Abstract
Ruthenium targets were prepared by vacuum hot pressing of ruthenium powder with different morphologies. Ruthenium films were then deposited on a SiO2/Si(100) substrate for different times by radio frequency (RF) magnetron sputtering. The relationship in terms of the microstructure and electrical properties between the ruthenium targets and resultant films at different conditions were studied by means of field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and four-point probe. The results showed that parameters such as the average deposition rate, surface roughness, crystallisation properties and growth rate were directly related to the homogeneity of the microstructure of the ruthenium targets, but there was no correlation between the crystal orientations of the films and the targets. Moreover, the resistivity of ruthenium films was positively correlated with that of the ruthenium targets.
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