructures and electrical properties of the Ru targets and Ru films were investigated by high-resolution field-emission scanning electron microscopy, x ray diffraction, atomic force microscopy, four-probe resistivity measurements, and digital conductivity tests. The results showed that Ru targets with a more uniform microstructure had lower resistivity; furthermore, Ru films deposited by Ru targets with a more uniform microstructure were preferentially crystallized, and they also had a faster average deposition rate, a smaller average grain size, and lower surface roughness. However, no correlation was found between the crystal orientations of the Ru films and Ru targets.

Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions

Ruthenium (Ru) is a noble metal and is known to be resistant to many common chemicals and mixtures. We report in this study a controlled etching/recessing of Ru via wet processing and a combination of dry and wet process using metal-free chemical mixtures. The wet etching study was performed using both as-deposited and annealed atomic layer deposited ruthenium (Ru) films. The etching rate of Ru film in periodic acid mixtures was found to decrease substantially after being annealed at elevated temperatures (300 and 420 °C). X-ray photoelectron spectroscopy results indicated that this behavior could be explained by the formation of a thin surface ruthenium oxide layer induced by the thermal anneal. A short treatment in H2-based atmosphere at elevated temperature or in H2 plasma rendered the annealed Ru film etchable, explained by the reduction of RuOx film at the surface. The increase in surface roughness after wet etching was most likely caused by the gradual formation of oxidized Ru at the surface. Similarly, non-uniform etching of Ru was also observed for damascene Ru structure with the critical dimension ranging from ∼12 to 35 nm. An alternative approach using O2-based plasma achieved a good control of the etching (recessing) depth but also generated a thin layer of “residues” close to the interface between Ru and the liner (TiN). The results from this study have demonstrated that a short H2 plasma treatment prior to the wet process using the same chemical mixtures was able to etch the modified Ru surface layer together with the interfacial residues selectively to bulk Ru.

Size effect of resistivity due to surface roughness scattering in alternative interconnect metals: Cu, Co, Ru, and Mo

The resistivity size effect of thin films due to atomically rough surfaces is investigated using first-principles quantum transport simulations with the disorder scattering treated by the nonequilibrium mean-field approach. Within the exact muffin-tin orbital--based first-principles method, the Madelung potential of film in device structure is constructed by implementing the boundary-condition correction. Cu(001), Co(0001), Ru(0001), and Mo(001) thin films are modeled with the thickness $d=1--10$ nm. The random surface roughness is represented by an alloy model, consisting of one monolayer of ${\text{M}}_{x}{\text{Va}}_{1\ensuremath{-}x}$ and ${\text{M}}_{1\ensuremath{-}x}{\text{Va}}_{x}$ on the respective top and bottom surfaces. The results of all metal films indicate that the first-principles resistivity ${\ensuremath{\rho}}_{s}$ induced by surface roughness scattering is proportional to $1/d$. Our simulated resistivity results are consistent with the experimental measurements of epitaxial metal layers. We find that, for the same thickness, Mo films present the highest ${\ensuremath{\rho}}_{s}$, significantly larger than the other metals. The thin-film resisitivity ${\ensuremath{\rho}}_{s}$ of Co is about 1.6 times that of Cu, while Ru results is slightly higher than Cu results. For all metal films, we obtain the parameter ${\ensuremath{\gamma}}_{s}$ characterizing the intensity of surface roughness scattering as a function of $x$. Furthermore, we find the proportionality constant ${\ensuremath{\alpha}}_{s}$ versus $x$ for the mean-free path ${\ensuremath{\lambda}}_{s}={\ensuremath{\alpha}}_{s}\ifmmode\times\else\texttimes\fi{}d$ for surface roughness scattering. Our results show that at the high $x&gt;0.2, {\ensuremath{\alpha}}_{s}$ is rather close to a constant, with values of 4.5, 2.8, 2.1, and 1.0 for the respective Cu, Ru, Co, and Mo. We conclude that, compared to Co, Ru is competitive in resistivity size effect of surface roughness for an alternative to Cu interconnect for future technology nodes.

Ignition and extinction characteristics of n-alkane cool flames on a heated wall with different surface reactivity

Cool flames play essential roles in the ignition process of hydrocarbon fuels, so that understanding their dynamics is highly crucial to develop advanced engines with high thermal efficiency. There have been extensive studies to elucidate the combustion characteristics of cool flame and the low-temperature chemistry governing its kinetics. However, wall chemical effects on the cool flame ignition and extinction are still not fully clarified, although our recent related works have shown their significant impact on the cool flame ignition temperatures of DME.In this study, ignition and extinction characteristics of n-alkanes with carbon numbers from 7 to 10 are examined systematically, with particular attention paid to the effects of fuel carbon number, oxygen concentration, and surface reactivity. An experimental setup enabling the ignition and extinction of cool flames in the vicinity of a wall is newly built. The surface reactivity is controlled by depositing thin films of specific materials, namely SiO2, Fe, and Ru, on the wall surface. The cool flame ignition and extinction behaviors of each fuel on each wall are identified by measuring HCHO molecules with laser-induced fluorescence (LIF). In addition, numerical simulations assuming one-dimensional axisymmetric impinging flows with detailed gas-phase reactions are performed in order to further investigate the effect of fuel carbon number on the cool flame ignition and extinction. The results indicate that the cool flame ignition and extinction behaviors are highly dependent on the surface reactivity, showing completely different aspects according to the fuel.

Atomic Layer Deposition of Ru Thin Film Using a Newly Synthesized Precursor with Open‐Coordinated Ligands

AbstractRu films are grown on Pt, TiN, and SiO2 substrates via atomic layer deposition (ALD) using Ru(II)(η5‐C7H7O)(η5‐C7H9) as the novel Ru metalorganic precursor and O2 as the reactant. The ALD self‐limiting film growth is confirmed at the low temperature of 200 °C by manipulating the injection time and purge time of the Ru precursor and O2, and the saturated growth per cycle is 0.22 Å cy−1. It is confirmed that the combustion reaction occurs during the deposition process from the formation of the H2O and CO2 by‐products. Thin films with a low resistivity of 17–19 µΩ cm are grown at a thickness of ≈15 nm. The Ru incubation times are remarkably short at 200 °C (negligible on Pt, ≈30 cycles on TiN and SiO2), but increase with increasing temperature. The energy dispersive X‐ray mapping image of the Ru film on the pattern in which TiN is formed on SiO2 shows that the Ru film with a novel precursor has the intrinsic substrate selectivity at the deposition temperature of 300 °C. Furthermore, the substrate affects the properties of the Ru film. Particularly because Ti serves as an oxygen reservoir, a relatively large amount of RuOx is produced on the TiN substrate.