Resistance Rs Research Articles

Dehumidification performance of PEDOT:PSS film based on direct electric heating regeneration

In order to solve the problem of high energy consumption in the regeneration process of solid adsorption dehumidifying material, a direct electric heating regeneration dehumidifying film (PPF)was designed and prepared by Soaking −Drying method utilizing poly (3,4-vinyldioxthiophene) −polystyrene sulfonic acid (PEDOT:PSS) as material. Comparing with the film prepared by two times Soaking −Drying processes (PPF-2), the moisture adsorption of the film prepared by four times Soaking −Drying processes (PPF-4) increased from 5.1 g/m2 to 9.1 g/m2, and the edge-to-edge resistance (Rs) decreased from 13.3 Ω/sq to 5.6 Ω/sq. The maximum mean surface temperature of PPF-4 was 42.3 °C under regeneration voltage of 6 V, and the regeneration efficiency was 84.6 %. Subsequent continuous experiments were conducted to clarify its dehumidification process and effectiveness. The results indicated that the dehumidification performance of PPF-4 was influenced by absolute humidity and regeneration voltage. The mean regeneration rate was changed by about 0.15 g/(kg·s) when the inlet absolute humidity was varied by 1 g/kg under the regeneration voltage of 6 V. The continuous five-cycle tests maintained stable adsorption and regeneration, with a dehumidification coefficient performance (DCOP) ranging from 2.00 to 3.80.

The Role of Self-Assembly Monolayers (SAM) on Schottky Diode Performance

This study investigates the electrical and charge transport properties of Schottky diodes with a p-Si/TiO2/SAM/Al structure, incorporating the self-assembly monolayers (SAMs) 4", 4""-[biphenyl-4,4" diylbis(phenylimino)]dibiphenyl-4-carboxylic acid (MZ187) onto a titanium dioxide (TiO2) layer synthesized via the sol-gel method. The impact of the MZ187 molecule on diode performance was evaluated based on parameters such as the barrier height (∅b), ideality factor (n), and series resistance (Rs). Experimental results reveal that the MZ187 monolayers on TiO2 substantially enhanced diode performance, reducing the n from 3.7 for the control diode to 2.7 for the MZ187-modified diode. The Rs was also significantly reduced, while the ∅b increased. The rectification ratio increased from 1.3x102 for the control diode to 2.2x103 for the MZ187 modified diode. These improvements are attributed to the ability of MZ187 molecules to minimize interface states (Nss) and improve surface quality. These findings underscore the critical role of SAMs in optimizing Schottky diode performance and demonstrate how the MZ187 molecule enhances diode efficiency by altering interface properties. The effectiveness of SAM coatings in enhancing Schottky diode performance makes a significant contribution to the field of nanoelectronics. This research paves the way for future studies on the use of SAMs in various nano electronic applications and offers promising potential for improving the performance and reliability of these technologies.

Characterization of the triphenylmethane dye (Patent Blue V)-modified Al/p-Si diode

The sol-gel spin coating method, an easily applicable, low-temperature, and inexpensive method, was used to grow Patent Blue V (PBV) organic thin films placed between metal and semiconductor. Atomic force microscope images were taken to reveal the morphological structure of the resulting organic film. FTIR, NMR, and UV-Vis measurements were taken to investigate the chemical features and optical structure of the PBV molecule. Using the traditional I-V, Cheung, and Norde methods of the produced Al/PBV/p-Si diode structure, ideality factor (n), barrier height (Φb), series resistance (Rs), and interfacial density of states (Nss) parameters were calculated. The differences between the results obtained with these methods arise from calculating the I-V characteristic of the methods from different regions. The ideality value of n for the produced diodes is much greater than one (n > > 1). Deviating the calculated n value from 1 indicates possible mechanisms, such as generation-recombination effect, organic PBV layer, and interfacial states. It was observed that the electronic parameters of the Al/p-Si conventional junction can be controlled using an organic PBV interlayer.Graphical abstract

Enhancement of Electrical Parameter Extraction from Solar Cells Using a Hybrid Genetic Algorithm with the Levenberg-Marquardt Method

Accurate modeling and simulation of solar photovoltaic (PV) systems are critical for optimizing their performance and efficiency. This requires precise determination of electrical parameters of solar cells, such as photocurrent (Iph), saturation current (I0), series resistance (Rs), shunt resistance (Rsh), and ideality factor (n). Traditional numerical methods for parameter extraction often face limitations in complexity, speed, and assumption dependencies. To address these issues, this study proposes a hybrid method that combines a genetic algorithm with the Levenberg-Marquardt algorithm (GALM) for solar cell parameter extraction. The genetic algorithm provides a robust initial estimate of the parameters, which is then refined by the Levenberg-Marquardt algorithm to achieve high accuracy. The performance of the proposed GALM method is validated using experimental data from a 57-mm silicon solar cell from R.T.C. France. Results indicate that the GALM method achieves one of the lowest RMSE values compared to other optimization techniques, demonstrating its effectiveness in accurately extracting solar cell parameters and closely matching the experimental I-V data. This contributes significantly to optimizing the performance and efficiency of PV systems.

Multifunctional transparent conductive films via Langmuir-Blodgett assembly of large MXene flakes.

The rapid development of information technology has put forward new requirements for multifunctional properties of transparent conductive films (TCFs) beyond their excellent optoelectrical performance. Despite the recent progress in the preparation of multifunctional films composed of Ti3C2Tx MXenes, achieving highly uniform single-layer Ti3C2Tx MXene films (SLMFs) with continuous and dense conductive pathways to realize multifunctional TCFs (M-TCFs) remains a significant challenge. Here, the Langmuir-Blodgett (LB) technique is employed to assemble large Ti3C2Tx MXene (LM) flakes (∼52 μm2) into SLMFs with controlled stacking density and morphology, enabling the fabrication of M-TCFs with high conductivity and transparency simultaneously. The SLMFs assembled from LM flakes (L-SLMFs) not only exhibit balanced optical and electrical properties with a figure of merit of 9.67 (sheet resistance Rs = 318 Ω sq-1 at transmittance T = 88%) due to the close-packed morphology with significantly reduced inter-flake junctions, but also demonstrate excellent electrothermal conversion capability (105.5 °C within 40 s at 20 V when T = 75%) and remarkable absolute shielding effectiveness (up to 7.86 × 105 dB cm2 g-1 at T = 89%). The LB assembly approach provides a straightforward way to produce high-performance M-TCFs for next-generation electronic devices.

Designing and Optimizing Electrode Materials for Energy Harvesting in CAPMIX Cells.

The growing demand for clean, decentralized energy has increased interest in blue energy, which generates power from water with different salt concentrations. Despite its potential as a renewable, low-cost energy source, optimizing electrode materials remains a challenge. This work presents a nanomaterial developed via microwave-assisted sol-gel methodology for blue energy applications, where ion diffusion and charge storage are critical. AX-7 carbon, designed for this study, features wide pores, enhancing ion diffusion. Compared to commercial NORIT carbon, AX-7 has a higher mesopore volume and external surface area, improving its overall performance. The synthesis process has been optimized and scaled up for evaluation in CAPMIX electrochemical cell stacks. Moreover, the lower series resistance (Rs) significantly boosts energy recovery, with AX-7 demonstrating superior performance. This advantage is especially evident during fresh-water cycles, where this material achieves significantly lower Rs compared to the commercial one.

Development of blue-light GaN based micro light-emitting diodes using ion implantation technology

This study fabricated 10 μm chip size μLEDs of blue-light GaN based epilayers structure with different mesa processes using dry etching and ion implantation technology. Two ion sources, As and Ar, were applied to implant into the LED structure to achieve material isolation and avoid defects on the mesa sidewall caused by the plasma process. Excellent turn-on behavior was obtained in both ion-implanted samples, which also exhibited lower leakage current compared to the sample fabricated by the dry etching process. Additionally, lower dynamic resistance (Rd) and series resistance (Rs) were obtained with Ar implantation, leading to a better wall-plug efficiency of 10.66% in this sample. Consequently, outstanding external quantum efficiency (EQE) values were also present in both implant samples, particularly in the sample implanted with Ar ions. This study proves that reducing defects on the mesa sidewall can further enhance device properties by suppressing non-radiative recombination behavior in small chip size devices. Overall, if implantation is used to replace the traditional dry etching process for mesa fabrication, the ideality factor can decrease from 11.89 to 2.2, and EQE can improve from 8.67 to 11.03%.

Incorporation of Chromium Nanostructures into PVC Interlayer to Improve Electrical Features of Au/n-Si Schottky Diodes

Abstract This work comprehensively examined the effects of polyvinyl chloride (PVC) polymer and polyvinyl chloride-chromium (PVC:Cr) thin layers on the electronic characteristics of Au/n-Si (D0) sample. To achieve this, the configurations Au/PVC/n-Si (D1) and Au/PVC:Cr/n-Si (D2) were created. A detailed description of the PVC:Cr nanocomposite synthesis process was given. The Cr nanoparticles and PVC:Cr nanocomposite were analyzed using energy-dispersive X-ray (EDX) spectroscopy and field emission scanning electron microscopy (FE-SEM) to determine the purity and surface morphology. Following the structural analysis, current-voltage (I-V) measurements were taken at a wide voltage range (±3 V), and several methodologies were applied to obtain and compare the major electronic variables of the created Schottky diodes. Experimental results show that PVC:Cr nanocomposite reduced ideality factor (n), surface states density (Nss), and series resistance (Rs) while increasing barrier height (BH) of the electric potential, shunt resistance (Rsh), and rectification rate (RR). It was found that the D2 sample's RR was 89 times greater than the D0 sample's. Furthermore, the surface state density (Nss) depending on the energy was determined using the n(V) and ΦB0(V) functions. Based on the ln(IR)-VR0.5 profile in the reverse bias region, a Schottky emission (SE) transport mechanism was found to be effective for the D0 structure. On the other hand, the indicates that D1 and D2 structures exhibited the Poole-Frenkel emission (PFE) type.

PbO Based MIS Nanostructure Device C-V and I-V Characteristics; Calculation Techniques, Comparisons

The electrical properties of an Al/PbO/p-Si nanostructure forming PbO based diode of MIS-type (metal-insulator semiconductor) diode have been investigated. This particular diode structure is relatively new and has limited documentation in the existing literature. The prepared heterostructure, whose capacitance and current-voltage (C-V and I-V) characteristics were measured at room temperature in dark conditions. Key parameters such as the ideality factor n, barrier height ϕb and series resistance Rs were calculated using multiple methods, including the Standard, Norde, Lien-So-Nicolet, and Cheung techniques. These parameters provided insight into the molecular dynamics influencing the electrical characteristics of the diode. The annealing process at 290°C for 20 minutes was found to have a significant impact on the electrical behaviour of the sample. This study highlights the potential of PbO-based diodes for use in high-performance nanostructure devices.

Estimation of photovoltaic model parameters using the Rao-1 optimization algorithm

Predicting the performance of photovoltaic (PV) systems in industrial applications has become increasingly important due to the complex and non-linear behavior of PV modules. Accurate performance prediction is essential for optimizing energy production and ensuring system reliability. However, a significant challenge arises from the lack of critical information in manufacturer datasheets, which often do not include all the necessary details for precise PV module modeling. This limitation can hinder accurate analysis and system performance evaluation. Optimization methods are recommended to accurately determine the electrical and physical characteristics of PV cells and modules to address this issue. These methods enable detailed and precise analysis of current-voltage (I-V) and power-voltage (P-V) characteristics across various PV models, improving the overall modeling accuracy. Among these methods, the Rao-1 optimization technique has been selected and evaluated in this paper to solve this issue. It is specifically used to extract the unknown parameters of photovoltaic models, including the photo-generated current (Iph), diode ideality factor (n), series resistance (Rs), reverse saturation current (I0), and shunt resistance (Rsh). The effectiveness of the Rao-1 optimization method has been demonstrated through its successful application in estimating PV parameters across a wide range of datasets, ensuring its reliability and adaptability for various industrial scenarios.

Estimation of photovoltaic model parameters using the Rao-1 optimization algorithm

Predicting the performance of photovoltaic (PV) systems in industrial applications has become increasingly important due to the complex and non-linear behavior of PV modules. Accurate performance prediction is essential for optimizing energy production and ensuring system reliability. However, a significant challenge arises from the lack of critical information in manufacturer datasheets, which often do not include all the necessary details for precise PV module modeling. This limitation can hinder accurate analysis and system performance evaluation. Optimization methods are recommended to accurately determine the electrical and physical characteristics of PV cells and modules to address this issue. These methods enable detailed and precise analysis of current-voltage (I-V) and power-voltage (P-V) characteristics across various PV models, improving the overall modeling accuracy. Among these methods, the Rao-1 optimization technique has been selected and evaluated in this paper to solve this issue. It is specifically used to extract the unknown parameters of photovoltaic models, including the photo-generated current (Iph), diode ideality factor (n), series resistance (Rs), reverse saturation current (I0), and shunt resistance (Rsh). The effectiveness of the Rao-1 optimization method has been demonstrated through its successful application in estimating PV parameters across a wide range of datasets, ensuring its reliability and adaptability for various industrial scenarios.

Angle-insensitive broadband transparent microwave absorber with high shielding effectiveness.

In this work, a specially designed multilayer indium tin oxide (ITO) mesh structure metasurface was proposed as a microwave absorber, achieving both excellent angle-insensitive broadband absorption and high shielding effectiveness (SE). It features gradually changing surface resistance (Rs ), to expand the absorption bandwidth while maintaining high SE. Also, a folded square ring metasurface was designed to effectively suppress surface wave grating lobes, as well as to reduce the unit size of the metasurface and thus the absorber. What is more, an additional top dielectric layer was used to stabilize the absorption and SE under an oblique incidence condition (≤45°). As a result, an ultra-broadband miniaturized transparent absorber was realized, with an absorption of >80% in a 2.10-14.65 GHz frequency band (150% relative bandwidth) and a SE of >20 dB in 1-12 GHz at normal incident. The relative thickness of the absorber is only ∼0.117λ0, and the unit size of the metasurface is only 0.083λ0. The broadband absorption mechanism of the multilayer absorber was analyzed from the aspects of resonance frequency, surface current distribution, and equivalent circuit. In general, the proposed absorber showed angle-insensitive ultra-wideband absorption with high SE at the same time, implying a wide range of applications.

Effect of differently shaped spiral inductors on micro power integrated circuit

Abstract This paper investigates the impact of parasitic effects on the performance of on-chip planar spiral inductors for DC-DC converter applications, focusing on three geometries: square, hexagonal, and octagonal. Detailed electromagnetic simulations in MATLAB are employed to analyze the frequency-dependent behavior of key parasitic components, including ohmic resistance (Rs), substrate resistance (Rsub), oxide capacitance (Cox), and substrate capacitance (Csub) across a frequency range of 1 GHz to 10 GHz. The study reveals that the octagonal spiral inductor outperforms the others, demonstrating a 29% reduction in ohmic resistance at 1.5 GHz compared to the square geometry and achieving the highest substrate resistance, which helps reduce current leakage. Additionally, the octagonal inductor exhibits the lowest parasitic capacitance and a high-quality factor, peaking at 30 at 4.2 GHz. These results underscore the significant impact of inductor geometry on minimizing energy dissipation and electromagnetic interference, positioning the octagonal spiral inductor as a compelling choice for enhancing efficiency and miniaturization in DCDC converter designs.

Investigation of Interface States, Series Resistance and Barrier Height Variation with Frequency in Al/WO3/p-Si (MOS) Capacitors

In the study, Tungsten oxide (WO3) was synthesized via the sol-gel method on P-type 〈100〉 silicon wafer. Electrical characterization of the Al/WO3/p-Si (MOS) capacitor was performed through capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at different frequencies (from 50 kHz to 1 MHz). As the applied voltage frequency increased, the maximum values of the measured C-V and G/ω-V characteristics decreased. This phenomenon was attributed to interface state trap (Dit) charges following low-frequency AC voltage signals. The variation of series resistance (Rs) and barrier height (ΦB) with frequency was examined. It was shown that Rs significantly affects the device behaviour. The ΦB also decreased with increasing frequency. This situation is suggested to indirectly affect the mobility of charge carriers directly through the Vo value. Ultimately, although WO3 material exhibits variable results in terms of dielectric properties, the study's finding of a high dielectric constant (e.g., 3688.75) is consistent with similar results in the literature. This high dielectric property underscores the material's importance for future applications.

Computational simulation of alternating current (AC) impedance of hardened cement mortar

The present study proposes a novel methodology for simulating the AC impedance of hardened cement mortar, through the technology of micro computed tomography based finite element analysis (μCT-based FEA). Three-dimensional (3D) physical meso-scale structure of hardened cement mortar is first segmented into multicomponent phases of air void, cement paste, sand aggregate, and interfacial transition zone (ITZ) considered with different thicknesses. Then, the real structure of mortar after discretization is subjected to current harmonic perturbations to acquire its AC impedance spectra. Compared to traditional impedance measurement, the proposed simulation approach avoids the influence of external electrode and hence improves the characterization of cementitious electrochemical system in its true state. The simulated complex impedance presents a depressed high-frequency loop and varies with the increasing ITZ thickness in the range of 26.6 to 106.4 μm. The numerical impedance plots are fitted to a theoretical equivalent circuit model of Rs(RctQ) consisting of bulk ionic resistance (Rs), charge transfer resistance (Rct) at the solid/liquid interface, and non-Debye capacitance (Q). The changes in mesostructure of cement mortar with the thickened ITZs can be captured by a linear reduction of Rs, a non-linear decrease of Q, and a limited increase of Rct. Based on the electrochemical impedance modelling, the study establishes the mathematical relationship between the defect's volume (air voids plus ITZ) and the model's parameters (Rs or Rct) for prediction of material deterioration.

Improvement of Performance of Perovskite Solar Cell By in-Plane Design

Perovskite solar cells (PSCs) have attracted attention as one of the next-generation solar cell. To enhance power conversion efficiency (PCE) of PSCs, a great deal of research has been conducted so far, mainly in the field of material development. However, in-plane cell design for evaluating the performance of PSCs are currently not standardized. In this study, optimization of device structures was investigated for the aim of to minimize charge transfer losses and improve FF and PCE.The fabrication of perovskite solar cell is as follows; (i) as the electron transport layer (ETL), compact TiO2 and mesoporous TiO2 were deposited on FTO glass substrates by spray coating and spin-coating. (ii) K0.025(Cs0.1FA0.9)0.975PbI3 perovskite was deposited by spin-coating using the anti-solvent method1). (iii) Spiro-OMeTAD was spin-coated as the hole transport layer. (iv) The electrodes were insulated by laser etching. (v) Finally, Au was vacuum-deposited and laser-etched again to fabricate the cell.Throughout the two laser etching stages in the cell fabrication process, adjustments are made to the shapes of the ETL/perovskite layer/HTL and the Au electrode. Specifically, performance was compared for three patterns of devices; (a) round-shaped generator section and current-collecting bridge, (b) shorter distance of current-collecting bridge, (c) shorter distance of current-collecting bridge and same width of current-collecting bridge as generator section. Photoelectric conversion characteristics was determined based on I-V characteristics measured under quasi-sunlight (AM 1.5, 100 mW/cm2) irradiation. In all cases, the shading mask area was kept constant at 0.18 cm2.Figure shows images of three patterns of the results of comparing FF from I-V measurements for each device with varying shapes. It can be seen that even PSCs fabricated from the same material exhibit different FF values depending on the cell shapes. PCE and FF were higher in (b) than in (a), with the highest values observed for devices of (c), in which the collector bridge is shortened and the width is increased. In addition, the series resistance (Rs) and shunt resistance (Rsh) were approximated from the slope of the I-V curve. Among the internal resistances, the series resistance (Rs) decreased, leading to an improvement in FF. This is thought to be due to the decrease of series resistance of electron and hole transfer. Figure 1

(Digital Presentation) Investigation of Electrochemical Cu Deposition on Nanoscale Sculptured Al Surfaces by FFT-Impedance Spectroscopy

Fast Fourier transform impedance spectroscopy (FFT-IS) is a well established technique to study in-situ e.g. the involved electrochemical dissolution and deposition phenomena at the electrolyte / substrate interface [1,2]. In contrast to conventional electrochemical impedance spectroscopy (EIS), FFT-IS allows for the simultaneous application of all probing frequencies at the same and thus highly time-resolved investigations of the ongoing electrochemical phenomena.FFT-IS has been employed to study the electrochemical deposition process of Cu on nano-scale-sculptured Al during the entire deposition process, since such a nanoscale-sculptured Al surface exhibits a high multitude of different-sized cubic undercut structures that must be enclosed and overgrown by Cu to generate a good mechanically interconnection between Al and Cu.The analysis of the IS data reveals that the deposition process can be modeled by an equivalent circuit consisting of a series resistance Rs and three Voigt-Kelvin elements, all connected in series to each other. The first one is a capacitor Cp1 and a resistor Rp1, followed by a Warburg element Zw and a resistor Rp2, and finally by another capacitor Cp3 and resistor Rp3 as last Voigt-Kelvin element, see Fig. 1.The time resolved analysis of the above described parameters reveals that three major processes are involved in the Cu deposition process that occur locally in series on the surface, but parallel in time. Based on the time evolution of these fit parameters the Cu deposition process can be sub-divided into three stages that were identified by investigating the nanoscale sculptured Al surface during Cu deposition at characteristic points of each stage by scanning electron microscopy. The knowledge and understanding of these processes allows tailoring and fine-tuning the Cu electrolyte and the deposition process itself.Fig. 1 Nyquist plot of recorded impedance data (boxes) and corresponding fit data (solid line) of the used equivalent circuit model[1] M. Leisner, J. Carstensen, and H. Föll, J. Electroanal. Chem. 615(2), 124 (2008). Figure 1

The impact of green chemistry to synthesize PVA/cobalt metal complexes (CoMCs) composites with enhanced optical behavior

This study focuses on the preparation of amorphous polymer composites with an indirect band gap, which are essential for advancing optoelectronic devices. We synthesized cobalt metal complexes (CoMCs) by combining an aqueous solution of cobalt (II) acetate with green tea dye (GTD) at 70 °C, utilizing a cost-effective and environmentally friendly approach. Polyvinyl alcohol (PVA) was integrated with the synthesized CoMCs using a solution cast method at ambient temperature. The resulting CoMCs and PVA-based composite films were characterized through X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and UV–Vis spectroscopy. FTIR analysis provided insights into the functional groups of GTD and their role in CoMC formation, highlighting the innovative green coordination chemistry method for low-cost metal complex production. The interactions between PVA and CoMCs were confirmed by FTIR, while the optical properties demonstrated that green-synthesized metal complexes combined with polar polymers offer a novel approach to enhance absorption behavior and reduce the optical band gap. XRD analysis indicated an increase in the amorphous phase, and Urbach energy values confirmed a reduction in crystallinity. The Wemple-DiDomenico (W-D) model was employed to determine the optical parameters, including the band gap energy (Eg), which decreased from 6.05 eV to 1.5 eV with the addition of 36 mL of CoMCs. Furthermore, the optical dielectric function analysis provided important parameters such as effective mass (N/m∗), relaxation time (τ), plasma frequency (ωp), optical mobility (μopt), and optical resistivity (ρopt). We also evaluated sheet resistance (Rs), thermal emissivity (ɛTh), and figure of merit (φ) for both pure and doped PVA films, with notable peaks in the figure of merit plots shifting to higher wavelengths as CoMCs concentration increased. This work demonstrates the effectiveness of multiple models and methodologies in accurately determining the optical band gap, emphasizing its significance for photonics and optoelectronic applications.

Trichosanthes Cucumerina Derived Activated Carbon: The Potential Electrode material for High Energy Symmetric Supercapacitor

AbstractHigh surface area porous activated carbons obtained from sustainable biomass are excellent functional materials for energy storage applications. This is the first report on snake gourd (Trichosanthes cucumerina) pericarp as a raw material of activated carbon and supercapacitor electrode material. Herein, a simple KOH activation and carbonisation method is used. The obtained SGC900 sample has a surface area of 1841 m2/g and an average pore volume of 0.52 cm3/g. SGC900 based supercapacitor exhibits good electrochemical storage capacity in 1 M H2SO4 with a specific capacitance of 206 F/g at 1 A/g. The symmetric device delivered an energy density of 11 Wh/kg at a power density of 1.6 kW/kg. It provides a series resistance (Rs) of 1.2 Ω and a charge transfer resistance Rct of 1.9 Ω. Furthermore, the device retains 95 % of capacitance over 5000 cycles. This work presents an easy and feasible approach for producing value‐added activated carbon from sustainable biomass, potentially used in high‐performance energy storage.

Frequency and voltage dependent of electrical and dielectric properties of Ag/GO doped NiO/p-Si/Al MOS structures under darkness and light

At studying, we searched the frequency and voltage dependency of the electrical and dielectric traits of a nano-made NiO-contributed GO thin film enlarged on a p-type silicon substrate using sol-gel technique. The electrical and dielectric features of Ag/GO-NiO/p-Si were investigated by capacitance–voltage (C–V) and conductance–voltage (G/ ω–V) indications in the frequency interval of 10 kHz–1000 kHz below dark and illumination at ambient temperature. While the capacitance and series resistance (Rs) values decrease with increment of frequency and increment trend in conductance was observed with the increasement of frequency. These decrement/increment trend observed at greater frequencies are attributed to existence of interface state densities. After, the frequency dependence of dielectric constant (εʼ), dielectric loss (εʼʼ), loss tangent (tanδ), ac electrical conductivity (σac) and complex impedance (Z∗) of Ag/GO-NiO/p-Si structures were investigated in the frequency by means of the capacitance–voltage (C–V) and conductance-voltage (G/w-V) indications. The experimental findings showed that εʼ, εʼʼ and σac were strongly frequency dependent.