Shallow p-n junctions 110 nm deep have been fabricated using rapid thermal diffusion from a spin-on oxide source. Surface concentrations greater than 3 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">20</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> are possible, with sheet resistivities less than 100 Ω/sq and a maximum reverse-bias leakage at 5 V of 3 nA.cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . Results from 150-nm junctions are also given and are compared with BF <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ion implantation.