The ability to grow Si in ribbon form offers the potential for greatly reducing the cost of solar cells compared with the present technology that is based on cutting large-cross-section ingots with the accompanying material waste. In the recent past, the edge- defined-growth (EFG) process technology has received much attention, and progress was made in growing 1-in.-wide ribbons of significant length. However, this material is polycrystalline over most of its length. In addition, the possible inclusion of the die materials (carbon) and associated contaminants leads to difficulties in controlling the minority-carrier lifetine in the ribbon. Thus, because of lattice defects (e.g., dislocations, grain boundaries, andcontaminants), problems are anticipated in obtaining a high yield of efficient solar cells by direct diffusion into such ribbon material produced with the present technology. This paper reports on a study of means of generally improving the quality of solar cell devices obtained by using thin epitaxial layers deposited on such material. The program encompasses analytical studies aimed at relating the defects to device performance, and the fabrication of solar cells on a comparative basis (diffusio versus epitaxial growth on crystals of similar quality) to establish the improvement which is obtained. Indeed, the program described in this report demonstrated substantially improved performance with ≈50-μm-thick epitaxial layers compared with those made by direct diffusion. The difference in performance was analyzed in detail to yield significant new insight into the factors controlling the solar cell efficiency when such devices are fabricated in large- grained polycrystalline silicon ribbon.
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