Resistivity Upturn Research Articles

Widely Varying Kondo and Magnetic Interactions in Molecule Gold Nanostructured Materials by Changing the Gold Nanoarchitecture

Delocalized-localized electron interactions are central to strongly correlated electron phenomena. Here, we study the Kondo effect, a prototypical strongly correlated phenomena, in a tunable fashion using gold nanostructures (nanoparticle, NP, and nanoshell, NS) + molecule cross-linkers (butanedithiol, BDT). NP films exhibit hallmark signatures of the Kondo effect, including (1) a log temperature resistance upturn as temperature decreases in a metallic regime, and (2) zero-bias conductance peaks (ZBCPs) that are well fit by a Frota function near a percolation insulator transition, previously used to model Kondo peaks observed using tunnel junctions. Remarkably, NP + NS films exhibit ZBCPs that persist to >220 K, i.e., >10-fold higher than that in NP films. Magnetic measurements reveal that moments in NP powders align, and in NS powders, they antialign at low temperatures. Based on these observations, we propose a mechanism in which varying such material nanobuilding blocks can modify electron-electron interactions to such a large degree.

Electrical transport mechanism and magnetoresistive behavior of trilayer La0.7Sr0.3MnO3/γ-Fe2O3/La0.7Sr0.3MnO3 (FM/FIM/FM) manganites

The magnetization, electrical transport, and magnetoresistance (MR) behavior of Pulsed Laser Deposited polycrystalline tri-layer La0.7Sr0.3MnO3 (LSMO)/γ-Fe2O3/LSMO film and single layer LSMO film on Si (100) substrates are investigated in the temperature range of 5 K–300 K. A magnetic anomaly appears in the magnetization {M(T)} and resistivity {ρ(T)} characterizations of the trilayer film at around 100 K, which is quite robust and is present even at 7 T of the applied magnetic field. The trilayer sample exhibits metal to insulator (MIT) transition at 210 K. The transport behavior of both the films is analysed in the context of nearest-neighbour small polaron hopping model (SPH), Mott variable range hopping (VRH) mechanism as well as thermal activation (TA) model in different temperature ranges for both the films under study. The correlated polarons or less mobile bipolarons exist in the metallic regime of the trilayer sample due to the presence of magnetic inhomogeneities. The low temperature resistivity upturn is observed in LSMO film, which is attributed to the spin fluctuations (Mn3+–O–Mn4+) due to thermal energy. The trilayer sample exhibits a large negative MR of (∼45%) at low temperature (5 K). It manifests consistent negative CMR effect across the whole temperature range of 5 K–210 K (MIT). The improved MR behavior of the trilayer sample as compared to the LSMO film is due to enhanced polycrystalline character of the trilayer film owing to higher grain boundary density and spin dependent scattering at both the interfaces of LSMO/γ-Fe2O3/LSMO structure.

Enhancement of spin–flop-induced magnetic hysteresis in van der Waals magnet (Fe1−xCox)5GeTe2

We have systematically studied magnetotransport properties in van der Waals (vdW) magnetic materials, (Fe1−xCox)5GeTe2, where the magnetic phase changes from the ferromagnetic with the perpendicular magnetic anisotropy (PMA; x = 0 , 0.05) or with the in-plane magnetic anisotropy (IMA; x = 0.19) to the antiferromagnetic (x = 0.46) with the PMA. We have demonstrated that such magnetic properties seen in bulk still remain even in thin film devices. An anomalous Hall resistance with magnetic hysteresis was clearly observed in the low Co substitution ( x = 0 , 0.05). The anomalous Hall effect was still observable for x = 0.19, but the magnetic hysteresis vanishes because of the IMA. In the antiferromagnetic region, there was no anomalous Hall effect in the low magnetic field range, but a clear hysteresis was observed at 2.5 T where the spin–flop transition takes place. This hysteresis can be seen only below 30 K and monotonically decreases with increasing temperature. We argue that the defects at a specific site in this system and also the resistance upturn below 30 K could be related to the hysteric behavior at the spin–flop transition. Our findings provide a recipe for the use of (Fe1−xCox)5GeTe2 with different Co substitutions to construct vdW magnetic devices.

Layer-resolved electronic behavior in a Kondo lattice system, CeAgAs2

We investigate the electronic structure of an antiferromagnetic Kondo lattice system CeAgAs2 employing hard x-ray photoemission spectroscopy. CeAgAs2, an orthorhombic variant of HfCuSi2 structure, exhibits antiferromagnetic ground state, Kondo like resistivity upturn and compensation of magnetic moments at low temperatures. The photoemission spectra obtained at different photon energies suggest termination of the cleaved surface at cis-trans-As layers. The depth-resolved data show significant surface-bulk differences in the As and Ce core level spectra. The As 2p bulk spectrum shows distinct two peaks corresponding to two different As layers. The peak at higher binding energy correspond to cis-trans-As layers and is weakly hybridized with the adjacent Ce layers. The As layers between Ce and Ag-layers possess close to trivalent configuration due to strong hybridization with the neighboring atoms and the corresponding feature appear at lower binding energy. Ce 3d core level spectra show multiple features reflecting strong Ce-As hybridization and strong correlation. Intense f 0 peak is observed in the surface spectrum while it is insignificant in the bulk. In addition, we observe a features at binding energy lower than the well-screened feature indicating the presence of additional interactions. This feature becomes more intense in the bulk spectra suggesting it to be a bulk property. Increase in temperature leads to a spectral weight transfer to higher binding energies in the core level spectra and a depletion of spectral intensity at the Fermi level as expected in a Kondo material. These results reveal interesting surface-bulk differences, complex interplay of intra- and inter-layer covalency, and electron correlation in the electronic structure of this novel Kondo lattice system.

Structural, magnetic and electrical transport properties of the sol-gel derived La1-xCaxMnO3 (0≤x≤0.3) nanoparticles

Sol-gel (SG) prepared calcium doped La1-xCaxMnO3 (0 ≤ x ≤ 0.3) nanoparticles (>35 nm) show a phase transformation from rhombohedral-R3c to orthorhombic-Pnma. The dopant concentration influences the bond length and lattice parameters and their variations as observed from the rietveld refinement. The phase stability and chemical compositions are confirmed using the Thermogravimetric and differential thermal analysis (TG-DTA) and Fourier transform infrared (FTIR) spectroscopy measurements. The latter confirms the presence of dangling bonds from the changes in the characteristic vibrational frequencies and intensities. Field emission scanning electron microscope-energy dispersive X-ray analysis (FESEM-EDAX) confirms the nano-dimension of the particles and good chemical homogeneity of the samples. The Curie temperature Tc, estimated from the field cooled magnetization curve, shifts towards room temperature (Tc = 160–270 K) with the increase of dopant concentration. The samples exhibit a clear metal to insulator transition, the temperature of which shifts to higher values (169–267 K) with increase in dopant content. With the application of an external magnetic field, local ordering of magnetic moments occurs and the evolution of a ferromagnetic metallic phase suppresses the existing paramagnetic insulating phase, decreasing the value of resistivity. Three different temperature ranges demarked in the resistivity curves are studied using different theoretical models. The observed low temperature resistivity upturn is explained on the basis of the Kondo-like model while the ferromagnetic metallic region is studied using different scattering processes like electron – electron, electron – magnon etc. The variable range and small polaron hopping (VRH and SPH) models are used in the high-temperature region data and with the aid of Holstein's relation the non-adiabatic SPH model it is found to be most suitable to understand the conductivity behavior. The temperature dependent evolution of the Griffith's like phase can explain and correlate the electric transport and magnetic properties exhibited by the samples. This highlights the evolution of Mn3+-O2--Mn4+ FM oriented networks, which form conduction channels with the lowering of temperatures. These channels mediate the enhanced conduction and helps set in long-range FM ordering in the samples/

Anomalous resistivity upturn in the van der Waals ferromagnet Fe5GeTe2

FenGeTe2 (n = 3, 4, and 5) has recently attracted increasing attention due to its two-dimensional van der Waals characteristic and high temperature ferromagnetism, which makes promises for spintronic devices. A Fe(1) split site is an important structural characteristic of Fe5GeTe2, which makes it very different from other FenGeTe2 (n = 3 and 4) systems. The local atomic disorder and short-range order can be induced by the split site. In this work, high-quality van der Waals ferromagnet Fe5GeTe2 single crystals were grown to study low-temperature transport properties. We found a resistivity upturn below 10 K. The temperature and magnetic field dependence of the resistivity are in good agreement with a combination of the theory of disorder-enhanced three-dimensional electron–electron and single-channel Kondo effect. The Kondo effect exists only at low magnetic fields B<3 T, while electron–electron interaction dominates the appearance for the low-temperature resistivity upturn. We believe that the enhanced three-dimensional electron–electron interaction in this system is induced by the local atomic structural disorder due to the split site of Fe(1). Our results indicate that the split site of Fe plays an important role for the exceptional transport properties.

Percolative superconductivity in electron-doped Sr1−xEuxCuO2+y films

Electron-doped infinite-layer Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ films over a wide doping range have been prepared epitaxially on SrTiO$_3$(001) using reactive molecular beam epitaxy. In-plane transport measurements of the single crystalline samples reveal a dome-shaped nodeless superconducting phase centered at $x$ $\sim$ 0.15, a Fermi-liquid behavior and pronounced upturn in low temperature resistivity. We show that the resistivity upturn follows square-root temperature dependence, suggesting the emergence of superconductivity via a three-dimensional percolation process. The percolative superconductivity is corroborated spectroscopically by imaging the electronic phase separation between superconducting and metallic phases with low-temperature scanning tunneling microscopy. Furthermore, we visualize interstitial and apical oxygen anions that rapidly increase in number as $x>$ 0.12, and elucidate their impacts on the superconductivity and normal-state resistivity.

Orbital selective Kondo effect in heavy fermion superconductor UTe2

Heavy fermion systems emerge from the collective Kondo effect, and their superconductivity can serve as a promising platform for realizing next-generation quantum technologies. However, it has been a great challenge to explore many-body effects in heavy fermion systems with ab-initio approaches. We computed the electronic structure of UTe2 without purposive judgements, such as intentional selection of on-site Coulomb interaction and disregarding spin-orbit coupling. We show that U-5f electrons are highly localized in the paramagnetic normal state, giving rise to the Kondo effect. It is also found that the hybridization between U-5f and U-6d predominantly in the orthorhombic ab-plane is responsible for the high-temperature Kondo effect. In contrast, the hybridization between U-5f and Te-5p along the c-axis manifests the Kondo scattering at a much lower temperature, which could be responsible for the low-temperature upturn of the c-axis resistivity. Our results show that the electron correlation in UTe2 is orbital selective, which naturally elucidates the recent experimental observations of anomalous temperature dependence of resistivity. Furthermore, we suggest that the Kondo effect is suppressed at high pressure owing to weak localization of magnetic moments, which results from enhanced U-5f electron hopping. Our discovery provides significant insight toward understanding anisotropic quantum behavior including selective re-entrant superconductivity in heavy fermion UTe2.

Resistance anomaly and linear magnetoresistance in thin flakes of itinerant ferromagnet Fe3GeTe2

Research interests in recent years have expanded into quantum materials that display novel magnetism incorporating strong correlations, topological effects, and dimensional crossovers. Fe3GeTe2 represents such a two-dimensional van der Waals platform exhibiting itinerant ferromagnetism with many intriguing properties. Up to date, most electronic transport studies on Fe3GeTe2 have been limited to its anomalous Hall responses while the longitudinal counterpart (such as magnetoresistance) remains largely unexplored. Here, we report a few unusual transport behaviors on thin flakes of Fe3GeTe2. Upon cooling to the base temperature, the sample develops a resistivity upturn that shows a crossover from a marginally –ln T to a –T 1/2 dependence, followed by a lower-temperature deviation. Moreover, we observe a negative and non-saturating linear magnetoresistance when the magnetization is parallel or antiparallel to the external magnetic field. The slope of the linear magnetoresistance also shows a nonmonotonic temperature dependence. We deduce an anomalous contribution to the magnetoresistance at low temperatures with a scaling function proportional –HT 1/2, as well as a temperature-independent linear term. Possible mechanisms that could account for our observations are discussed.

Extension of on-chip thermometry of metal strips toward sub-10 K regime

One widely employed method to study thermoelectric effects in nano- and mesoscopic systems is by utilizing on-chip metal strips. However, the standard technique loses sensitivity in the sub-Kelvin temperature regime because the resistance of metal strips saturates. Here, we report a possible solution that can extend the working point from the conventional window (10 to 300 K) down to temperatures below 10 K. This method takes advantage of the unexpected resistance up-turn at T < 10 K in gold strips, presumably due to the Kondo effect. As a demonstration, we apply this technique to study a NbSe2 flake in the superconducting regime (<6 K).

Correlated Insulating Behavior in Infinite-Layer Nickelates

Unlike their cuprate counterparts, the undoped nickelates are weak insulators without long-range antiferromagnetic order. Identifying the origin of this insulating behavior, found on both sides of the superconducting dome, is potentially a crucial step in the development of a coherent understanding of nickelate superconductivity. In this work, we study the normal-state resistivity of infinite-layer nickelates using high magnetic fields to suppress the superconductivity and examine the impact of disorder and doping on its overall temperature (T) dependence. In superconducting samples, the resistivity of Nd- and La-based nickelates continues to exhibit weakly insulating behavior with a magnitude and functional form similar to that found in underdoped electron-doped cuprates. We find a systematic evolution of the insulating behavior as a function of nominal hole doping across different rare-earth families, suggesting a pivotal role for strong electron interactions, and uncover a correlation between the suppression of the resistivity upturn and the robustness of the superconductivity. By contrast, we find very little correlation between the level of disorder and the magnitude and onset temperature of the resistivity upturn. Combining these experimental observations with previous Hall effect measurements on these two nickelate families, we consider various possible origins for this correlated insulator behavior and its evolution across their respective phase diagrams.

Electron–Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor

In disordered transition‐metal dichalcogenide (TMD) superconductor, both the strong spin‐orbit coupling (SOC) and the disorder show remarkable effects on superconductivity. However, the features of SOC and disorder are rarely detected directly. Herein, the quantum transport behaviors arising from the interplay of SOC and disorder in the TMD superconductor 1T‐NbSeTe are reported. Before entering the superconducting state, the single crystal at low temperature shows a resistivity upturn, which is T 1/2 dependent and insensitive to the applied magnetic fields. The magnetoresistance (MR) at low temperatures shows an H 1/2 dependence at high magnetic fields. The characteristics are in good agreement with the electron–electron interaction (EEI) in a disordered conductor. In addition, the upturn changes and MR at low magnetic fields suggest the contribution of the weak antilocalization (WAL) effect arising from the strong SOC in the material. Moreover, the quantitative analyses of the transport features in different samples imply anomalous disorder‐enhanced superconductivity that needs to be further understood. The results reveal the disorder‐enhanced EEI and the strong SOC‐induced WAL effect in 1T‐NbSeTe, which illustrates the resistivity minimum in the widely studied doped superconductors. The work also provides insights into the disorder effect on superconductivity.

Structure and transport properties of the quasi-one-dimensional telluride Ta1.2Os0.8Te4

We report the crystal growth, structural characterization, and physical properties of an off-stoichiometric van der Waals telluride ${\mathrm{Ta}}_{1.2}{\mathrm{Os}}_{0.8}{\mathrm{Te}}_{4}$, which is isostructural with the noncentrosymmetric ${\mathrm{WTe}}_{2}$, a prototypical type-II Weyl semimetal. Transport measurements have been carried out in magnetic fields up to 9 T. A low-temperature resistivity upturn is observed along all three crystallographic directions at zero field. The along-chain ${\ensuremath{\rho}}_{a}$ and interchain ${\ensuremath{\rho}}_{b}$ are found to increase logarithmically at low temperatures, while in the low-$T$ metallic regime, both longitudinal and transverse transports support a three-dimensional Fermi liquid ground state. As temperature is further increased, successive crossovers to electronic states of reduced dimensionality can be seen in both interchain resistivities. The transverse magnetoresistance is weak but anisotropic, the analysis of which indicates the Kohler's rule is severely violated over a large temperature range. The positive linear field dependence of Hall resistivity at selected temperatures indicates the dominance of single-band hole-type charge carriers, consistent with the results of the angle-resolved photoemission spectroscopy. Our results not only establish this transition-metal telluride family as a good system for studying various dimensional crossover phenomena, but also offer the potential for exploring topologically nontrivial phases with reduced dimensionality, given its structural similarity to ${\mathrm{WTe}}_{2}$.

Electronic manifestation of a disorder mediated metal-insulator transition in epitaxial SrRuO3 thin film

Herein, the electronic, magnetic, and transport properties of an oxygen-deficient epitaxial SrRuO3 (SRO) thin film have been investigated. The oxygen vacancies (VO) in the SRO thin-film transform a fraction of Ru4+ ions into Ru3+, resulting in an enhancement of the unit cell volume. Due to the elongated lattice parameters, the electronic bandwidth decreases and gives rise to the enhanced correlation strength. Further, distinctive effects of VO are seen in the temperature-dependent resistivity behavior [ρ(T)]. At low temperatures, the SRO thin film exhibits a resistivity minima near 48 K along with the ferromagnetic to paramagnetic transition (TC~150 K). The resistivity upturn at low temperatures is analyzed using quantum correction in the conductivity and it is found that the weak localization prevails over renormalized electron-electron interactions in the low-temperature resistivity upturn behavior of oxygen-deficient (VO) SRO thin film.

Metallic Conduction and Carrier Localization in Two-Dimensional BEDO-TTF Charge-Transfer Solid Crystals

Charge-transfer salts based on bis(ethylenedioxy)tetrathiafulvalene (BEDO-TTF or BO for short) provide a stable two-dimensional (2D) metallic state, while the electrical resistance often shows an upturn at low temperatures below ~10 K. Such 2D weak carrier localization was first recognized for BO salts in the Langmuir–Blodgett films fabricated with fatty acids; however, it has not been characterized in charge-transfer solid crystals. In this paper, we discuss the carrier localization of two crystalline BO charge-transfer salts with or without magnetic ions at low temperatures through the analysis of the weak negative magnetoresistance. The phase coherence lengths deduced with temperature dependence are largely dominated by the electron–electron scattering mechanism. These results indicate that the resistivity upturn at low temperatures is caused by the 2D weak localization. Disorders causing elastic scattering within the metallic domains, such as those of terminal ethylene groups, should be suppressed to prevent the localization.

Observation of novel coexistence of Kondo effect and room temperature magnetism in AlN/Al/AlN trilayer thin film

In this work for the first time, we are reporting the unusual observation of the Kondo effect with the coexistence of room temperature ferromagnetism in AlN/Al/AlN trilayer thin film. The grown film shows resistivity minimum at a temperature of ∼48K, which shifts to the lower temperature on the application of magnetic fields. After considering various possibilities for an upturn in resistivity, we found that the Kondo scattering is responsible for upturn at low temperature. The simultaneous presence of ferromagnetism and Kondo scattering is explained by spatial variation of nitrogen vacancy defects from the film surface to the Al sandwich layer. Furthermore, magneto-transport properties of the film measured at different temperature exhibits both negative and positive components described by localized magnetic moment model for the spin scattering of carriers and two-band model, respectively. This work provides insight into the novel co-existence of ferromagnetism and Kondo effect in crystalline AlN.

Charge transport mechanisms in monovalent doped mixed valent manganites

In this communication, we report the results of the studies on structural and transport properties of monovalent Na+ doped La1–xNaxMnO3 (LNMO; x = 0.00, 0.05, 0.10, 0.15, 0.20, 0.25 and 0.30) manganites synthesized by conventional ceramic method. X-ray diffraction (XRD) and Rietveld refinements reveal the single phasic nature of LNMO manganites without any detectable impurity within the measurement range. Temperature dependent resistivity, under different applied magnetic fields, has been performed on LNMO samples. Samples understudy exhibit metal to insulator (semiconductor) transition at temperature TP which is strongly influenced by the substitution of Na+ at La3+ site. r – T plots also exhibit resistivity upturn behavior at low temperature well below 40K under all the applied fields. Variation in TP and resistivity has been discussed in the context of the competition between the transport favoring tolerance factor and zener double exchange (ZDE) mechanism and transport degrading Jahn–Teller (JT) and size variance effects. In order to understand the mechanisms responsible for the charge transport in metallic and semiconducting regions and to explore the possible electronic processes responsible for the observed low temperature resistivity minima in all the presently studied LNMO manganites, various models have been employed. It has been found that VRH mechanism gets successfully fitted to the resistivity data in the semiconducting region while ZDE polynomial law is responsible for the charge conduction in metallic region for all the presently studied LNMO samples. A strong dependence of activation energy on the Na+ – content as well as applied magnetic field has been discussed in the context of variation and interrelations between the structural parameters. Charge conduction in metallic region has been discussed in the light of electron–phonon interactions which is influenced by the Na+ – content and applied magnetic field. Electrostatic blockade model has been employed to understand the low temperature resistivity minima behavior. Blocking energy for the charge carriers shows a dependence on the magnetic energy provided to the charge carriers. Present study can be useful to understand and to control the charge conduction in the manganites and hence to design the manganite based thin film devices for various spintronic applications.

Anomalous de-phasing of quantum coherence phenomenon in superconductor/topological insulator (NbN/Bi1.95Sb0.05Se3) heterostructure

The proximity-induced changes in magneto-transport properties of a topological insulator and a superconductor in an NbN/Bi1.95Sb0.05Se3 heterostructure are reported. Mechanically exfoliated single-crystal flake of Bi1.95Sb0.05Se3 topological insulator (TI) is partially covered with a ∼150 nm thick niobium nitride superconductor using DC magnetron sputtering. The temperature-dependent resistance, R(T) across the junction, shows double transitions at 11.5 K and 8 K, followed by the resistance upturn. MR on NbN covered region exhibit the typical BC2 behavior. At T < 20 K, the uncovered TI part exhibits weak anti-localization (WAL) for B < ± 1 T and a transition to negative MR at B > ± 3.5 T, while the junction shows only the WAL feature. As the temperature increases, the classical B2 dependence is retrieved on the TI and across the junction. The temperature coefficient of the phase coherence length obtained from the Hikami Larkin Nagaoka (HLN) analysis changes sign at the superconducting transition TC, evincing the de-phasing of the quantum coherence WAL phenomenon by the proximity of a superconductor. In contrast, the BC2 behavior of the superconductor is less affected by TI.

Emergence of orbital two-channel Kondo effect in epitaxial TiN thin films

The continual scaledown and stringent defect control in electronic devices are opening up frontiers in Kondo effect-a powerful testbed for probing magnetic impurity coupling to a continuum of electronic states. In disordered ferromagnets, degenerate quantum states like two-level systems (TLS) with a pseudo-half spin can couple with the continuum to mimic Kondo physics, creating the orbital two-channel Kondo (2CK) effect below the characteristic Kondo temperature (TK). By employing vacuum-annealing to inject ∼12 at.% nitrogen vacancies (VN) in TiN1-x films, we generated room-temperature ferromagnetic ordering with 13.6 emu g−1 saturation magnetization. The transport characteristics exhibited non-Fermi-liquid (NFL) behavior below TK of 20.2 K. The orbital 2CK effect is signified by a clear transition from logarithmic (T < T0∼40 K), to square-root dependence (T < TK) and subsequent deviation from it (T < TD∼10 K) in resistivity upturn behavior in three distinct low-temperature regimes. By controlling VN, we establish the necessity of ferromagnetism and ultrafast tunneling centers for generating orbital 2CK effect and NFL behavior in disordered metallic systems, extending their scope in non-magnetic nanomaterials.

Extremely large magnetoresistance in the “ordinary” metal ReO3

The extremely large magnetoresistance (XMR) observed in many topologically nontrivial and trivial semimetals has attracted much attention in relation to its underlying physical mechanism. In this paper, by combining the band structure and Fermi surface (FS) calculations with the Hall resistivity and de Haas-Van Alphen (dHvA) oscillation measurements, we studied the anisotropy of magnetoresistance (MR) of ReO$_3$ with a simple cubic structure, an "ordinary" nonmagnetic metal considered previously. We found that ReO$_3$ exhibits almost all the characteristics of XMR semimetals: the nearly quadratic field dependence of MR, a field-induced upturn in resistivity followed by a plateau at low temperatures, high mobilities of charge carriers. It was found that for magnetic field \emph{H} applied along the \emph{c} axis, the MR exhibits an unsaturated \emph{H}$^{1.75}$ dependence, which was argued to arise from the complete carrier compensation supported by the Hall resistivity measurements. For \emph{H} applied along the direction of 15$^\circ$ relative to the \emph{c} axis, an unsaturated \emph{H}$^{1.90}$ dependence of MR up to 9.43~$\times$~$10^3$$\%$ at 10~K and 9~T was observed, which was explained by the existence of electron open orbits extending along the $k_{x}$ direction. Two mechanisms responsible for XMR observed usually in the semimetals occur also in the simple metal ReO$_3$ due to its peculiar FS (two closed electron pockets and one open electron pocket), once again indicating that the details of FS topology are a key factor for the observed XMR in materials.