Reduced Carrier Recombination Research Articles

Regulation of the Charge Carrier Dynamics in Antimony Selenide Thin‐Film Solar Cells Based on the Effective Diffusion of Ions at the Heterojunction Interface

AbstractAntimony selenide (Sb2Se3) is regarded as a next‐generation material for high‐efficiency photovoltaic applications due to its favorable bandgap, high absorption coefficient, carrier mobility, and stability. Nonetheless, cadmiun sulfide (CdS) has low short‐wavelength transmittance, which limits photon utilization, and the suboptimal band alignment in the CdS/Sb2Se3 heterojunction causes significant interface recombination. In this study, a simple lithium‐ion doping method is presented and report the dual enhancement effects of lithium ions on CdS and Sb2Se3 layers for the first time. Lithium ions improve the CdS layer by allowing for larger grain sizes, reduces roughness, and increase transmittance in the electron transport layer. At the same time, lightweight Li ions diffuse more easily through the interface into the Sb2Se3 layer, resulting in improved orientation, lower defect density, and a longer carrier lifetime. Furthermore, doping with Li ions changes the band alignment of the CdS/Sb2Se3 junction from a “cliff‐like” to a “spike‐like” configuration, improving carrier transport and reducing carrier recombination near the interface. Ultimately, due to the benefits of Li‐ion doping, the champion device obtained have a VOC of 0.462 V, a JSC of 30.86 mA cm−2, an FF of 65.46%, and an efficiency of 9.33%, representing a 15.8% increase over the undoped device.

Design and Development of D-A-D Organic Material for Solution-Processed Organic/Si Hybrid Solar Cells with 17.5% Power Conversion Efficiency.

Organic/silicon hybrid solar cells have attracted much interest due to their cheap fabrication process and simple device structure. A category of organic substances, Dibenzothiophene-Spirobifluorene-Dithiophene (DBBT-mTPA-DBT), comprises dibenzo [d,b] thiophene and 3-(3-methoxyphenyl)-6-(4-methoxyphenyl)-9H-Carbazole, which function as electron donors. In contrast, methanone is an electron acceptor, with an ∆Est of 3.19 eV. This work focused on hybrid solar cells based on the guest-host phenomena of DBBT-mTPA-DBT and CBP. Using a Si/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) hybrid solar cell with an ultra-thin Dibenzothiophene-Spirobifluorene-Dithienothiophene (DBBT-mTPA-DBT) interlayer between Si and Al led to a PCE of 17.5 ± 2.5%. The DBBT-mTPA-DBT interlayer substantially improved the Si/Al interface, reducing contact resistance from 6.5 × 10⁻1 Ω·cm2 to 3.5 × 10⁻2 Ω·cm2. This improvement increases electron transport efficiency from silicon to aluminum and reduces carrier recombination. The solar cell containing the DBBT-mTPA-DBT/Al double-layer cathode shows a 10.85% increase in power conversion efficiency relative to the standard Al cathode device.

Compact Layer‐Free Perovskite Solar Cells with Low‐Temperature UVO Photochemical Annealed Mesoporous TiO2 Layers

In recent years, the field of perovskite solar cells (PSCs) has seen rapid development, with most high‐efficiency devices incorporating dense titanium dioxide (TiO2) barrier layers and mesoporous TiO2 layers to enhance selective electron transport. However, the manufacturing process requires high‐temperature sintering steps above 450 °C, leading to significant energy consumption. In addition, this requirement greatly limits the potential applications of PSCs in the field of flexible electronics. This study introduces a new method for preparing dense‐layer‐free mesoporous PSCs using low‐temperature UVO annealing of m‐TiO2. UVO annealing effectively removes residual organic components from m‐TiO2 precursor films, enhances the conductivity and wettability of the films, thereby reducing carrier recombination and improving the performance of PSCs. Research has shown that PSC with a 40 min UVO annealed m‐TiO2 layer exhibits a final photoelectric conversion efficiency of 17.79%, comparable to devices with traditional high‐temperature annealed m‐TiO2 PSCs. In addition, after 7 days at room temperature and ambient humidity, the unpackaged device maintains a maximum conversion efficiency of 84%. These findings indicate that UVO light annealing is a feasible alternative to high‐temperature annealing, providing a simpler, more cost‐effective, and energy‐saving method for the preparation of metal oxide electron transport layer in PSCs.

Effects of the phase transition on the photoelectrochemical properties of CuFe2O4 composite photoelectrode

In this study, CuFe2O4 was grown using various Cu:Fe source molar ratios. The morphological, structural, electrical, and photoelectrochemical properties of CuFe2O4 photoelectrodes with different structural phases based on molar ratios were analyzed. XRD and XPS were performed to systematically analyze the relationship between the structural and photoelectrochemical properties of the photoelectrode. XRD analysis revealed the phase transformation of CuFe2O4 from cubic to tetragonal phase and back to cubic phase as the Cu:Fe source molar ratio was varied. The crystallinity of Cu-rich cubic-CuFe2O4 was found to be superior to that of tetragonal-CuFe2O4. XPS analysis showed that the Cu-rich cubic-CuFe2O4 sample has higher Cu and Fe binding energies and more oxygen vacancies than the tetragonal-CuFe2O4 sample, which helps reduce carrier recombination. Additionally, cubic-CuFe2O4 samples prepared in Cu-rich conditions demonstrated high flat-band potential and low charge transfer resistance values. As a result, the cubic-CuFe2O4 photoelectrode sample under the Cu-rich condition exhibited a relatively high photocurrent density value. The highest photocurrent density value (-0.38 mA/cm2 at −0.55 VSCE) was obtained with cubic-CuFe2O4 samples prepared under the Cu:Fe 3:1 condition.

A strategy for achieving high-performance single layer polymer photodetectors through dark current reduction using PMMA additives

Suppressing dark current density is crucial for optimizing the performance of organic photodetectors (PDs), particularly in terms of detectivity (D∗) and linear dynamic range (LDR). Organic PDs often utilize the bulk heterojunction structure of organic solar cells to significantly increase photocurrent. However, unlike solar cells, which are unaffected by dark current, photodetectors' performance is substantially limited by it. The interconnected network of bulk heterojunctions leads to a noticeable increase in dark current, thus degrading device performance. Typically, reducing dark current involves adding a modification layer or using multilayer planar heterojunctions, which effectively reduce dark current but often delay response speed and complicate manufacturing. This study presents an alternative approach by incorporating a small concentration of PMMA into single-layer polymer photodetectors, significantly reducing dark current without affecting photocurrent. For this single-layer polymer PD, an ultra-low dark current density of 1.25 × 10−8 A/cm2, a high Dsh∗ of 2.74 × 1012 Jones, an LDR of 120.5 dB, and a fast response time with 1.6 μs were achieved. The capacitance-voltage (C-V), electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) measurements revealed that the PMMA additive reduces internal defects, increases bulk resistance, optimizes phase separation, and enhances carrier transport efficiency. The improved device performances are attributed to a more efficient vertical arrangement of the donor-acceptor interface and carrier channels, thus reducing carrier recombination loss. These findings offer a new direction for fabricating high-performance single-layer photodetectors.

Internal Capsulation Via Self-Cross-linking and π-Effects Achieves Highly Stable Perovskite Solar Cells.

Pursuing high stability becomes the core challenge in realizing the widespread application of perovskite solar cells (PerSCs). Here, a practical internal-capsulation strategy is proposed by introducing cross-linkable methacrylate analogs upon the perovskite layer, hindering ion migration and preventing lead leakage to achieve stable PerSCs. Butyl methacrylate (UMA) and benzyl methacrylate (BMA) can chemically interact with the perovskite layer, especially for the BMA dimer with significant π-interactions among the hanging benzene rings. Such configuration facilitated more compact coordination, thereby restoring the Fermi level of perovskite to a defect-free state and reducing carrier recombination losses. Moreover, by integrating the self-cross-linking and intermolecular π-effect, the application of BMA upgraded the internal capsulation from linear protection to a compact mesh-like scale. Consequently, the application of BMA not only boosted the efficiency to 25.31% but also greatly enhanced the stability of the perovskite layer, especially for water resistance and preventing lead linkage. The internal capsulation strategy upgrading from linear to mesh-like marked an innovative direction in protecting the perovskite layer, paving the way for more sustainable PerSCs in further application.

The key role of anti-solvent temperature in quantum dot/perovskite core-shell nanowire array solar cells

Combining perovskite with infrared quantum dots to construct a core-shell nanostructure nanowire array solar cell can increase the light absorption range and enhance the light absorption and carrier transport efficiency of the solar cell. However, the preparation of a perovskite absorber layer on a nanowire array with quantum dots often presents issues such as high roughness and a large number of lattice defects, which have a negative impact on the photovoltaic performance. The anti-solvent method is a commonly used technique to improve the quality of perovskite. The temperature variation of the anti-solvent can change solubility, and influence the reaction rate and crystal formation process of perovskite, thus affecting its photovoltaic performance. In this study, the quality of perovskite in the core-shell nanostructure nanowire array was improved by controlling the temperature of the anti-solvent (toluene). Experimental results show that as the temperature of toluene increases, the photovoltaic performance is gradually improved. When the toluene temperature was maintained at 75 °C, the device exhibited significantly improved photovoltaic performance with an efficiency of 12.64 %, surpassing the efficiency obtained without any anti-solvent modification. As the temperature of the anti-solvent increases, the absorption of visible and near-infrared light spectrum by the nanowire arrays is enhanced, which promotes the efficient generation of photo-generated carriers. Furthermore, defects in the nanowire arrays gradually decrease, leading to a reduction in carrier recombination. These findings provide valuable insights for advancing core-shell nanostructure nanowire array solar cells.

In-situ passivating surface defects of ultra-thin MAPbBr3 perovskite single crystal films for high performance photodetectors

Ultra-thin single crystal film (SCF) without grain boundary inherits low charge recombination probability as bulk single crystals. However, its low depth brings a high surface defect ratio and hinders the carrier transport and extraction, which affects the performance and stability of optoelectronic devices such as photodetectors, and thus surface defect passivation is of great practical significance. In this paper, we use the space confined method to grow MAPbBr3 SCF and selected BA2PbI4 for surface defect passivation. The results reveal that BA cation passivates MA vacancy surface defects, reduces carrier recombination, and enhances carrier lifetime. The carrier mobility is as high as 33.6 cm2 V−1 s−1, and the surface defect density is reduced to 3.4 × 1012 cm−3. Therefore, the self-driven vertical MAPbBr3 SCF photodetector after surface passivation exhibits more excellent optoelectronic performance.

Characterization of methylammonium tin iodide thin films prepared by sequential physical vapour deposition

Methylammonium tin triiodide (MASnI3) films were grown through Sequential Physical Vapour Deposition (SPVD) without breaking the vacuum and optimized by varying MAI thickness and annealing time while keeping SnI2 thickness constant. The film's crystallinity increased with MAI thickness and annealing time. Optimal bandgap was attained for the film with 500 nm MAI annealed for 20 & 40 min. FE-SEM revealed densely packed, large grains, increasing in size with MAI thickness and on annealing from 0 to 40 min and decreasing at 80 min. The film with 300 nm MAI thickness annealed for 40 min showed the strongest PL intensity suggesting reduced carrier recombination losses. Trap densities reduced with annealing time and MAI thickness due to improvements in films' crystallinity, grain sizes and reduced grain boundaries which act as carrier trapping sites. Hence, films prepared through SPVD, exhibit excellent structural, optical, and morphological properties, suitable for photovoltaic applications.

Dimeric Small Molecule Acceptors via Terminal-End Connections: Effect of Flexible Linker Length on Photovoltaic Performance.

The dimerization of small molecule acceptors (SMAs) holds significant potential by combining the advantages of both SMAs and polymer acceptors in realizing high power conversion efficiency (PCE) and operational stability in organic solar cells (OSCs). However, advancements in the selection and innovation of dimeric linkers are still challenging in enhancing their performance. In this study, three new dimeric acceptors, namely DY-Ar-4, DY-Ar-5, and DY-Ar-6 are synthesized, by linking two Y-series SMA subunits via an "end-to-end" strategy using flexible spacers (octyl, decyl, and dodecyl, respectively). The influence of spacer lengths on device performance is systematically investigated. The results indicate that DY-Ar-5 exhibits more compact and ordered packing, leading to an optimal morphology. OSCs based on PM6: DY-Ar-5 achieves a maximum PCE of 15.76%, attributes to enhance and balance carrier mobility, and reduce carrier recombination. This dimerization strategy using suitable non-conjugated linking units provides a rational principle for designing high-performance non-fullerene acceptors.

Low-cost deposition of tunable band gap Zn(O,S) as electron transport layer for crystalline silicon heterojunction solar cells

In recent years, the research on silicon heterojunction (HJT) solar cells based on dopant-free contacts has experienced rapid development. Zn(O,S) is a low work function n-type semiconductor compound with tunable band gap that can be used as the electron transport layer (ETL) in HJT solar cells. In our work, we choose Zn(O,S) as ETL and deposit it via the low-cost chemical bath deposition (CBD) method. Uniform and fast growth of Zn(O,S) films can be obtained by regulating the concentration of the complexing agent and the ratio of reactants to reduce the generation of impurities. To further achieve band matching with c-Si, the Zn(O,S) films are processed with air-annealing to modify the elemental ratios. The air-annealing lowers the interfacial electron transport barrier, which promotes charge separation and transport, thus reducing carrier recombination at the interface. Finally, the PCE of HJT solar cell based on CBD-Zn(O,S) ETL is close to 15 %, providing a new potential route for the development of low-cost HJT solar cells.

Enhancing the photovoltaic efficiency of CZTSSe thin-film solar cells via Ag-doping induced defect modulation

Defect modulation is one of the key factors in determining the performance of solar cells, and the presence of defects tends to adversely affect carrier recombination and transport, thus having a direct impact on both cell stability and efficiency. Ag doping can modulate the defects, but in-depth studies on the mechanism of the effect are needed. Therefore, an in-depth study of the effect of Ag incorporation on the defect modulation mechanism of Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is of great practical significance for understanding the mechanism of action of Ag doping and further optimising the cell performance. In this study, (AgxCu1-x)2ZnSn(S,Se)4 (0 ≤ x ≤ 1) (ACZTSSe) solar cells were successfully prepared by N, N-dimethylformamide (DMF) solution, which have the characteristics of reducing defects and enhancing photovoltaic performance. After the introduction of Ag, the absorber formed a crystal structure with few holes and penetrating top and bottom. And the electrical performance of the solar cell is significantly improved, J0 is reduced from 4.6 × 10−5 A/cm2 to 2.7 × 10−6 A/cm2, and its contribution to the photovoltaic conversion efficiency (PCE) improvement reaches 142%. This indicates that the introduction of Ag helps to optimize the quality of the absorber, thereby reducing the concentration of interfacial and bulk defects. It also reduces carrier recombination and improves carrier lifetime from 0.86 ms to 1.75 ms. Ultimately increasing our cell efficiency from 7.55% to 10.64% when the Ag content reached 5%. These results clearly show that we have successfully achieved the modulation of defects in CZTSSe solar cells by Ag doping.

Efficient window layer modification enabling the remarkable FF and efficiency improvement of kesterite solar cell

As the core structure of kesterite thin-film solar cell (TFSC), the nature of N-type functional layer and its interface is a key issue impacting device performance, typically its influence on carrier recombination and electron charge transportation. Here, a modified window layer to tailor N-type bulk and its interface properties for efficiency carrier collection and device performance is incorporated by co-sputtering ZnO and SiO2. Research has found that the modified window layer not only has an excellent wide optical spectrum with high transmittance, enabling additional photon harvesting and short-wave absorption, but also modulates the energy band position for better band alignment to facilitate charge transportation, ensuring higher conductivity. Simultaneously, the significantly reduced carrier recombination and increased uniformity of the device further accelerate charge efficient collection and enhance filling factor (FF). Consequently, the modified window layer of kesterite TFSC enables a remarkable efficiency improvement from 8.4% to 12.0% with a boosted FF from 61% to 73%. These novel results provide the inherent physical origin for improving the photovoltaic performance of kesterite TFSC by appropriate modification of ZnO:SiO2 window layer and open up an effective and feasible strategy, which can also be applied to other optoelectronic devices.

In situ XPS confirms enhanced hydrogen evolution in S-scheme heterojunction Cd0.8Mn0.2S/Cu2WS4 via charge vectorial separation

Solar-driven water splitting for hydrogen production is a vital approach to mitigating the energy crisis and achieving carbon neutrality and peak carbon emissions. Cd0.8Mn0.2S holds significant potential for photocatalytic hydrogen evolution but faces severe challenges due to photogenerated carrier recombination. To address this, we employed ultrasonic self-assembly to tightly couple Cu2WS4 nanosheets with Cd0.8Mn0.2S nanoparticles, forming an S-scheme heterojunction to reduce carrier recombination rates. In this configuration, Cd0.8Mn0.2S acts as the electron acceptor, and Cu2WS4 serves as the electron donor. The Cd0.8Mn0.2S/Cu2WS4 structure creates a closely spaced interface, providing the shortest transfer distance for electron migration. The S-scheme heterojunction strategy effectively suppresses the recombination of photogenerated carriers, promoting vectorial separation. Under 10 W white light irradiation, the Cd0.8Mn0.2S/Cu2WS4 composite photocatalyst exhibited remarkable hydrogen evolution activity, with a hydrogen production rate of 39.83 mmol g−1 h−1. This S-scheme heterojunction strategy lays the foundation for the structural design and large-scale application of high-activity visible-light photocatalysts.

TiO2 embedded in AC-COFs/SiO2 composites with core-shell structure for improved photocatalytic degradation performance of tetracycline

The excellent photocatalytic properties of covalent organic frameworks (COFs) and Titanium dioxide (TiO2) have been a hot research topic. However, the extensive application of the COFs and TiO2 in photocatalysis is restricted by their easy agglomeration and poor visible light usage, respectively. In this research, acyl chloride-covalent organic frameworks (AC-COFs) prepared by ultrasound assisted synthesis method was attached to the surface of silica oxides (SiO2) prepared by the modified Stöber method with high specific surface area and high porosity through amino groups to form a core-shell structure, which effectively solved the problem of easy agglomeration of the AC-COFs. Subsequently, TiO2 was loaded onto the surface of the AC-COFs@SiO2 composites to create high-performing TiO2/AC-COFs@SiO2 composites with a wide visible light absorption range (λ=409 nm), a narrow band gap (Eg=2.32 eV) and strong adsorption performance (Qm=314.47 mg/g). Compared with SiO2, the adsorption performance of this composite material was improved by 1.5 times. Meanwhile, the formed binary heterogeneous structure effectively reduces carrier recombination rate and releases more active substances like h+ and ·OH, so the catalyst has excellent self-cleaning and cyclic stability under the combined effect of adsorption and photocatalysis. It was found that tetracycline (TC) completely degrades after 50 min and the degradation rate decreasing by only 2.8 % after six cycles.

Constructing potassium and hydroxyl co-doped dual-dipole structures on highly active 3D g-C3N4 surfaces for highly boosting photocatalytic hydrogen peroxide production efficiency in pure water

Producing hydrogen peroxide (H2O2) through visible-light-driven photocatalytic oxygen reduction in pure water is crucial for sustainable ecological applications but poses significant challenges. It include the rapid recombination of electron-hole pairs and a scarcity of effective catalytic sites, which traditionally limit the process efficiency. To address these issues, we have developed a novel catalyst, designated as KCNOH, which consists of a three-dimensional (3D) porous g-C3N4 framework doped with potassium (K+) and modified with surface hydroxyl groups (–OH). This design significantly enhances H2O2 yield, achieving 91.36 μmol g−1 h−1 (cut 420 nm)—a yield approximately 36 times higher than conventional bulk g-C3N4 (2.57 μmol g−1 h−1). The introduction of a 3D porous structure provides an abundance of active-sites. The dual-dipole mechanism, facilitated by K+ ions and hydroxyl groups, plays a pivotal role by efficiently transporting photogenerated electrons and consuming holes, respectively. Through density functional theory (DFT) calculations, the changes in the band structure of the catalyst caused by the doping of K+ and the grafting of –OH were elucidated. In addition, the transition state affinity of oxygen induced by the –OH was also studied to reveal the synergistic catalytic mechanism. This mechanism markedly reduces carrier recombination and accelerates charge migration, underscoring its importance in catalyst design. Our findings not only improve the understanding of charge dynamics but also open novel perspectives for the design of highly-efficient composite materials, which is crucial for energy and environmental applications.

Boosting All-Perovskite Tandem Solar Cells by Revitalizing the Buried Tin-Lead Perovskite Interface.

Narrow-bandgap (NBG) mixed tin-lead (Sn-Pb) perovskite solar cells (PSCs) serve as crucial top subcells in all-perovskite tandem solar cells (TSCs). However, the prevalent use of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) hole transport layers (HTLs) in NBG PSCs compromises device efficiency and stability. To address this, the study proposes a revitalizing strategy for the buried interface of Sn-Pb perovskites by directly immersing acetylcholine chloride (ACh) into PEDOT: PSS. ACh acts as a proficient "diver," not only modulating the bottom PEDOT: PSS HTLs but also facilitating the reconstruction of the buried interface and significantly enhancing the quality of the top perovskite layers. This intervention with ACh prevents Sn2+ oxidation, mitigates buried defects, and encourages the growth of large, densely packed grains within Sn-Pb perovskites. Consequently, the optimized NBG PSCs exhibit significantly improved hole transport and reduced carrier recombination, achieving a steady-state efficiency of 22.98% with enhanced stability. Furthermore, these optimized NBG Sn-Pb cells enable highly efficient two-terminal and four-terminal all-perovskite TSCs, boasting steady-state efficiencies of 27.54% (certified at 26.41%) and 28.01%, respectively. This study emphasizes the importance of optimizing NBG PSCs through buried interface reconstruction, propelling the advancement of all-perovskite TSCs.

Designing and simulating of new highly efficient ultra-thin CIGS solar cell device structure: Plan to minimize cost per watt price

This research paper examines the execution of ultra-thin solar cells made from chalcopyrite copper indium gallium diselenide (CIGS). The study presents a new CIGS heterojunction solar cell structure, which includes a Cd-free tungsten disulfide (WS2) buffer layer and poly (3,4-ethylene dioxythiophene) polystyrene sulfonate (PEDOT: PSS) passivation layer. The performance of the solar cell is raised by a back surface field (BSF). A highly recombining rear surface is kept away from minority carriers by a field created by further strong doping at the back. The structure is Ni/PEDOT:PSS/CIGS/WS2/ZnO/Al and has been estimated numerically using the Opto-electrical stimulation of semiconductor layers simulator SCAPS-1D. A high efficiency with a Back surface passivated layer of 25.70 % with Voc of 0.81 V, Jsc of 39.33 mA/cm2, and FF of 79.89 % and without passivated layer efficiency of 17.58 % with Voc of 0.73 V, Jsc of 32.18 mA/cm2, and FF of 74.78 % is found for the intended CIGS-based solar cell with WS2 buffer. The interface between CIGS and WS2 forms a band structure that resembles spikes. This structure is crucial in enhancing the outputs by reducing carrier recombination. The optimal thicknesses for the buffer and CIGS absorber layers are 0.02 μm and 0.2 μm, respectively. These findings help reduce the cost per watt of the solar cell. Fabrication at a mass production scale, minimizing the thickness will have a significant impact on reducing cost.

Innovative surface passivation of CZTSSe thin films: Ammonium sulfide treatment with plasma etching

For CZTS(e) solar cells, the passivation of interfacial defects is crucial for effectively reducing carrier recombination at the interface. This study examined the combined impact of plasma etching and surface sulfuration on the passivation of interface defects in CZTSSe thin films. The results indicated that plasma etching could improve the surface quality of the thin films and passivate surface defects. The (NH4)2S vapor had a significant sulfuration effect on the surface of the CZTSSe thin films post-etching. The surface defects of the CZTSSe film were passivated by the sulfur element entering the film by sulfuration. Moreover, the bandgap of the CZTSSe thin films was improved. The efficiency of the solar cell device increased by 1.72 % with a plasma etching duration of 5 min and (NH4)2S vaporization treatment of 15 min. This study proposes a novel approach that employs surface passivation techniques to enhance the efficiency of CZTSSe thin film solar cells.

Additive-Assisted Hydrothermal Growth Enabling Defect Passivation and Void Remedy in Antimony Selenosulfide Solar Cells.

Antimony selenosulfide (Sb2(S,Se)3) has recently emerged as a promising light-absorbing material, attributed to its tunable photovoltaic properties, low toxicity, and robust environmental stability. However, despite these advantages, the current record efficiency for Sb2(S,Se)3 solar cells significantly lags behind their Shockley-Queisser limit, especially when compared to other well-established chalcogenide-based thin-film solar cells, such as CdTe and Cu(In,Ga)Se2. This underperformance primarily arises from the formation of unfavorable defects, predominately located at deep energy levels, which act as recombination centers, thereby limiting the potential for performance enhancement in Sb2(S,Se)3 solar cells. Specifically, deep-level defects, such as sulfur vacancy (VS), have a lower formation energy, leading to severe non-radiative recombination and compromising device performance. To address this challenge, thioacetamide (TA), a sulfur-containing additive is introduced, into the precursor solution for the hydrothermal deposition of Sb2(S,Se)3. This results indicate that the incorporation of TA helps in passivating deep-level defects such as sulfur vacancies and in suppressing the formation of large voids within the Sb2(S,Se)3 absorber. Consequently, Sb2(S,Se)3 solar cells, with reduced carrier recombination and improved film quality, achieved a power conversion efficiency of 9.04%, with notable improvements in open-circuit voltage and fill factor. This work provides deeper insights into the passivation of deep-level donor-like VS defects through the incorporation of a sulfur-containing additive, highlighting pathways to enhance the photovoltaic performance of Sb2(S,Se)3 solar cells.