Rectification Behavior Research Articles

Fabrication of n-CeZnO/p-Si heterojunction diodes for enhanced solar energy conversion

Doping in semiconductor nanostructures greatly influences in their fundamental properties and greatly enhances the finale efficiencies in various applications. Here, we report the formation of n-type Ce3+ doped ZnO nanostructured thin films on p-Si wafers via a facile phytochemical assisted hydrothermal technique. The heterostructure diodes were examined for their structural, morphological, optical, electrical and photocatalytic properties. Ce3+ ions doping in the ZnO lattices were confirmed with the change in peak position shift and the decreased crystalline size from 34 nm (pristine ZnO) to 18 nm (5% Ce3+ doped ZnO). The Ce3+ induced flake like morphology was also identified in our experiment. Further the optical bandgap values have got decreased from 3.3 eV to 2.9 eV for cerium ions doping. Measured diode parameters were sensitive to the cerium ions doping concentration besides with good rectification behaviour. Upon the light illumination enhanced current of 75% over the dark current is realized. In sunlight methylene blue dye degradation photocatalysis the n-ZnO/p-Si exhibited 45% efficiency whereas the n-CeZnO/p-Si exhibited 77%.

Controllable Switching between Highly Rectifying Schottky and p–n Junctions in an Ionic MoS2 Device

AbstractSemiconductor junctions are of great significance for the development of electronic and optoelectronic devices. Here, controllable switching is demonstrated from a Schottky junction to a p–n junction in a partially ionic liquid‐gated MoS2 device with two types of metal contacts. Excellent rectification behavior with a current on‐off ratio exceeding 106 is achieved in both Schottky and p–n junction modes. The formation of Schottky junction at the Pd electrode/MoS2 contact and p–n junction at the p‐MoS2/n‐MoS2 interface is revealed by spatially resolved photocurrent mappings. The switching between the two junctions under ionic gate modulation is correlated with the evolution of the energy band, further validated by the finite element simulation. The device exhibits excellent photodetection properties in the p–n junction mode, including an open circuit voltage up to 0.84 V, a responsivity of 0.24 A W−1, a specific detectivity of 1.7 × 1011 Jones, a response time of hundreds of microseconds and a linear dynamic range of up to 91 dB. The electric field control of such high‐performance Schottky and p–n junctions opens up fresh perspectives for studying the behavior of junction and the development of 2D electronic devices.

Light-Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte-Assisted Bipolar p-n Junction.

The p-n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains the degree of carrier tunability for expanded functionalities. Herein, a bipolar-junction photoelectrode employed with a gallium nitride (GaN) p-n homojunction nanowire array that operates in electrolyte is reported, demonstrating bipolar photoresponse controlled by different wavelengths of light. Significantly, with rational decoration of a ruthenium oxides (RuOx ) layer on nanowires guided by theoretical modeling, the resulting RuOx /p-n GaN photoelectrode exhibits unambiguously boosted bipolar photoresponse by an enhancement of 775% and 3000% for positive and negative photocurrents, respectively, compared to the pristine nanowires. The loading of the RuOx layer on nanowire surface optimizes surface band bending, which facilitates charge transfer across the GaN/electrolyte interface, meanwhile promoting the efficiency of redox reaction for both hydrogen evolution reaction and oxygen evolution reaction which corresponds to the negative and positive photocurrents, respectively. Finally, a dual-channel optical communication system incorporated with such photoelectrode is constructed with using only one photoelectrode to decode dual-band signals with encrypted property. The proposed bipolar device architecture presents a viable route to manipulate the carrier dynamics for the development of a plethora of multifunctional optoelectronic devices for future sensing, communication, and imaging systems.

Conversion of p-type SnO to n-type SnO2 via oxidation and the band offset and rectification of an all-Tin oxide p-n junction structure

p-Type Tin monoxide (SnO) is a metastable phase and can be oxidized into n-type SnO2 in an O2 environment during growth and post-growth annealing. Here we first grow SnO thin films by RF magnetron sputtering with different oxygen partial pressure in the sputtering gas followed by rapid thermal annealing (RTA) in O2 to obtain n-type conducting SnO2 films. We found that while after RTA in N2 stoichiometric SnO film is p-type conducting, films sputtered with excess O and RTA in O2 crystallize in rutile SnO2 structure and exhibit n-type conductivity. Exploiting the transformation of p-SnO to n-SnO2 through oxidation, we fabricate an all-Tin Oxide transparent p-n quasi-homojunction (p-SnO/n-SnO2) and compare it to a p-SnO/n-ZnO heterojunction structure in term of their rectification behavior. XPS measurements reveal that both SnO2 and ZnO at the Γ point exhibit a type II band offset with SnO with their respective valence band (conduction band) offset of 2.8 eV (1.9 eV) and 2.4 eV (1.33 eV). On the other hand, the indirect conduction band minimum of SnO shows a type I band offset in both junctions with a small conduction band offset of ∼0.1–0.17 eV. The SnO/SnO2 p-n structure shows a reasonable rectification with an ideality factor of ∼12.3, which can be potentially useful in many transparent p-n junction based devices.

Ultrathin All-2D Lateral Diodes Using Top and Bottom Contacted Laterally Spaced Graphene Electrodes to WS2 Semiconductor Monolayers

The ultrathin nature of two-dimensional (2D) materials opens up opportunities for creating devices that are substantially thinner than using traditional bulk materials. In this article, monolayer 2D materials grown by the chemical vapor deposition method are used to fabricate ultrathin all-2D lateral diodes. We show that placing graphene electrodes below and above the WS2 monolayer, instead of the same side, results in a lateral device with two different Schottky barrier heights. Due to the natural dielectric environment, the bottom graphene layer is wedged between the WS2 and the SiO2 substrate, which has a different doping level than the top graphene layer that is in contact with WS2 and air. The lateral separation of these two graphene electrodes results in a lateral metal-semiconductor-metal junction with two asymmetric barriers but yet retains its ultrathin form of two-layer thickness. The rectification and diode behavior can be exploited in transistors, photodiodes, and light-emitting devices. We show that the device exhibits a rectification ratio up to 90 under a laser power of 1.37 μW at a bias voltage of ±3 V. We demonstrate that both the back-gate voltage and laser illumination can tune the rectification behavior of the device. Furthermore, the device can generate strong red electroluminescence in the WS2 area across the two graphene electrodes under an average flowing current of 2.16 × 10-5 A. This work contributes to the current understanding of the 2D metal-semiconductor heterojunction and offers an idea to obtain all-2D Schottky diodes by retaining the ultrathin device concept.

Carrier Transport Properties in Few-Layer WS0.3Se1.7/(WOx)WS0.3Se1.7 Lateral p+–n Junctions Using a Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) Structure

The carrier transport properties of lateral p+–n junctions composed of few-layer WS0.3Se1.7/(WOx)WS0.3Se1.7 on thermally grown SiO2 or high-κ amorphous Al0.74Ti0.26Oy dielectric layers on p+-Si substrates were investigated and analyzed using field-effect transistor structures. Plasma-laser irradiation promoted selective oxidation near the few-layer WS0.3Se1.7 surface and improved the rectification behavior of the current–voltage characteristics. A photocurrent current density (Jph) of 4 × 10–7 A/cm2 was recorded for WS0.3Se1.7/(WOx)WS0.3Se1.7 lateral p+–n junctions under simulated solar-light (AM1.5G) irradiation. Subsequently, improved Jph values of 7.1 × 10–6 (∼17 times) and 1.23 × 10–5 A/cm2 (∼30 times) were obtained by inserting a silver (Ag) back-reflector layer between the amorphous Al0.74Ti0.26Oy dielectric layer and p+-Si and an adding an antireflection (AR) layer of SnO2, respectively. In addition, an enhanced Jph of 1.3 × 10–5 A/cm2 was achieved with a Voc of 0.84 V and an FF of 57% upon applying a gate bias of +12 V. Thus, the photonic and electronic design of lateral p+–n junctions composed of few-layer WS0.3Se1.7/(WOx)WS0.3Se1.7 structures contributes to further research on various types of 2D lateral heterostructures for the application in optoelectronic and photovoltaic devices.

Excellent Optoelectronic Properties and Low Contact Resistance of Graphene/MoS2 Heterostructure Optoelectronic Devices: First-Principles Calculation and Experimental Verification

Two-dimensional (2D) materials have enormous applications and are widely studied in the field of electronics and optoelectronic devices. The electrical contacts between the 2D materials and the electrodes seriously affect the performance of the 2D material optoelectronic devices. Exploring the electronic structure and transport behavior at the interface between 2D materials and electrodes and the underlying physical causes will contribute to the development of 2D material integrated circuits and optoelectronic fields. In this study, the charge transport barriers at the Au/MoS2 and graphene/MoS2 interfaces were investigated from both the Schottky and tunneling barriers through theoretical calculations, which demonstrated that the graphene/MoS2 interface has not only a very low Schottky barrier but also a low tunneling barrier compared to the Au/MoS2 interface. Then, three types of optoelectronic devices, Au/MoS2/Au, graphene/MoS2/graphene, and graphene/MoS2/Au field-effect transistors (FETs), were fabricated. Compared with the Au/MoS2/Au device, the graphene/MoS2/graphene device shows an excellent optical response (R = 654 mA W–1 at 532 nm laser with a power density of 4.8 mW cm–2) and ultrafast response time (rise time 9.8 ms, 12.8 ms fall time). The graphene/MoS2/Au device exhibits excellent rectification behavior and optoelectronic response, with almost no current and photocurrent gain and cutoff state under reverse bias, excellent optoelectronic response under positive bias (responsivity R = 293.4 mA W–1 at a power density of 4.8 mW cm–2 for a 532 nm wavelength laser), and excellent response time (rise time 12.55 ms, fall time 15.44 ms). Our studies are expected to bring opportunities for highly sensitive, high-speed, and energy-efficient photodetectors for comprehensive applications.

High Responsivity and EQE of Single ZnO:Sb Microwire/Ti3C2Tx Heterojunction UV Photodetector

One-dimensional Sb-doped ZnO/Ti3C2Tx (ZnO:Sb/Ti3C2Tx) core–shell heterojunction microwires (MWs) have been fabricated in this work. The Mott–Schottky measurement confirms the p-type conductivity of the obtained ZnO:Sb MWs. The current–voltage (I–V) characteristics of the ZnO:Sb/Ti3C2Tx core–shell heterojunction show a well-defined rectification behavior with a rectification ratio of up to 1000. Photodetectors (PDs) based on a single ZnO:Sb/Ti3C2Tx core–shell heterojunction microwire exhibit a high ultraviolet (UV) response with ultrahigh responsivity (R) and an external quantum efficiency (EQE) of up to 29.2 A/W and 9920% at −1 V bias and under UV light (365 nm, 0.15 mW/cm2) irradiation. The high photocurrent of the PDs is driven by the increased Schottky barrier height of the distinct heterojunction and the extra external carrier injection. In addition, the PD exhibits satisfying self-power performance with an R of 40 mA/W and detectivity of 8.15 × 1011 Jones. This work provides a feasible reference direction for developing highly responsive microwire-based PDs.

Soft Ionic Diode Fabricated Using Asymmetric Ion Distribution in Li+-Zn(II)/Cu(II) Metallohydrogels.

The development of metal ions-incorporated soft materials is of great importance in the present scenario due to their essential requirement in the fabrication of the components such as ionic diodes and electrochemical transistors for soft electronic devices. In the current work, to fabricate a soft ionic diode, two distinct Li+-driven conductive metallohydrogels, namely, MG-Zn and MG-Cu, have been obtained by individually treating a LiOH deprotonated pregelator (H5APL) with Zn(OAc)2 or Cu(OAc)2. The pregelator and metallohydrogels have been well characterized by using various instrumental techniques, which supports their proposed formulations. Field emission scanning electron microscopic images of metallohydrogels reveal the presence of a fibrous network, which helps to create a gel matrix, whereas the rheological experimental results ascertain the true gel phase nature of the synthesized metallohydrogels. The obtained MG-Zn and MG-Cu metallohydrogels were subjected to electrochemical impedance spectroscopic and band gap measurements. The MG-Zn and MG-Cu showed ionic conductivities of 1.02 × 10-3 and 1.14 × 10-3 S/cm, along with band gaps of 2.82 and 2.85 eV, respectively, thus claiming their suitability for device fabrication. Further, the fabricated metallohydrogel-based ionic diode shows appreciable ability to rectify the ionic current with the forward and reverse bias currents of 19 and 1.9 mA at +/-4 V bias potential. Based on all the experimental results, the mechanism has been well established for the rectification behavior in the fabricated metallohydrogel ionic diode.

Ultrasonically synthesized MgZnO nanoparticles for enhanced piezo-photocatalysis and MgZnO/p-Si heterojunction diode characteristics

ABSTRACT Limitations in practical implementations of ZnO nanomaterials could be solved by tuning the properties of ZnO via doping process. We have doped the Mg2+ ions in the ZnO nanostructures (MgZnO) via the ultrasonic synthesis procedure. The structural study revealed the shrinkage of the crystallite size of the wurtzite system for Mg2+ doping concentration. The TEM images revealed the morphological changes for Mg2+ doping from particulate (50 nm) to nanoflower structures (200 nm) in ZnO. Optical studies revealed the enhanced UV photons absorption and emission intensities for Mg doped ZnO compared to pristine ZnO. The calculated bandgap values from the absorption spectroscopy of the ZnO, MgZnO-1, MgZnO-3, and MgZnO-5 are 3.34 eV, 3.40 eV, 3.51 eV, and 3.57 eV. The prepared MgZnO/p-Si heterojunction diodes showed excellent rectification behavior and enhanced electrical properties for Mg2+ doping. The diode obtained with 5% of Mg2+ had exhibited the ideality factor value of 3.1. Pristine ZnO had exhibited only 66% of photocatalytic methylene blue (MB) degradation efficiency. One hundred percent degradation of MB had been achieved via piezo-photocatalytic effect with 5% Mg2+ doped ZnO, whereas piezocatalysis and photocatalysis had shown 82% and 98% respectively.

Regulating the rectifying effect of zigzag germanium selenide nanoribbons by selective edge decoration

Germanium selenide (GeSe) nanoribbons as quasi-one-dimensional materials are expected to host fascinating tunable electronic properties due to the edge state and quantum confinement effect. Herein, the effect on the electronic structures and transport properties of zigzag GeSe nanoribbon (ZGeSeNR) of different functional passivation groups is systematically studied using a combination of density functional theory and the non-equilibrium Green’s function. The N-, P-, and S-passivated ZGeSeNRs are metallic, while the F-, Cl-, OH-, and H-passivated ones exhibit semiconductor properties. The rectification behavior is found in lateral ZGeSeNR heterojunctions composed of a metal–semiconductor contact, and the rectification performance can be modulated by changing the edge passivation group, the ribbon width, and the length of the scattering region. Especially, the highest rectification ratio (RR) reaches 9.2 106 in the S–H–ZGeSeNR heterojunctions, in which the left and right half-edge atoms are passivated by the S and H groups, respectively. These results are useful for the design of nanoscale rectifiers based on ZGeSeNRs.

Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP2S6 via In-Plane Ionic Migration.

As basic building blocks for next-generation information technologies devices, high-quality p-n junctions based on van der Waals (vdW) materials have attracted widespread interest. Compared to traditional two-dimensional (2D) heterojunction diodes, the emerging homojunctions are more attractive owing to their intrinsic advantages, such as continuous band alignments and smaller carrier trapping. Here, utilizing the long-range migration of Cu+ ions under an in-plane electric field, a lateral p-n homojunction was constructed in the 2D layered copper indium thiophosphate (CIPS). The symmetric Au/CIPS/Au devices demonstrate an electric-field-driven resistance switching (RS) accompanied by a rectification behavior without any gate control. Moreover, such rectification behavior can be continuously modulated by poling voltage. We deduce that the reversable rectifying RS behavior is governed by the effective lateral build-in potential and the change of the interfacial barrier during the poling process. Furthermore, the CIPS p-n homojuction is evidenced by the photovoltaic effect, with the spectral response extending up to the visible region due to the better photogenerated carrier separation efficiency. Therefore, this work provides a facile route to fabricate homojunctions through electric-field-driven ionic migration.

Controllable Low-Bias Rectifying Behaviors Induced by AA-P2 Dopants in Armchair Silicene Nanoribbons with Different Widths

The electronic transport properties and rectifying behaviors of armchair silicene nanoribbons (ASiNRs) were investigated by using first-principles density functional theory, in which the left lead was pristine ASiNR and the right lead was doped ASiNR where two phosphorus (P) atoms replaced a pair of adjacent silicon atoms in the same sublattice A (AA-P2). Two types of AA-P2-doped models were considered for P dopant-substitute silicon atoms at the center or edges. The results showed that the rectification behavior of the system with a large rectifying ratio could be found, which could be modulated by changing the width of the silicene nanoribbons or the position of the AA-P2 dopant. Mechanisms were revealed to explain the rectifying behaviors and provide a theoretical basis for semiconductor rectifier devices.

Ultrasensitive rapid cytokine sensors based on asymmetric geometry two-dimensional MoS2 diodes

The elevation of cytokine levels in body fluids has been associated with numerous health conditions. The detection of these cytokine biomarkers at low concentrations may help clinicians diagnose diseases at an early stage. Here, we report an asymmetric geometry MoS2 diode-based biosensor for rapid, label-free, highly sensitive, and specific detection of tumor necrosis factor-α (TNF-α), a proinflammatory cytokine. This sensor is functionalized with TNF-α binding aptamers to detect TNF-α at concentrations as low as 10 fM, well below the typical concentrations found in healthy blood. Interactions between aptamers and TNF-α at the sensor surface induce a change in surface energy that alters the current-voltage rectification behavior of the MoS2 diode, which can be read out using a two-electrode configuration. The key advantages of this diode sensor are the simple fabrication process and electrical readout, and therefore, the potential to be applied in a rapid and easy-to-use, point-of-care, diagnostic tool.

Universal Behavior of the Coulomb-Coupled Fermionic Thermal Diode.

We propose a minimal model of a Coulomb-coupled fermionic quantum dot thermal diode that can act as an efficient thermal switch and exhibit complete rectification behavior, even in the presence of a small temperature gradient. Using two well-defined dimensionless system parameters, universal characteristics of the optimal heat current conditions are identified. It is shown to be independent of any system parameter and is obtained only at the mean transitions point "-0.5", associated with the equilibrium distribution of the two fermionic reservoirs, tacitly referred to as "universal magic mean".

Boost ionic selectivity by coating bullet-shaped nanochannels with dense polyelectrolyte brushes

The influence of channel geometry on the ionic selectivity and ionic current rectification of soft nanochannels was numerically investigated. The nanochannels coated with polyelectrolyte layers (PELs) are termed as soft nanochannels. The asymmetric category of nanochannels, i.e., bullet-shaped, was considered in this study. When PEL is dense, the ionic partitioning effect cannot be ignored. To this end, through adopting a numerical approach using the finite element method, Poisson–Nernst–Planck and Navier–Stokes equations were solved at steady-state conditions by considering different values of permittivity, diffusivity, and dynamic viscosity for the PEL and the electrolyte. The results show that the PEL–electrolyte property difference leads to a significant improvement of the rectification behavior, especially at low and moderate salt concentrations. This not only highlights the importance of considering different properties for the PEL and the electrolyte but also implies that the rectification behavior of soft nanochannels/nanopores may be improved considerably by utilizing denser PELs. Considering a charge density of 80 mol/m3 and a bulk concentration of 20 mM, we demonstrate that the rectification factors for the bullet nanochannels, from 3.35 by ignoring the ion partitioning effect, can reach the values of 4.88 by considering the ion partitioning effect, respectively.

Autonomous rectification behavior of coal mine safety hazards under a gambling mind: From an evolutionary game perspective

Safety supervision is an important approach for urging coal mining enterprises to ensure safe production. However, in the face of safety supervision, different interests have a gambling mind for their own benefit, which leads to a loss of risk identification. Moreover, the literature on the analysis of coal mine safety supervision through game methods mainly focuses on how to improve the intensity of supervision. Additionally, research on evolutionary game analysis that considers a gambling mind and research that distinguishes between levels of supervisory intensity are lacking. Therefore, this paper takes the main stakeholders involved in the mine safety supervision, namely, the government supervision departments and the coal mining enterprises as research objects. An evolutionary game model is established. The gambling mind, supervisory intensity, joint liability and other factors are considered in the proposed model. Moreover, this paper also conducts a numerical simulation of the evolutionary game model to analyze the stability of stakeholder interactions and to propose methods for coal mine safety supervision procedures based on the analytical results. The simulation results show that improving the risk identification ability of coal mining enterprises is the key factor for urging coal mining enterprises to take the initiative to rectify safety hazards and avoid accidents. Increasing the frequency of supervision without increasing the penalties can also make the system stable in the optimal state for a long period of time. Increasing joint liability is not conducive to the game system maintaining stability, and has no impact on the supervisory efficiency of government supervision departments. The research results hold great theoretical and practical significance for improving the safety and process management of coal mining enterprises.

Electrical characteristics of (AgNPs-PVA)-based Schottky diode and its application as a low-voltage varistor devices

In this report, we studied the influence of silver nanoparticles (AgNPs) on the electrical conductivity of Polyvinyl Alcohol (PVA) as a semiconductor nanocomposites active layer. Here, the Schottky junction is constructed by mechanically pressing a copper (Cu) electrode onto a AgNPs-PVA nanocomposite, which shows rectification behavior at room temperature. The synthesis of silver nanoparticles (AgNPs) was achieved by the physical reduction of silver nitrate using an ultraviolet lamp. The nanocomposite films were created using a casting technique. An ultraviolet spectrophotometer (UV–vis), which displayed maximum absorbance at 430 nm, was used to confirm the synthesis of AgNPs and carry out the optical band gap. The charge carrier transport properties of AgNPs-PVA film were investigated by using impedance spectroscopy and I–V measurements. Then, AC impedance analysis was used to determine grain and grain boundary resistances; current-voltage analysis enabled the barrier height (Φ) to be determined. Moreover, the metal/semiconductor (Cu/AgNPs-PVA) Schottky barrier was confirmed as an equivalent circuit model via the Nyquist plot. Based on thermoionic emission theory, the characteristic I–V induced rectifying Schottky behavior can be understood. Moreover, the AgNPs-PVA nanocomposite exhibited hysteresis behavior under multiple repetitive measurements. For low voltage varistor devices, the nonlinear behavior may be completely utilized.

Waveguide-Integrated MoTe2 p-i-n Homojunction Photodetector.

Two-dimensional (2D) materials, featuring distinctive electronic and optical properties and dangling-bond-free surfaces, are promising for developing high-performance on-chip photodetectors in photonic integrated circuits. However, most of the previously reported devices operating in the photoconductive mode suffer from a high dark current or a low responsivity. Here, we demonstrate a MoTe2 p-i-n homojunction fabricated directly on a silicon photonic crystal (PC) waveguide, which enables on-chip photodetection with ultralow dark current, high responsivity, and fast response speed. The adopted silicon PC waveguide is electrically split into two individual back gates to selectively dope the top regions of the MoTe2 channel in p- or n-types. High-quality reconfigurable MoTe2 (p-i-n, n-i-p, n-i-n, p-i-p) homojunctions are realized successfully, presenting rectification behaviors with ideality factors approaching 1.0 and ultralow dark currents less than 90 pA. Waveguide-assisted MoTe2 absorption promises a sensitive photodetection in the telecommunication O-band from 1260 to 1340 nm, though it is close to MoTe2's absorption band-edge. A competitive photoresponsivity of 0.4 A/W is realized with a light on/off current ratio exceeding 104 and a record-high normalized photocurrent-to-dark-current ratio of 106 mW-1. The ultrasmall capacitance of p-i-n homojunction and high carrier mobility of MoTe2 promise a high dynamic response bandwidth close to 34.0 GHz. The proposed device geometry has the advantages of employing a silicon PC waveguide as the back gates to build a 2D material p-i-n homojunction directly and simultaneously to enhance light-2D material interaction. It provides a potential pathway to develop 2D material-based photodetectors, laser diodes, and electro-optic modulators on silicon photonic chips.

Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner.

Thermal management is a critical task for highly integrated or high-power semiconductor devices. Low dimensional materials including graphene and single-layer hexagonal boron nitride (BN) are attractive candidates for this task because of their high thermal conductivity, semi-conductivity and other excellent physical properties. The similarities in crystal structure and chemistry between graphene and boron nitride provide the possibility of constructing graphene/BN heterostructures bearing unique functions. In this paper, we investigated the interfacial thermal transport properties of graphene/BN nanosheets via non-equilibrium molecular dynamics (NEMD) simulations. We observed a significant thermal rectification behavior of these graphene/BN nanosheets, and the rectification ratio increased with the system length increases up to 117%. This phenomenon is attributed to the mismatch of out-of-plane phonon vibration modes in two directions at the interface. In addition, we explored the underlying mechanism of the length dependence of the thermal transport properties. The results show promise for the thermal management of this two-dimensional heterostructure in an actively tunable manner.