RF MEMS Switches Research Articles

Temperature Effects in Packaged RF MEMS Switches with Optimized Gold Electroplating Process.

Due to its excellent electrical performance, mechanical reliability, and thermal stability, electroplated gold is still the most commonly used material for movable beams in RF MEMS switches. This paper investigates the influence of process conditions on the quality and growth rate of gold electroplating, and the optimized process parameters for the gold electroplating process are obtained. The characterization of the optimized electroplated gold layer shows that it has small surface roughness and excellent thermal stability. With this optimized gold electroplating process, the RF MEMS switches are fabricated and hermetic packaged. In order to obtain the temperature environment adaptability of the packaged switch, the influence of working temperature is studied. The temperature effects on mechanical performance (includes pull-in voltage and lifetime) and RF performance (includes insertion loss and isolation) are revealed.

Stress Suppression Design for Radiofrequency Microelectromechanical System Switch Based on a Flexible Substrate.

A novel stress suppression design for flexible RF MEMS switches has been presented and demonstrated through theoretical and experimental research to isolate the stress caused by substrate bending. An RF MEMS switch with an S-shaped microspring structure was fabricated by the two-step etching process as a developmental step toward miniaturization and high reliability. The RF MEMS switches with an S-shaped microspring exhibited superior microwave performance and stable driving voltage under different substrate curvatures compared to the conventional non-microspring switches, demonstrating that the bending stress is successfully suppressed by the S-shaped microspring and the island structure. Furthermore, this innovative design could be easily extended to other flexible devices.

RF MEMS switch optimization using ANN and design of antenna with frequency reconfigurability

RF MEMS switch optimization using ANN and design of antenna with frequency reconfigurability

Design of Broadband High-Frequency Multi-Throw RF-MEMS Switches.

This paper introduces a broadband triple-pole triple-throw (3P3T) RF MEMS switch with a frequency range from DC to 380 GHz. The switch achieves precise signal control and efficient modulation through its six-port design. It achieves an insertion loss of -0.66 dB across its frequency range, with isolation and return loss metrics of -32 dB and -15 dB, respectively. With its low actuation voltage of 6.8 V and rapid response time of 2.28 μs, the switch exemplifies power-efficient and prompt switching performance. The compact design is ideal for integration into space-conscious systems. This switch is pivotal for 6G research and has potential applications in satellite communications, military radar systems, and next-generation radio applications that require multi-antenna access.

An Approach to Near Zero Power Bi-Stable Driving With a Simple Pulse Signal for RF MEMS Switch

An Approach to Near Zero Power Bi-Stable Driving With a Simple Pulse Signal for RF MEMS Switch

RF-MEMS Switch for Reconfigurable With Half-Moon Slots on Elliptical-Shaped Patch Antenna for 5G Applications

RF-MEMS Switch for Reconfigurable With Half-Moon Slots on Elliptical-Shaped Patch Antenna for 5G Applications

Design and simulation of a novel RF MEMS switch anchored by springs three-levelly

Design and simulation of a novel RF MEMS switch anchored by springs three-levelly

Study on SR-Crossbar RF MEMS Switch Matrix Port Configuration Scheme with Optimized Consistency.

The performance consistency of an RF MEMS switch matrix is a crucial metric that directly impacts its operational lifespan. An improved crossbar-based RF MEMS switch matrix topology, SR-Crossbar, was investigated in this article. An optimized port configuration scheme was proposed for the RF MEMS switch matrix. Both the utilization probability of individual switch nodes and the path lengths in the switch matrix achieve their best consistency simultaneously under the proposed port configuration scheme. One significant advantage of this scheme lies in that it only adjusts the positions of the input and output ports, with the topology and individual switch nodes kept unchanged. This grants it a high level of generality and feasibility and also introduces an additional degree of freedom for optimizations. In this article, a universal utilization probability function of single nodes was constructed and an optimization objective function for the SR-Crossbar RF MEMS switch matrix was formulated, which provide a convenient approach to directly solving the optimized port configuration scheme for practical applications. Simulations to demonstrate the optimized dynamic and static consistencies were conducted. For an 8 × 8 SR-Crossbar switch matrix, the standard deviations of contact resistances of 128 units and losses of all 64 paths decreased from 1.00 and 0.42 to 0.51 and 0.23, respectively. These results aligned closely with theoretical calculations derived from the proposed model.

Design and investigation of a novel variable reactance-based capacitive RF-MEMS switch with multifrequency operation for mmWave applications

Design and investigation of a novel variable reactance-based capacitive RF-MEMS switch with multifrequency operation for mmWave applications

A compact and reconfigurable C-band DGS-based power divider using RF MEMS capacitive switch

This article presents a reconfigurable and compact power divider design that utilizes a combination of defect structures in the ground plane (DGS) and capacitance loading using a unique RF MEMS switch on the sapphire substrate. The combination of these two techniques results in a reduced-size reconfigurable power divider, wherein the length of the quarter-wavelength transmission line is reduced to λ/16 from λ/4, and the higher-order harmonics are suppressed up to 40 GHz. The RF MEMS capacitive switch is designed, and its DC characteristics are simulated in coventorware. The RF characteristics of the designed power divider are simulated in Ansys HFSS 19.2. The power divider utilizing RF MEMS technology has been fabricated through surface micromachining, requiring only four masks for fabrication. According to measurement findings, insertion loss and return loss are 3.57 dB and 24.6 dB (at 4.4 GHz) and 3.82 dB and 22.06 dB (at 5.4 GHz) when the switch is on and off, respectively. The total area of the design is 3.1 mm2 (21.3% of the conventional power divider). The proposed design can suppress harmonics up to the 8th order by 10 dB. These features render it a viable option for employment in Radio Frequency Integrated Circuits (RFICs).

Analytical model and analysis of RF MEMS switch for Ka-band applications

Analytical model and analysis of RF MEMS switch for Ka-band applications

Analysis of the Electrophysical Characteristics of the RF MEMS Switch Taking into Account the Influence of the Substrate Material

Analysis of the Electrophysical Characteristics of the RF MEMS Switch Taking into Account the Influence of the Substrate Material

In-line Wideband RF MEMS Switch Integrated on PCB Using BCB Planarization

In-line Wideband RF MEMS Switch Integrated on PCB Using BCB Planarization

An L-Slot Frequency Reconfigurable Antenna Based on MEMS Technology.

Given the shortage of spectrum resources and the demand for communication systems of diminutive size, multi-function, and adaptive characteristics, this paper proposes an L-slot frequency reconfigurable antenna based on the MEMS switch. The antenna size is 4.07 × 5.27 mm2 and is suitable for the U-band. The antenna structure consists of two RF MEMS switches, a Rogers RT5880 dielectric substrate, an L-slot patch, and a full-coverage ground. The switch is of a series contact structure and is arranged at the corner of an L-slot. By controlling the on and off state of the switch, the antenna can switch between four states of 42.36, 47.65, 53.13, and 56.72 GHz. According to the simulation results in CST STUDIO SUITE 2018, the maximum gain of the antenna is 7.90 dB, the impedance bandwidth of each state is above 1 GHz, and the direction is mainly consistent. The antenna can meet the demand for multi-frequency millimeter wave communication.

Design of a graphene RF MEMS switch for X–V band

In this paper, we propose a graphene RF MEMS switch design for the X–V band. The structural parameters of graphene, such as the number of layers, the thickness of the medium and the material of the upper electrode, were analyzed by HFSS simulation software. The drive voltage of the switch was found to be as low as 3 V. The switching time is 320 ns. The highest isolation is −47.46 dB@8 GHz; In the 2–56 GHz band, the isolation is better than −20dB. Moreover, we carry out the process design of the switch, including key techniques such as graphene beam fabrication and graphene transfer, it shows that the switch has a great application prospect in the future.

Integrating RF MEMS Switch on Array Antenna to Achieve Reconfigurability in Wideband Application

Reconfigurable multi-band antennas are highly used for commercial as well as military purposes as a single antenna could be reconfigured dynamically to send and the receive multiple signals of different frequency simultaneously. In this work an antenna array is designed and integrated with RF MEMS shunt capacitive switch over it, for the applications of S,C,X-band in the frequency range of 2-12GHz. A membrane that can move freely over a coplanar waveguide serves as the MEMS switch. Here, a double meander tuned dual beam arrangement is used to increase switch isolation. Electrostatic mechanisms are used for actuators due to their low power requirements, compact design, and quick switching. By the simulation result, The beam starts to bend from 0.60793mm to 0.4116mm at the voltage 1.78492mV to 57.7382mV and it provides capacitance at 1.435pF to 1.597nF. It was noticed that the insertion loss (S21) and the return loss (S11) of a MEMS switch are around -0.079 dB and 20.618 dB correspondingly, in order to have a good switching characteristic in the up state. The switch has an insertion loss (S21) of -31.307 dB and return loss (S11) of about -0.256 dB in the up state thus exhibiting good switch characteristics. The RF MEMS shunt capacitive switch is integrated on the predesigned antenna array the dynamically shifting of the switch from on state to off state helps achieving the reconfigurability in the antenna array. Such antennas are applicable in spaceborne radar, communication satellites, unmanned aerial vehicles, unmanned aircraft system and various other communication as well as sensing applications.

Jacobian Based Nonlinear Algorithms for Prediction of Optimized RF MEMS Switch Dimensions

Jacobian Based Nonlinear Algorithms for Prediction of Optimized RF MEMS Switch Dimensions

Low turn-on voltage and high isolation RF MEMS switches for coding metamaterial

Low turn-on voltage and high isolation RF MEMS switches for coding metamaterial

Design and Analysis of Pattern Reconfigurable Antenna Based on RF MEMS Switches

The research on reconfigurable antennas has some disadvantages such as low working frequency and large size. This paper presents a Ka-band patch antenna with pattern reconfigurability using RF MEMS switches. The antenna contains one main patch, two sub-patches, two parasitic patches, and two RF MEMS switches. By controlling the states of the RF MEMS switches, the antenna can achieve three different radiation patterns (−8°, 0°, and +8°) at 35 GHz. The pattern analysis was based on the electric field vector addition method. The analytical, simulated, and measured results agree well with each other. Due to its compact and thin structure of 3.7 mm × 5.2 mm × 0.4 mm, this antenna can be applied in fields such as satellites, smartphones, etc.

Design and performance analysis of ohmic contact based SPMT RF MEMS switch

Design and performance analysis of ohmic contact based SPMT RF MEMS switch