RF Switch Research Articles

Vertical GaN/InGaN/GaN heterostructure tunnel field-effect transistor: DC and analog/RF performance

This work reports an [Formula: see text]-type GaN/InGaN/GaN heterostructure vertical double-gate tunnel field-effect transistor (VTFET) using exhaustive calibrated simulation for the first time. Investigation has been done for the proposed structure by including a polarization layer of InGaN near the source-channel junction. From the analysis, it has been observed that after the introduction of polarization layer near the source-channel interface, drain current increases due to the increase in charge concentration (2DEG) near the interface due to inter-band tunneling. Value of 2DEG concentration achieved post introducing the polarization layer is [Formula: see text] [Formula: see text]. The reported structure is optimized using parametric sweep optimization technique. Here, a detailed dc and analog/RF performance estimation has been done for the structure with heterostructure. In-depth sensitivity analysis has been done for the structure with the polarization layer. It is reported that the structure with HfO2 as the dielectric material with [Formula: see text] of 2 nm and with gate metal work function of 5.8 eV gives the optimum performance at 300 K. Further, it demonstrates high cutoff frequency ([Formula: see text] and gain bandwidth product (GBW) as 1000 GHz and 300 GHz, respectively. Hence, the reported structure is a better alternative for high-power steep switching analog and RF applications.

A Novel Reconfigurable Intelligent Surface for Wide-Angle Passive Beamforming

A design for a highly reconfigurable intelligent surface (RIS) that can provide 3-D passive reflective beamforming suitable for sub-6-GHz frequency bands is proposed. The RIS is based on a novel double-layer structure consisting of independently controllable and highly reconfigurable elements on top of a ground plane. The novelty of the structure is the use of reconfigurable RIS elements, whose size is of the order of a wavelength, which are optimized to function over wide incident and reflected angles. In addition, the individual elements each have four RF switches, in a 5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 5 subelement structure, providing 16 different reflective phases, from 0° to 360° relative to the incident waves. To quantify the performance of RIS, the performance metric of phase entropy is defined and it is also used as an objective function for optimizing the design. An efficient analytical method for predicting the reflected waves from the RIS elements, as well as phase entropy, is also provided. For verification, a prototype of a 4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 4-element RIS, with a total size of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.32\,\,\textrm {m}\,\,\times \,\,0.34\,\,\textrm {m}$ </tex-math></inline-formula> , is fabricated and an experimental setup for measuring the scattered pattern is described. It is shown that waves incident from various angles can be passively beam steered to any angle within 0°–360° azimuth and ±50° elevation angles. The high reconfigurability to manipulate incident waves makes the proposed RIS a promising surface for use in future high-capacity communication systems.

High frequency application of ultrafine submicron FeBP amorphous soft magnetic composites

A novel amorphous soft magnetic composites (ASMCs) for hundreds MHz frequency applications have been prepared under the hot-pressing molding by ultrafine submicron FeBP amorphous powders. These ultrafine submicron FeBP amorphous particles were synthesized with the NaBH4 chemical reduction method and the particles size was regulated by the drop rate of the reducing agent. The morphology, microstructure, elemental composition and high-frequency magnetic properties of the amorphous soft magnetic composites was systematically investigated. The particle sizes of FeBP amorphous powders are distributed in 600–900 nm which gradually increase with the decrease of the drop rate of the NaBH4 aqueous solution. Meanwhile, the Fe element content and saturation magnetization strength of the amorphous powder increase and the coercivity gradually decreases. The corresponded ASMCs also appear a commensurate permeability in the range of 6–9 responding to the GHz high frequency range with the lowest loss tangent only 0.20 and 0.44 at 500 MHZ and 1 GHz, respectively. Such ultrafine amorphous soft magnetic composites have enormous potential for high frequency applications in wide band gap semiconductor switching power supplies, RF inductors and chips.

Design and fabrication of reconfigurable, broadband and high gain complementary split-ring resonator microstrip-based radiating structure for 5G and WiMAX applications

Frequency reconfigurability and high gain are the two essential parameters of any antenna design, and these two parameters are successfully achieved in the antenna presented in this manuscript. The two RF switching diodes are used to alter the charge distribution over the patch region to achieve frequency reconfigurability. The fabrication carried out using the FR-4 material keeps the antenna cost low. The performance of the presented work is analyzed in terms of reflectance coefficient, total gain, bandwidth, directivity, fractional bandwidth, and normalized directivity. The novelty in the presented work is the filling of copper and liquid-based split-ring resonators in superstrate regions over the patch area to identify the performance improvement. The presented design provides the maximum frequency reconfigurability of 550 MHz, a minimum reflectance coefficient of −44.821 dB, and a maximum bandwidth of 462 MHz. The addition of superstrate layers will enhance the gain and maximum gain of 3.49 dB. The presented novel work will provide the multiband behavior which targets the different wireless communication applications like 5G communication and WiMAX.

On origin of resistive and capacitive contributions to impedance of memory states in Cu/TiO2/Pt RRAM devices by impedance spectroscopy

The resistive switching phenomenon is attributed to local formation and rupture of conductive filaments (CF), however some aspects of the switching mechanism still need wider consensus. The origin of resistance contribution to low resistance state (LRS) and high resistance state (HRS) is although well known, the origin of capacitive contribution to the memory state of resistive random access memory device (RRAM) is ambiguous. Here we report impedance spectroscopic studies carried on Cu/TiO2/Pt devices to address the origin of resistive and capacitive contribution, where the effect of DC bias voltage, reset stop voltage and set compliance current on the impedance of RRAM memory states were investigated in detail. The studies revealed that the capacitive contribution was dominated by the surrounding TiO2 bulk and contrary to existing knowledge, gap formed owing to ruptured CF has negligible role. These studies also reaffirmed the origin of the resistive contribution to the HRS and LRS state, which was dictated by the ruptured gap and connected CF, respectively. Results of this study may be significant towards improving the switching time and operating frequency performance of futuristic memory, RF switch and neuromorphic computing applications of RRAM devices.

High gain frequency reconfigurable multifunctional antenna for modern wireless and mobile communication systems

This article proposes a novel multifunctional wideband reconfigurable antenna with a frequency selective surface (FSS) reflector to improve gain across all operating bands. Initially, a wideband trapezoidal monopole antenna with a 138% impedance bandwidth (1.53–8.45 GHz) on a FR-4 substrate with a thickness of 0.80 mm and an area of 51 × 56 mm2 was designed. In order to achieve multifunctionality, two inverted L structures with two rectangular slots were introduced at the ground plane. Each slot functions as a filter, producing various resonating bands. To obtain the desired resonating frequency bands, the effective length of the slot was changed by strategically placing RF switching element PIN diodes. The proposed reconfigurable antenna can switch between 10 different frequency bands. To improve the gain of the proposed reconfigurable antenna, a novel FSS reflector with a 5 × 5 array of elements is placed 1.01λ (34.54 mm) below the proposed antenna. The application of the FSS results in a 3–6 dBi improvement in antenna gain, not only for the wideband range, but also for all operating frequency bands. Over the entire operating bandwidth, the radiation efficiency ranges from 93% to 75%. For GPS, RADAR, LTE42/43, WLAN, WiMAX, STM-Link, and UMTS applications, the proposed antenna operates in a wideband state, three single band states, four dual band states, and three tri band states. This work provides more antenna functionality at a lower cost, as well as significantly reduced size and space requirements. The proposed antenna can be easily integrated into portable electronic devices for a variety of wireless applications due to its broad switching capability and unique feasibility.

DC Signature of Snap-through Bistability in Carbon Nanotube Mechanical Resonators.

Bistable arched beams exhibiting Euler-Bernoulli snap-through buckling are widely investigated as promising candidates for various potential applications, such as memory devices, energy harvesters, sensors, and actuators. Recently, we reported the realization of a buckled suspended carbon nanotube (CNT) based bistable resonator, which exhibits a unique three-dimensional snap-through transition and an extremely large change in frequency as a result. In this article, we address a unique characteristic of these devices in which a significant change in the DC conductance is also observed at the mechanical snap-through transition. Through the analysis of this phenomenon, we arrive at several important conclusions: we find that the common approach to determining CNT vibrational resonance amplitude is inaccurate; we find evidence that latching phenomena should be easily realizable, relevant for RF switches and nonvolatile memory devices. Finally, we present evidence for possible inner shell sliding, which is relevant for understanding interlayer coupling and moiré pattern research.

Modeling Electrostatics and Low-Field Electron Mobility of GaN FinFETs

Gallium nitride (GaN) high electron mobility transistors (HEMTs) are currently being used for RF applications due to the intrinsically high saturation velocity and high mobility of GaN compared to both Silicon and SiC. However, GaN HEMTs suffer from a variety of issues, such as a lack of E-Mode operation and non-linearity, which impacts their widespread adoption in the RF and low-voltage switching devices. Recent advances in material processing, high aspect ratio epitaxial growth, and etching methods has led to an increased interest in 3-D GaN nanostructures such as AlGaN/GaN MIS FinFET wherein a layer of Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> surrounds the AlGaN/GaN fin. Theoretical calculations of transport properties of AlGaN/GaN FinFETs are scarce compared to those of their planar HEMT counterparts. This work employs for the first time self-consistent solution of the coupled 1-D Boltzmann – 2-D Schrödinger – 3-D Poisson problem to yield the channel electrostatics and the transport characteristics of AlGaN/GaN MIS FinFETs. The low field electron mobility in the quasi-1-D region is calculated, using 1-D ensemble Monte Carlo method, as a function of temperature and fin width. Acoustic, piezoelectric and polar optical phonon scattering, and interface roughness scattering at the AlGaN/GaN interface, are incorporated in the theoretical model. Our simulations suggest that E-mode FinFETs can be achieved in ultranarrow fin channels. As suggested experimentally, we confirm via simulation experiments that strain relaxation increases the sheet resistance of the channel.

A 24–29.5-GHz Highly Linear Phased-Array Transceiver Front-End in 65-nm CMOS Supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G New Radio

This article presents a four-element phased-array transceiver (TRX) front-end for millimeter-wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and amplitude-to-amplitude (AM–AM) distortions on error vector magnitude (EVM) are detailed. A three-stage highly linear wideband class-AB power amplifier (PA) is described, mitigating AM–PM and AM–AM distortions without degrading other performances. A matching network embedded transmitting/receiving (T/R) switch is proposed to support time division duplex (TDD). With the proposed technique, RF switch insertion losses are reduced in both transmitter (TX) and receiving (RX) modes. In each TRX element, phase and gain controls are achieved by a 6-bit vector-modulated phase shifter (VMPS) with a phase tuning range of 360° and a 6-bit attenuator with a gain tuning range of 31.5 dB, respectively. Fabricated in 65-nm bulk CMOS, the proposed packaged TRX demonstrates the measured peak gains of 25.5/14.2 dB with the gain ripples of less than 2.5/1.9 dB across 24–29.5 GHz in the TX/RX mode. The measured peak <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\text {1 dB}}$ </tex-math></inline-formula> is 17.6 dBm with a power added efficiency (PAE) of 20.4%. The measured minimum noise figure (NF) is 4.3 dB. The TRX achieves an output power of 7.9–8.9 dBm and an EVM of −25 dB with 8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 100-MHz 5G NR frequency range 2 (FR2) orthogonal frequency division multiplexing (OFDM) 64-quadrature amplitude modulation (QAM) signals across 24–29.5 GHz, covering 3rd generation partnership project (3GPP) 5G NR FR2 operating bands (i.e., n257, n258, and n261) around 26 GHz.

An Analysis and Design Method for Wide Range Reconfigurable Filter Bank Using Parallel Inductive Switch Network

In this brief, an analysis and design method for wide range reconfigurable filter bank using parallel inductive switch network (PISN) is proposed. The proposed lumped element filter bank consists of three standalone reconfigurable filters which are directly connected together to the common input/output ports without using series single-pole triple-throw (SP3T) RF switches. Instead, inductive PIN diodes are placed parallel to resonators for switching between three frequency bands. An equivalent and iterative method are proposed to analyze and eliminate impedance loading effects between multiple filter channels for the first time. To verify the proposed design and analysis, a reconfigurable bandpass filter bank was designed and fabricated. The measurement shows that a wide frequency tuning range (FTR) of 94–417 MHz (more than 2 octaves) with less than 5 dB insertion loss and more than 40 dB of suppression in adjacent bands is achieved. Detailed theory and measurement are given with good agreement.

Low actuation voltage cantilever-type RF-MEMS shunt switches for 5G applications

Conventional electrostatic RF-MEMS shunt switches suffer from high actuation voltages, owing to their membrane-type structures with large spring constant. Alternatively, in this work, to alleviate the inherent high actuation voltage requirements of electrostatic shunt switches, we propose a fixed-free cantilever-type RF switch in a shunt configuration and systematically optimize it both from electromechanical and RF performance aspects. The proposed switches are carefully modeled via comprehensive finite element simulations, performed using commercially available solvers i.e., COMSOL and HFSS. The electromechanical response of the proposed switches is optimized by studying three different cantilever designs, where low actuation voltage and switching time of 9.1 V and 90 μs are achieved, respectively. To validate the mechanical reliability of the designed switches, the maximum stress values in switch structures during operation were restricted well below the yield strength of the switch beam. Furthermore, RF performance of the designed switches was optimized for mm-wave regime by maximizing the ratio of switch capacitance in OFF-state and ON-state. The cantilever-type RF-MEMS shunt switch design exhibits an insertion loss as low as −0.065 dB and RF isolation as high as −40 dB, at 30 GHz, demonstrating feasibility for 5G mobile applications.

(Invited) Lithium-Based Components Integrated on Silicon: Disruptive, Promising and Credible Solutions for 5G & Beyond

Following a trend similar to Moore’s low which prevailed for decades for active circuits, RF integrated passive components have reinvented themselves over the years in order to sustain continuous performance and size requirements. Their roadmap is still unrolling, thanks to a wide variety of new materials integration: high-k dielectrics for capacitors[1] ,[2] , magnetic material for inductors [3], aluminium nitride[4] (now scandium doped) for RF filters, or more recently phase-change materials for RF switches[5].In the last few years, RF integrated passives built upon Lithium-based materials have attracted strong attention because of their state-of-the-art performances and their direct integration on silicon wafers. Lithium-based piezoelectric materials are used since 40 years by the SAW filters industry, which processes LiTaO3 (LTO) or LiNbO3 (LNO) bulk wafers in dedicated fabs. Recently, however, layered SAW devices exploiting thin films of these materials directly on a silicon wafer have exhibited dramatically improved performances. These devices leverage the latest developments in single crystal Li-based layer transfer, or in deposition techniques (PVD, ALD[6], Pulse-Laser-Deposition, ...) of epitaxial, textured, or amorphous Li-based thin films, all of which achievable in industrial grade semiconductor equipments.In this presentation, we will give an overview of the potential of integrating lithium-based materials on silicon through different examples of promising RF components for 5G. First, we will show how the availability of Li-based Piezoelectric-on-Insulator (POI) wafers[7] is a game changer for 5G filtering. We will present very promising perspectives regarding the development of LNO-based Bulk Acoustics Wave filters (BAW)[8] ,[9],[10] which aim at extending the application space of POI SAW filters towards the upper 5G bands and even Wi-Fi 6E [5-7 GHz] . Different examples of Li-based materials integrations will be given3,4,5,[11] . Secondly, we will discuss the potential of a new type of Li-based hybrid micro supercapacitors integrated on silicon. LiPON thin films offer a unique combination of dual properties, being both a dielectric and an electrolyte[12]. Their integration on silicon is not only bringing potentially ultra-high capacitance densities, but also local on-chip energy storage for 5G components, opening a new paradigm in use of the device in a system[13] ,[14] . After that, we will open the horizon of the potential of Li-based materials integration towards other types of RF devices, like RF switchs, and elaborate on their synergy with Li-transistors for neuromorphic applications[15] and with more conventional lithium microbatteries integrated on silicon[16]. Finally, the integration of Lithium in a silicon industrial environment and the remaining challenges will be discussed. The similarities and discrepancies of the different Li-based processes will be analyzed as well as the compatibility with a silicon CMOS and/or microsystem fab, and the potential for wafers size scaling. Risks like sensitivity to humidity and potential Li contamination will be outlined with some relevant preventive protocols in order to make the Lithium integration on silicon a real and credible disruptive solution regarding 5G challenges. [1] F. Roozeboom, et al. ECS 2007 [2] M. Bousquet et al., ECAPD 2014 [3] J. P. Michel et al., IEEE Trans. Magnetics 55, n°7, pp. 1-7 (2019) » [4] A. Reinhardt et al., IFCS 2011 [5] A. Leon et al., IEEE Trans. Microwave Theory and Techniques, vol. 68, n°1, pp. 60-73 (2020)” [6] M. Bedjaoui et al. ECS Meeting (October 10-14, 2021). [7] E. Butaud et al. IEDM 2020 [8] M. Bousquet et al., Proc. IEEE International Ultrasonics Symposium 2019. [9] M. Bousquet et al., Proc. IEEE International Ultrasonics Symposium 2020. [10] A. Reinhardt et al., Proc. Joint Conference of EFTF & IFCS 2021 [11] L. Sauze et al, Thin solid films, 726, may 2021 [12] L. Le Van-Jodin et al, Solid State ionic, 2013 [13] V. Sallaz et al, Journal of Power Source, 2020 [14] V. Sallaz et al. submitted to ECS 2021 [15] N-A Ngyuen et al,” submitted to ECS 2021 [16] S. Oukassi et al, IEDM 2019

A High Performance 0.18 μm RF Switch for Multi-Standard

This paper proposes a stacked field-effect transistor (FET) single-pole, double-throw (SPDT) RF switch which is capable of multi-standard. Negative voltage generator (NVG), logic controller, level shifter, and RF Switch branches are integrated. A PMOS self-biased strategy is proposed to improve linearity and simplify the design of the logic controller and level shifter. In order to reduce the influence of NVG, a new charge pump (CP) is proposed, and a low pass filter (LPF) is added to stabilize bias voltages. A new layout of the switch FET is proposed to minimize the product of on-state resistance and off-state capacitance (time constant). The RF switch proposed in this paper was implemented in the 0.18 μm silicon on insulator (SOI) process. The measured results show the P1 dB of 40 dBm, and the isolation (ISO) and insert loss (IL) at 1 GHz/5 GHz of 37 dB/22 dB, and 0.36 dB/0.55 dB. The operating frequency range is DC-6 GHz. Supply current is 37uA with the supply voltage of 2.6V.

Electronically beam switched conformal microstrip array antenna for 5G applications

This article presents an electronically beam-switching conformal microstrip array antenna for 5G applications. The 1 × 2 array microstrip antenna is used as a radiating element. They are placed on a hexagonal shape-holding structure to form the conformal geometry. The radiating elements are excited with a six-faced feeding network. It consists of one 3-way power divider and two 2-way power dividers. These power dividers (PDs) are serially connected and formed a six-faced regular structure with 12 output ports. To obtain the beam switching mechanism, the uniform PD is then loaded with RF switched PD. Six angular separation beams (Sectors I–VI) are obtained (each 60°) with RF switches (1 SP3T and 3 SPDT). The response of the feed network is verified experimentally with a conformal array structure. The impedance bandwidth is well below −10 dB and measured for all switched sectors. The measured isolation among different output ports of the device is below −20 dB. The simple microstrip design technique makes the device suitable for beam switching in a large array configuration for 5G applications.

In Situ Microwave Sensors and Switching Circuit for Oil Slick Thickness Measurement

The measurement of oil slick thickness, although at an early stage, has immense applications in determining the extent and quantity of crude oil accidentally discharged in oceans. In this work, we present the design, development and measurement of sensors and switching circuit that were integrated to form a novel microwave oil spill sensor for the determination of oil slick thickness. We used four ultra-wideband polydimethylsiloxane encapsulated antenna-sensors in a cuboid configuration connected to a customised RF switching circuit comprising of two single pole double throw (SPDT) switches. Each of the SPDT switches were connected to two antennas and a port of the vector network analyser (VNA). We developed an android application on a smartphone to select each of the antenna-sensors for the oil slick thickness measurements. The four antenna-sensors operated in the radiating near-field regions. Crude oil has lower density compared to salted seawater, therefore, it floats on the surface. This enabled the four-sensor antenna array to establish the oil thickness using radio frequency. The simulated and measured transmission coefficients showed the capability of the oil slick measurement sensor and switching circuit to determine the oil slick thickness using a novel contact-based in situ microwave approach.

Omnidirectional conformal microstrip array antenna with electronically beam switching capabilities for 5G applications

This article presents an omnidirectional and electronically beam switching conformal microstrip array antenna at 3.5 GHz frequency for 5G applications. The 1×2 array microstrip antenna is used as a radiating element. It is placed on a hexagonal shape-holding structure to form the conformal geometry. The radiating elements are excited by a six-faced feeding network. It consists of one 3-way power divider and two 2-way power dividers. These power dividers are serially connected and form a six-faced regular structure with 12 output ports. The output ports of the uniform power divider feed network are connected to the conformal array and provide the omnidirectional radiation pattern. To obtain the beam switching mechanism, the uniform power divider is then loaded with an RF switched power divider and connected to the conformal array. Six angular separation beams (Sector I to VI) are obtained (60°) with RF switches. The response of the feed network along with the radiating element is verified experimentally. The impedance bandwidth is well below <−10 dB and measured isolation among different output ports are below −20 dB. The simple microstrip design technique makes the antenna suitable for omnidirectional and beam switching in a large array configuration for 5G applications.

Antenna Radiation Efficiency Estimation From Backscattering Measurement Performed Within Reverberation Chambers

This paper presents a contactless measurement method for antenna radiation efficiency estimation within reverberation chambers (RCs). This method does not require to connect any analyzer to the antenna under test (AUT). The AUT radiation efficiency is obtained from the differential measurement of the RC composite $Q$-factor estimated for two AUT load conditions, namely an open circuit and a \SI[detect-weight]{50}{\ohm} load. Remotely-controlled RF switches are used in order to keep the setup identical for both measurements. The method is experimentally validated in two RCs of different volumes (1~m$^3$ and 19~m$^3$) with a wideband patch antenna in the 1.8~GHz to 2.8~GHz frequency range. The estimated efficiency is found to be in very good agreement with the one obtained through a conventional invasive RC measurement technique. This new method is suitable for miniature and buried antenna characterization without access to its port.

Numerical Investigation of Frequency Reconfigurable Antenna with Liquid Metamaterials for X-band

In this paper, a frequency reconfigurable liquid metamaterial microstrip-based radiating structure is proposed and it is an attempt toward achieving reconfiguration in liquid metamaterial-based microstrip radiating structures. Reconfigurable antenna design is superstrated with five liquid metamaterial layers based on a distilled water split-ring resonator. Superstrate layers give enhancement from 6.5 dB to 13.1 dB in gain of the proposed antenna. A patch is reconfigured through PIN diodes as RF switches. Switching ‘on’ and ‘off’ states of PIN diodes are used for reconfiguration of frequency and radiation patterns. Analysis in terms of reflection coefficient, gain (dBi), radiation pattern, bandwidth (BW), and half-power beamwidth (HPBW) is obtained in switch-off and switch-on state. The proposed design provides enhanced gain, reflection coefficient, and multiband characteristics in the 8-12 GHz range suitable for X-band satellite and radar applications. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium provided the original work is properly cited.

Miniaturized BDS Anti-jamming Antenna Research

At present, BeiDou-3 Navigation Satellite System (BDS) was officially commissioned, and BDS is widely used in military and civil terminal types of equipment, including missiles, warships, satellites, ships, aircraft, unmanned bicycles, intelligent transportation, etc. In view of the fact that the navigation signal has easily interfered in the process of practical application, this paper designs a 5-array anti-jamming miniaturized antenna with a volume of only 110mm*110mm. The four surrounding BDS-B3 frequency elements are used for anti-interference processing, and the middle BDS-B1 element is used to receive BDS-B1 frequency signals directly, and the final BDS-B3 and BDS-B1 signals after anti-interference processing are controlled by RF switch for final output to improve navigation accuracy and reduce power consumption when there is no interference. Finally, the RF circuit of the antijamming array antenna is studied. By analyzing the key parameters such as noise coefficient, gain and IMD3 ( Third Order Intermodulation ), the design scheme of high performance antijamming RF circuit is determined.

A Fully Integrated S-Band Phase-Array Receiver in 0.13 μm CMOS SOI

In traditional phased-array T/R modules, front-end modules such as limiter, low-noise amplifier (LNA) and RF switch are generally implemented by independent devices, with low integration and high cost. This paper realizes the integration of all receiver functional modules in the 0.13[Formula: see text][Formula: see text]m CMOS SOI process, including RF switch, LNA with limiter, 6-bit digital controlled attenuator and phase shifter, and drive amplifier. The LNA integrates a limiting function, which can suffer 2[Formula: see text]W continuous wave. Fast charge–discharge circuit is applied to the low insertion loss RF switch, which greatly reduces the switching time. The phase shifter adopts a double balanced switch used for 180∘ phase shift, which significantly reduces the phase error. The measured channel gain is about 28[Formula: see text]dB with an NF about 2.3[Formula: see text]dB and an IP1 dB above [Formula: see text]14[Formula: see text]dBm. The state error of attenuator is less than [Formula: see text][Formula: see text]dB with step error less than [Formula: see text][Formula: see text]dB. The RMS phase error of phase shifter is less than 1.8 degrees. The fully integrated transceiver IC occupies an area of [Formula: see text][Formula: see text]mm2. This receiver draws only 128[Formula: see text]mA with a 3.3[Formula: see text]V power supply.