Abstract
AbstractAn InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) with a ten-period i (undoped) -InGaN/p (Mg doped) -GaN (2.5 nm/5.0 nm) superlattice (SL) structure, was fabricated. This SL structure that can be regarded as a confinement layer of holes to enhance the hole injection efficiency is inserted between MQW and p-GaN layers. The studied LED device exhibits better current spreading performance and an improved quality, compared with a conventional one without SL structure. Due to the reduced contact resistance as well as more uniformity of carriers injection, the operation voltage at 20 mA is decreased from 3.32 to 3.14 V. A remarkably reduced reverse-biased leakage current (10−7–10−9 A) and higher endurance of the reverse current pulse are found. The measured output power and external quantum efficiency (EQE) of the studied LED are 13.6 mW and 24.8%, respectively. In addition, significant enhancement of 25.4% in output power as well as increment of 5% in EQE for the studied devices is observed, as the studied devices show superior current spreading ability and reduction in dislocations offered by the SL structure.
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