Wire Bond Reliability Research Articles

Reliability of Cu wire bonds in microelectronic packages

In this study the thermo-mechanical response of 25μm Cu wire bonds in an LQFP-EPad (Low Profile Quad Flat-Exposed Pad) package was investigated by numerical and experimental means. The aim was to develop a methodology for fast evaluation of the packages, with focus on wire bond fatigue, by combining finite element analysis (FEA) and mechanical fatigue testing. The investigations included the following steps: (i) simulation of the warpage induced displacements in the encapsulated LQFP-176-Epad package due to temperature changes, (ii) reproducing the thermally induced stresses in the wire bond loops in an unmolded (non-encapsulated) LQFP package using an accelerated multiaxial mechanical fatigue testing set-up under the displacement amplitudes determined in case (i) and determination of the loading cycles to failure (Nf), (iii) FEA of the experiments performed in (ii) based on the boundary conditions determined in (i) to calculate the states of stress and strain in the wire bonds subjected to multiaxial mechanical cyclic loading. Our investigations confirm that thermal and mechanical cyclic loading results in occurrence of high plastic strains at the heat affected zone (HAZ) above the nail-head, which may lead to fatigue failure of the wire bonds in the packages. The lifetime of wire bonds show a proportional relation between the location and angle of the wire bond to the direction of loading. The calculated accumulated plastic strain in the HAZ was correlated to the experimentally determined Nf values based on the volume weighted averaging (VWA) approached and presented in a lifetime diagram (∆d - Nf) for reliability assessment of Cu wire bonds. The described accelerated test method could be used as a rapid qualification test for the determination of the lifetimes of wire bonds at different positions on the chip as well as for related improvements of package design.

Reliability of Heavy Gage Aluminum Wire-bonds under High Temperature Aging

Abstract Thick aluminum (Al) wedge bonds have been widely used in analog microelectronic packages due their lower cost, ease of use and excellent thermal and electrical performance. Reliability of thick Al wedge bonds on bare copper (Cu) leadframes under high temperature aging conditions has not been studied at a fundamental level in the past. This study investigates the reliability performance of Al wedge bonds on bare Cu surfaces under isothermal aging conditions specified by the automotive grade product qualification requirements. Results obtained show that Al/Cu intermetallic formed at the interface is detrimental to the mechanical and electrical package reliability. Plating on the leadframe has been evaluated as a potential mitigation to prevent intermetallic growth and hence improve the overall wedge bond and package reliability under high temperature reliability testing conditions. Significant improvement in the wedge bond and package reliability was achieved by using nickel plating under the wedge bonds. The results presented in this study can be used to design a more robust package capable of meeting stringent automotive grade requirements.

Mechanical Interlocking on Leadframe Surface for Bondability of Au Wedge Bond

This work is a contribution towards the understanding of wire bond integrity and reliability in relation to their microstructural and mechanical properties in semiconductor packaging.The effect of surface roughness and hardness of leadframe on the bondability of Au wedge bond still requires detail analysis. Two type of leadframes namely leadframe A and leadframe B were chosen and scanning electron microscope (SEM) and optical microscope were used to inspect the surface morphology of leadframes and the quality of created Au wedge bond after wire bonding process. It was found that there were significant differences in the surface morphologies between these two leadframes. The atomic force microscopy (AFM) which was utilized to measure the average roughness, Ra of lead finger confirms that leadframe A has the highest Ra with value of 166.46 nm compared to that of leadframe B with value of 85.89 nm. While hardness value of different lead finger from the selected leadframe A and B obtained using Vicker microhardness tester are 180.9 VH and 154.2VH respectively.

Microstructural Indicators for Prognostication of Copper–Aluminum Wire Bond Reliability Under High-Temperature Storage and Temperature Humidity

Gold wire bonding has been widely used as the first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for an alternative to the gold wire used in wire bonding and the transition to a copper wire bonding technology. Potential advantages of transition to a Cu–Al wire bond system include low cost of copper wire, lower thermal resistivity, lower electrical resistivity, higher deformation strength, damage during ultrasonic squeeze, and stability compared with gold wire. However, the transition to the copper wire brings along some tradeoffs, including poor corrosion resistance, narrow process window, higher hardness, and potential for cratering. Formation of excessive Cu–Al intermetallics may increase the electrical resistance and reduce the mechanical bonding strength. Current state of the art for studying the Cu–Al system focuses on the accumulation of statistically significant number of failures under accelerated testing. In this paper, a new approach has been developed to identify the occurrence of impending apparently random defect fall-outs and premature failures observed in the Cu–Al wire bond system. The use of intermetallic thickness, composition, and corrosion as a leading indicator of failure for the assessment of the remaining useful life for Cu–Al wire bond interconnects has been studied under exposure to high temperature. Damage in the wire bonds has been studied using an X-ray micro-Computed Tomography (CT). Microstructure evolution was studied under the isothermal aging conditions of 150 °C, 175 °C, and 200 °C until failure. Activation energy was calculated using the growth rate of intermetallic at different temperatures. An effect of temperature and humidity on a Cu–Al wire bond system was studied using the Parr bomb technique at different elevated temperature and humidity conditions (110 °C/100%RH, 120 °C/100%RH, and 130 °C/100%RH), and a failure mechanism was developed. The present methodology uses the evolution of the intermetallic compound thickness and composition in conjunction with the Levenberg–Marquardt algorithm to identify accrued damage in wire bond subjected to thermal aging. The proposed method can be used for a quick assessment of Cu–Al parts to ensure manufactured part consistency through sampling.

Interface reliability and lifetime prediction of heavy aluminum wire bonds

In this study a high frequency mechanical fatigue testing procedure for evaluation of interfacial reliability of heavy wire bonds in power semiconductors is presented. A displacement controlled mechanical shear testing set-up working at a variable frequency of a few Hertz up to 10kHz is used to assess the interfacial fatigue resistance of heavy Al wire bond in IGBT devices. In addition, power cyclic tests were conducted on IGBT modules for in-situ measurement of the temperature distribution in the devices and determination of the thermally induced displacements in the wire bond loops. Finite Element Analysis was conducted to calculate the correlation between the thermally and mechanically induced interfacial stresses in the wire bonds. These stress values were converted into equivalent junction temperature swings (ΔTj) in the devices based on which lifetime curves at different testing frequencies were obtained. Comparison of the fatigue life curves obtained at mechanical testing frequencies of up to 200Hz with the power cycling data related to the wire bond lift-off failure revealed a very good conformity in the ranges of 50 to 160K. A lifetime prediction model for Al wire bonds in IGBT modules is suggested by which the loading cycles to failure can be obtained as a function of ΔTj and the mechanical testing frequency. The proposed accelerated shear fatigue testing procedure can be applied for rapid assessment of a variety of interconnects with different geometries and material combinations. Decoupling of the concurrent failure mechanisms and separation of the thermal, mechanical and environmental stress factors allows a more focused and efficient investigation of the interfaces in the devices.

Effects of ball bond diameter on wire bond reliability for automotive application

Purpose – The purpose of this paper is to investigate the reliability of wire bonds with three varying ball bond diameters, which are ball bonded with three different sizes of gold wires in light-emitting diode (LED) package under high-temperature environment. In automotive applications, “lifted ball bond” issue is a potential critical point for LED device reliability, as the wire bonds are usually stressed under high operating temperature during their lifetime. Moreover, the reliability of wire bonds in recent LED production has fallen under scrutiny due to the practice of reducing wire diameters to cut down production costs. Design/methodology/approach – Three gold wires with sizes of 2, 1.5 and 1 mm were ball bonded on the LED chip bond pad via thermosonic wire bonding method to produce three different ball bond diameters, that is, 140, 120 and 100 μm, respectively. The reliability of these wire bond samples was then studied by performing isothermal aging at 200°C for the time interval of 30, 100 and 500 hours. To validate hypotheses based on the experimental data, COMSOL Multiphysics simulation was also applied to study the thermal stress distribution of wire bond under an elevated temperature. Findings – Experimental results show that the interfacial adhesion of wire bond degrades significantly after aging at 200°C for 500 hours, and the rate of interfacial degradation was found to be more rapid in the wire bond with smaller ball bond diameter. Experimental results also show that ball bonds randomly elongate along an axis and deforms into elliptical shapes after isothermal aging, and ball bonds with smaller diameters develop more obvious elongations. This observation has not been reported in any previous studies. Simulation results show that higher thermal stress is induced in the wire bond with the decrease of ball bond diameter. Practical implications – The reliability study of this paper provides measurements and explanation on the effects of wire diameter downsizing in wire bonds for automotive application. This is applicable as a reliability reference for industries who intend to reduce their production costs. Other than that, the analysis method of thermal stresses using COMSOL Multiphysics simulations can be extended by other COMSOL Multiphysics users in the future. Originality/value – To resolve “lifted ball bond” issue, optimization of the bond pad surface quality and the wire bond parameter has been studied and reported in many studies, but the influence of ball bond diameter on wire bond reliability is rarely focused. Moreover, the observation of ball bonds randomly elongate and deform more into elliptical shape, and ball bond with smaller diameter has the highest elongation after isothermal aging also still has not been reported in any previous studies.

Corrosion reliability of copper wirebond (CuWB) packages-Impact of voltage and corrosive ions from packaging materials

Reliability of electronic devices used in extreme and harsh conditions such as in automotive applications is often associated with prevention of corrosion at the interfaces of dissimilar interconnect metals and of metal (Al or Cu) bonding pads. Packaging materials, especially molding compounds, contain several ionic components and can uptake certain level of moisture to provide electrolytic conditions to initiate corrosion processes. Probability of occurrence of corrosion in devices with high voltage applications is of special interest as many analog devices operates at higher voltages and with new CuWB packages there is a higher susceptibility of corrosive failures. This paper examines the impact of voltage on the mold compound compatibility with CuWB packages up to 65 V. Bias HAST reliability evaluation of various mold compounds at different voltages will be described. Corrosion of bonding pad (Al) and at the Al-Cu intermetallic compound interface was observed in the presence of certain ions present in mold compounds. Even though current mold compounds are “green”, the allowable amounts of halide ions can far exceed the ppm limit to prevent CuWB corrosive failures. Bromide ions are known to be very corrosive to metals. Br ions are still present in some mold compounds. The impact of the Br ion on CuWB reliability will be described. Additive impact of Br ions in presence of Cl will be examined. Another corrosive component present in many mold compounds, sulfur compounds, also can be corrosive under certain reliability stress conditions. Difference in corrosion behavior of Cu and Pd –Cu wirebonded packages due to sulfur compounds will be presented. Corrosive impact of high levels of Cl on the Al pad corrosion leading thick aluminum oxide growth and reliability failures will be discussed.

Reliability of copper wire bonds on a novel over-pad metallization

Wire bonding technology is used in most semiconductor products. Recently, high gold prices have forced semiconductor manufacturers to replace Au wires with Cu wires. Because Cu wire bonds are vulnerable to high temperature and humidity, they remain unpopular in automotive and industrial applications with narrow-bond-pad pitches and small deformed ball diameters. To avoid forming the corrosive Cu-rich intermetallic compound Cu9Al4, the use of a Ni/Pd(/Au) over-pad metallization (OPM) structure produced by electroless plating on the Al metallization has been proposed. However, certain technical issues must be overcome, such as variations in the purity and thickness of the plating. To tackle these issues, a novel OPM structure produced by physical vapor deposition is proposed and evaluated in this study.

Microstructural evolution of ultrasonic-bonded aluminum wires

The evolution of microstructural gradients, especially crystallographic texture gradients, after ultrasonic wire bonding process and after active power cycling (APC) of high purity, heavy aluminum (Al) wires is studied by electron backscatter diffraction (EBSD) and nanoindentation. The results improve the knowledge about microstructural changes and arrangements after wire bonding and during APC. After ultrasonic deformation by wire bonding, the evolution of a distinct rotated cube (RC) textured area within the wedge was proved by EBSD analysis. The RC texture is discussed as a result of shear deformation and oriented grain growth. Decreased hardness within the RC textured area provides evidence for local softening effects during wire bonding. During APC, besides crack propagation, grain coarsening as well as local low angle boundary migration occurs and the wedge texture changes to an overall random orientation. Effects of microstructure on the crack growth behavior were discussed and suggestions for the improvement of wire bond reliability were derived.

Effect of palladium on the mechanical properties of Cu–Al intermetallic compounds

There is growing interest in copper (Cu) wire bonding due to its significant cost savings over gold wire. However, concerns regarding package reliability and corrosion susceptibility have driven the industry to develop alternative materials. Recently, palladium coated copper (Pd–Cu) wire has been widely used in fine pitch applications as it is believed to improve reliability of copper wire bonds on aluminum (Al) pads. However, the effect of palladium on the mechanical properties and corrosion resistance of Cu and Cu–Al intermetallic compounds (IMCs) has not been studied in detail. In this paper, bulk alloys of Cu and Cu–Al alloys with different concentrations of Pd were studied. Among the three IMCs studied, CuAl (H∼8.5GPa) was found much harder than CuAl2 and Cu9Al4 (H∼6.0GPa). Young’s moduli of CuAl and Cu9Al4 IMCs were around 155GPa and are much stiffer than the one for CuAl2 (∼110GPa). The addition of a few percent Pd only slightly increases the hardness and Young’s modulus of the IMCs.

Simplifying Reliability Testing of Wire Bonds Using On-Chip Heater and Pad Resistance Method

In situ sensors can measure wire bond reliability nondestructively during thermal aging. Conventional thermal aging of ball bonds requires ovens heating the entire microchip along with the wire bonds, also affecting interconnects for in situ sensors. To protect the interconnects and on-chip logic components of in situ sensor chips, conventional thermal aging is kept below a safe temperature limit of 200 °C. At higher temperatures, the doped Si components change their characteristics and transistors stop working. Localized on-chip heating is introduced to circumvent these drawbacks using a new microheater to increase the safe temperature limit for nondestructive reliability assessment with in situ sensors. The effect of temperature on surrounding components is reduced. The microheater is a rectangular design resistive heater made from N+ silicon. In addition, a pad resistance measurement is introduced that indicates bond aging more conveniently than previously reported bond resistance measurements.

Reliability of thick Al wire: A study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods

The effect of bonding parameters on the reliability of thick Al wire bond is investigated. Samples were prepared with 25 different designs with 5 different bonding parameters such as time, ultrasonic power, begin-force, end-force and touch-down steps (pre-compression) with 5 levels. The bond signals of ultrasonic generator were collected during bonding in order to obtain prior quality information of bonded wires. 3D X-ray tomography was then used to evaluate bond quality during passive thermal cycling between −55°C and 125°C. Tomography datasets were obtained from the as-bonded condition and during cycling. The results clearly show ultrasonic power, appropriate levels of begin-force and touch-down steps are all important for achieving a well attached and reliable bond. Analysis of the virtual cross-sections indicates a good correlation between the bond signal (i.e. the initial bond quality) and wire bond damage/degradation rate. An improved understanding of the wire bonding process was achieved by observing the effect of the complex interaction of bonding parameters on the ultrasonic generator signals and degradation rate under thermal cycling.

Impact of load pulse duration on power cycling lifetime of Al wire bonds

The elimination of solder interfaces in advanced power modules has increased the lifetime in active power cycling tests. It facilitates the investigation of Al wire bond reliability without the interference by solder fatigue. An extensive power cycling test program was conducted over the last 5years to investigate the impact of test conditions on the component lifetime. The results serve as a basis to propose a new empirical lifetime model for advanced solder-free power modules. The test results and the empirical lifetime model will be presented with a special focus on the impact of the load pulse duration on the power cycling lifetime.

Application of Kriging and Radial Basis Function for Reliability Optimization in Power Modules

This paper discusses the design for reliability of a wire bond structure in a power electronic module based on computational approach that integrates methods for high fidelity analysis, reduced order modeling, numerical risk analysis, and optimization. This methodology is demonstrated on a wire bond structure in a power electronic module with the aim of reducing the chance of failure due to the wire bond lift off in a power electronic module. In particular, wire bond reliability of the power module related to the thermal fatigue material degradation of aluminum wire is one of the main concerns. Understanding the performance, reliability, and robustness of wire bond is a key factor for the future development and success of the power electronic module technology. The main focus in this study is on the application of reduced order modeling techniques and the development of the associated models for fast design evaluation and analysis. The discussion is on methods for approximate response surface modeling based on interpolation techniques using Kriging and radial basis functions. The reduced order modeling approach uses prediction data for the electrothermomechanical behavior of the power module wire bond design obtained through nonlinear transient finite element simulations, in particular, for the fatigue lifetime of the aluminum wire attached to the silicon chip and the warpage (displacement) of the wire in the module. These reduced order models are used for the analysis of the effect of design uncertainties on the reliability of these advanced electronics modules. To assess the effect of uncertain design data, different methods for estimating the variation of reliability-related metrics of the wire bond model are researched and tested. Sample-based methods, such as full-scale Monte Carlo and Latin hypercube, and analytical approximate methods, such as first order second moment (FOSM) and point estimation method (PEM), are investigated, and their accuracy is compared. The optimization modeling analyzes the probabilistic nature of the reliability problem of the aluminum wire bond structures under investigation. Optimization tasks with design uncertainty are identified and solved using a particle swarm optimization algorithm. The probabilistic optimization deals with two different characteristic performance metrics of the design, the electrothermomechanical fatigue reliability of the aluminum wire attached to the chip and the thermally induced warpage of the wire in the module structure. The objective in this analysis is to ensure that the design has the required reliability and meets a number of additional requirements.

Application of Kriging and radial basis function in power electronic module wire bond structure reliability under various amplitude loading

This paper discusses life time prediction of wire bond structure in a power electronic module based on computational approach that integrates methods for high fidelity analysis, reduced order modelling, and life time prediction using reduced order model. This methodology is demonstrated for the design of a wire bond structure in a power electronic module with aim of reducing the chance of failure due to the wire bond lift off in power electronic module when a random load is applied to the aluminium wire. In particular, wire bond reliability of the power module related to the thermal fatigue material degradation of aluminium wire is one of the main concerns. In the power electronic module reliability, understanding the performance, reliability and robustness of wire bond is a key factor for the future development and success of the power electronic module technology, because wire bond lift off failure ignites other catastrophic failures.The main focus in this study is on the application of reduced order modelling techniques and the development of the associated models for fast evaluation and analysis. The discussion is on methods for approximate response surface modelling based on interpolation techniques using Kriging and radial basis functions. The reduced order modelling approach uses prediction data for the electro-thermo-mechanical behaviour of the power module wirebond design obtained through non-linear transient finite element simulations, in particular for the fatigue life-time of the aluminium wire attached to the silicon chip of the wire in the module. The reduced order models are used for the analysis of predicting the life time of the wire bond structure under random load. One of the widely used cycle counting algorithm, so called rainflow counting algorithm is utilised to count the cycles of temperature profile at the a specific point of the wire bond structure in a power electronic module. Using the cycle results from rainflow algorithm mean life time of the wire bond structure is predicted by a linear cumulative damage model such as Palmgren–Miner rule. This model is utilised to predict the mean fatigue life of the wire bond structure.

Observations of IMC Formation for Au Wire Bonds to Al Pads

A materials investigation of Au wire bonds to Al pads revealed the evolution of a multiphase system whose terminal phases depended on the composition of the Au wire. Scanning transmission electron microscopy/energy-dispersive spectroscopy and electron diffraction data are presented for Au/Al wire bonds using both Pd-doped, 99% pure Au wire (2N) and 99.99% pure Au wire (4N) in the as-formed state, upon completion of overmold operations, and after reflow and aging. The reacted interfaces of both the 2N and 4N bonds were found to take on a bilayer intermetallic compound (IMC) microstructure that persisted with aging and phase changes; it is the interface of this bilayer that is believed to be susceptible to mechanical degradation. Pd was found to accumulate in the IMC near the Au/IMC interface for 2N wire bonds and appears to lead to a phase evolution different from that for 4N wire that may be responsible for enhanced reliability of the 2N wire bond with high-temperature aging.

Reliability and failure analysis of fine copper wire bonds encapsulated with commercial epoxy molding compound

The small outline transistor (SOT) devices which were interconnected with 20 μm copper bonding wire and encapsulated with commercial epoxy molding compound (EMC) have been used in a series of reliability tests which including the thermal shock test, the electrical service life test, and the isothermal aging test. Isolated IMC spots were found at the bonding interface during the thermal shock test. No void or crack was observed even after 1500 cycles thermal shock test. No electrical failure was happened. The isolated IMC spots also occurred at the Cu/Al bonds interface after 500 h electrical operation. After 1000 h electrical operation, the sizes of the IMC spots were about 0.5 μm. No layered IMC was observed. The IMCs were formed at the bonding interface when the aging temperature was between 150 °C and 250 °C. Micro cracks and Kirkendall voids were observed with the aging time of 9 days at 200 °C and the aging time of 9 h at 250 °C. The minor element in the EMC, Sb, has reacted with Cu wire and Cu bond surface at 250 °C when the aging time was more than 16 h. Cu 3Sb was the main product of the diffusion reaction. With the aging time of more than 49 h, the Cu wire was crashed into pieces and the Cu bond periphery has been severely corroded.

Unusual Observations in the Wear-Out of High-Purity Aluminum Wire Bonds Under Extended Range Passive Thermal Cycling

This paper reports on the reliability of ultrasonically wedge-bonded 99.99% (4N) and 99.999% (5N) pure aluminum wires under different passive thermal cycling ranges, namely, -40°C to 190°C, -60°C to 170°C, -35°C to 145 °C, and -55°C to 125°C. The rate of bond strength degradation during cycling was found to be more rapid in the wire bonds subjected to lower peak temperatures (Tjmax) and lower temperature ranges (ΔT) for both wire types. This observed effect of ΔT cannot be described by the commonly accepted empirical relationships based on damage accumulation, such as the Coffin-Manson law. In addition, the 4N wire bonds were found to degrade more rapidly than the 5N bonds under the cycling ranges investigated. Microstructural characterization and nanoindentation of the bond interfaces indicated differences in microstructural restoration in wires subjected to the different cycling ranges. These differences have been attributed to annealing phenomena occurring in the wires during the high-temperature phase of cycling, which are believed to remove some of the damage accumulated during the low-temperature phase. A model is proposed for the prediction of wire bond wear-out rate, which incorporates both damage accumulation and damage removal mechanisms. We conclude that the rate of annealing during cycling varies exponentially with temperature; the annealing effects which occur can reduce damage accumulation and therefore influence wire bond reliability.

The Microelectronic Wire Bond: Past, Present, and Future

Since its very inception, the microelectronic wire bond has been the dominate form of first-level interconnection (chip to package or substrate). Wire bonds account for over 80% of first-level chip interconnections made by the microelectronic industry each year. Wire bonding is reliable, flexible, and low cost when compared to other forms of first-level interconnections. In this article a brief discussion of wire bonding is presented along with bond formation fundamentals. Aspects of wire bond reliability will be explored in conjunction with methods of wire bond testing. Particular attention is given to fine pitch bonding, bonding to stacked die, higher frequency bonding, ball bonding with copper wire, and advanced bond testing methods.

Effect of Physical Properties of Al–Si Electrode Films on the Deformation Behaviors and the Strength of Thick Al Wire Bonds during Thermal Cycle Test

The deformation behaviors of Al–Si films and the strength change of Al wire bonds on Al–Si films during heating and cooling cycles have been investigated as a function of substrate temperature of the sputtering process; the purpose was to clarify reliability of both Al wire bonds and Al–Si films for use in insulated gate bipolar transistor (IGBT) modules. The extent of deformation in Al–Si films sputtered at 593 K during heating and cooling cycles was the smallest among films sputtered at room temperature (RT), 473 K, and 593 K. The strength of Al wire bonds on Al–Si films sputtered at the three temperatures was the highest for Al–Si films sputtered at 593 K. The reliability of Al wire bonds on Al–Si films formed at 593 K was about two times higher than the bond reliability on Al–Si films formed at RT and 473 K.