Recombination Centers Research Articles

Slow-Release Effect Assisted Crystallization for Sequential Deposition Realizes Efficient Inverted Perovskite Solar Cells.

The two-step sequential deposition strategy has been widely recognized in promoting the research and application of perovskite solar cells, but the rapid reaction of organic salts with lead iodide inevitably affects the growth of perovskite crystals, accompanied by the generation of more defects. In this study, the regulation of crystal growth was achieved in a two-step deposition method by mixing 1-naphthylmethylammonium bromide (NMABr) with organic salts. The results show that the addition of NMABr effectively delays the aggregation and crystallization behavior of organic salts; thereby, the growth of the optimal crystal (001) orientation of perovskite is promoted. Based on this phenomenon of delaying the crystallization process of perovskite, the "slow-release effect assisted crystallization" is defined. Moreover, the incorporation of the Br element expands the band gap of perovskite and mitigates material defects as nonradiative recombination centers. Consequently, the power conversion efficiency (PCE) of the enhanced perovskite solar cells (PSCs) reaches 20.20%. It is noteworthy that the hydrophobic nature of the naphthalene moiety in NMABr can enhance the humidity resistance of PSCs, and the perovskite phase does not decompose for more than 3000 h (30-40% RH), enabling it to retain 90% of its initial efficiency even after exposure to a nitrogen environment for 1200 h.

Eliminating Voids and Residual PbI2 beneath a Perovskite Film via Buried Interface Modification for Efficient Solar Cells.

The commercialization process of perovskite solar cells (PSCs) is markedly restricted by the power conversion efficiency (PCE) and long-term stability. During fabrication and operation, the bottom interface of the organic-inorganic hybrid perovskite layer frequently exhibits voids and residual PbI2, while these defects inevitably act as recombination centers and degradation sites, affecting the efficiency and stability of the devices. Therefore, the degradation and nonradiative recombination originating from the buried interface should be thoroughly resolved. Here, we report a multifunctional passivator by introducing malonic dihydrazide as an interfacial chemical bridge between the electron transport layer and the perovskite (PVK) layer. MADH with hydrazine groups improves the surface affinity of SnO2 and provides nucleation sites for the growth of PVK, leading to the reduced residual PbI2 and the voids resulting from the inhomogeneous solvent volatilization at the bottom interface. Meanwhile, the hydrazine group and carbonyl group synergistically coordinate with Pb2+ to improve the crystal growth environment, reducing the number of Pb-related defects. Eventually, the PCE of the PSCs is significantly enhanced benefiting from the reduced interfacial defects and the increased carrier transport. Moreover, the reductive nature of hydrazide further inhibits I2 generation during long-term operation, and the device retains 90% of the initial PCE under a 1 sun continuous illumination exposure of 700 h.

Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors

Al doped α-GaOOH nanorod arrays were grown on FTO via hydrothermal processes by using gallium nitrate and aluminum nitrate mixed aqueous solutions with fixed 1:1 mole ratio as precursors. With increasing the gallium nitrate precursor concentrations, the Ga/Al atom ratios in nanorod arrays increase from 0.36 to 2.08, and the length becomes much longer from 650 nm to 1.04 μm. According to the binding energy difference between Ga 2p3/2 core level and its background in x-ray photoelectron spectroscopy, the bandgap is estimated to be around 5.3 ± 0.2 eV. Al doped α-GaOOH nanorod array/FTO photoelectrochemical photodetectors show enhanced self-powered solar-blind UV photodetection properties, with the decrease of Ga precursor concentrations. The maximum responsivity at 255 nm is 0.09 mA W−1, and the fastest response time can reach 0.05 s. The improved photoresponse speed is ascribed from much shorter transportation route, accelerated carrier recombination by recombination centers, and smaller charge transfer resistance at the α-GaOOH/electrolyte interface with decreasing the gallium nitrate precursor concentrations. The stability and responsivity should be further improved. Nevertheless, this work firstly demonstrates the realization of self-powered solar-blind UV photodetection for α-GaOOH nanorod arrays on FTO via Al doping.

Modulating secondary growth of perovskite grains through residual solvent evaporation

Over the past decade, perovskite solar cells (PSCs) have attracted enormous attention due to their high performance. One key to fabricating high-quality perovskite films lies in controlling the volatilization rate of residual solvents during the annealing process. This study systematically investigates how different protective substrates affect the volatilization rate of residual solvent in perovskite films. By adjusting the direction and rate of evaporation, the supersaturation time of the solution was precisely controlled, leading to effective recrystallization of the grains. Concurrently, the annealing time was optimized to enhance film quality further. This optimization aimed to increase crystallinity, reduce defects, and thereby minimize non-radiative recombination centers. Implementing these methodologies, particularly the use of filter paper as a protective substrate during a 2-minute annealing process, significantly improved the fill factor (FF) and open-circuit voltage (VOC) of the PSCs. This led to a remarkable 5.26% improvement in power conversion efficiency (PCE) compared to control devices. The strategies employed in this work demonstrate significant potential in improving PSC film quality. This approach not only advances our understanding of film formation dynamics but also provides a practical guideline for future PSC fabrication.

Influence of FRET, charge separation, and density of defect states on the improvement of UV light-driven photocatalytic activity of PMMA capped ZnO nanomaterials

This study employs oxidative polymerization, co-precipitation, and ex-situ surface capping techniques to fabricate pristine PMMA, ZnO, and PMMA-capped ZnO specimens with varying PMMA concentrations. X-ray diffraction reveals reduced directional growth of ZnO, while Fourier transform infrared spectroscopy confirms PMMA chain bonding with ZnO in PMMA-capped specimens. Scanning electron microscopy illustrates decreased average length and thickness of ZnO nanoplates post-surface modification, indicating a robust interaction between PMMA and ZnO. X-ray photoelectron spectroscopy identifies suppressed defects, including zinc interstitials and oxygen vacancies, affirming ZnO surface capping by PMMA. Absorption spectra display a blue shift in band-edge or increased bandgap, attributed to the combined effects of band alignment offset and reduced oxygen vacancy states. Luminescence spectra show gradual quenching linked to PMMA content increase, with defect-related emission suppression attributed to ZnO surface capping. UV emission suppression is ascribed to donor concentration-dependent Förster resonance energy transfer (FRET) from PMMA to ZnO. Photocatalytic tests reveal enhanced efficiency in PMMA-capped ZnO catalysts attributed to synergies involving charge separation, bulk recombination centers, oxygen vacancy states, and FRET. Efficiency improves with higher PMMA content, aligning with changes in emission intensity. The study demonstrates emission intensities' tunability through surface capping and donor concentration-dependent FRET, ultimately influencing degradation efficiency.

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely, nonradiative recombination centers and deep-state radiative recombination centers, on the carrier recombination dynamics is an essential task. By using the combination of time-resolved photoluminescence and positron annihilation spectroscopy (PAS) measurements, the origins of major MGRCs in the state-of-the-art GaN epilayers, bulk crystals, and Mg-implanted layers were identified, and their concentrations were quantified for deriving the capture coefficients of minority carriers. In this article, potential standardization of the room-temperature photoluminescence lifetime for the near-band-edge emission (τPLRT) as the concentration of major MGRCs well below the detection limit of PAS is proposed. For n-GaN substrates and epilayers grown from the vapor phase, τPLRT was limited by the concentration of carbon on N sites or divacancies comprising a Ga vacancy (VGa) and a N vacancy (VN), [VGaVN], when carbon concentration was higher or lower, respectively, than approximately 1016 cm−3. Here, carbon and VGaVN act as major deep-state radiative and nonradiative recombination centers, respectively, while major MGRCs in bulk GaN crystals were identified as VGa(VN)3 vacancy clusters in Na-flux GaN and VGa or VGaVN buried by a hydrogen and/or VGa decorated with oxygen on N sites, VGa(ON)3–4, in ammonothermal GaN. The values of τPLRT in n-GaN samples are compared with those of p-GaN, in which τPLRT was limited by the concentration of VGa(VN)2 in Mg-doped epilayers and by the concentrations of VGaVN and (VGaVN)3 in Mg-implanted GaN right after the implantation and after appropriate activation annealing, respectively.

Highly efficient and stable perovskite solar cell with sodium glycinate additive

Organic halide perovskite solar cells (PSCs) with high power conversion efficiency (PCE) and low manufacturing cost have been attracting considerable attention. However, defects in perovskite as recombination centers and ion migration paths seriously deteriorate the optoelectronic performance of PSCs. Herein, a facile strategy is devised by introducing sodium glycinate (SG) mulit-functional additive into perovskite to passivate defects. In this way, the typical defects of mismatched leads in perovskite can be passivated by forming ionic bond with carboxylate radical or coordination bond with amino groups of SG. Also, the SG molecules with cross-linking function could improve the grain sizes of perovskite to reduce defects and increase light absorption. Besides, sodium ions of SG can impede the ion migration in perovskite and strengthen the interfacial charge transfer ability. As a result, the PSCs assembled under air condition with SG additive achieved a champion conversion efficiency of 19.32 % due to the comprehensive action of SG, and an improved stability under work and storage conditions. This provides an economical and effective strategy for the industrialization of PSCs.

Fabrication of CZTS Thin Film on Flexible Cu-Foil Substrate by Two-Stage Process

In this research, CZTS thin films grown on flexible Cu-foil with varying sulfurization times. Various characterization methods were employed, including X-ray diffraction (XRD), Raman spectroscopy, energy-dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), optical transmission, and photoluminescence (PL) measurements. Distinctive diffraction peaks characteristic of the kesterite CZTS phase were observed in the XRD analysis, occurring around at 2θ= 28.45° (112), 47° (220/204), and 56° (312/116). Additionally, some secondary phases such as Cu2S and SnS were identified. Raman spectroscopy confirmed the presence of the kesterite phase, with a prominent peak detected at approximately ~336 cm-1, attributed to sulfur atom vibrations within the kesterite structure. Apart from CZTS structure, minor peaks suggesting the presence of the Cu2SnS3 (CTS) phase was detected. EDX analysis revealed compositions with Cu-poor content and Zn-rich content across all samples, with slight variations in sulfurization dwell times affecting the chemical composition. SEM imaging at different magnifications showed alterations in surface morphology and grain structures. Films sulfurized for 30 s and 60 s displayed a granular structure morphology, while extending the dwell time to 120 s resulted in a more compact surface morphology. Optical band gap values ranged between 1.57 and 1.60 eV. PL measurements consistently exhibited strong PL emission around 1.25 eV for all samples, attributed to various transitions within the CZTS structure. The absence of observable band-to-band transitions in the PL measurements indicated the presence of intrinsic defect levels and recombination centers within CZTS. Overall, it was demonstrated in this study that CZTS thin films can be produced on flexible Cu-foils with short sulfurization times, thereby expanding the application areas of CZTS thin-film solar cells.

A particular mechanism of the effect of lone pair E TeIV dopant atoms on visible-light photocatalytic activity of anatase TiO2

It was found that small additives of E TeIV species (< 1 at%) notably enhance the visible-light photocatalytic activity of polycrystalline anatase TiO2. This effect can tentatively be attributed to the neutralization of the neighboring surface- located oxygen vacancy, acting as a recombination center for photogenerated holes and electrons, by the dopant stereochemically active lone electron pair E.

Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

To investigate the carrier recombination processes in GaN crystals grown by the low-pressure acidic ammonothermal (LPAAT) method, the photoluminescence (PL) spectra and PL lifetimes of LPAAT GaN crystals grown on acidic ammonothermal (AAT) GaN seed crystals were correlated with the growth polarity and species/concentration of point defects. The PL spectra of LPAAT GaN grown toward the (0001¯) direction (−c region), which provided the highest growth rate, exhibited a predominant near-band edge (NBE) emission. Neither bandgap narrowing nor Burstein–Moss shifts due to high concentration residual impurities were observed in the NBE emissions, indicating higher purity than the previously reported AAT GaN crystals. In addition, strain-induced energy shift or energy broadening of excitonic emission peaks was not observed, indicating excellent crystal coherency. Because of the reduced concentration of midgap recombination centers, a record-long room-temperature PL lifetime for the NBE emission of ammonothermal GaN (40 ps) was obtained from the −c region. Meanwhile, the PL spectra also exhibited the yellow and blue luminescence bands originating from particular deep-state radiative recombination centers. The major vacancy-type defects acting as midgap recombination centers are identified as vacancy complexes comprising a Ga vacancy (VGa) and a few N vacancies (VN), namely, VGa(VN)n buried by H and/or O, where n is an integer. Further reduction of such defect complexes will allow less compensated stable carrier concentration in the LPAAT GaN crystals.

Laser ablation of thin SiN x layer coated on silicon wafer—evaluation of process performance for PERC solar cell application

In fabricating passivated emitter and rear contact (PERC) solar cells, creating small openings on the SiN x coated silicon substrate to establish metal contacts necessitates using a nanosecond pulsed green laser for ablation. However, the thermal nature of laser ablation poses a challenge. Excessive nitrogen diffusion from SiN x into the silicon substrate can compromise the electrical performance of solar cells. Therefore, this study aims to comprehensively understand how laser parameters impact the electrical properties of such solar cells. PERC solar cell precursors were initially fabricated by ablating the SiN x layer at four laser fluences, each corresponding to different regimes: solid, liquid, vapor, and phase explosion. Subsequently, various optical, chemical, and electrical characterizations were conducted on the solar cell precursors. Complete PERC solar cells were also fabricated to measure quantum efficiency (QE). In the solid regime, SiN x removal is precise, with minimal thermal damage, resulting in a nitrogen concentration of approximately 0.15%. Photoluminescence count and carrier lifetime are notably higher by 21% in the solid regime compared to the explosive regime. The QE measurement at 984 nm quantitatively assesses rear-side recombination losses. Notably, 26% of the area exhibits a 56% QE in the solid state, while this number drops to around 22% in the explosive state. This decline can be attributed to increased thermal damage in the explosive regime, which augments recombination centers and diminishes the solar cell performance. PERC solar cells ablated in the solid regime showcase lower subsurface damage, superior electrical characteristics, and higher performance than those ablated in the explosive regime.

Correlative Micro‐Photoluminescence Study on Hybrid Quantum‐Well InGaN Red Light‐Emitting Diodes

To investigate nonradiative recombination processes in indium gallium nitride (InGaN)‐based red light‐emitting diodes (LEDs), an InGaN‐based red LED with a hybrid quantum well (QW) structure consisting of red and blue single quantum wells (SQWs) is characterized by micro‐photoluminescence (μ‐PL) spectroscopy. The μ‐PL mapping of the red emission reveals numerous dark spots with various sizes and contrasts. Not only the red and blue (from a blue SQW) but green emission bands are observed at some red dark spots, suggesting that indium (In) segregation is one of the causes of nonradiative recombination in the red emission. Comparing the blue and green emission images to the red emission image reveals that the dark spots in the intensity map of the red emission can be classified into four types. Through this correlative analysis, the red dark spots associated with the dark areas in the intensity map of the blue emission are attributed to the major nonradiative recombination centers in the red emission.

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In HJs, in contrast to Schottky diodes, the capacitance and AC conductance show a prominent frequency and temperature dependence, suggesting the presence of two temperature activation processes with activation energies of 0.17 and 0.1 eV. The deep trap spectra of the Schottky diodes and HJs differ by the absence in the HJ of deep electron traps E2* with level near Ec − 0.7 eV considered to be an important center of non-radiative recombination. This correlates with the observed increase in the diffusion length of non-equilibrium charge carriers in the HJs to 370 nm compared to 240 nm in the Schottky diodes. The diffusion length of charge carriers in p-NiO was found to be quite short, 30 nm. Possible reasons for the observed differences and possible origin of the minority-trap-like feature commonly reported to be present in the deep level spectra of HJs and also observed in our experiments are discussed.

Indirect evidence of Bi3+ valence change and dual role of Bi3+ in trapping electrons and holes for multimode X-ray imaging, anti-counterfeiting, and non-real-time force sensing

Discovering bismuth based smart materials that can respond to thermal, mechanical, and wide range X-ray to infrared photon excitation remains a challenge. Such materials have various uses like in advanced information encryption. In this work, valence state change between Bi2+, Bi3+, and Bi4+, and the dual role of Bi3+ in trapping electrons and holes have been studied in Bi3+ or/and Ln3+ (Ln=Tb or Pr) doped LiScGeO4 family of compounds by vacuum referred binding energy (VRBE) diagram construction, thermoluminescence, and spectroscopy. Electron release from Bi2+ has been evidenced. It can be used to experimentally determine the VRBE in the Bi2+ 2P1/2 ground state and to realize Bi3+ negative quenching luminescence. Particularly, a new force induced charge carrier storage phenomenon has been discovered for non-real-time force recording. Wide range of emission tailorable afterglow, unique Bi3+ ultraviolet-A, white, and infrared afterglow have been demonstrated by using Bi3+ as a hole trapping and recombination center and using energy transfer processes from Bi3+ to Tb3+, Pr3+, Dy3+, or Cr3+. Proof-of-concept advanced anti-counterfeiting, information encryption, and X-ray imaging will be demonstrated. This work not only develops smart storage phosphors, but more importantly unravels the valence change between Bi2+, Bi3+, or Bi4+ and how it can affect the trapping and release of charge carriers with thermal, optical, or mechanical excitation. This work therefore can promote the discovery and development of Bi3+ based smart materials for various applications.

Tailoring interface and morphology of TiO2 electron transport layer with potassium bitartrate for high-performance perovskite solar cells

The performance of perovskite solar cells (PSCs) has rapidly improved, largely due to advancements in mitigating inherent defects and enhancing interface carrier transport properties. Herein, we provide a facile method to improve the morphology of TiO2 ETLs, suppress defects at interface, and tailor energy level alignment to enhance carrier separation and extraction efficiency by introducing potassium bitartrate (KBT) into the TiO2 electron transport layers (ETLs), achieving high-efficiency and stable PSCs. KBT molecules can enhance the surface smoothness of TiO2 ETLs, resulting in denser and more uniform perovskite films. In addition, the carboxyl groups, hydroxyl groups, and potassium cations containing in KBT improve charge transport efficiency at TiO2/perovskite interface by reducing non-radiative recombination centers in TiO2 and perovskite bottom as well as improving energy level matching. As a result, the target PSC exhibits an obvious improvement in performance with a champion efficiency of 23.35 %, which is greatly improved relative to the control (21.66 %). The long-term operational stability is also remarkably enhanced, after 800 h MPPT, PSCs with KBT remain over 80 % of its initial efficiency. PSCs with KBT-doped ETLs exhibit increased efficiency and stability, highlighting potential of KBT as an interface engineering tool for enhancing PSCs performance.

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior.

This study explores the effects of growth temperature of InGaN/GaN quantum well (QW) layers on indium migration, structural quality, and luminescence properties. It is found that within a specific range, the growth temperature can control the efficiency of In incorporation into QWs and strain energy accumulated in the QW structure, modulating the luminescence efficiency. Temperature-dependent photoluminescence (TDPL) measurements revealed a more pronounced localized state effect in QW samples grown at higher temperatures. Moreover, a too high annealing temperature will enhance indium migration, leading to an increased density of non-radiative recombination centers and a more pronounced quantum-confined Stark effect (QCSE), thereby reducing luminescence intensity. These findings highlight the critical role of thermal management in optimizing the performance of InGaN/GaN MQWs in LEDs and other photoelectronic devices.

Multifunctional Interface Modification Enables Efficient and Stable HTL-Free Carbon-Electroded CsPbI2Br Perovskite Solar Cells.

In recent years, hole transport layer-free all-inorganic CsPbI2Br carbon-electroded perovskite solar cells (C-PSCs) have garnered significant attention due to a trade-off between stability and photovoltaic performance. However, there are inevitably many defects generated at the surfaces or grain boundaries of CsPbI2Br perovskite films, which will serve as carrier non-radiative recombination centers, and CsPbI2Br perovskite films are sensitive to water molecules to degrade, together with energy level mismatch between CsPbI2Br perovskite and carbon electrodes. Herein, 1-benzyl-3-methylimidazolium hexafluorophosphate (1-B-3-MIMPF6), an imidazolium-based ionic liquid simultaneously containing benzene ring and fluorine atoms, was introduced for the modification of the perovskite/carbon interface. The results showed that it could effectively reduce defects, enhance carrier transfer, mitigate carrier non-radiative recombination, facilitate energy alignment, and block moisture intrusion. Therefore, the photovoltaic performance of the modified PSCs with ITO/SnO2/CsPbI2Br/1-B-3-MIMPF6/carbon architecture has been boosted with a champion power conversion efficiency (PCE) of 13.47 %, open circuit voltage of 1.20 V, short circuit current density of 14.69 mA/cm2, and fill factor of 76 %. Moreover, the unencapsulated modified devices exhibited an improved stability and the PCE maintained 78 % of their initial PCE after 24 h storage at room temperature in a 30 %-35 % humidity environment, whereas that of the pristine devices dropped to almost zero.

Bulk and interface engineering with the combined addition of Na+ and E5+ (E = Nb5+, Ta5+) in the design of hematite photoanodes

In this letter, the synergistic effects of multiple element modification through a single polymeric precursor solution in hematite-based photoanodes using Na/Nb and Na/Ta as dopants are evaluated. Linear sweep voltammetry curves showed that the photoelectrochemical response was improved after Na/Nb (or Ta) addition. In both circumstances, an anodic shift (∼200 mV) in the onset potential was noticeable due to surface states created after Nb5+/Ta5+ segregation. The energetic loss caused by Nb (and Ta) segregation was partially restituted by NiFeOx addition due to the passivation of surface states, acting as recombination centers created by pentavalent modifiers. These combined modifications brought a three and four-fold increase for Na0.1HemNb1.5 NiFeOx and Na0.1HemTa1.0NiFeOx respectively. Charge carrier dynamics analysis studied by intensity modulated photocurrent spectroscopy revealed that the PEC enhancement in both systems is mainly associated with improved charge separation efficiency.

UiO-66 uniformly assembled foldable polyimide films with high transmittance and excellent ultraviolet resistance

As a protective layer for the flexible solar cell, a flexible protective material should be of high transmittance, excellent ultraviolet (UV) resistance and mechanical property. Herein, a foldable transparent polyimide (PI) composite film assembled with the zirconium-based metal-organic frameworks (UiO-66-X, X = H, NH2, NO2) is prepared by the direct dispersion or in-situ growth methods. The results show that the transmittances of UiO-66-X@PI films (U@PI, NU@PI and OU@PI) prepared with the in-situ growth are higher than those of UiO-66-X/PI films prepared with the direct dispersion, and the former's mechanical properties are also better than those of the latter. This may be because that the UiO-66-X in the former are embedded into the PI matrix to construct multipoint bonding network. The U@PI exhibits stronger UV-resistance than the Pristine PI, NU@PI and OU@PI after 5000 equivalent sun hours (ESHs) UV irradiation. The attenuations of average transmittance and tensile strength for U@PI are 2.19 % and 18.68 %, respectively, which are only one half and one-third of those for the Pristine PI (4.59 % and 56.58 %), respectively. And the average transmittance of U@PI has been over that of the Pristine PI after 5000 ESHs UV irradiation. This may be because that the porous UiO-66 increases the UV transmission path and the electron-hole recombination center, thereby inhibits the destructive effect of UV.

Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

Internal quantum efficiency (IQE) of AlGaN‐based multiple quantum wells (MQWs) on face‐to‐face‐annealed sputter‐deposited AlN templates is examined by photoluminescence spectroscopy. The excitation power density dependence of IQE is evaluated as a function of temperature under the selective excitation of the quantum wells. The temperature dependences of the maximum IQE and the corresponding excitation power density (EPD) are analyzed based on the rate equation models for carriers and excitons. The decrease of the maximum IQE and increase of the corresponding EPD are mainly due to the increase in the nonradiative recombination rate via nonradiative recombination centers. Furthermore, the nonradiative recombination rate for the MQW with an emission wavelength around 220 nm is activated at a lower temperature than the other samples, which is expected to lead to the lower IQE of the MQW with an emission wavelength around 220 nm.