Abstract
Apparent turnover frequency (TOF) rates for the C−NO reaction were calculated on the basis of overall rates measured for three graphite samples with different dimensions at various temperatures (500−750 °C) and partial pressures. These TOF rates were rates per edge site on the edges of the crystals. The TOF rates were also determined for one of these graphites for the C−N2O reaction. Temperature breaks on the Arrhenius plots were observed for the C−NO reaction while no such temperature break was observed in TOF rates measured by directly following the etch pit growth rates (using STM). The temperature break phenomenon is attributed to pitting (and the ensuing pit growth) by O atoms dissociated from NO. The TOF rates appeared to be inversely proportional to the basal plane crystal size. This result was attributed to the steps and defects that also contributed significantly to the overall rates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
