Ratio Of Photocurrent Research Articles

Nonequilibrium quantum transport properties of tetragonal zinc chalcogenide monolayers

Tetragonal zinc chalcogenide monolayers (TZCM) are emerging as interesting electronic materials with a direct band gap and relatively high carrier mobility. In this work, we report a theoretical investigation of electronic transport properties and photoelectric response properties of TZCM with gold contacts by density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. When there is no gate voltage applied, the current increases nonlinearly as bias voltage increases. Among the four proposed devices, the Au(100)/ZnS/Au(100) device has the best electronic transport performance and is most sensitive to the adjustment of bias voltage and gate voltage. The photocurrent calculation results indicate that the low-frequency oscillatory photocurrent of the Au(100)/ZnSe/Au(100) device in the high photon energy region may have potential applications in ultraviolet light-emitting diodes. The Au(100)/Zn2SeS/Au(100) device has more stable photoelectric response and polarization sensitivity than the Au(100)/Zn2SSe/Au(100) device. The Au(100)/TZCM/Au(100) devices exhibit considerable photocurrent and good extinction ratios. This work could pave the way for the future application of TZCM in the field of optoelectronics and so on.

Sensitive and Broadband Wavelength Sensor Based on Two Graphene/Si/Graphene Heterojunctions

AbstractHigh‐precision spectral detection and broadband wavelength sensors have attracted considerable interest for important application in color image sensing. Due to the absorption limitations of silicon, conventional complementary metal–oxide–semiconductors have a relatively limited wavelength region from the ultraviolet to near‐infrared spectrum. Here, a simple‐structured device is developed by assembling two back‐to‐back monolayer graphene (MLG)/Si/MLG heterojunctions for high‐resolution wavelength sensing applications. The single MLG/Si/MLG photodetector exhibits a responsivity of 0.18 A W−1, a specific detectivity of 1.36 × 109 Jones, and an external quantum efficiency of 28.5%. Thanks to the unique device geometry, the distribution of photo‐generation rates in the two photodetectors is completely different, which brings about different photoelectric properties. It is found that the relationship between the photocurrent ratio of both photodetectors and the light wavelength can be fitted by a monotonic function, according to which the wavelength of incident light in the range from 260 to 1050 nm can be accurately estimated. A high resolution of 1 nm is demonstrated across a broadband wavelength from 260 to 1000 nm. This good resolution, along with good repeatability and stability, endow the present device with potential promise in future spectral sensing applications.

Modulating the Function of GeAs/ReS2 van der Waals Heterojunction with its Potential Application for Short-Wave Infrared and Polarization-Sensitive Photodetection.

Van der Waals heterojunction (vdWs) of 2D materials with integrated or extended superior characteristics, opening up new opportunities in functional electronic and optoelectric device applications. Exploring methods to achieve multifunctional vdWs heterojunction devices is one of the most promising prospects in this area. Herein, a diverse function of forward rectifying diode, Zener tunneling diode, and backward rectifying diodes are realized in GeAs/ReS2 heterojunction by modulating the doping level of GeAs. The tunneling diode presents an interesting trend forward negative differential resistance (NDR) behavior which may facilitate the application of multi-value logic. More importantly, the GeAs/ReS2 forward rectifying diode exhibits highly sensitive photodetection in the wide-spectrum range up to 1550nm corresponding to a short-wave infrared (SWIR) region. In addition, as two strong anisotropic 2D materials of GeAs and ReS2 , the heterojunction exhibits strong polarization-sensitive photodetection behavior with a dichroic photocurrent ratio of 1.7. This work provides an effective strategy to achieve multifunctional 2D vdW heterojunction devices and develops more possibilities to broaden their functionalities and applications.

Optical and photoelectrical properties of low-concentration-Mn-doped CsPbBr3 nanocrystals

Doping of cesium lead bromide (CsPbBr3) perovskite nanocrystals offers effective control of their optical and optoelectrical properties, leading to possibilities of several new applications. Herein, cesium lead bromide perovskite nanocrystals are synthesized with doping of a low concentration of manganese (Mn) into the perovskite lattice using manganese (II) chloride (MnCl2) as a precursor. The shift in X-ray diffraction peaks toward higher angles indicates that manganese as a dopant is present inside the cesium lead bromide lattice. A change in the manganese (II) chloride precursor concentration from 5 to 10 mmol results in an increment in the atomic percentage of manganese from 0.3 to 0.5% in the cesium lead bromide crystal. Doping of a low concentration of manganese (0.3 at.%) into cesium lead bromide results in enhancement of green emission, while doping with a higher concentration of manganese (0.5 at.%) results in blue emission. The band gap of cesium lead bromide nanocrystals increases from 2.31 to 2.53 eV with an increase in the concentration of manganese. The dark and photoelectrical conductivity of cesium lead bromide nanocrystals is improved in the case of doping with a low concentration (0.3 at.%) of manganese. The ratio of photocurrent against dark current is found to be ∼182 in manganese-doped cesium lead bromide crystal film as compared with ∼101 for undoped cesium lead bromide crystal film. Doping with a low concentration of manganese improves the overall electrical and photoelectrical conductivity of cesium lead bromide perovskite nanocrystals.

Anti-ambipolar and polarization-resolved behavior in MoTe2 channel sensitized with low-symmetric CrOCl

Atomically thin two-dimensional (2D) materials make it possible to create a variety of van der Waals (vdW) heterostructures with different physical features and attributes, which enables the growth of innovative electronics and optoelectronics applications. The band alignment and charge transfer play a crucial role in the physical and optoelectrical properties of the vdW heterostructure. Here, we design a vdW heterojunction device comprising low-symmetric CrOCl to induce a stable anti-ambipolar behavior and polarization-sensitive photodetection performance. 2D CrOCl exhibits strong in-plane anisotropy and linear dichroism, and an anti-ambipolar transport behavior is observed in a MoTe2 channel due to the gate-tunable band bending and charge transfer at MoTe2/CrOCl interface. The devices also exhibit well photodetection performance with a responsivity of 1.05 A/W and a temporal response of 970 μs. Owing to the anisotropic CrOCl serving as a photosensitizing layer, the device achieves the capability of polarization-sensitive photodetection with a photocurrent dichroic ratio up to ∼6. This work offers a valid device model and design strategy to realize the versatile optoelectronics, including the anti-ambipolar transistor and polarimetric photodetectors.

Deciphering Adverse Detrapped Hole Transfer in Hot-Electron Photoelectric Conversion at Infrared Wavelengths.

Hot-carrier devices are promising alternatives for enabling path breaking photoelectric conversion. However, existing hot-carrier devices suffer from low efficiencies, particularly in the infrared region, and ambiguous physical mechanisms. Inthiswork,the competitive interfacial transfer mechanisms of detrapped holes and hot electrons in hot-carrier devices are discovered. Through photocurrent polarity research and optical-pump-THz-probe (OPTP) spectroscopy, it is verified that detrapped hole transfer (DHT) and hot-electron transfer (HET) dominate the low- and high-density excitation responses, respectively. The photocurrent ratio assigned to DHT and HET increases from 6.6% to over 1133.3% as the illumination intensity decreases. DHT induces severe degeneration of the external quantum efficiency (EQE), especially at low illumination intensities. The EQE of a hot-electron device can theoretically increase by over two orders of magnitude at 10mWcm-2 through DHT elimination. The OPTP results show that competitive transfer arises from the carrier oscillation type and carrier-density-related Coulomb screening. The screening intensity determines the excitation weight and hot-electron cooling scenes and thereby the transfer dynamics.

Unipolar barriers in near-broken-gap heterostructures for high-performance self-powered photodetectors

The two-dimensional heterostructure is a promising research direction in photodetection. However, developing a good photodetector with high responsivity and fast speed is still challenging. Herein, we fabricate a high-performance self-powered broadband (355–1064 nm) photodetector based on a near-broken-gap GeSe/SnS2/InSe heterostructure, where SnS2 is used as a potential hole barrier layer. The device shows an ultrahigh open-circuit voltage (VOC) of 0.57 V, a high power-dependent responsivity of 1.87 A W−1 at 355 nm, and a fast response time of 8 μs in the self-powered mode. Based on the near-broken band alignment, the InSe layer with high electron mobility can efficiently collect the photogenerated electrons from the GeSe layer to improve conversion efficiency. Furthermore, the unipolar hole barrier at the interface can inhibit the Langevin recombination resulting in VOC enhancement. Notably, the anisotropy ratio of photocurrent in our device is also enhanced to ∼3.5, which is higher than GeSe photodetectors and other anisotropic devices counterparts. This work provides an opportunity for the realization of the high-sensitivity polarization-sensitive broadband photodetector.

A General Vapor‐Induced Coating Approach for Layer‐controlled Organic Single Crystals

Abstract2D organic semiconductor crystals (2D OSCs) are vital for high‐performance electronic and optoelectronic devices owing to their unique material merits. However, it is still challenging to fabricate high‐quality and large‐scale ultrathin 2D OSCs with controllable molecular layers due to the disordered molecular deposition and uncontrollable mass transport in solution‐processing fabrication. Here, a vapor‐induced meniscus modulating strategy for preparing unidirectional and stable Marangoni flow to guide contactless meniscus evolution is reported, which ensures uniform mass transport and ordered molecular deposition to achieve high‐quality ultrathin 2D OSCs. Both the surface tension difference and the substrate wettability are critical to meniscus formation, which results in various meniscus deformation states and film morphologies. Based on the optimized vapor‐solvent system, ultrathin 2D OSCs of C8‐BTBT with precise layer definition are prepared controllably. The discrepancies in liquid film height and solute concentration are decisive in controlling the molecular scale thickness ranging from mono to a few layers. Moreover, the layer‐dependent electronic and optoelectronic properties of the ultrathin films are systematically investigated. Notably, high‐performance polarization‐sensitive solar‐blind photodetectors are achieved with a dichroic ratio of photocurrent up to 2.26, and the corresponding polarimetric image sensor exhibits superior solar‐blind polarization imaging capability thanks to the high crystalline quality.

Precisely Tailoring a FAPbI3-Derived Ferroelectric for Sensitive Self-Driven Broad-Spectrum Polarized Photodetection.

Benefiting from superior semiconducting properties and the angle-dependence of the bulk photovoltaic effect (BPVE) on polarized light, the two-dimensional (2D) hybrid perovskite ferroelectrics are developed for sensitive self-powered polarized photodetection. Most of the currently reported ferroelectric-driven polarized photodetection is restricted to the shortwave optical response, and expanding the response range is urgently needed. Here we report the first instance of a FAPbI3-derived (2D) perovskite ferroelectric, (BA)2(FA)Pb2I7 (1, BA is n-butylammonium, FA is formamidinium). It exhibited a notably high thermostability and broad-spectrum adsorption extending to around 650 nm. Significantly, 1 demonstrated ferroelectricity-driven self-powered polarized photodetection under 637 nm with an anisotropic photocurrent ratio of ∼1.96, ultrahigh detectivity of 3.34 × 1012 Jones, and long-term repetition. This research will shed light on the development of new ferroelectrics for potential application in broad-spectrum polarization-based optoelectronics.

Strong Anisotropic Two-Dimensional In2Se3 for Light Intensity and Polarization Dual-Mode High-Performance Detection

Detecting the light from different freedom is of great significance to gain more information. Two-dimensional (2D) materials with low intrinsic carrier concentration and highly tunable electronic structure have been considered as the promising candidate for future room-temperature multi-functional photodetectors. However, current investigations mainly focus on intensity-sensitive detection; the multi-dimensional photodetection such as polarization-sensitive photodetection is still in its early stage. Herein, the intensity- and polarization-sensitive photodetection based on α-In2Se3 is studied. By using angle-resolved polarized Raman spectroscopy, it is demonstrated that α-In2Se3 shows an anisotropic phonon vibration property indicating its asymmetric structure. The α-In2Se3-based photodetector has a photoelectric performance with a responsivity of 1936 A/W and a specific detectivity of 2.1 × 1013 Jones under 0.2 mW/cm2 power density at 400 nm. Moreover, by studying the polarized angle-resolved photoelectrical effect, it is found that the ratio of maximum and minimum photocurrent (dichroic ratio) reaches 1.47 at 650 nm suggesting good polarization-sensitive detection. After post-annealing, α-In2Se3 in situ converts to β-In2Se3 which has similar in-plane anisotropic crystallinity and exhibits a dichroic ratio of 1.41. It is found that the responsivity of β-In2Se3 is 6 A/W, much lower than that of α-In2Se3. The high-performance light intensity- and polarization-detection of α-In2Se3 enlarges the 2D anisotropic materials family and provides new opportunities for future dual-mode photodetection.

A Simple-Structured Perovskite Wavelength Sensor for Full-Color Imaging Application

In this study, simple-structured wavelength sensors were developed by depositing two back-to-back Au/MAPbI3/Au photodetectors on an MAPbI3 single crystal. This sensor could quantitatively distinguish wavelengths. Further device analysis showed that both photodetectors possess entirely disparate optoelectronic properties. Consequently, the as-developed wavelength sensor could accurately distinguish incident-light wavelengths ranging from 265 to 860 nm with a resolution of less than 1.5 nm based on the relation between the photocurrent ratios of both photodetectors and the incident light wavelengths. Notably, a high resolution and wide detection range are among the optimum reported values for such sensors and enable full-color imaging. Furthermore, technology computer-aided design (TCAD) simulations showed that a mechanism involved in distinguishing wavelengths is attributed to the wavelength-dependent photon generation rate in MAPbI3 single crystals. The high-performance MAPbI3 wavelength sensor can potentially drive the research progress of perovskites in wavelength recognition and full-color imaging.

Reconfigurable and Broadband Polarimetric Photodetector

AbstractThe sensitive detection of light polarization besides the intensity and wavelength, can provide a new degree of freedom for more and clearer information of imaging targets in night, fog, and smoke environment. However, the conventional filter‐integrated polarimetric photodetectors suffer from the complicated fabrication process and limited spectral range. Herein, broadband and polarization‐sensitive photodetectors are achieved with reconfigurable operation mode, utilizing the linear dichroism and narrow band gap of 2D As0.4P0.6 with in‐plane anisotropic structure. In As0.4P0.6‐MoTe2 heterojunction device, both photo‐gating and photovoltaic modes are operated and switchable, contributing to high responsivity (1590 A W−1 at 405 nm and 14.7 A W−1 at 1550 nm) and ultrafast speed (25 µs) in the wide spectral band (405–1550 nm). Interestingly, an optical reversal is observed on both linear dichroism and polarimetric photocurrent due to the wavelength‐dependent polarization reverse nature of the As0.4P0.6 flakes. The dichroism ratio of photocurrent can be modulated from unity to ≈10 by varying the gate voltage, enabling the reconfigurable detection mode from polarization‐independence to polarization‐susceptibility. This study demonstrates a new prototype device comprising low symmetric van der Waals heterostructure, possessing the gate‐tunability on both photo‐gain and dichroism ratio, toward high performance, reconfigurable, broadband, and polarization‐resolved photodetection and imaging applications.

High-performance photodetectors based on Au nanoislands decorated CdSSe nanobelt

Ternary alloy CdS<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub> has the physical properties of CdS and CdSe, and its band gap can be adjusted by changing the component ratio of the elements. The alloy has excellent photoelectric properties and has potential application in optoelectronic devices. Although one has made some research progress of the CdSSe-based photodetectors, their performances are still far from the commercial requirements, so how to improve the performance of the device is the focus of current research. In this work, a single crystal CdS<sub>0.42</sub>Se<sub>0.58</sub> nanobelt device is first prepared by thermal evaporation. Under 550 nm illumination and 1 V bias, the ratio of photocurrent to dark current of the device is 1.24×10<sup>3</sup>, the responsivity arrives at 60.1 A/W, and the external quantum efficiency reaches 1.36×10<sup>4</sup>%, and the detectivity is 2.16×10<sup>11</sup> Jones. Its rise time and fall time are about 41.1/41.5 ms, respectively. Secondly, after the CdSSe nanobelt is decorated by Au nanoislands, the optoelectronic performance of the device is significantly improved. Under 550 nm illumination and 1 V bias, the <i>I</i><sub>p</sub>/<i>I</i><sub>d</sub> ratio, responsivity, external quantum efficiency and detectivity of the device are increased by 5.4, 11.8, 11.8 and 10.6 times, respectively, and the rise time and fall time are both reduced to half of counterparts of single CdSSe nanobelt. Finally, the microscopic physical mechanism of the enhanced optoelectronic performance of the device is explained based on localized surface plasmon resonance of Au nanoislands. After the combination of gold nanoislands and CdSSe nanobelt, the difference in Fermi level between them results in the transfer of electrons from CdSSe nanobelt to Au nanoislands, thus forming an internal electric field at the interface, which is directed from CdSSe nanobelt to Au nanoislands. Under illumination, the electrons in the Au nanoislands acquire enough energy to jump over the Schottky barrier because of localized surface plasmon resonance. These photoexcited hot electrons are trapped and stored in extra energy levels above the conduction band minimum, and then are cooled down to the band edge, thus realizing the transfer of electrons from Au nanoislands to CdSSe nanobelt. Moreover, the internal electric field also greatly promotes the transfer of hot electrons from Au nanoislands to CdSSe nanobelt, and inhibits the recombination of carriers at the interface, resulting in large photocurrent. Our work provides an effective strategy for fabricating high-performance photodetectors without increasing the device area.

Stable borosilicate glass doped with CsPbBr3 quantum dots for efficient photodetectors

Cesium halide lead perovskite quantum dots (QDs) have attracted great attention in the field of optoelectronics due to their excellent photoelectric characteristics. Unfortunately, the susceptibility to anion exchange, instability in air and poor water resistance of perovskite QDs hinder their practical applications. In this study, borosilicate glass doped with CsPbBr3 QDs were prepared by traditional melt quenching and heat treatment procedures, which dramatically enhances the stability of perovskite QDs. The microstructures and luminescence properties of glass ceramics were carefully investigated. Intense green emissions were observed in the QDs doped glass under the excitation of ultraviolet light. More importantly, the photodetectors based on the CsPbBr3 QDs doped glass possess a high on/off photocurrent ratio of 104. The dynamic linear response range is large and the response speed is fast under low bias working condition. The results suggest that CsPbBr3 QDs doped glasses with high emission yield could find potential applications in highly efficiency photodetectors.

Low symmetric sub-wavelength array enhanced lensless polarization-sensitivity photodetector of germanium selenium

Polarization-sensitive photodetectors, with the ability of identifying the texture-, stress-, and roughness-induced light polarization state variation, displace unique advantages in the fields of national security, medical diagnosis, and aerospace. The utilization of in-plane anisotropic two-dimensional (2D) materials has led the polarization photodetector into a polarizer-free regime, and facilitated the miniaturization of optoelectronic device integration. However, the insufficient polarization ratio (usually less than 10) restricts the detection resolution of polarized signals. Here, we designed a sub-wavelength array (SWA) structure of 2D germanium selenium (GeSe) to further improve its anisotropic sensitivity, which boosts the polarized photocurrent ratio from 1.6 to 18. This enhancement comes from the combination of nano-scale arrays with atomic-scale lattice arrangement at the low-symmetric direction, while the polarization-sensitive photoresponse along the high-symmetric direction is strongly suppressed due to the SWA-caused depolarization effect. Our mechanism study revealed that the SWA can improve the asymmetry of charge distribution, attenuate the matrix element in zigzag direction, and the localized surface plasma, which elevates the photo absorption and photoelectric transition probability along the armchair direction, therefore accounts for the enhanced polarization sensitivity. In addition, the photodetector based on GeSe SWA exhibited a broad power range of 40 dB at a near-infrared wavelength of 808 nm and the ability of weak-light detection under 0.1 LUX of white light (two orders of magnitude smaller than pristine 2D GeSe). This work provides a feasible guideline to improve the polarization sensitivity of 2D materials, and will greatly benefit the development of polarized imaging sensors.

Boosting Phototransistor Performance in Monolayer TMDs via Multiple Reflections from DBR.

Transition-metal dichalcogenides (TMDs) are intensively studied for high-performance phototransistors. However, the device performance is limited by the single photoexcitation. Here, we show a unique strategy in which phototransistor performance can be boosted by fabricating the device on top of a distributed Bragg reflector (DBR). Monolayer molybdenum disulfide (MoS2) and tungsten disulfide (WS2) phototransistors were fabricated on DBR and SiO2 substrates for comparison. Furthermore, phototransistor performances including photocurrent, responsivity, photoinduced mobility, and subthreshold swing highlight 582 times enhancement in photoresponsivity ratio and 350 times enhancement in photocurrent ratio in the DBR sample using transparent graphene electrode and hBN encapsulation.

Intrinsic polarization-sensitive organic photodetector with self-assembled all-polymer heterojunction

Intrinsic polarization-sensitive photodetectors (IPPDs) have attracted considerable attention in recent years due to their simplicity in configuration, making them ideal candidates for compact and integrated polarization-sensitive sensing and imaging systems. Photoactive films with intrinsic optical anisotropy are necessary for IPPDs. This study reports an achievement of photoactive films based on all-polymer heterojunction films with in-plane optical anisotropy using a simple bottom-up self-assembly method. Both the donor (TQ1) and acceptor (N2200) polymers have the same spatial orientation with distinct anisotropy, approaching a dichroic ratio (DR) of 8. Polarization-sensitive light absorption is due to the uniaxially oriented polymer chains, which are dominated by lamellar packing with edge-on orientation. For IPPDs based on this anisotropic all-polymer heterojunction film, a photocurrent anisotropy was found with a polarized photocurrent ratio of 2.6. The detectivity of these IPPDs was found to be 1.9 × 1011 Jones (@ ∼600 nm, 0 V bias). Our work shows that oriented polymer donor–acceptor films fabricated using bottom-up self-assembly have great potential in applications, such as polarization detection.

Osmotic-Enhanced-Photoelectrochemical Hydrogen Production Based on Nanofluidics

Osmotic-Enhanced-Photoelectrochemical Hydrogen Production Based on Nanofluidics

Light addressable potentiometric sensor with well-ordered pyramidal pits-patterned silicon

Light addressable potentiometric sensor (LAPS) with the structure of electrolyte-insulator-semiconductor is a kind of field effect sensor that detects local potential changes caused by protonation and deprotonation between electrolyte and insulator by light pulse. And scanned light pulse allows two-dimensional imaging of the distribution of chemical/biological species on the surface of sensor. An important challenge is to achieve low-cost, strong anti-interference and high-performance silicon-based LAPS. In this study, we propose to combine microsphere lithography with wet etching to fabricate well-ordered, tunable and low-cost pyramidal pits-patterned silicon as semiconductor of LAPS. The morphology and optical properties of pyramidal pits-patterned silicon are tested and analyzed. The sensing characteristics and the pH imaging performance of LAPS are tested and evaluated. The experiment results and theoretical analyses show that LAPS with pyramidal pits-patterned silicon has acceptable pH response, good long-term stability, and high performance in terms of photocurrent enhancement ratio, signal-to-noise ratio and pH imaging. This work can provide a simple, low-cost, strong anti-interference and high-performance device for pH-related chemical/biological analysis.

Engineering the Polarization Sensitivity in All‐2D Photodetectors Composed of Semimetal MoTe2 and Semiconductor WS2

AbstractThe polarization sensitivity, defined as the photocurrent anisotropic ratio, is of high importance for the polarization‐sensitive photodetectors that determine the resolution and contrast of captured images. Conventional polarized light detectors utilizing optical filters suffer from complex fabrication and calibration processes. 2D materials with in‐plane anisotropic structures can serve to realize the detection of polarized light, yet the polarization sensitivity still remains poor, hampering practical implementations. In this work, highly sensitive polarized photodetectors are achieved by designing an all‐2D device architecture composed of anisotropic semimetal MoTe2 and semiconductor WS2. In MoTe2/WS2 heterojunction, the built‐in electric field at the interface between a semimetal and a semiconductor yields a strong photovoltaic effect, leading to a fast (≈45 µs) and polarization‐sensitive photodetection due to the anisotropic features of MoTe2. It is shown that MoTe2/WS2/MoTe2 devices feature a polarization sensitivity of 13, a nearly five‐fold improvement by aligning the lattice orientation of side MoTe2 from cross to parallel configurations. This work offers a new degree of freedom to engineer the polarization sensitivity and photodetection performance by optimizing crystal orientation in an all‐2D architecture comprising semimetal and semiconducting 2D materials.