Rashba-Edelstein Effect Research Articles

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at the Interface of Graphene/WS2 Heterostructures at Room Temperature.

We report experimental investigations of spin-to-charge current conversion and charge transfer (CT) dynamics at the interface of the graphene/WS2 van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py=Ni81Fe19) and injected into the graphene/WS2 heterostructure through a spin pumping process. The observed spin-to-charge current conversion in the heterostructure is attributed to the inverse Rashba-Edelstein effect (IREE) at the graphene/WS2 interface. Interfacial CT dynamics in this heterostructure was investigated based on the framework of the core-hole clock (CHC) approach. The results obtained from spin pumping and CHC studies show that the spin-to-charge current conversion and charge transfer processes are more efficient in the graphene/WS2 heterostructure compared to isolated WS2 and graphene films. The results show that the presence of WS2 flakes improves the current conversion efficiency. These experimental results are corroborated by density functional theory (DFT) calculations, which reveal (i) Rashba spin-orbit splitting of graphene orbitals and (ii) electronic coupling between graphene and WS2 orbitals. This study provides valuable insights for optimizing the design and performance of spintronic devices.

Large dampinglike torque contribution originating from the orbital Rashba-Edelstein effect at a Pt/CoO interface

Large dampinglike torque contribution originating from the orbital Rashba-Edelstein effect at a Pt/CoO interface

Theory of the inverse Rashba-Edelstein effect induced by thermal spin injection

Theory of the inverse Rashba-Edelstein effect induced by thermal spin injection

Efficient Orbitronic Terahertz Emission Based on CoPt Alloy.

Orbitronic devices operate by manipulating orbitally polarized currents. Recent studies have shown that these orbital currents can be excited by femtosecond laser pulses in a ferromagnet such as Ni and converted into ultrafast charge currents via orbital-to-charge conversion. However, the terahertz emission from orbitronic terahertz emitters based on Ni is still much weaker than that of the typical spintronic terahertz emitter. Here, this work reports a more efficient light-induced generation of orbital current from a CoPt alloy, and the terahertz emission from CoPt/Cu/MgO is comparable to that of benchmark spintronic terahertz emitters. By varying the composition of the CoPt alloy, the thickness of Cu, and the capping layer, this work confirms that THz emission primarily originates from the orbital accumulation generated within CoPt, propagating through Cu, followed by subsequent orbital-to-charge conversion due to the inverse orbital Rashba-Edelstein effect at the Cu/MgO interface. This study provides strong evidence for the efficient orbital current generation in CoPt alloy, paving the way for efficient orbital terahertz emitters.

Probing the Spin-Momentum Locking on Rashba Surfaces via Spin Current.

In this study, we investigate the spin-momentum locking phenomenon on Rashba states of antimony (Sb) films. Utilizing spin pumping in conjunction with an external charge current, we uncover the topological properties of Sb surface states. Our key finding is the precise manipulation of the direction and magnitude of the charge current generated by the inverse Rashba-Edelstein effect. This control is achieved through the dynamic interaction between out-of-equilibrium pumped spins and spin-momentum-locked flowing spins, which are perpendicular to the charge current. Our results highlight Sb as a promising material for both fundamental and applied spintronics research. The studied Sb nanostructures demonstrate potential for the development of low-power logic gates operating with currents in the microampere range, paving the way for advanced spintronic applications.

Colossal Orbital Current Induced by Gradient Oxidation for High-Efficiency Magnetization Switching.

Orbital angular momentum flow can be used to develop a low-dissipation electronic information device by manipulating the orbital current. However, efficiently generating and fully harnessing orbital currents is a formidable challenge. In this study, an approach is presented that induces a colossal orbital current by gradient oxidation in Pt/Ta to enhance spin-orbit torque (SOT) and achieve high-efficiency magnetization switching. The maximum efficiency of the SOT before and after the gradient oxidation of Ta is improved relative to that of Pt by ≈600 and 1200%, respectively. The large SOT originates from the colossal orbital current because of the orbital Rashba-Edelstein effect induced by the gradient oxidation of Ta. In addition, a large spin-to-charge conversion efficiency is observed in yttrium iron garnet/Pt/TaOx because of the inverse orbital Rashba-Edelstein effect. Harnessing the orbital current can help effectively minimize the critical current density of the current-induced magnetization switching to 2.26-1.08 × 106 Acm-2, marking a 12-fold reduction compared to that using Pt. This findings provide a new path for research on low-dissipation spin-orbit devices and improve the tunability of orbital current generation.

Interfacial Spintronic THz Emission

AbstractThe broken inversion symmetry at the ferromagnet (FM)/heavy‐metal (HM) interface leads to spin‐dependent degeneracy of the energy band, forming spin‐polarized surface states. As a result, the interface serves as an effective medium for converting spin accumulation into 2D charge current through the inverse Rashba–Edelstein effect. Exploring and assessing this spin‐to‐charge conversion (SCC) phenomenon at the FM/HM interface can offer a promising avenue to surpass the presumed limits of SCC in bulk HM layers. Spintronic heterostructures are utilized as a platform to measure the SCC experienced by photoexcited spin currents. Therefore, FM/HM heterostructures emitting terahertz electric field upon illumination by femtosecond laser pulses enable quantitative measure of the ultrafast SCC process. This results demonstrate a robust interfacial spin‐to‐charge conversion (iSCC) within a synthetic antiferromagnetic heterostructure, specifically for the NiFe/Ru/NiFe configuration, by isolating the SCC contribution originating from the interface and the bulk heavy‐metal (HM). Through the measurements of the emitted terahertz pulse, the iSCC at the NiFe/Ru interface is identified to be ≈27% of the strength as compared to SCC from the highest spin‐Hall conducting heavy‐metal, Pt. The results thus highlight the significance of interfacial engineering as a promising pathway for achieving efficient ultrafast spintronic devices.

Sign reversal and amplitude enhancement of unidirectional magnetoresistance in CoFe2O4/Pt heterostructures due to spin canting

We report the observation of unidirectional magnetoresistance (UMR) in the ferrimagnetic insulator CoFe2O4(CFO)/Pt heterostructures, which stem from the giant interfacial Rashba–Edelstein effect. Furthermore, UMR has been found to show sign reversal and amplitude enhancement characteristics with decrease in temperature. We have ascribed it to the modulated distortion of Fermi contours due to pronounced spin canting at low temperatures. The presence of spin canting induced interfacial magnetic state has also been demonstrated by spin Hall magnetoresistance in CFO/Pt/Co/Al2O3 films. Our work reveals the interfacial magnetic state modulated UMR in CFO/Pt bilayers, thereby paving the way for extending its applications in ferrimagnet-based spintronic devices.

Efficient Magnon Injection and Detection via the Orbital Rashba-Edelstein Effect.

Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here, we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuO_{x} electrodes. Moreover, we note distinct variations in efficiency for magnon spin injection and detection, indicating a disparity in the direct and inverse orbital Rashba-Edelstein effect efficiencies.

Quantifying the large contribution from orbital Rashba–Edelstein effect to the effective damping-like torque on magnetization

The generation of large spin currents, and the associated spin torques, which are at the heart of modern spintronics, has long been achieved by charge-to-spin conversion mechanisms, i.e., the spin Hall effect and/or the Rashba–Edelstein effect, intrinsically linked to strong spin–orbit coupling. Recently, a novel path has been predicted and observed for achieving significant current-induced torques originating from light elements, hence possessing weak spin–orbit interaction. These findings point out to the potential involvement of the orbital counterpart of electrons, namely the orbital Hall and orbital Rashba–Edelstein effects. In this study, we aim at quantifying these orbital-related contributions to the effective torques acting on a thin Co layer in different systems. First, we demonstrate in Pt|Co|Cu|AlOx stacking a comparable torque strength coming from the conversion due to the orbital Rashba–Edelstein effect at the Cu|AlOx interface and the one from the effective spin Hall effect in the bottom Pt|Co system. Second, in order to amplify the orbital-to-spin conversion, we investigate the impact of an intermediate Pt layer in Co|Pt|Cu|CuOx. From the Pt thickness dependence of the effective torques determined by harmonic Hall measurements complemented by spin Hall magneto-resistance and THz spectroscopy experiments, we demonstrate that a large orbital Rashba–Edelstein effect is present at the Cu|CuOx interface, leading to a twofold enhancement of the net torques on Co for the optimal Pt thickness. Our findings not only demonstrate the crucial role that orbital currents can play in low-dimensional systems with weak spin–orbit coupling but also reveal that they enable more energy efficient manipulation of magnetization in spintronic devices.

Emerging Nonlinear Photocurrents in Lead Halide Perovskites for Spintronics.

Lead halide perovskites (LHPs) containing organic parts are emerging optoelectronic materials with a wide range of applications thanks to their high optical absorption, carrier mobility, and easy preparation methods. They possess spin-dependent properties, such as strong spin-orbit coupling (SOC), and are promising for spintronics. The Rashba effect in LHPs can be manipulated by a magnetic field and a polarized light field. Considering the surfaces and interfaces of LHPs, light polarization-dependent optoelectronics of LHPs has attracted attention, especially in terms of spin-dependent photocurrents (SDPs). Currently, there are intense efforts being made in the identification and separation of SDPs and spin-to-charge interconversion in LHP. Here, we provide a comprehensive review of second-order nonlinear photocurrents in LHP in regard to spintronics. First, a detailed background on Rashba SOC and its related effects (including the inverse Rashba-Edelstein effect) is given. Subsequently, nonlinear photo-induced effects leading to SDPs are presented. Then, SDPs due to the photo-induced inverse spin Hall effect and the circular photogalvanic effect, together with photocurrent due to the photon drag effect, are compared. This is followed by the main focus of nonlinear photocurrents in LHPs containing organic parts, starting from fundamentals related to spin-dependent optoelectronics. Finally, we conclude with a brief summary and future prospects.

Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission.

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronicemitters.

Micromagnetic modeling of SOT-MRAM dynamics

We present a flexible and efficient approach to modeling the magnetization dynamics in modern SOT-MRAM cells, by coupling charge, spin, and magnetization dynamics in a three-dimensional framework. We expand on existing literature, to obtain spin current boundary conditions for modeling the Rashba-Edelstein effect. We compute the spin–orbit torques originating from both, the spin Hall and Rashba-Edelstein effect, and show that our model can reproduce experimental results for the thickness dependence of the spin torques in an Ir/CoFeB bilayer structure. Furthermore, we verify our approach by simulating magnetization reversal in field-free SOT-MRAM cells, and show that with the inclusion of the interfacial Dzyaloshinskii–Moriya interaction, we obtain domain wall motion similar to previously reported experimental results.

Spin selectivity in elemental tellurium and other chiral materials

The phenomenon of chirality-induced spin selectivity (CISS), where chiral organic molecules enable the selective transmission of electrons spin-polarized along the direction of electric current, has been studied for nearly two decades. Despite its technological relevance, CISS is not fully understood. Recent studies have expanded the concept of spin selectivity to chiral inorganic crystals, offering promise for magnet-free spintronics and other applications. This Perspective reviews recent developments on spin selectivity in non-magnetic solid-state materials, whereby chirality-dependent charge-to-spin conversion is responsible for transforming electric currents into spin signals, and spin transport within devices. Notably, chiral systems often outperform non-chiral ones in terms of conversion efficiency and facilitate long-range spin transport, which makes them relevant for both fundamental and applied physics. After examining the archetypal example of the chiral crystal, elemental tellurium, and the studies of spin selectivity in Weyl semimetals, we discuss its origin in terms of the unconventional (collinear) Rashba–Edelstein effect. We also explore key factors affecting the conversion efficiency and robustness of spin transport, focusing on persistent spin textures and their influence on spin lifetime. In addition, we discuss the potential impact of band velocities and the role of orbital contributions, as well as the differences associated with reduced dimensionality, providing a roadmap for guiding future theoretical, experimental, and applied studies.

Giant interfacial spin Hall angle from Rashba-Edelstein effect revealed by the spin Hall Hanle process

Giant interfacial spin Hall angle from Rashba-Edelstein effect revealed by the spin Hall Hanle process

Manipulation of Spin-Orbit Torque in Tungsten Oxide/Manganite Heterostructure by Ionic Liquid Gating and Orbit Engineering.

Spin-orbit coupling (SOC) is the interaction between electron's spin and orbital motion, which could realize a charge-to-spin current conversion and enable an innovative method to switch the magnetization by spin-orbit torque (SOT). Varied techniques have been developed to manipulate and improve the SOT, but the role of the orbit degree of freedom, which should have a crucial bearing on the SOC and SOT, is still confusing. Here, we find that the charge-to-spin current conversion and SOT in W3O8-δ/(La, Sr)MnO3 could be produced or eliminated by ionic liquid gating. Through tuning the preferential occupancy of Mn/W-d electrons from the in-plane (dx2-y2) to out-of-plane (d3z2-r2) orbit, the SOT damping-like field efficiency is nearly doubled due to the enhanced spin Hall effect and interfacial Rashba-Edelstein effect. These findings not only offer intriguing opportunities to control the SOT for high-efficient spintronic devices but also could be a fundamental step toward spin-orbitronics in the future.

Phase biasing of a Josephson junction using Rashba–Edelstein effect

A charge-current-induced shift in the spin-locked Fermi surface leads to a non-equilibrium spin density at a Rashba interface, commonly known as the Rashba–Edelstein effect. Since this is an intrinsically interfacial property, direct detection of the spin moment is difficult. Here we demonstrate that a planar Josephson Junction, realized by placing two closely spaced superconducting electrodes over a Rashba interface, allows for a direct detection of the spin moment as an additional phase in the junction. Asymmetric Fraunhofer patterns obtained for Nb-(Pt/Cu)-Nb nano-junctions, due to the locking of Rashba–Edelstein spin moment to the flux quantum in the junction, provide clear signatures of this effect. This simple experiment offers a fresh perspective on direct detection of spin polarization induced by various spin-orbit effects. In addition, this platform also offers a magnetic-field-controlled phase biasing mechanism in conjunction with the Rashba–Edelstein spin-orbit effect for superconducting quantum circuits.

Surface-state mediated spin-to-charge conversion in Sb films via bilateral spin current injection

The spin-to-charge conversion phenomenon is investigated in a trilayer structure consisting of Co(12 nm)/Sb(t)/Py(12 nm), where the thickness t of the antimony layer is varied. Using the spin-pumping technique, a pure spin current is injected from both FM layers into the middle layer, the DC voltage is then measured. We observe a spin-to-charge mechanism in the Sb layer that exhibits striking similarities to the inverse Rashba–Edelstein effect (IREE), driven by surface states.

Anomalous Hall effect in naturally oxidized normal-metal Al/Cu double films

An unexpectedly larger current-induced spin–orbit torque in oxidized Cu (CuO x )/ferromagnet (FM) than heavy-metal/FM has recently attracted intense attention in spintronic studies. Although the two mechanisms, interfacial Rashba Edelstein effect and spin-vorticity coupling, have been put forward based on the two different conductive features of CuO x , i.e. electrical insulator and gradient of electrical mobility, the detailed investigation of transport of CuO x is still lacking. Here we experimentally report the positive and negative anomalous Hall effect (AHE) in naturally oxidized normal-metal Al/Cu double films. We found that the onset temperature of AHE corresponds to magnetic transition temperature of CuO x . Furthermore, by comparing Hall resistance of the crystalline and amorphous Cu/Al double films, we identify that the positive anomalous Hall resistance attributes to magnetic moment of CuO x itself, while the negative anomalous Hall resistance can originate from the spin or orbital currents generated at the CuO x /AlO x interface interact with magnetization of CuO x and its inverse process.

Theory of inverse Rashba-Edelstein effect induced by spin pumping into a two-dimensional electron gas

Theory of inverse Rashba-Edelstein effect induced by spin pumping into a two-dimensional electron gas