The growth rate and dielectric properties of the Ba(Sn x Ti 1− x )O 3 (BS x T 1− x ) thin films prepared by radio frequency (rf) magnetron sputtering at room temperature have been characterized as a function of deposition parameters. The BS x T 1− x thin films are amorphous when deposited at low rf power ( R p = 100 and 125 W). The XRD result shows merely a single perovskite (BaTiO 3) structure and the intensity of reflection peaks increases with the rf power increasing from 125 to 150 and 175 W. When the BS x T 1− x thin film is deposited at R p = 150 W and room temperature, the deposition rate decreases with the increasing working pressure ( W p) and O 2/(O 2 + Ar) ratio ( O r). The refractive index of the BS x T 1− x thin films is between 2.1 and 2.3, which shows that the variation of working pressure is not very significant. The dielectric constant of the BS x T 1− x thin films increases with the R p increasing from 100 to 150 W and decreases above 150 W. The leakage current density of the BS 0.15T 0.85 thin films nearly displays the ohmic behavior when the electric field is below 50 kV/cm. The conduction mechanism of the BS 0.15T 0.85 thin films involves the Schottky emission (SE) and Poole–Frenkel emission (PF) models. The BS x T 1− x thin film shows a ferroelectric characteristic in the polarization-electric field plot.