Reconfigurable Operation Research Articles

Multibarrier Collaborative Modulation Devices with Ultra-High Logic Operation Density.

The demands for highly miniaturized and multifunctional electronics are rapidly increasing. As scaling-down processes of transistors are restricted by physical limits, reconfigurable electronics with switchable operation functions for different tasks are developed for higher function integration based on split- or vertical-dual-gate structures. To promote the present reconfigurable electronics and exceed the function integration limit, the critical issue is to integrate complex operations into simple circuit forms by establishing more control dimensions. This work proposes a multibarrier collaborative (MBC) modulation architecture to increase the control dimension by multiple forms of potential barriers and achieves combinational and reconfigurable logic operations by a single MBC device. The MBC architecture exhibits ultrahigh logic operation density, including 58.8% area reduction for multiplexer operations and 71.4% area reduction for 4-logic reconfigurable operations. Besides, a hardware security module composed of 4 MBC devices implementing 8 types of logic operations is demonstrated. This work reveals an effective design of function integration for next-generation electronics.

Boolean Computation in Single-Transistor Neuron.

Brain neurons exhibit far more sophisticated and powerful information-processing capabilities than the simple integrators commonly modeled in neuromorphic computing. A biological neuron can in fact efficiently perform Boolean algebra, including linear nonseparable operations. Traditional logic circuits require more than a dozen transistors combined as NOT, AND, and OR gates to implement XOR. Lacking biological competency, artificial neural networks require multilayered solutions to exercise XOR operation. Here, it is shown that a single-transistor neuron, harnessing the intrinsic ambipolarity of graphene and ionic filamentary dynamics, can enable in situ reconfigurable multiple Boolean operations from linear separable to linear nonseparable in an ultra-compact design. By leveraging the spatiotemporal integration of inputs, bio-realistic spiking-dependent Boolean computation is fully realized, rivaling the efficiency of a human brain. Furthermore, a soft-XOR-based neural network via algorithm-hardware co-design, showcasing substantial performance improvement, is demonstrated. These results demonstrate how the artificial neuron, in the ultra-compact form of a single transistor, may function as a powerful platform for Boolean operations. These findings are anticipated to be a starting point for implementing more sophisticated computations at the individual transistor neuron level, leading to super-scalable neural networks for resource-efficient brain-inspired information processing.

Spin-to-charge conversion via dual-mode ferromagnetic resonance in Ta/NiFe/FeMn/CoFeB multilayer

The precise engineering of microwave absorption frequencies is of paramount importance in the advancement of spintronic-based RF devices. In the pursuit of this objective, magnetic thin films demonstrate unrivaled efficacy in enabling external modulation of their microwave responses in a reconfigurable manner. Here, we demonstrate dual-frequency ferromagnetic resonance modes and corresponding spin-to-charge conversion efficiency in thin film structures comprising Ta/NiFe/FeMn/CoFeB multilayer. A systematic thickness variation of the NiFe layer (i.e., 4–20 nm) has been undertaken to elucidate the impact on both static and dynamic properties across the multilayer structure. The presence of two distinct magnetic layers manifests in the emergence of two-step magnetic hysteresis loops, which are incorporated with unique resonant modes. The separation between the resonant fields shows tunable properties with excitation frequencies, thereby offering a wide range of reconfigurable operating parameters. The effective damping parameter has shown a decrement with increasing thickness of the NiFe layers. The effective spin mixing conductance for the NiFe layer was found to be 7.4 ± 0.6 nm−2. The spin-to-charge conversion within these structures has been demonstrated through measurements of the inverse spin Hall effect. Systematic thickness variation revealed that the prominent voltage drop was observed in the NiFe layer compared to the CoFeB layer. Considering the opposite spin Hall angles of Ta and FeMn layer, the direction of the spin flow and spin-to-charge conversion efficiency are summarized.

Reconfigurable terahertz stretchable spoof surface plasmon polariton waveguide for filter applications

In this paper, a reconfigurable terahertz spoof surface plasmon polariton (SPP) waveguide is proposed on a stretchable polydimethylsiloxane (PDMS) substrate. The SPP unit incorporates a folded stub and a conventional V-shaped SPP groove, enhancing the equivalent capacitance and consequently reducing the cutoff frequency. The cutoff frequency of the proposed SPP unit can be tuned from 285 to 390 GHz with stretchable factors of 1 ∼ 1.2, thereby achieving a reconfigurable operating frequency. The horizontal dimension of the proposed SPP waveguide can be tuned from 6.36 mm to 7.12 mm. Moreover, the SPP waveguide can generate transmission continuous phase shifts of −30°, −60°, −90°, and −120° with stretchable factors of 1.05, 1.1, 1.15, and 1.2, respectively, in the 150–190 GHz band. Applying the characteristic mode theory, a split ring resonator (SRR) functions as the equivalent magnetic dipole, which remains unaffected by stretchable deformation. When loaded with four SRR cells, the proposed SPP waveguide generates a tunable passband with a fixed notched frequency at 193 GHz. Another stretchable SPP resonator serves as the equivalent electric dipole, operating from 284 GHz to 256 GHz in 1∼1.2 stretchable states. By loading three SPP resonators, the SPP waveguide can achieve a passband for the initial state, and a tunable stopband is introduced under 1.1 and 1.2 stretchable states. The proposed stretchable method provides a promising solution for planar terahertz components and systems with reconfigurable functions.

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables—ferroelectric polarization and magnetization—we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.

2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching.

The attractive physical properties of two-dimensional (2D) semiconductors in group IVA-VIA have been fully revealed in recent years. Combining them with 2D ambipolar materials to construct van der Waals heterojunctions (vdWHs) can offer tremendous opportunities for designing multifunctional electronic and optoelectronic devices, such as logic switching circuits, half-wave rectifiers, and broad-spectrum photodetectors. Here, an optimized SnSe0.75S0.25 is grown to design a SnSe0.75S0.25/MoTe2 vdWH for logic operation and wide-spectrum photodetection. Benefiting from the excellent gate modulation under the appropriate sulfur substitution and type-II band alignment, the device exhibits reconfigurable antiambipolar and ambipolar transfer behaviors at positive and negative source-drain voltage (Vds), enabling stable XNOR logic operation. It also features a gate-modulated positive and negative rectifying behavior with rectification ratios of 265:1 and 1:196, confirming its potential as half-wave logic rectifiers. Besides, the device can respond from visible to infrared wavelength up to 1400 nm. Under 635 nm illumination, the maximum responsivity of 1.16 A/W and response time of 657/500 μs are achieved at the Vds of -2 V. Furthermore, due to the strong in-plane anisotropic structure of SnSe0.75S0.25-alloyed nanosheet and narrow bandgap of 2H-MoTe2, it shows a broadband polarization-sensitive function with impressive photocurrent anisotropic ratios of 15.6 (635 nm), 7.0 (808 nm), and 3.7 (1310 nm). The direction along the maximum photocurrent can be reconfigurable depending on the wavelengths. These results indicate that our designed alloyed SnSe0.75S0.25/MoTe2 vdWH has reconfigurable logic operation and broadband photodetection capabilities in 2D multifunctional integrated circuits.

Nonvolatile photoelectric memristor for reconfigurable Boolean logic operation and data storage

Photoelectric memristors have the advantages of highly parallel computing and large-scale interconnection, which provides a promising method for reconfigurable logic operations and greatly promotes the development of new memory computing technology. In this paper, a photoelectric memristor was fabricated using natural gelatin and water-soluble CdSe/ZnS quantum dots with a shell structure. Under light stimulation, the device undergoes photoelectric effects in the dielectric layer, generating electron–hole pairs and causing the device to transition from a high-resistance state to a low-resistance state. Seven nonvolatile logic functions are achieved using three wavelengths of light excitation devices. Compared with traditional electrically controlled memristors, emerging photoelectric memristors are more attractive because they can integrate the advantages of photons and electrons.

Reconfigurable Fractional-Order Operator and Bandwidth Expansion Suitable for PIα Controller

Reconfigurable Fractional-Order Operator and Bandwidth Expansion Suitable for PI^α Controller

A High-Efficiency, Ultrawide-Dynamic-Range Radio Frequency Energy Harvester Using Adaptive Reconfigurable Technique

This paper presents a novel adaptive reconfigurable rectifier architecture for radio frequency energy harvesting (RFEH); in addition, a new metric for high-efficiency dynamic range (DR) is proposed. The presented rectifier architecture is based on a double-sided diode-feedback cross-coupled differential-drive rectifier (CCDR) structure incorporating self-body bias for reconfigurable operation. An adaptive structure based on a Schmitt trigger is proposed to adaptively switch the rectifier connection without auxiliary voltage (Vaux), with two rectifier stages in parallel at low power and in series at high power. The system is simulated at a 180 nm CMOS process and the results show more than 17 dB DR at 900 MHz, with efficiency higher than 50% at a 100 kΩ load.

Development of PLC-Based Hardware Test-Bench Prototype for Solar-Wind-Battery-Based Microgrid System’s Control Algorithm Validation

Programmable Logic Controllers (PLCs) are gaining traction in microgrid operation due to their real-time deployment, reliable and robust operation, and fast response, even in harsh environments. Recognizing the critical need for robust and reconfigurable microgrid control and operation, this research proposes a hardware test-bench prototype using the Reconfigurable Allen-Bradley—Micro820/2080-LC20-20QBB PLC to demonstrate control algorithms aiming for efficient control, energy management, and resilient microgrid automation. The design and construction of a prototype controller test bench, along with the PLC configuration, wiring diagrams, and control logic, constitute the significant contributions of this research. The proposed controller test bench’s performance is evaluated through similar condition simulations in the presence of disturbances induced by the reduced contributions of renewable energy sources, such as solar and wind. The results illustrate the effectiveness of the developed control algorithm implemented in the proposed controller, ensuring the stable operation of the microgrid. Consequently, this work advances the simulation-based validation of microgrid control algorithms and provides insights into the practical application of a PLC-based hardware test bench under various environmental conditions.

Design of a fractal triple-band reconfigurable filtering antenna for multiband applications

This letter constitutes a novel triple-band reconfigurable filtering antenna used for Bluetooth, WiMAX and WLAN applications. First, a compact triple-band reconfigurable filter is instigated which is composed of two pairs of Stepped Impedance Resonators (SIRs) and a pair of Uniform Impedance Resonators (UIRs). The SIRs are entrenched at the upper and lower half of feed lines operating at 2.4 and 5.4 GHz, respectively. A pair of UIRs operating at 3.5 GHz is folded and enclosed near the upper SIR. A shunt stub is tapped at the source-load feeding lines to upgrade the selectivity of the filter. The proposed filter uses four PIN diodes to initiate different reconfigurable multiband operations. A fractal antenna is implemented with a modified binary tree topology. The ground plane of the proposed antenna is reformed with a stub. The improved antenna structure enables three radiating bands with enhanced performance. Later, the designed filter is integrated into the antenna to implement the intended triple-band reconfigurable filtering antenna.

2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory.

Intensive research on optoelectronic memory (OEM) devices based on two-dimensional (2D) van der Waals heterostructures (vdWhs) is being conducted due to their distinctive advantages for electrical-optical writing and multilevel storage. These features make OEM a promising candidate for the logic of reconfigurable operations. However, the realization of nonvolatile OEM with broadband absorption (from visible to infrared) and a high switching ratio remains challenging. Herein, we report a nonvolatile OEM based on a heterostructure consisting of rhenium disulfide (ReS2), hexagonal boron nitride (hBN) and tellurene (2D Te). The 2D Te-based floating-gate (FG) device exhibits excellent performance metrics, including a high switching on/off ratio (∼106), significant endurance (>1000 cycles) and impressive retention (>104 s). In addition, the narrow band gap of 2D Te endows the device with broadband optical programmability from the visible to near-infrared regions at room temperature. Moreover, by applying different gate voltages, light wavelengths, and laser powers, multiple bits can be successfully generated. Additionally, the device is specifically designed to enable reconfigurable inverter logic circuits (including AND and OR gates) through controlled electrical and optical inputs. These significant findings demonstrate that the 2D vdWhs with a 2D Te FG are a valuable approach in the development of high-performance OEM devices.

All-optical high-order subharmonic mixer with a high signal-to-noise ratio and stable performance.

A photonics-based high-order subharmonic mixer, which enables a low-frequency LO source to be used for high-frequency RF signal frequency downconversion, is presented. It is based on an optically injected semiconductor laser, which is oscillated in the period-one state, sandwiched between two optical phase modulators. It has the advantages of a simple and compact structure, wide bandwidth, absence of electrical components, reconfigurable subharmonic mixing operation, stable output IF signal performance, high signal-to-noise ratio, infinite LO-to-RF port isolation, and high LO-to-IF port isolation. Furthermore, it is suitable for use in remote antenna applications. We set up a proof-of-concept experiment that demonstrates a reconfigurable second-, fourth-, sixth-, and eighth-order subharmonic mixing operation for different input RF signal frequencies and powers. The experimental results also demonstrate that the proposed structure exhibits a stable output IF signal performance, which overcomes the IF signal phase stability problem in the reported high-order subharmonic mixers.

A Novel Reconfigurable Duplexer Supporting FDD, TDD, and FD Operation With Controllable Center Frequency and Enhanced Self-Interference Isolation

A Novel Reconfigurable Duplexer Supporting FDD, TDD, and FD Operation With Controllable Center Frequency and Enhanced Self-Interference Isolation

All-fiber synapse based on Ge2Sb2Te5 for reconfigurable logic operations

All-fiber synapse based on Ge₂Sb₂Te₅ for reconfigurable logic operations

Operation of a mesh grid optic-fiber sensor network with self-reconfigurable function

This paper presents a mesh grid topology for an optical fiber sensor network, which has an efficient structure for intelligent monitoring and reconfigurable protection operations. The integration of light sources and detectors within the network plays a crucial role in achieving comprehensive monitoring of the entire sensor network. Moreover, we have designed multiple nodes for sensing channels with distinct function to maximize the benefits of the topology in terms of network resilience. Finally, centralized and discrete signal processing schemes for network control systems have been demonstrated to be effective under various application conditions.

A resilient self‐healing approach for active distribution networks considering dynamic microgrid formation

AbstractA large number of renewable distributed generation (DG) systems connect to the distribution network, affecting the structure of the traditional distribution network and forming an active distribution network (ADN). Although the accelerating grid penetration of DGs brings significant challenges to the distribution network operation, the islanded operation capability of DGs provides a flexible solution to the self‐healing of ADNs from faults. To ensure that ADN can quickly recover and reconfigure in the event of a fault and continue to maintain safe, economical, and reliable operation, this paper proposes a dynamic microgrid formation method for ADNs combined with the dynamic network reconfiguration and intentional islanding operation of DGs. An optimization model is designed to represent the proposed self‐healing method, maximizing the load restoration and minimizing the DG cost, line network loss, and voltage excursion simultaneously. A binary hybrid optimization solver is applied to pursue the optimal self‐healing schedules from the optimization model. The self‐healing method is evaluated on the Institute of Electrical and Electronics Engineers (IEEE) 33‐node system and the IEEE 123‐node system, which indicate its rationality and effectiveness fully verified. By optimizing the on and off states of the normally open switches and the on‐grid and off‐grid operation states of DGs, ADNs not only get healed with minimum load curtailment, but also achieve minimal DG generation cost, network loss, and node voltage deviation. In addition, compared with traditional solvers, the proposed solver has a slightly higher computational time than the corresponding solver.

Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics

AbstractDeveloping 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous reports that have integrated various functions in a single 2D heterostructures device, most of those devices are based on a complex multilayer heterostructure or an air‐unstable channel material, limiting their ability to be applied in integrated circuits. There is an urgent need to develop 2D reconfigurable multifunctional devices that have a simple structure and stable electrical properties. In this work, a side‐gate reconfigurable device is illustrated based on simple BN‐MoS2 vdW heterostructures. Three different functions in a single device have been achieved, including a diode, double‐side‐gate reconfigurable logic transistor, and top floating gate memory. A lateral n+‐n homojunction is created along the MoS2 channel and the rectification ratio is above 105. Reconfigurable logic operations (OR, AND) can be achieved in a single double‐side‐gate device and the current on/off ratio is ≈t 104. Moreover, the device can act as a floating gate memory under back gate operation. Those results pave the way for integrating the same reconfigurable multifunctional devices to realize complex electronic systems.

Electrically reconfigurable metamaterial absorber operating in C band

Electrically reconfigurable metamaterial absorber operating in C band

Dual‐logic‐in‐memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure

AbstractThe rapid advancement of AI‐enabled applications has resulted in an increasing need for energy‐efficient computing hardware. Logic‐in‐memory is a promising approach for processing the data stored in memory, wherein fast and efficient computations are possible owing to the parallel execution of reconfigurable logic operations. In this study, a dual‐logic‐in‐memory device, which can simultaneously perform two logic operations in four states, is demonstrated using van der Waals ferroelectric field‐effect transistors (vdW FeFETs). The proposed dual‐logic‐in‐memory device, which also acts as a two‐bit storage device, is a single bidirectional polarization‐integrated ferroelectric field‐effect transistor (BPI‐FeFET). It is fabricated by integrating an in‐plane vdW ferroelectric semiconductor SnS and an out‐of‐plane vdW ferroelectric gate dielectric material—CuInP2S6. Four reliable resistance states with excellent endurance and retention characteristics were achieved. The two‐bit storage mechanism in a BPI‐FeFET was analyzed from two perspectives: carrier density and carrier injection controls, which originated from the out‐of‐plane polarization of the gate dielectric and in‐plane polarization of the semiconductor, respectively. Unlike conventional multilevel FeFETs, the proposed BPI‐FeFET does not require additional pre‐examination or erasing steps to switch from/to an intermediate polarization, enabling direct switching between the four memory states. To utilize the fabricated BPI‐FeFET as a dual‐logic‐in‐memory device, two logical operations were selected (XOR and AND), and their parallel execution was demonstrated. Different types of logic operations could be implemented by selecting different initial states, demonstrating various types of functions required for numerous neural network operations. The flexibility and efficiency of the proposed dual‐logic‐in‐memory device appear promising in the realization of next‐generation low‐power computing systems.image