Repulsive Impurity Doped Quantum Dot Research Articles

Influence of Damped Propagation of Dopant on the Static Linear and Nonlinear Polarizabilities of Quantum Dot

We investigate the profiles of diagonal components of static linear (xx and yy), and first nonlinear (xxx and yyy), optical responses of repulsive impurity doped quantum dots. The dopant impurity potential assumes Gaussian form. The dopant is considered to be propagating under damped condition which is otherwise linear inherently. The study principally puts emphasis on investigating the role of damping strength on the static polarizability components. In view of this the doped dot is exposed to a static electric field of given intensity. The damping strength interplays with the confinement potentials and fabricate the polarizability components delicately through the emergence of maximization, minimization, and saturation. Also, the difference in the extent of inherent confinement in x and y-directions has been found to modulate the polarizability components.

Coupled influence of noise and damped propagation of impurity on linear and nonlinear polarizabilities of doped quantum dots

We investigate the profiles of diagonal components of static and frequency-dependent linear, first, and second nonlinear polarizabilities of repulsive impurity doped quantum dot. We have considered propagation of dopant within an environment that damps the motion. Simultaneous presence of noise inherent to the system has also been considered. The dopant has a Gaussian potential and noise considered is a Gaussian white noise. The doped system is exposed to an external electric field which could be static or time-dependent. Noise undergoes direct coupling with damping and the noise-damping coupling strength appears to be a crucial parameter that designs the profiles of polarizability components. This happens because the coupling strength modulates the dispersive and asymmetric character of the system. The frequency of external field brings about additional features in the profiles of polarizability components. The present investigation highlights some useful features in the optical properties of doped quantum dots.

Exploring static and frequency-dependent third nonlinear polarizability of doped quantum dots driven by Gaussian white noise

We investigate the profiles of diagonal components of static and frequency-dependent third nonlinear (, ) polarizability of repulsive impurity doped quantum dots driven by noise. The dopant impurity potential is represented by a Gaussian function. We have invoked Gaussian white noise applied additively and multiplicatively (in Stratonovich sense). In order to determine the polarizability components, the doped system is subject to an external electric field of given intensity, which may be static or time-dependent. The dopant location and the noise characteristics delicately tailor the polarizability components and produce good number of interesting outcomes. Quiet significantly, we have found ineffectiveness of the noise strength in influencing the polarizability components when the noise is applied additively. However, the multiplicative noise behaves otherwise and gives rise to additional interesting features in the polarizability profiles. The multiplicative noise even causes noticeable enhancement in the magnitude of the polarizability components. The present enquiry gains importance in view of the fact that noise seriously affects the optical properties of doped quantum dot devices. The findings could be relevant within the purview of noise driven optical properties of doped quantum dot systems.

Influence of damped propagation of dopant on the static and frequency-dependent third nonlinear polarizability of quantum dot

We investigate the profiles of diagonal components of static and frequency-dependent third nonlinear (γxxxx and γyyyy) polarizability of repulsive impurity doped quantum dots. The dopant impurity potential takes a Gaussian form. We have considered propagation of the dopant within an environment that damps the motion. The study focuses on role of damping strength on the diagonal components of both static and frequency-dependent third nonlinear polarizability of the doped system. The doped system is further exposed to an external electric field of given intensity. Damping subtly modulates the dot–impurity interaction and fabricates the polarizability components in a noticeable manner.

Influence of damping on the frequency-dependent polarizabilities of doped quantum dot

We investigate the profiles of diagonal components of frequency-dependent linear (αxx and αyy), and first nonlinear (βxxx and βyyy) optical response of repulsive impurity doped quantum dots. The dopant impurity potential chosen assumes Gaussian form. The study principally focuses on investigating the role of damping on the polarizability components. In view of this the dopant is considered to be propagating under damped condition which is otherwise linear inherently. The frequency-dependent polarizabilities are then analyzed by placing the doped dot to a periodically oscillating external electric field of given intensity. The damping strength, in conjunction with external oscillation frequency and confinement potentials, fabricate the polarizability components in a fascinating manner which is adorned with emergence of maximization, minimization, and saturation. The discrimination in the values of the polarizability components in x and y-directions has also been addressed in the present context.

Influence of Gaussian white noise on the frequency-dependent linear polarizability of doped quantum dot

We investigate the profiles of diagonal components of frequency-dependent linear (αxx and αyy) optical response of repulsive impurity doped quantum dots. The dopant impurity potential chosen assumes Gaussian form. The study principally puts emphasis on investigating the role of noise on the polarizability components. In view of this we have exploited Gaussian white noise containing additive and multiplicative characteristics (in Stratonovich sense). The frequency-dependent polarizabilities are studied by exposing the doped dot to a periodically oscillating external electric field of given intensity. The oscillation frequency, confinement potentials, dopant location, and above all, the noise characteristics tune the linear polarizability components in a subtle manner. Whereas the additive noise fails to have any impact on the polarizabilities, the multiplicative noise influences them delicately and gives rise to additional interesting features.

Influence of Gaussian white noise on the frequency-dependent first nonlinear polarizability of doped quantum dot

We investigate the profiles of diagonal components of frequency-dependent first nonlinear (βxxx and βyyy) optical response of repulsive impurity doped quantum dots. We have assumed a Gaussian function to represent the dopant impurity potential. This study primarily addresses the role of noise on the polarizability components. We have invoked Gaussian white noise consisting of additive and multiplicative characteristics (in Stratonovich sense). The doped system has been subjected to an oscillating electric field of given intensity, and the frequency-dependent first nonlinear polarizabilities are computed. The noise characteristics are manifested in an interesting way in the nonlinear polarizability components. In case of additive noise, the noise strength remains practically ineffective in influencing the optical responses. The situation completely changes with the replacement of additive noise by its multiplicative analog. The replacement enhances the nonlinear optical response dramatically and also causes their maximization at some typical value of noise strength that depends on oscillation frequency.

Influence of noise shape on excitation kinetics of impurity doped quantum dots

Noise influences the functioning of nanomaterials and optoelectronic materials to a significant extent. We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by the application of external white noise with special reference to noise shape. We have exploited white noise of Gaussian and Lorentzian shapes. The said shapes in effect alter the range of spatial correlation of the white noise. We have considered both additive and multiplicative noise (in Stratonovich sense). In conjunction with the shape, the noise strength and the dopant location also fabricate the kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be prominently different. Interestingly as well as surprisingly enough, in case of additive noise, the noise strength does not affect the kinetics. The investigation reveals that the Lorentzian shape invites more diversities in the excitation kinetics when noise strength and dopant location are varied over a range than the Gaussian one. The Lorentzian shape causes a surge in the excitation rate over the other shape. The present investigation provides some useful perceptions of the functioning of mesoscopic devices where noise plays some profound role. Implications and influences : The present work assumes to have significance in engineering and technological applications of quantum dot nanodevices. Since in most of the devices noise plays some important role, the present study could also sincerely motivate further research on optical properties of those devices in presence of noise.

Coupled influence of damped propagation of dopant and oscillatory confinement sources on excitation kinetics of doped quantum dot

We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by oscillations of various confinement sources. The dopant is considered to be propagating under damped condition. For simplicity, we have considered an inherently linear motion of the dopant and the impurity potential has been assumed to have a Gaussian nature. The damping strength and the oscillation frequencies of dot confinement sources of electric and magnetic origin have been found to fabricate the said kinetics in a delicate way. The present study sheds light on how the individual or combined oscillations of different confinement sources could design the excitation kinetics in presence of damping.

Excitation kinetics of impurity doped quantum dot driven by Gaussian white noise: Interplay with external field

We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by simultaneous application of Gaussian white noise and external sinusoidal field. We have considered both additive and multiplicative noise (in Stratonovich sense). The combined influences of noise strength (ζ) and the field intensity (∊) have been capsuled by invoking their ratio (η). The said ratio and the dopant location have been found to fabricate the kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be widely different. The investigation reveals emergence of maximization/minimization and saturation in the excitation kinetics as a result of complex interplay between η and the dopant coordinate (r0). The present investigation is believed to provide some useful insights in the functioning of mesoscopic devices where noise plays some significant role.

Coupled influence of damped propagation of dopant and external oscillatory field on excitation kinetics of doped quantum dot

We investigate the excitation kinetics of a repulsive impurity doped quantum dot exposed to external oscillatory field. The dopant is considered to be propagating under damped condition. Such a propagation bears importance because of its intimate connection with impurity drift in nanodevices. For simplicity, we have considered an inherently linear motion of the dopant and impurity potential has been assumed to have a Gaussian nature. The interplay between the damping strength and the characteristic parameters of external field has been found to fabricate the kinetics in a delicate way. The present investigation could provide some useful perceptions in nanoelectronic applications.

Additive Gaussian white noise modulated excitation kinetics of impurity doped quantum dots: Role of confinement sources

We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by the application of additive Gaussian white noise. The noise and the dot confinement sources of electric and magnetic origin have been found to fabricate the said kinetics in a delicate way. In addition to this the dopant location also plays some prominent role. The present study sheds light on how the individual or combined variation of different confinement sources could design the excitation kinetics in presence of noise. The investigation reveals emergence of maximization and saturation in the excitation kinetics as a result of complex interplay between various parameters that affect the kinetics. The phase space plots are often invoked and they lend credence to the findings. The present investigation is believed to provide some useful perceptions of the functioning of mesoscopic systems where noise plays some profound role.

Modulation of excitation kinetics of impurity doped quantum dots by the interplay between confinement sources and multiplicative Gaussian white noise

We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by the application of multiplicative Gaussian white noise. The noise strength and the dot confinement sources of electric and magnetic origin have been found to produce the said kinetics in a subtle way. In addition to this the dopant location also plays some crucial role. The present study sheds light on how the individual or combined variation of different confinement sources could design the excitation kinetics in presence of noise. The investigation reveals maximization and saturation in the excitation kinetics as a result of complex interplay between the confinement potentials of the dot, the dopant location, and the noise strength. The present investigation is believed to provide some useful perceptions of the functioning of mesoscopic systems where noise plays some profound role.

Excitation kinetics of quantum dot induced by damped propagation of dopant: Role of confinement potential and magnetic field

We investigate the excitation kinetics of a repulsive impurity doped quantum dot as the dopant is propagating. The study assumes importance because of its intimate connection with impurity drift in nanodevices. The problem has been made more realistic by considering the dopant propagation to be damped. For simplicity, we have considered an inherently linear motion of the dopant with a Gaussian potential. The damping strength and the dot confinement sources of electric and magnetic origin have been found to fabricate the said kinetics in a delicate way. The present study sheds light on how the individual or combined variation of different confinement sources could design the excitation kinetics in presence of damping. However, in the overdamped region, we find attainment of stabilization in the excitation rate. The present investigation is believed to provide some useful perceptions in the phenomenon of damping that has potential importance in nanoelectronic applications.

Influence of Damped Propagation of Dopant on the Excitation Kinetics of Doped Quantum Dots

Excitation in quantum dots is a hotly pursued phenomenon. Realizing it, we investigate the excitation kinetics of a repulsive impurity doped quantum dot as the dopant is propagating. Such a propagation is assumed to be important because of its close connection with impurity drift in nanodevices. The problem has been made more realistic by considering the dopant propagation to be damped. For simplicity, we have considered an inherently linear propagation of the dopant, and the impurity potential has been assumed to have a Gaussian nature. The damping strength and the initial spatial stretch of the dopant have been found to fabricate the said kinetics in a delicate way. However, in the overdamped region, we find attainment of stabilization in the excitation rate invariably. Determination of average accelerating force imparted onto the propagating dopant seems to consolidate the findings. The present investigation is believed to provide some useful insight into the phenomenon of damping that has potential im...

Excitation Kinetics of Impurity Doped Quantum Dot Triggered by Gaussian White Noise

We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by the application of Gaussian white noise. In view of a comprehensive research we have considered both additive and multiplicative noise (in Stratonovich sense). The noise strength and the dopant location have been found to fabricate the said kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be prominently different. The investigation reveals emergence of maximization and saturation in the excitation kinetics as a result of complex interplay between various parameters that affect the kinetics. The present investigation is believed to provide some useful perceptions of the functioning of mesoscopic systems where noise plays some profound role.

Influence of Oscillatory Impurity Potential and Concurrent Gasping of Impurity Spread on Excitation Profile of Doped Quantum Dots

Excitation in quantum dots is an important phenomenon. Realizing the importance we investigate the excitation behavior of a repulsive impurity-doped quantum dot induced by simultaneous oscillations of impurity potential and spatial stretch of impurity domain. The impurity potential has been assumed to have a Gaussian nature. The ratio of two oscillations (η) has been exploited to understand the nature of excitation rate. Indeed it has been found that the said ratio could fabricate the excitation in a remarkable way. The present study also indicates attainment of stabilization in the excitation rate as soon as η surpasses a threshold value regardless of the dopant location. However, within the stabilization zone we also observe maximization in the excitation rate at some typical location of dopant incorporation. The critical analysis of pertinent impurity parameters provides important perception about the physics behind the excitation process.

Influence of external field and consequent impurity breathing on excitation profile of doped quantum dots

Excitation in quantum dots is an important phenomenon. Realizing the importance we investigate the excitation behavior of a repulsive impurity doped quantum dot induced by an external oscillatory field. As an obvious consequence the simultaneous oscillation of spatial stretch of impurity domain has also been taken into account. The impurity potential has been assumed to have a Gaussian nature. The ratio of two oscillations (η) has been exploited to understand the nature of excitation. Indeed it has been found that the said ratio could orchestrate the excitation in a truly elegant way. Apart from the ratio, the dopant location also plays some meaningful role towards modulating the excitation rate. The present study also indicates the attainment of stabilization in the excitation rate as soon as η surpasses a threshold value irrespective of the dopant location. Moreover, prior to the onset of stabilization we also envisage minimization in the excitation rate at some typical η values depending on the dopant location. The critical analysis of pertinent impurity parameters provides important perception about the physics behind the excitation process.

Influence of pulse shape in modulating excitation kinetics of impurity doped quantum dots

Excitation in quantum dots is an important phenomenon. Realizing the importance we explore the excitation kinetics of a repulsive impurity doped quantum dot induced by an electromagnetic pulsed field of various pulse shapes. The pulsed field has been applied along both x and y directions to the doped quantum dot. The impurity potential has been assumed to have a Gaussian nature. The investigation reveals the sensitivity of the typical shape of the pulse, alongside the influences of dopant location and number of pulse towards modulating the excitation rate. At first we have concentrated on understanding the role of number of pulses fed into the system on the kinetics at three fixed dopant locations. Next, we have given our thrust in analyzing the exclusive role of dopant location on excitation kinetics at a fixed pulsed number. In both the cases the typical pulse shapes announce its role on excitation kinetics unhesitatingly through a number of observations. The present study has also indicated enough evidence of change in the mutual dominance of several factors that could favor and impede excitation accompanying the shift of dopant location. Importantly, those factors also depend severely on the pulse shape. The pulse shape interferes delicately with the interplay between impurity location and number of pulses fed into the system and emerges as an important ingredient that can engineer the excitation kinetics.

Influence of impurity propagation and concomitant enhancement of impurity spread on excitation profile of doped quantum dots

We investigate the excitation behavior of a repulsive impurity doped quantum dot under the combined influence of dopant drift and associated time variation in its spatial spread. We have considered Gaussian impurity centers. In order to make the investigation rational, the time-dependence of the spatial spread has been connected with the instantaneous location of the dopant. Looking at the general applicability of the findings, we have considered linear and random propagation of the dopant. For a systematic analysis, we have proceeded in a stepwise manner during the investigation. Thus, at first we have not considered the time-dependence of spatial spread of dopant and concentrated only on the dopant drift. Subsequently, we have introduced time-dependence in the spatial spread and observed the outcome. Although the incorporation of time-dependence in spatial stretch makes the calculation much more tedious and involved, yet this adequately describes the role played by the time-varying impurity domain exclusively in modulating the excitation rate. The varied nature of dopant propagation interplays delicately with the time-dependent modulation of its spatial stretch giving some important insight into the physics underlying the excitation process.