Resonant Tunneling Diodes Research Articles

Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe2/h-BN/WSe2 Junctions.

Resonant tunneling diodes (RTDs) are a core technology in III-V semiconductor devices. The realization of high-performance RTD using two-dimensional (2D) materials has been long awaited, but it has yet to be accomplished. To this end, we investigate a range of WSe2/h-BN/WSe2 RTD devices by varying the number of layers of source and drain WSe2. The highest peak-to-valley ratio (PVR) is demonstrated in the three-layer (3L) WSe2/h-BN/1-layer (1L) WSe2 structure. The observed PVR values of 63.6 at 2 K and 16.2 at 300 K are the highest among the 2D material-based RTDs reported to date. Our results indicate the two key conditions to achieve high PVR: (1) resonant tunneling should occur between the Γ-point bands of the source and drain electrodes, and (2) the Γ-point bands contributing to the resonant tunneling should be energetically separated from the other bands. Our results provide an important step to outperform III-V semiconductor RTDs with 2D material-based RTDs.

Graphene nanoribbon resonant tunneling diode with dual connection between contacts

In this paper, we numerically study the transport properties of a resonant tunneling diode (RTD) based on graphene nanoribbon (GNR) with an H-type antidote between the contacts. The structure may also be thought of as having two parallel (W-shape) parts connecting the contacts, each having a wider channel region sandwiched between two narrower barrier regions. The energy at which quasi-bound states occur in each part depends on the dimensional parameters of the respective portion in the structure. We study how the transmission through quasi-bound states is influenced by the edge states on the contacts and dimensional parameters such as barrier length and also by the ambient temperature. The results are compared with those of an RTD with a single part connecting the contacts. Transmission peaks at different energies are observed for an RTD with asymmetrical lower and upper parts between the contacts. This is then utilized for the creation of two negative differential resistance (NDR) peaks. For numerical computation, the non-equilibrium Green’s function formalism (NEGF) based on the nearest neighbor tight-binding model is employed.

Design of N-doped C60-σ-B-doped C60 photodetector based on resonant tunneling diode using DFT and NEGF method.

Photodetectors utilizing donor/acceptor (D/A) molecules have the capacity to detect light through molecular interactions between a donor and an acceptor molecule. These devices leverage electronic or optical changes within molecules when exposed to light, resulting in observable modifications. The unique properties of photodetectors with D/A molecules make them valuable tools in various fields, including molecular electronics. This paper presents the modeling and simulation of a single-molecule photodetector based on a D/A molecule configuration. The acceptor molecule used is N-doped C60 fullerene, while the donor molecule is B-doped C60 fullerene. Initially, simulations were conducted at zero bias voltage to determine the energy and states of the bipartite molecule. Subsequently, the system's Hamiltonian was computed based on these results. The self-consistent field method (SCF) and optical self-energy coefficients were employed for modeling. Finally, the current-voltage curve of the device was derived for various input light frequencies. The simulation and modeling results demonstrated that the device exhibited negative differential resistances at bias voltages of 0.33 V, 1.58 V, and - 0.93 V, depending on the input light frequency. Furthermore, the designed device demonstrated the ability to detect and absorb waves with different frequencies. The number of current peaks in the current-voltage curve varied with by altering the number of optical modes. The computational work was conducted using the software package of Atomistix ToolKit (ATK-2018.06) and MATLAB code. The calculations were based on the density functional theory (DFT) approach and the self-consistent field method, specifically the non-equilibrium Green function (NEGF). The exchange correlation function was investigated using the generalized gradient approximation (GGA) proposed by Perdew, Burke, and Ernzerhof (PBE). For the calculations, we employed the double-ζ plus polarization (DZP) basis set. Initially, the structures of N doped-C60-σ-B-doped-C60 molecule underwent optimization using the DFT approach implemented in the ATK package. This optimization process allowed us to extract the parameters of the molecule. Subsequently, we utilized the NEGF formalism in MATLAB software to model and simulate photodetector based on the optimized molecule. We calculated important features of the photodetector, such as photocurrent, and compared the performance of the photodetector using photons with energies of 2 and 3 eV.

Programmable Optical Synaptic Linking of Neuromorphic Photonic-Electronic RTD Spiking Circuits.

Interconnectivity between functional building blocks (such as neurons and synapses) represents a fundamental functionality for realizing neuromorphic systems. However, in the domain of neuromorphic photonics, synaptic interlinking and cascadability of spiking optical artificial neurons remains challenging and mostly unexplored in experiments. In this work, we report an optical synaptic link between optoelectronic spiking artificial neurons based upon resonant tunneling diodes (RTDs) that allows for cascadable spike propagation. First, deterministic spiking is triggered using multimodal (electrical and optical) inputs in RTD-based spiking artificial neurons, which are optoelectronic (OE) circuits incorporating either micron-scale RTDs or photosensitive nanopillar-based RTDs. Second, feedforward linking with dynamical weighting of optical spiking signals between pre- and postsynaptic RTD artificial neurons is demonstrated, including cascaded spike activation. By dynamically weighting the amplitude of optical spikes, it is shown how the cascaded spike activation probability in the postsynaptic RTD node directly follows the amplitude of the weighted optical spikes. This work therefore provides the first experimental demonstration of programmable synaptic optical link and spike cascading between multiple fast and efficient RTD OE spiking artificial neurons, therefore providing a key functionality for photonic-electronic spiking neural networks and light-enabled neuromorphic hardware.

Terahertz Resistor-coupled Arrayed Resonant-tunneling-diode Oscillators with High DC-to-RF Efficiency using Metal-insulator-metal Capacitor

Resistor-coupled arrayed resonant-tunneling-diode (RTD) oscillators have emerged as promising candidates for high-performance Terahertz sources. Despite various advantages, the DC-to-RF efficiency of such oscillators is still low. The reason is the loss caused by resistors, which form the ends of the slot antennas. This paper presents a method to increase the DC-to-RF efficiency of resistor-coupled arrayed oscillators. Edged resistors at the ends of slot antennas are covered by metal-insulator-metal capacitors, which shunt the currents flowing through those resistors. Thus, the conduction loss caused by edged resistors is reduced. Owing to low conduction loss, high output power is obtained, resulting in a high DC-to-RF efficiency. It is estimated that the proposed oscillator’s output power and DC-to-RF efficiency reach 1.53 mW and 0.44% at 450 GHz, respectively. A high power density of up to 62 mW/mm2 is another advantage of the proposed RTD oscillator. With the improved characteristics, we believe the proposed oscillators could promote various Terahertz applications.

Gallium nitride-based resonant tunneling diode oscillators

We demonstrated GaN-based resonant tunneling diode (RTD) oscillators employing monolithic microwave integrated circuits. The GaN-based RTDs with a GaN quantum well and AlN double barriers were grown on freestanding c-plane semi-insulating GaN substrates using metal–organic chemical vapor deposition. The circuit components, including an RTD, a coplanar waveguide, a metal–insulator–metal capacitor, and shunt resistors, were monolithically fabricated on the GaN substrate. The circuits oscillated at a fundamental frequency of 17 GHz, which closely matched an estimated frequency using a three-dimensional electromagnetic simulator and a circuit simulator. This study contributes to the advancement of semiconductor high-frequency devices for millimeter wave and terahertz applications.

High-power in-phase and anti-phase mode emission from linear arrays of resonant-tunneling-diode oscillators in the 0.4-to-0.8-THz frequency range

Oscillators based on resonant tunneling diodes (RTDs) are able to reach the highest oscillation frequency among all electronic THz emitters. However, the emitted power from RTDs remains limited. Here, we propose linear RTD oscillator arrays capable of supporting coherent emission from both in-phase and anti-phase coupled modes. The oscillation modes can be selected by adjusting the mesa areas of the RTDs. Both the modes exhibit constructive interference at different angles in the far field, enabling high-power emission. Experimental demonstrations of coherent emission from linear arrays containing 11 RTDs are presented. The anti-phase mode oscillates at ∼450 GHz, emitting about 0.7 mW, while the in-phase mode oscillates at around 750 GHz, emitting about 1 mW. Moreover, certain RTD oscillator arrays exhibit dual-band operation: changing the bias voltage allows for controllable switching between the anti-phase and in-phase modes. Upon bias sweeping in both directions, a notable hysteresis feature is observed. Our linear RTD oscillator array represents a significant step forward in the realization of large arrays for applications requiring continuous-wave THz radiation with substantial power.

Circularly polarized plane terahertz waves radiated from a resonant tunneling diode integrated with a collimating metalens and quarter-wave plate

Terahertz flat optics based on metasurfaces can replace massive optical components with optically thin components. However, metasurfaces with unprecedented material properties frequently produce a specified function, and terahertz flat optics has yet to be commonly adopted in terahertz devices that require multiple functions. Here, we present a two-layer component composed of a collimating metalens and a quarter-wave plate that convert linearly polarized terahertz wide-angle radiation waves from a resonant tunneling diode to circularly polarized plane waves. Our findings would be applied to laminate structures with optical vortices, ultrahigh directivity and arbitrary wavefront control in 6 G wireless communications.

High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes

In this work, high-performance negative differential resistance (NDR) characteristics are demonstrated in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes (RTDs). The devices are grown by plasma-assisted MBE on bulk GaN substrates and exhibit robust and repeatable NDR at RT. A high peak current density of 183 kA cm−2 is simultaneously demonstrated with a large peak-to-valley current ratio of 2.07, mainly benefiting from the significantly reduced dislocation density and improved hyper-abrupt heterointerfaces in the active region, which boosts the electron quantum transport in the resonant tunneling cavity. The achievement shows the promising potential to enhance the oscillation frequency and output power of GaN-based RTD oscillators, imperative for next-generation high-power solid-state compact terahertz oscillators application.

Oscillating direct electric current formed by a resonant tunneling diode inside a cavity with periodically oscillating mirrors.

A novel phenomenon is described that enables the control of the flux of free electrons through a resonance tunneling diode (RTD) via coupling the RTD to a quantized electromagnetic mode in a dark cavity. As the control parameter, one uses here the distance between the two cavity mirrors (which are set to oscillate in time). The effect is illustrated by carrying out standard scattering calculations of the electron flux. However, the only efficient way to rationalize the phenomenon and to be able to select the proper distance between the two cavity mirrors is to employ non-Hermitian quantum mechanics and the language of discrete resonance poles of the scattering matrix. The demonstrated ability to control the flux of free electrons by using a dark cavity might open a new field of research and development of controllable RTD devices.

Phase-resolved measurement and control of ultrafast dynamics in terahertz electronic oscillators

As a key component for next-generation wireless communications (6 G and beyond), terahertz (THz) electronic oscillators are being actively developed. Precise and dynamic phase control of ultrafast THz waveforms is essential for high-speed beam steering and high-capacity data transmission. However, measurement and control of such ultrafast dynamic process is beyond the scope of electronics due to the limited bandwidth of the electronic equipment. Here we surpass this limit by applying photonic technology. Using a femtosecond laser, we generate offset-free THz pulses to phase-lock the electronic oscillators based on resonant tunneling diode. This enables us to perform phase-resolved measurement of the emitted THz electric field waveform in time-domain with sub-cycle time resolution. Ultrafast dynamic response such as anti-phase locking behaviour is observed, which is distinct from in-phase stimulated emission observed in laser oscillators. We also show that the dynamics follows the universal synchronization theory for limit cycle oscillators. This provides a basic guideline for dynamic phase control of THz electronic oscillators, enabling many key performance indicators to be achieved in the new era of 6 G and beyond.

In Situ Leaf Water Status Sensor Using Resonant Tunneling Diodes as Terahertz Source and Sensor

In Situ Leaf Water Status Sensor Using Resonant Tunneling Diodes as Terahertz Source and Sensor

Electronic and transport properties of U-cut edge patterned AGNR superlattice for RTD application

In this paper, we first characterize a superlattice structure created by repeating a heterostructure formed from two armchair graphene nanoribbon (AGNR) segments with different widths. We investigate the electronic and transport properties of this structure by varying its widths and lengths to demonstrate the tunability of its overall band gap. The plot of the local density of states shows the formation of localized states at the low band gap segments of the superlattice. The superlattice is then used as a barrier to create a double barrier quantum well (DBQW) to design a proposed resonant tunneling diode (RTD) structure. We observe this device's negative differential resistance (NDR) operation for a range of bias voltages between the contacts. We study the effect of dimensional parameters on the RTD performance. The non-equilibrium Green's function method, based on a tight-binding model, is employed for numerical computation.

Double ferromagnetic barriers resonant tunneling diodes (RTD) based on the surface of a topological insulator

Resonant tunneling diodes (RTDs), which are based on double barrier quantum well structures, are typically achieved by combining different materials with varying band gap sizes. However, this approach often poses challenges such as material mismatching and dislocations. In this study, we present a novel resonant tunneling diode scheme utilizing the unique properties of topological insulator materials. Specifically, we exploit the gap opening in the band structure of the topological insulator by employing perpendicular magnetization. In this proposed RTD platform, the barrier regions are formed from a ferromagnetic topological insulator through the proximity effect. By adjusting the thickness and spacing of the ferromagnetic barriers, a well region with confined states emerges between the barrier regions. Theoretical analysis reveals that by tuning the back gate voltage, the I-V characteristics exhibit two significant behaviors: negative differential resistance (NDR) and step-like behavior for Fermi energy values of EF = −3 and EF = 3, respectively. Furthermore, we observe an increase in the peak-to-valley ratio (PVR) with higher magnetization values. Notably, the PVR reaches a value of 7.13 for a magnetization value of m = 9. Additionally, we investigate the influence of the well width and barrier thickness on the transport properties of the device.

Enabling cost-effective wireless THz communication through semiconductor optical amplifier’s direct/cross gain modulation for seamless integration of hybrid fiber-coaxial connectivity

We propose a cost-effective THz wireless communication scheme for future femtocell networks that leverages either direct gain modulation (DGM) or cross gain modulation (XGM) of a semiconductor optical amplifier (SOA) to convert coaxially or optically carried data into intensity-modulated THz waves, respectively. This architecture, based on an SOA and a uni-traveling-carrier photodiode (UTC-PD), has advantages over typical THz modulation schemes involving a resonant tunneling diode or an electro-optic modulator combined with a UTC-PD. Consequently, it facilitates the seamless convergence of hybrid fiber-coaxial networks to THz radio access networks with low cost, straightforward monolithic integration, and a more compact footprint. Furthermore, we experimentally verified the possibility of non-return-to-zero on–off keying wireless communication over 0.5 m in the 300 GHz band, achieving real-time transmission of 4 Gbit/s for coaxial access via an SOA’s DGM and 10 Gbit/s for fiber access via the SOA’s XGM. Notably, these data rates were attained by simple non-coherent THz intensity demodulation based on a Fermi-level managed barrier diode while meeting the 7% hard-decision forward error correction (HD-FEC) threshold (3.4×10−3). Finally, we conducted an analysis of the merits and drawbacks of the proposed THz communication scheme based on the combination of an SOA and a UTC-PD, discussed bottlenecks that hinder further rate improvement, and explored possibilities for optimization. In conclusion, this scheme is crucial for realizing future ultra-high-speed wireless networks that seamlessly connect to fiber-coaxial networks.

Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates

Nonvolatile memory using intersubband transitions and quantum-well electron accumulation in GaN/AlN resonant tunneling diodes (RTDs) is a promising candidate for high-speed nonvolatile memory operating on a picosecond timescale. This memory has been fabricated on sapphire(0001) substrates to date because of the high affinity between the nitride materials and the substrate. However, the fabrication of this memory on Si(111) substrates is attractive to realize hybrid integration with Si devices and nonvolatile memory and three-dimensional integration such as chip-on-wafer and wafer-on-wafer. In this study, GaN/AlN RTDs are fabricated on a Si(111) substrate using metal-organic vapor phase epitaxy. The large strain caused by the differences in the thermal expansion coefficients and lattice constants between the Si(111) substrate and nitride materials are suppressed by a growth technique based on the insertion of low-temperature-grown AlGaN and thin AlN layers. The GaN/AlN RTDs fabricated on Si(111) substrates show clear GaN/AlN heterointerfaces and a high ON/OFF ratio of >220, which are equivalent to those for devices fabricated on sapphire(0001) substrates. However, the nonvolatile memory characteristics fluctuate by repeated write/erase memory operations. Evaluation of the ON/OFF switching time and endurance characteristics indicates that the instability of the nonvolatile memory characteristics is caused by electron leakage through deep levels in the quantum-well structure. Possible methods for suppressing this are discussed with an aim of realizing high-speed and high-endurance nonvolatile memory.

Terahertz plasmonic resonances in coplanar graphene nanoribbon structures

We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the GNR structures are associated with the electron and hole inductances and the lateral inter-GNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic oscillations in the GNR structures with long GNRs. The GNR structures under consideration can be used in different THz devices as the resonant structures incorporated in THz detectors, THz sources using resonant-tunneling diodes, photomixers, and surface acoustic wave sensors.

Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy

Hole-tunneling Si0.82Ge0.18/Si asymmetric triple-barrier (TB) resonant tunneling diodes (p-RTDs) were created by sputter epitaxy instead of conventional chemical vapor phase epitaxy. As a result, a peak current density (PCD) of 297 kA/cm2 with a peak-to-valley current ratio of 7.3 was recorded at room temperature. The observed high planarity of the films grown by sputter epitaxy is also considered one of the factors behind the high PCD. From the results of self-consistent theoretical calculations of current–voltage characteristics using box-shaped potentials as a first approximation and considering space charge effects of quantum wells, heavy-hole-to-heavy-hole and light-hole-to-light-hole state transitions under the tunneling conditions of the TB potential structure applied in this study were found to be inherent current paths. Moreover, the light and heavy hole currents contribute almost equally to the overall device current, resulting in a theoretical PCD of 637 kA/cm2, which is close to the experimental result. Further analytical simulations with adjusted series resistance and thickness of the nondoped layer allowed the alignment of the theoretically obtained PCD voltage position with the experimentally obtained one. Thus, the theoretical and analytical calculations explain the operation mechanisms of SiGe/Si p-RTDs, and the proposed fabrication method using our sputter epitaxy method is very useful for the actual production of high-PCD SiGe/Si p-RTDs operating at room temperature.

Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation.

ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density-voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm-3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.

Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

This work demonstrates high-performance AlN/GaN double-barrier resonant tunneling diodes (RTDs) with high peak current density grown by plasma-assisted molecular beam epitaxy on c-plane free-standing GaN substrates, featuring stable and repeatable negative differential resistance (NDR) characteristics at room temperature. By scaling down the barrier thickness of AlN barrier and the lateral mesa size of collector, the record peak current density of 1551 kA/cm2 is achieved along with a peak-to-valley current ratio (PVCR) of 1.24, which is attributed to the reduced resonant tunneling time under thinner AlN barrier and the suppressed external incoherent valley current by reducing the dislocation number contained in the RTD device with the smaller size of collector. By statistically analyzing the NDR performance of RTD devices with different thicknesses of AlN barrier, the average peak current density increases from 145.7 to 1215.1 kA/cm2, while the average PVCR decreases from 1.45 to 1.1, correspondingly, accompanying with a decreased peak voltage from 6.89 to 5.49 V, with downscaling the AlN barrier thickness from 1.5 to 1.25 nm. The peak current density obtained in this work is the highest value among all the reported nitride-based RTDs up until now while maintaining high PVCR value simultaneously, which illustrates that ultra-scaled RTD based on vertical quantum-well structure and lateral collector size is a valuable approach for the development of nitride-based RTDs with excellent NDR characteristics and reveals their great potential applications in high-frequency oscillation sources and high-speed switch circuits.