Room Temperature Substrates Research Articles

Hydrophobic/hydrophilic surfaces constructed using laser spraying: A new route

Hydrophobic/hydrophilic coatings are widely applied in healthcare, construction, and electronic devices. However, low-cost preparation of coatings is a challenge because they are often associated with complex procedures and adverse environmental impacts. Therefore, an innovative low-cost and environmentally friendly laser spraying technology was employed to fabricate hydrophobic and hydrophilic Ni coatings. The wettability of the coatings was regulated by systematically varying laser power and substrate temperature. The Ni particles presented spherical morphology, low oxidation rate and low coverage rate (4%) with a laser power of 3000 W and room temperature substrate, yielding a hydrophobic coating with a water contact angle of 125.9±17.2°. Conversely, Ni particles exhibited oblate spherical morphology, higher oxidation rate, higher coverage rate (95%) and a porous structure with a laser power of 5400 W and a substrate temperature of 700°C, resulting in a hydrophilic coating with a water contact angle of 8.4±1.2°. These findings demonstrate a novel approach for tailoring the wettability of the Ni coatings, offering new insights into the fabrication of functional coatings for various applications.

De- and Rearomatisation of Pyridine in Silylene Chemistry.

Traditional methods relying on metal-ligand cooperation for activating pyridine bonds in de- and rearomatisation are being challenged by the abundant metal-free element species as alternatives. Here, we investigated the de/re-aromatisation of pyridine facilitated by pyridylamino-functionalised silylene reactions with ketones and ketene. The reactivity outcome is highly dependent on the substituents on the ketones. By carefully tuning the steric demand of the ketone, each intermediate of the reaction sequence could be isolated. At room temperature, benzophenone and acetophenone substrates led to dearomatisation of the pyridine moiety, with the case of acetophenone showing an intermediate silaoxirane preceding dearomatisation. However, when subjected to acetone or diphenylketene, only silaoxiranes were formed without dearomatisation of the pyridine moiety. Notably, only benzophenone-derived dearomatised species demonstrated rearomatisation upon heating. Furthermore, the reduced steric bulk of the ketene facilitated further ring expansion with another equivalent of the substrate, forming sila-1,3-dioxolanes. Both steric hindrance and aromatic groups collectively influence the dearomatisation of pyridine in pyridylaminosilylene reactions.

Anion and Cation Co-Doping of NiO for Transparent Photovoltaics and Smart Window Applications

Materials engineering based on metal oxides for manipulating the solar spectrum and producing solar energy have been under intense investigation over the last years. In this work, we present NiO thin films double doped with niobium (Nb) and nitrogen (N) as cation and anion dopants (NiO:(Nb,N)) to be used as p-type layers in all oxide transparent solar cells. The films were grown by sputtering a composite Ni-Nb target on room-temperature substrates in plasma containing 50% Ar, 25% O2, and 25% N2gases. The existence of Nb and N dopants in the NiO structure was confirmed by the Energy Dispersive X-Ray and X-Ray Photoelectron Spectroscopy techniques. The nominally undoped NiO film, which was deposited by sputtering a Ni target and used as the reference film, was oxygen-rich, single-phase cubic NiO, having a visible transmittance of less than 20%. Upon double doping with Nb and N the visible transmittance of NiO:(Nb,N) film increased to 60%, which was further improved after thermal treatment to around 85%. The respective values of the direct band gap in the undoped and double-doped films were 3.28 eV and 3.73 eV just after deposition, and 3.67 eV and 3.76 eV after thermal treatment. The changes in the properties of the films such as structural disorder, direct and indirect energy band gaps, Urbach tail states, and resistivity were correlated with the incorporation of Nb and N in their structure. The thermally treated NiO:(Nb,N) film was used to form a diode with a spin-coated two-layer, mesoporous on top of a compact, TiO2 film. The NiO:(Nb,N)/TiO2heterojunction exhibited visible transparency of around 80%, showed rectifying characteristics and the diode’s parameters were deduced using the I-V method. The diode revealed photovoltaic behavior upon illumination with UV light exhibiting a short circuit current density of 0.2 mA/cm2 and open-circuit voltage of 500 mV. Improvements of the output characteristics of the NiO:(Nb,N)/TiO2 UV-photovoltaic by proper engineering of the individual layers and device processing procedures are addressed. Transparent NiO:(Nb,N) films can be potential candidates in all-oxide ultraviolet photovoltaics for tandem solar cells, smart windows, and other optoelectronic devices.

Copper tantalum nitride (CuTaN2) thin films prepared by reactive radio-frequency magnetron sputtering

RF reactive sputtering was used to deposit copper tantalum nitride (CuTaN2) films from a Cu/Ta target in an environment containing a mixture of argon and nitrogen at two different substrate temperatures: room temperature and 200 °C. The films were studied by SEM, EDS, XRD, Raman spectroscopy, spectrophotometry, and resistivity measurements. The deposition conditions significantly impacted the morphology of the films, which varied from smooth, void-free films at high nitrogen concentrations and at room temperature substrates to cauliflower-like grains with voids at low nitrogen contents and elevated substrate temperatures. Despite the target’s 1:1 Cu: Ta ratio, the stoichiometric analysis showed a lower Ta content in the deposited film. The films produced on silicon substrates were polycrystalline, whereas those deposited on glass substrates were amorphous. The band gap (0.9 eV to 1.55 eV) and film resistivity (20 kΩ-cm to 76 kΩ-cm) are strongly affected by the nitrogen fraction in the sputtering gas. Increasing the nitrogen percentage in semiconductor films results in smoother films with larger bandgaps (approximately 1.5 eV), higher resistivity, and compositions closest to those of stoichiometric CuTaN2.

Nanocrystalline Cubic Phase Scandium-Stabilized Zirconia Thin Films.

The cubic zirconia (ZrO2) is attractive for a broad range of applications. However, at room temperature, the cubic phase needs to be stabilized. The most studied stabilization method is the addition of the oxides of trivalent metals, such as Sc2O3. Another method is the stabilization of the cubic phase in nanostructures-nanopowders or nanocrystallites of pure zirconia. We studied the relationship between the size factor and the dopant concentration range for the formation and stabilization of the cubic phase in scandium-stabilized zirconia (ScSZ) films. The thin films of (ZrO2)1-x(Sc2O3)x, with x from 0 to 0.2, were deposited on room-temperature substrates by reactive direct current magnetron co-sputtering. The crystal structure of films with an average crystallite size of 85 Å was cubic at Sc2O3 content from 6.5 to 17.5 mol%, which is much broader than the range of 8-12 mol.% of the conventional deposition methods. The sputtering of ScSZ films on hot substrates resulted in a doubling of crystallite size and a decrease in the cubic phase range to 7.4-11 mol% of Sc2O3 content. This confirmed that the size of crystallites is one of the determining factors for expanding the concentration range for forming and stabilizing the cubic phase of ScSZ films.

A comparison of physical properties of dielectric/metal/dielectric film on polyethylene terephthalate and optical glass substrates

AbstractMolybdenum trioxide/indium/silver/indium/molybdenum trioxide layers were evaporated on the polyethylene terephthalate and glass substrates using thermal evaporation coating machine. In this study, we compare the electrical, optical, and topological properties of dielectric/metal/dielectric fabricated on the polyethylene terephthalate substrate and glass substrate. In this way, the influence of dielectric and metal thicknesses on the electroptical behavior and topological properties of the transparent conductive film are studied. Furthermore, the influence of the substrate temperature on the physical properties of prepared thin films is investigated. The results show that by increasing molybdenum trioxide film thickness, the sheet resistance increases. We find that the prepared thin films on the glass substrate has high optical transmittance with respect to its on the polyethylene terephthalate substrate. We also find that by increasing the substrate temperature, figure of merit decreases. It means that the maximum figure of merit is achieved at the room substrate temperature.

Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity

Copper-nitride (Cu3N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar light absorber in solar cells. In this communication, polycrystalline covalent Cu3N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu3N thin film layers were studied by UV-MIR (0.2–40 μm) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu3N films were also investigated by focused ion beam scanning electron microscopy and both FTIR and Raman spectroscopies. The less dense layer was found to have a value of the static refractive index of 2.304, and the denser film had a value of 2.496. The iso-absorption gap, E04, varied between approximately 1.3 and 1.8 eV and could be considered suitable as a solar light absorber.

Additive Manufacturing of Poly(phenylene Sulfide) Aerogels via Simultaneous Material Extrusion and Thermally Induced Phase Separation.

Additive manufacturing (AM) of aerogels increases the achievable geometric complexity, and affords fabrication of hierarchically porous structures. In this work, a custom heated material extrusion (MEX) device prints aerogels of poly(phenylene sulfide) (PPS), an engineering thermoplastic, via in situ thermally induced phase separation (TIPS). First, pre-prepared solid gel inks are dissolved at high temperatures in the heated extruder barrel to form a homogeneous polymer solution. Solutions are then extruded onto a room-temperature substrate, where printed roads maintain their bead shape and rapidly solidify via TIPS, thus enabling layer-wise MEX AM. Printed gels are converted to aerogels via postprocessing solvent exchange and freeze-drying. This work explores the effect of ink composition on printed aerogel morphology and thermomechanical properties. Scanning electron microscopy micrographs reveal complex hierarchical microstructures that are compositionally dependent. Printed aerogels demonstrate tailorable porosities (50.0-74.8%) and densities (0.345-0.684g cm-3), which align well with cast aerogel analogs. Differential scanning calorimetry thermograms indicate printed aerogels are highly crystalline (≈43%), suggesting that printing does not inhibit the solidification process occurring during TIPS (polymer crystallization). Uniaxial compression testing reveals that compositionally dependent microstructure governs aerogel mechanical behavior, with compressive moduli ranging from 33.0 to 106.5MPa.

Ion-beam-assisted growth of cesium-antimonide photocathodes

We report on the novel use of a Cs+ ion gun for an ion-beam-assisted molecular-beam-epitaxy (IBA-MBE) method to sequentially deposit Cs-Sb cathodes on room temperature substrates as opposed to the standard technique of thermal evaporation on elevated-temperature substrates. The details of the ultrahigh-vacuum chamber, the Cs+ ion source, and the growth technique are elaborated. The final quantum efficiency (QE) is reasonably good for Cs-Sb cathodes grown on two different substrates—Si (100) and strontium titanate—and is comparable to the QE of cathodes grown using thermal sources. This suggests that IBA-MBE could be a viable alternative to grow alkali-antimonides without substrate heating, paving the way for the growth of epitaxial alkali-antimonides in a more reproducible fashion, which may help improve the efficiency of photon detectors and accelerator applications that use alkali-antimonides as electron sources.

Effects of spin-coating speed and precursor concentration in Formamidinium-based layered perovskite films

The effects of precursor solution concentration, spin coating speed and substrate temperature on the crystallinity and optical properties of (BA)2FA2Pb3I10 films are comparatively investigated. On substrates at room temperature or at 110 °C, two-dimensional (2D) perovskite films and solar cells using (BA)2(FA)n−1PbnI3n+1 (n = 3 nominally), with the same molar ratio of components, are fabricated with adding thiourea in the precursor solution. The film fabrication procedure includes two groups: one is with same concentration of 0.25 mol/L (M) based on PbI2 but various spin-casting speeds from 1000 rpm to 6000 rpm; the other is with same spin-coating speed of 4000 rpm but with various concentrations from 0.1 M to 1 M. We find that optical properties and film morphologies (including domain size and crystal orientation) are not sensitive to the spin-casting speed; while the concentration of precursor solution but not substrate temperature had significant effects on the crystalline orientation and domain size, namely, higher concentration of solution results in more preferential out of plane alignment with respect to the substrate and larger crystalline domain size. Device from the 0.25 M solution spin-casted at 4000 rpm on room temperature substrate achieves the best power conversion efficiency (PCE) of 7.5% without J-V hysteresis. Current work demonstrates the highest PCE reported for mixed BA and FA based 2D perovskite solar cells with n < 5, as well as suggests the robustness of (BA)2FA2Pb3I10 as an active material in preparing solar cells.

Niobium-doped NiO as p-type nanostructured layer for transparent photovoltaics

Niobium-doped nickel oxide (NiO:Nb) thin films were investigated as p-type layer for all oxide transparent solar cells. The NiO:Nb films were grown by sputtering on room-temperature substrates in plasma containing 50% Ar and 50% O2 gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, exhibiting transmittance of less than 20%. Upon doping with Nb, the film remained p-type, the hole concentration increased from 4.3 × 1018 cm−3 to 1.2 × 1019 cm−3 but the optical properties remained almost the same with the undoped film. The changes in the properties of the films such as structural disorder, energy band-gap, Urbach states and resistivity were correlated with the incorporation of Nb in their structure. Improvement of the optical properties was achieved by thermal treatment at 300 °C. The visible transmittance increased to around 50% and the films showed a direct band-gap of 3.65–3.71 eV depending on the amount of Nb in the Ni-O structure. The optimum p-NiO:Nb film was used to form a diode with a spin-coated, mesoporous on top of a compact, TiO2 film. The p-NiO:Nb/n-TiO2 heterojunction became transparent after thermal treatment, showing rectifying characteristics. The diode showed photovoltaic behavior upon illumination with ultraviolet light exhibiting short-circuit current density 1.5 μA/cm2 and open-circuit voltage 200 mV. Transparent NiO:Nb films can be realized for all-oxide ultraviolet photovoltaics, tandem solar cells, solar-blind photodetectors and other optoelectronic devices.

Room-Temperature Self-Healing Conductive Elastomers for Modular Assembly as a Microfluidic Electrochemical Biosensing Platform for the Detection of Colorectal Cancer Exosomes.

Modular components for rapid assembly of microfluidics must put extra effort into solving leakage and alignment problems between individual modules. Here, we demonstrate a conductive elastomer with self-healing properties and propose a modular microfluidic component configuration system that utilizes self-healing without needing external interfaces as an alternative to the traditional chip form. Specifically, dual dynamic covalent bond crosslinks (imine and borate ester bonds) established between Polyurethane (PU) and 2-Formylbenzeneboronic acid (2-FPBA) are the key to a hard room-temperature self-healing elastomeric substrate PP (PU/2-FPBA). An MG (MXene/GO) conductive network with stable layer spacing (Al-O bonds) obtained from MXene and graphene oxide (GO) by in situ reduction of metals confers photothermal conductivity to PP. One-step liquid molding obtained a standardized modular component library of puzzle shapes from PP and MGPP (MG/PP). The exosomes were used to validate the performance of the constructed microfluidic electrochemical biosensing platform. The device has a wide detection range (50-105 particles/μL) and a low limit of detection (LOD) (42 particles/μL) (S/N = 3), providing a disposable, reusable, cost-effective, and rapid analysis platform for quantitative detection of colorectal cancer exosomes. In addition, to our knowledge, this is the first exploration of self-healing conductive elastomers for a modular microfluidic electrochemical biosensing platform.

Energy-band-structure calculation by below-band-gap spectrophotometry in thin layers of non-crystalline semiconductors: A case study of unhydrogenated [formula omitted]-Si

We have in depth analyzed the refractive-index behavior and optical absorption of below-band-gap light, in order to calculate the basic parameters of the energy-band structure of thin layers of non-crystalline semiconductors. By carrying out a semi-empirical determination of the influence of the finite (non-zero) width of the valence and conduction electronic bands, we find the dependence of the index of refraction upon the photon energy, n(E), which goes just one order beyond the Wemple–DiDomenico two-level single-oscillator expression, and we simultaneously obtain the spectral dependence of the absorption coefficient, α(E). By model fitting the measured normal-incidence transmittance spectrum, we demonstrate that with a highly-sensitive double-beam spectrophotometer, it can be accurately determined the energy distance, EM,Sol, between the corresponding ‘centers of mass’ of the bonding and anti-bonding electronic bands, and also a reasonable estimate of the so-called effective width, Δeff, of both valence and conduction bands. We have used this devised optical approach with a series of uniform and non-uniform thin layers of unhydrogenated fully a-Si, grown by RF-magnetron-sputtering deposition, onto room-temperature transparent glass substrates. The advantages of our novel approach are mainly due to the additional attention paid to the roles of the weak-absorption Urbach tail and the thickness non-uniformity of the studied a-Si films. We have also used a universal normal-incidence transmission expression reported by the authors in an earlier paper, which can be applied even to strongly-wedge-shaped semiconductor layers. Together with the use of the improved Solomon formula for the normal optical dispersion of the refractive index, the complete approach with all its elements constitutes the main novelty of the present paper, in comparison with other existing works.

Effect of the initial substrate temperature on heat transfer and related phenomena in austenitic stainless steel parts fabricated by additive manufacturing using direct energy deposition

In this study, the effect of preheating a AISI 304 steel substrate to 300 °C, compared to a room-temperature substrate, just before direct energy deposition (DED) additive manufacturing of a AISI 316 L steel deposit in terms of absorptivity of the laser beam, heat transfer, microstructure, hardness and residual stress. The samples were thermally isolated using an alumina cup. Using direct energy deposition for 20 and 40 layers of steel, it was found absorptivities of 18% and 16%, respectively, in room temperature (RT) experiments. At high temperatures (HT, 300 °C) the net absorptivity is almost zero because of convective and radiative cooling. The estimated heat transfer coefficients are approximately 1.0 and 0.4 Wm−2K−1, for RT and HT respectively. The microstructure and hardness obtained under each condition (RT or HT) for 20 or 40 layers, were quite similar. The microstructures were composed of austenitic grains with a Vickers hardness values ranging from 170 to 220 HV. The measured residual stresses were quite low for additive manufacturing of austenitic stainless steel, ranging from 11 to −22 MPa for RT and from 37 to −17 MPa for HT.

Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO2 Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition.

Scandium (Sc) and yttrium (Y) co-doped ZrO2 (ScYSZ) thin films were prepared on a SiO2-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures ( from 0.01 Pa to 10 Pa and substrate temperatures (Ts) from 25 °C to 800 °C were investigated. X-ray diffraction (XRD) patterns results showed that amorphous ScYSZ thin films were formed at room substrate temperature while cubic polycrystalline thin films were obtained at higher substrate temperatures (Ts = 200 °C, 400 °C, 600 °C, 800 °C). Raman spectra revealed a distinct Raman shift at around 600 cm−1 supporting a cubic phase. However, a transition from cubic to tetragonal phase can be observed with increasing oxygen partial pressure. Photoemission spectroscopy (PES) spectra suggested supporting analysis that more oxygen vacancies in the lattice can be observed for samples deposited at lower oxygen partial pressures resulting in a cubic structure with higher dopant cation binding energies as compared to the tetragonal structure observed at higher oxygen partial pressure. On the other hand, dense morphologies can be obtained at lower (0.01 Pa and 0.1 Pa) while more porous morphologies can be obtained at higher (1.0 Pa and 10 Pa).

Optical Characterization of H-Free a-Si Layers Grown by rf-Magnetron Sputtering by Inverse Synthesis Using Matlab: Tauc–Lorentz–Urbach Parameterization

Several, nearly-1-µm-thick, pure, unhydrogenated amorphous-silicon (a-Si) thin layers were grown at high rates by non-equilibrium rf-magnetron Ar-plasma sputtering (RFMS) onto room-temperature low-cost glass substrates. A new approach is employed for the optical characterization of the thin-layer samples, which is based on some new formulae for the normal-incidence transmission of such a samples and on the adoption of the inverse-synthesis method, by using a devised Matlab GUI environment. The so-far existing limiting value of the thickness-non-uniformity parameter, Δd, when optically characterizing wedge-shaped layers, has been suppressed with the introduction of the appropriate corrections in the expression of transmittance. The optical responses of the H-free RFMS-a-Si thin films investigated, were successfully parameterized using a single, Kramers–Krönig (KK)-consistent, Tauc–Lorentz oscillator model, with the inclusion in the model of the Urbach tail (TLUC), in the present case of non-hydrogenated a-Si films. We have also employed the Wemple–DiDomenico (WDD) single-oscillator model to calculate the two WDD dispersion parameters, dispersion energy, Ed, and oscillator energy, Eso. The amorphous-to-crystalline mass-density ratio in the expression for Ed suggested by Wemple and DiDomenico is the key factor in understanding the refractive index behavior of the a-Si layers under study. The value of the porosity for the specific rf-magnetron sputtering deposition conditions employed in this work, with an Ar-pressure of ~4.4 Pa, is found to be approximately 21%. Additionally, it must be concluded that the adopted TLUC parameterization is highly accurate for the evaluation of the UV/visible/NIR transmittance measurements, on the H-free a-Si investigated. Finally, the performed experiments are needed to have more confidence of quick and accurate optical-characterizations techniques, in order to find new applications of a-Si layers in optics and optoelectronics.

Temperature dependence of near-field radiative heat transfer above room temperature

Stefan-Boltzmann's law indicates that far-field blackbody radiation scales at the fourth power of temperature. The temperature dependence of radiative heat transfer in the near field is expected to be very different due to the contribution of evanescent waves. In this work, we experimentally observe such deviation on the radiative thermal conductance by bringing a hot micrometric sphere in the near-field of a room-temperature planar substrate, down to a separation distance of few tens of nanometers. The influence of materials is assessed by using either SiO2 or graphite spheres, and SiO2, graphite and InSb substrates. Temperature differences as large as 900 K are imposed. A maximum near-field radiative thermal conductance of about 70 nW K−1 is found for a graphite-graphite configuration. The experimental results demonstrate that the temperature exponent weakens in the near field, ranging from 2.2 to 4.1, depending on the gap distance and the materials. These results have broad consequences, in particular on the design of high-temperature nanoscale radiative energy devices.

Low-Temperature Deposition of Transparent Conducting Films Applied to Flexible Electrochromic Devices.

Here, we compare two different transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and indium zinc tin oxide (IZTO), fabricated as transparent conducting films using processes that require different temperatures. ITO and IZTO films were prepared at 230 °C and at room temperature, respectively, on glass and polyethylene terephthalate (PET) substrates using reactive magnetron sputtering. Electrochromic WO3 films deposited on ITO-based and IZTO-based ECDs using vacuum cathodic arc plasma (CAP) were investigated. IZTO-based ECDs have higher optical transmittance modulation, ΔT = 63% [from Tbleaching (90.01%) to Tcoloration (28.51%)], than ITO-based ECDs, ΔT = 59%. ECDs consisted of a working electrochromic electrode (WO3/IZTO/PET) and a counter-electrode (Pt mesh) in a 0.2 M LiClO4/perchlorate (LiClO4/PC) liquid electrolyte solution with an active area of 3 cm × 4 cm a calculated bleaching time tc of 21.01 s and a coloration time tb of 4.7 s with varying potential from −1.3 V (coloration potential, Vc) to 0.3 V (bleaching potential, Vb).

Contactless and spatially structured cooling by directing thermal radiation

In recent years, radiative cooling has become a topic of considerable interest for applications in the context of thermal building management and energy saving. The idea to direct thermal radiation in a controlled way to achieve contactless sample cooling for laboratory applications, however, is scarcely explored. Here, we present an approach to obtain spatially structured radiative cooling. By using an elliptical mirror, we are able to enhance the view factor of radiative heat transfer between a room temperature substrate and a cold temperature landscape by a factor of 92. A temperature pattern and confined thermal gradients with a slope of ~ 0.2 °C/mm are created. The experimental applicability of this spatially structured cooling approach is demonstrated by contactless supercooling of hexadecane in a home-built microfluidic sample. This novel concept for structured cooling yields numerous applications in science and engineering as it provides a means of controlled temperature manipulation with minimal physical disturbance.

Room Temperature Direct Electron Beam Lithography in a Condensed Copper Carboxylate.

High-resolution metallic nanostructures can be fabricated with multistep processes, such as electron beam lithography or ice lithography. The gas-assisted direct-write technique known as focused electron beam induced deposition (FEBID) is more versatile than the other candidates. However, it suffers from low throughput. This work presents the combined approach of FEBID and the above-mentioned lithography techniques: direct electron beam lithography (D-EBL). A low-volatility copper precursor is locally condensed onto a room temperature substrate and acts as a positive tone resist. A focused electron beam then directly irradiates the desired patterns, leading to local molecule dissociation. By rinsing or sublimation, the non-irradiated precursor is removed, leaving copper-containing structures. Deposits were formed with drastically enhanced growth rates than FEBID, and their composition was found to be comparable to gas-assisted FEBID structures. The influence of electron scattering within the substrate as well as implementing a post-purification protocol were studied. The latter led to the agglomeration of high-purity copper crystals. We present this as a new approach to electron beam-induced fabrication of metallic nanostructures without the need for cryogenic or hot substrates. D-EBL promises fast and easy fabrication results.