Abstract
In recent years, the research on silicon heterojunction (HJT) solar cells based on dopant-free contacts has experienced rapid development. Zn(O,S) is a low work function n-type semiconductor compound with tunable band gap that can be used as the electron transport layer (ETL) in HJT solar cells. In our work, we choose Zn(O,S) as ETL and deposit it via the low-cost chemical bath deposition (CBD) method. Uniform and fast growth of Zn(O,S) films can be obtained by regulating the concentration of the complexing agent and the ratio of reactants to reduce the generation of impurities. To further achieve band matching with c-Si, the Zn(O,S) films are processed with air-annealing to modify the elemental ratios. The air-annealing lowers the interfacial electron transport barrier, which promotes charge separation and transport, thus reducing carrier recombination at the interface. Finally, the PCE of HJT solar cell based on CBD-Zn(O,S) ETL is close to 15 %, providing a new potential route for the development of low-cost HJT solar cells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
