In this work, combining macroscopic and nanoscopic analyses, we explored the role of domain structure and relative domain-electric field orientations in the polarization reorientation process in polycrystalline ferroelectric thin films. Results of macroscopic ferroelectric and dielectric measurements were interpreted considering a detailed characterization of the domain structure, performed by piezoresponse force microscopy (PFM). A phenomenological model was utilized to obtain macroscopic parameters related to the polarization reorientation, domain structure, and domain wall mobility. We investigated tetragonal Pb(Zr, Ti)O3 (PZT) thin films with preferential in-plane polarization ([100] direction) and mixed in-plane and out of plane polarization ([100] and 〈110〉 directions). Results revealed similar domain structures for the films, consisting of a high density of stripe domains, with a width of 10 – 15 nm, separated by 90∘ walls. With the application of an electric field, such a structure is rearranged but maintained a high density of 90∘ walls after removing the field. Combining the macroscopic and nanoscopic analyses, we found that the relative polarization orientation of the domains significantly impacts the reorientation process. For the [100] oriented film, the reorientation occurs mainly by the rotation of a-domains. For these films, the c-domain configuration is very unstable, resulting in a high backswitching of the polarization after removing the field. On the other side, the increase of the 〈110〉 film orientation represents an increase of domains with the out-of-plane component of polarization that can reorient by 180∘ or 90∘ switching and stabilize. This results in a more abrupt reorientation process and a reduction of the backswitching effect. The parameters obtained with the phenomenological model are in good agreement with the response observed by PFM and better explain the macroscopic measurements.