Abstract
Abstract The aim of this study is to find the effects of oxygen flow rate during manufacturing on the sensitivity of SnO 2 (tin oxide) thin films to ethanol (C 2 H 5 OH). In this study, an RF sputtering process was employed to fabricate the SnO 2 thin films. The SnO 2 was deposited on gold electrode silicon microchips. A target composed of SnO 2 doped with 1 at.% Li was used with a working pressure of 3 mTorr. The RF power was fixed at 150 W. The reaction gas was a mixture of argon and oxygen. The total flow rate was constant at 50 sccm with the O 2 /Ar ratio varying from 0.2 to 0.8. An annealing heat treatment was employed at 400 °C for 1 h to stabilize the properties of the films. The sensitivity of the film to ethanol was tested by placing the micro-reactor device on a hot plate, heated to 300 °C, and measuring the variation of electrical resistivity of the film with and without the presence of ethanol. The results show that an O 2 /Ar flow ratio of 0.2 produces films with the highest ethanol sensitivity. Before heat treating, the ethanol sensitivity was 126. After heat treating at 400 °C for 1 h, the sensitivity decreased to 104.
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