The quest for modulating the wide bandgap of a pristine h-BN sheet for device-related applications has prompted the present study of ternary 2-dimensional sheets, h-BNC, that contain carbon domains of different shapes and sizes embedded in the h-BN network. The structural stability and electronic properties of hybrid h-BNC sheets containing rectangular-, circular-, hexagonal-, and triangular-shaped carbon domains are investigated using a real-space electronic structure method, where an environment-dependent semi-empirical Hamiltonian is used within a framework of a linear combination of atomic orbitals and self-consistent charge calculations. This method allows a study of larger carbon domains embedded in the h-BN matrix beyond what is possible via first-principles calculations, and thus serves to complement previous theoretical studies on hybrid h-BNC systems. The electronic density of states reveals mid-gap states for all h-BNC sheets, suggesting a narrowing of the energy gap compared to the pristine h-BN sheet. They arise from the breaking of the hexagonal symmetry due to bond distortions at the interface between the carbon domain and the h-BN network. The features of such mid-gap states strongly depend on the size and shape of carbon domains and the type of bonding (C-N, C-B, or a mixture of both) at the interface. The hybrid h-BNC sheet containing rectangular carbon domains switches from a semiconductor to a gapless semi-metal-like, and to a metal-like system as the size of the carbon domain increases. The energy gap of the h-BNC sheet containing hexagonal carbon domains exhibits a power-law decrease with the size of the carbon domains. On the other hand, the energy gap of the hybrid h-BN sheet containing circular carbon domains oscillates as the size of the carbon domain is increased. For electron-rich hybrid h-BNC sheets containing triangular graphene domains and C-N interfaces, a p-type-like behaviour is obtained. On the other hand, for electron-deficient hybrid h-BNC sheets, containing triangular graphene domains and C-B interfaces, the electronic behaviour switches from a p-type-like semiconductor to a metal-like behaviour as the number of carbon atoms increase. The top of the valence band was found to be half-filled for all triangular domains. The results obtained here may pave the way for novel device concepts based on h-BNC sheets.