Conductive Bragg Reflectors SiO2/TiO2/ITO thin films have been grown on glass substrate at room temperature by thermal evaporation and then were annealed in annealing pressure 600 mbar at different temperatures ranging from 250 to 550 °C for 30 min. X ray diffraction results suggested that all films have polycrystalline structure and the peak intensities are increased by increasing annealing temperature. Scanning electron microscopy images showed that crystallinity and homogeneity of films depend on the annealing temperature. Residual Stress, Strain and Dislocation density are decreased by increasing annealing temperature. Conductive DBR films prepared at 550 °C have a very smooth surface with an RMS roughness of 0.25 nm. For films prepared at 550 °C, high reflectance (94.4%) over the visible wavelength region of spectrum (at wavelength 591 nm) was obtained. Increasing annealing temperature (Ta) from 250 to 450 °C reduced resistivity of conductive DBR thin films from (17.8 ×10−4 Ω cm) to (3.8 ×10−4 Ω cm). Further increase of temperature up to 550 °C had no effect on the resistivity.