An experimentally demonstrated, vertical chip‐to‐chip evanescent coupler between silicon nitride (SiN) and silicon (Si) is presented with the coupler loss measured to be 0.39 1.06 dB at 1550 nm with a 1‐dB bandwidth of 160 nm extending across the C‐band, S‐band, and L‐band (1480–1640 nm). The average coupling loss is determined to be 0.73 dB for the 1480–1640 nm wavelength range with a 2σ tolerance of 0.92 dB. The 1‐dB lateral alignment tolerance is 1.56 0.14 μm at 1550 nm and the average tolerance is 1.38 0.24 μm across the 1480–1640 nm wavelength regime. In addition, the average coupling loss varies by less than 0.35 dB and the average 1‐dB alignment tolerance varies by less than 30 nm for temperatures varying from 23 to 60 °C. Finally, the average coupling loss range is less than 1.5 dB range across four sets of identically packaged die. This is the first experimental demonstration of an interchip, passively assembled evanescent coupler using standard complementary metal‐oxide‐semiconductor foundry processes for directly coupling between Si and SiN, overcoming a waveguide refractive index difference of = 1.32 without requiring taper tip widths of less than 100 nm.
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