Abstract
Excitation in quantum dots is an important phenomenon. Realizing the importance we investigate the excitation behavior of a repulsive impurity-doped quantum dot induced by simultaneous oscillations of impurity potential and spatial stretch of impurity domain. The impurity potential has been assumed to have a Gaussian nature. The ratio of two oscillations (η) has been exploited to understand the nature of excitation rate. Indeed it has been found that the said ratio could fabricate the excitation in a remarkable way. The present study also indicates attainment of stabilization in the excitation rate as soon as η surpasses a threshold value regardless of the dopant location. However, within the stabilization zone we also observe maximization in the excitation rate at some typical location of dopant incorporation. The critical analysis of pertinent impurity parameters provides important perception about the physics behind the excitation process.
Highlights
Nowadays we frequently encounter a plethora of theoretical and experimental researches on impurity states in lowdimensional heterostructures [1]
We have considered a magnetic field of mili Tesla order
The excitation profile of repulsive impurity-doped quantum dots triggered by simultaneous oscillations of impurity potential, and impurity spread unveils noteworthy features
Summary
Nowadays we frequently encounter a plethora of theoretical and experimental researches on impurity states in lowdimensional heterostructures [1]. The quantized properties of quantum dots doped with impurity have generated new perspectives and subtleties in the field of applied physics. This happens because of the interplay between various confinement sources with impurity potentials [2]. We find a vast literature comprising of good theoretical studies on impurity states [16,17,18,19,20,21]. There are some excellent experimental works which include the mechanism and control of dopant incorporation [22, 23]
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