Crystallographic pits were grown on Al(100) at temperatures from 30 to 90°C, in solutions of Pits grew during a galvanostatic anodic pulse for 5-100 ms that was preceded by a galvanostatic cathodic pulse of 50 ms. The anodic potential has a small peak for 1-2 ms and then remains constant. The cathodic pulse causes rapid pit nucleation so most pits nucleate within 5 ms, and pit passivation and pit growth are the dominant processes at longer times. It was determined that a substantial fraction of pits passivates during the pulse, so growth rates were calculated from the increase in largest pit size with pulse duration. The growth rate is constant at each temperature and follows an Arrhenius temperature dependence with an activation energy of There are significant differences between the growth of pits and the growth of etch tunnels. The activation energy for pit growth is one-half that for tunnel growth, and pit growth rates are greater than tunnel growth rates. It is proposed that the chemisorbed chloride complex postulated to be an intermediary for Al dissolution changes from one structure during pit growth to another, more stable, structure during tunnel growth. © 2004 The Electrochemical Society. All rights reserved.