Spin Readout Research Articles

Strong coupling between a single nitrogen-vacancy spin and the rotational mode of diamonds levitating in an ion trap

A scheme for strong coupling between a single atomic spin and the rotational mode of levitating nanoparticles is proposed. The idea is based on spin readout of nitrogen-vacancy centers embedded in aspherical nanodiamonds levitating in an ion trap. We show that the asymmetry of the diamond induces a rotational confinement in the ion trap. Using a weak homogeneous magnetic field and a strong microwave driving we then demonstrate that the spin of the nitrogen-vacancy center can be strongly coupled to the rotational mode of the diamond.

Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.

Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in germanium hut wires. By tuning the growth density of the latter we can realize a T-like structure between two neighboring wires. Such a structure allows the realization of a charge sensor, which is electrostatically and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3 e. By integrating the T-like structure into a radiofrequency reflectometry setup, single-shot measurements allowing the extraction of hole tunneling times are performed. The extracted tunneling times of less than 10 μs are attributed to the small effective mass of Ge heavy-hole states and pave the way toward projective spin readout measurements.

Electron spin contrast of Purcell-enhanced nitrogen-vacancy ensembles in nanodiamonds

Nitrogen-vacancy centers in diamond allow for coherent spin state manipulation at room temperature, which could bring dramatic advances to nanoscale sensing and quantum information technology. We introduce a novel method for the optical measurement of the spin contrast in dense nitrogen-vacancy (NV) ensembles. This method brings a new insight into the interplay between the spin contrast and fluorescence lifetime. We show that for improving the spin readout sensitivity in NV ensembles, one should aim at modifying the far field radiation pattern rather than enhancing the emission rate.

Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are coupled to interfacial defect spins near the Si/SiO$_2$ interface. To prevent ionization of the donors, the experiments are performed at cryogenic temperatures and the mobile charge carriers needed are generated via optical excitation. The influence of this optical excitation on the SDR process and the resulting EDMR signal is still not well understood. Here, we use EDMR to characterize changes to both phosphorus and defect spin readout as a function of optical excitation using: a 980 nm laser with energy just above the silicon band edge at cryogenic temperatures; a 405 nm laser to generate hot surface-carriers; and a broadband white light source. EDMR signals are observed from the phosphorus donor and two distinct defect species in all the experiments. With near-infrared excitation, we find that the EDMR signal primarily arises from donor-defect pairs, while at higher photon energies there are significant additional contributions from defect-defect pairs. The optical penetration depth into silicon is also known to be strongly wavelength dependent at cryogenic temperatures. The energy of the optical excitation is observed to strongly modulate the kinetics of the SDR process. Careful tuning of the optical photon energy could therefore be used to control both the subset of spin pairs contributing to the EDMR signal as well as the dynamics of the SDR process.

Demonstration of diamond microlens structures by a three-dimensional (3D) dual-mask method.

Diamond is a promising platform for quantum information technologies (QITs) mainly due to the properties of color centers including spin read-out, magnetic field sensing, and entanglement between different nitrogen-vacancy (NV) centers. High photon collection efficiency is essential for a high fidelity optical single-shot readout of electronic spin in the color center. To avoid total internal reflection, sculpting solid immersion lenses in the diamond surface is an ideal natural choice. Three-dimensional (3D) microstructures can be made in a photoresist material by a special lithography method. These structures can be subsequently transferred into silicon, diamond or other semiconductors by plasma etching with appropriate selectivity. However, this method cannot be directly implemented into making large height diamond microlenses where the selectivity between diamond and the photoresist is very low. In this work, we propose and demonstrate a dual mask method to achieve an overall high selectivity between diamond and photoresist via the interlayer of single crystalline silicon. By tuning the process parameters of the two etching steps, diamond micro-lenses with large variable height are successfully demonstrated..

Spin separation and exchange for quantum dots in the Overhauser field

We describe the spin and charge dynamics of the system of two electrons confined within a double quantum dot defined in a quantum wire. The spin dynamics is driven by the electron motion in presence of the spin-orbit interaction and the randomly varying local Overhauser field due to the nuclear spins. The Schroedinger equation is solved with the time-dependent configuration interaction method that allows for an exact description of the system dynamics. The procedures of the spin separation, exchange and read-out by the spin to charge conversion all induced by the detuning variation are simulated. The rates of the potential variation that are necessary for the spin separation and spin to charge conversion in the context of the Landau-Zener transitions are determined. The average over random configurations of the hyperfine field produce spin exchange results which qualitatively agree with the experimental data.

Electrical Read-Out of a Single Spin Using an Exchange-Coupled Quantum Dot.

We present an original way of continuously reading-out the state of a single electronic spin. Our detection scheme is based on an exchange interaction between the electronic spin and a nearby read-out quantum dot. The coupling between the two systems results in a spin-dependent conductance through the read-out dot and establishes an all electrical and nondestructive single spin detection. With conductance variations up to 4% and read-out fidelities greater than 99.5%, this method represents an alternative to systems for which spin-to-charge conversion cannot be implemented. Using a semiclassical approach, we present an asymmetric exchange coupling model in good agreement with our experimental results.

Single-Shot Readout of a Nuclear Spin Weakly Coupled to a Nitrogen-Vacancy Center at Room Temperature.

Single-shot readout of qubits is required for scalable quantum computing. Nuclear spins are superb quantum memories due to their long coherence time, but are difficult to be read out in a single shot due to their weak interaction with probes. Here we demonstrate single-shot readout of a weakly coupled ^{13}C nuclear spin at room temperature, which is unresolvable in traditional protocols. States of the weakly coupled nuclear spin are trapped and read out projectively by sequential weak measurements, which are implemented by dynamical decoupling pulses. A nuclear spin coupled to the nitrogen-vacancy (NV) center with strength 330kHz is read out in 200ms with a fidelity of 95.5%. This work provides a general protocol for single-shot readout of weakly coupled qubits at room temperature and therefore largely extends the range of physical systems for scalable quantum computing.

Optical holonomic single quantum gates with a geometric spin under a zero field

Realization of fast fault-tolerant quantum gates on a single spin is the core requirement for solid-state quantum-information processing. As polarized light shows geometric interference, spin coherence is also geometrically controlled with light via the spin-orbit interaction. Here, we show that a geometric spin in a degenerate subspace of a spin-1 electronic system under a zero field in a nitrogen vacancy center in diamond allows implementation of optical non-adiabatic holonomic quantum gates. The geometric spin under quasi-resonant light exposure undergoes a cyclic evolution in the spin-orbit space, and acquires a geometric phase or holonomy that results in rotations about an arbitrary axis by any angle defined by the light polarization and detuning. This enables universal holonomic quantum gates with a single operation. We demonstrate a complete set of Pauli quantum gates using the geometric spin preparation and readout techniques. The new scheme opens a path to holonomic quantum computers and repeaters.

Path-dependent initialization of a single quantum dot exciton spin in a nanophotonic waveguide

We demonstrate a scheme for in-plane initialization and readout of a single exciton spin in an InGaAs quantum dot (QD) coupled to a GaAs nanobeam waveguide. The chiral coupling of the QD and the optical mode of the nanobeam enables spin initialization and readout fidelity approaching unity in magnetic field $B=1$ T and $\sim$0.9 without the field. We further show that this in-plane excitation scheme is independent of the incident excitation laser polarization and depends solely on the excitation direction. This scheme provides a robust in-plane spin excitation basis for a photon-mediated spin network for quantum information applications.

Near-infrared-assisted charge control and spin readout of the nitrogen-vacancy center in diamond

We utilize nonlinear absorption to design all-optical protocols that improve both charge-state initialization and spin readout for the nitrogen-vacancy (NV) center in diamond. Nonmonotonic variations in the equilibrium charge state as a function of visible and near-infrared optical power are attributed to competing multiphoton absorption processes. In certain regimes, multicolor illumination enhances the steady-state population of the NV's negative charge state above 90%. At higher NIR intensities, selective ionization of the singlet manifold facilitates a protocol for spin-to-charge conversion that dramatically enhances the spin readout fidelity. We demonstrate a sixfold increase in the signal-to-noise ratio for single-shot spin measurements and demonstrate a pathway towards single-shot electron spin readout at room temperature.

Purcell-Enhanced Single-Photon Emission from Nitrogen-Vacancy Centers Coupled to a Tunable Microcavity

Optical microcavities are a powerful tool to enhance spontaneous emission of individual quantum emitters. However, the broad emission spectra encountered in the solid state at room temperature limit the influence of a cavity, and call for ultra-small mode volume. We demonstrate Purcell-enhanced single photon emission from nitrogen-vacancy (NV) centers in nanodiamonds coupled to a tunable fiber-based microcavity with a mode volume down to $1.0\,\lambda^{3}$. We record cavity-enhanced fluorescence images and study several single emitters with one cavity. The Purcell effect is evidenced by enhanced fluorescence collection, as well as tunable fluorescence lifetime modification, and we infer an effective Purcell factor of up to 2.0. With numerical simulations, we furthermore show that a novel regime for light confinement can be achieved, where a Fabry-Perot mode is combined with additional mode confinement by the nanocrystal itself. In this regime, effective Purcell factors of up to 11 for NV centers and 63 for silicon vacancy centers are feasible, holding promise for bright single photon sources and efficient spin readout under ambient conditions.

Coherent spin-exchange via a quantum mediator.

Coherent interactions at a distance provide a powerful tool for quantum simulation and computation. The most common approach to realize an effective long-distance coupling 'on-chip' is to use a quantum mediator, as has been demonstrated for superconducting qubits and trapped ions. For quantum dot arrays, which combine a high degree of tunability with extremely long coherence times, the experimental demonstration of the time evolution of coherent spin-spin coupling via an intermediary system remains an important outstanding goal. Here, we use a linear triple-quantum-dot array to demonstrate a coherent time evolution of two interacting distant spins via a quantum mediator. The two outer dots are occupied with a single electron spin each, and the spins experience a superexchange interaction through the empty middle dot, which acts as mediator. Using single-shot spin readout, we measure the coherent time evolution of the spin states on the outer dots and observe a characteristic dependence of the exchange frequency as a function of the detuning between the middle and outer dots. This approach may provide a new route for scaling up spin qubit circuits using quantum dots, and aid in the simulation of materials and molecules with non-nearest-neighbour couplings such as MnO (ref.27), high-temperature superconductors and DNA. The same superexchange concept can also be applied in cold atom experiments.

Ultrasensitive mechanical detection of magnetic moment using a commercial disk drive write head

Sensitive detection of weak magnetic moments is an essential capability in many areas of nanoscale science and technology, including nanomagnetism, quantum readout of spins and nanoscale magnetic resonance imaging. Here we show that the write head of a commercial hard drive may enable significant advances in nanoscale spin detection. By approaching a sharp diamond tip to within 5 nm from a write pole and measuring the induced diamagnetic moment with a nanomechanical force transducer, we demonstrate a spin sensitivity of 0.032 μB Hz−1/2, equivalent to 21 proton magnetic moments. The high sensitivity is enabled in part by the pole's strong magnetic gradient of up to 28 × 106 T m−1 and in part by the absence of non-contact friction due to the extremely flat writer surface. In addition, we demonstrate quantitative imaging of the pole field with ∼10 nm spatial resolution. We foresee diverse applications for write heads in experimental condensed matter physics, especially in spintronics, ultrafast spin manipulation and mesoscopic physics.

Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures

We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ∼9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ∼2.7×103, the power dissipation of the amplifier is 13 μW, the bandwidth is ∼1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤70 fA/Hz. With this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.

Single-spin CCD.

Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which point quantum information processing also becomes a possibility. Here, we demonstrate the manipulation, transport and readout of individual electron spins in a linear array of three semiconductor quantum dots. First, we demonstrate single-shot readout of three spins with fidelities of 97% on average, using an approach analogous to the operation of a charge-coupled device (CCD). Next, we perform site-selective control of the three spins, thereby writing the content of each pixel of this 'single-spin charge-coupled device'. Finally, we show that shuttling an electron back and forth in the array hundreds of times, covering a cumulative distance of 80 μm, has negligible influence on its spin projection. Extrapolating these results to the case of much larger arrays points at a diverse range of potential applications, from quantum information to imaging and sensing.

Purcell-enhanced optical spin readout of nitrogen-vacancy centers in diamond

Nitrogen-vacancy (NV) color centers in diamond have emerged as promising quantum solid-state systems, with applications ranging from quantum information processing to magnetic sensing. One of the most useful properties of NVs is the ability to read their ground-state spin projection optically at room temperature. Using theoretical analysis of Purcell-enhanced NV optical coupling, we identify parameters for a significantly enhanced single-to-noise ratio (SNR) of the optical spin-state readout. We then demonstrate that a combined increase in spontaneous emission (through Purcell enhancement) and in optical excitation could significantly increase the readout SNR. Our combined analytical and numerical analysis, which is relevant for various optically active solid-state systems, differentiates between state-mixing processes and provides insights into the optimal light-matter coupling design.

Optimized quantum sensing with a single electron spin using real-time adaptive measurements.

Quantum sensors based on single solid-state spins promise a unique combination of sensitivity and spatial resolution. The key challenge in sensing is to achieve minimum estimation uncertainty within a given time and with high dynamic range. Adaptive strategies have been proposed to achieve optimal performance, but their implementation in solid-state systems has been hindered by the demanding experimental requirements. Here, we realize adaptive d.c. sensing by combining single-shot readout of an electron spin in diamond with fast feedback. By adapting the spin readout basis in real time based on previous outcomes, we demonstrate a sensitivity in Ramsey interferometry surpassing the standard measurement limit. Furthermore, we find by simulations and experiments that adaptive protocols offer a distinctive advantage over the best known non-adaptive protocols when overhead and limited estimation time are taken into account. Using an optimized adaptive protocol we achieve a magnetic field sensitivity of 6.1 ± 1.7 nT Hz(-1/2) over a wide range of 1.78 mT. These results open up a new class of experiments for solid-state sensors in which real-time knowledge of the measurement history is exploited to obtain optimal performance.

Radio frequency measurements of tunnel couplings and singlet–triplet spin states in Si:P quantum dots

Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet–triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μeV to 8 meV. We measure dot–lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon.

High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge State.

We demonstrate high-fidelity electron spin read-out of a precision placed single donor in silicon via spin selective tunneling to either the D(+) or D(-) charge state of the donor. By performing read-out at the stable two electron D(0)↔D(-) charge transition we can increase the tunnel rates to a nearby single electron transistor charge sensor by nearly 2 orders of magnitude, allowing faster qubit read-out (1 ms) with minimum loss in read-out fidelity (98.4%) compared to read-out at the D(+)↔D(0) transition (99.6%). Furthermore, we show that read-out via the D(-) charge state can be used to rapidly initialize the electron spin qubit in its ground state with a fidelity of F(I)=99.8%.