High power pulsed magnetron sputtering (HPPMS) has attracted a great deal of interest because of its potential to provide a highly ionized flux of target material to the substrate. However, practical experience with HPPMS has shown deposition rates typically lower than direct current sputtering (DC sputtering) rates at the same average power, and ionization fractions of target material flux to the substrate often lower than anticipated. A mathematical model explaining the source of these observed process characteristics has been proposed by the author previously. Here, a graphical means of visualizing the mechanism for deposition rate reduction and lower than expected ionization fractions is presented.