Range Of Heavy Ions Research Articles

Range of heavy ions implanted into solids as measured by He ion backscattering

Selected ions ranging in mass from 20Ne to 209Bi were implanted at energies of 120–2000 keV using electromagnetic isotope separators. Range profiles of the implants were measured by 4He ion backscattering. The range and range straggling data obtained are compared to theoretical calculations.

Heavy ion ranges at 100 keV in aluminium

A systematic study of the range of heavy ions ( M 1 > 130) in aluminum ( M 1 = 27) has been initiated and this letter reports some interesting preliminary findings.

X-Ray Production in Ion-Atom Collisions: The Influence of Level Matching

Cross sections for $L$ x-ray production in Cu have been measured for collisions between Cu and a wide range of heavy ions and atoms, for collision energies in the range 40 keV to 1.1 MeV. The cross sections show a very strong cyclic dependence on the $Z$ of the collision partner. These data indicate a lack of reciprocity in the roles of target and projectile.

Ion implantation :A new method of doping semiconductors–I

Abstract A novel method for doping semiconductors is ion implantation where impurities are injected in the form of high-energy ions. The range of these ions is well defined and is a function of ion energy and mass, the nature of the crystel and its orientation to the beam. In addition to its application to semiconductor device manufacture, ion implantation involves a good deal of interesting physics over a wide field, and in order to include the important aspect the article hes been divided into two parts. In Part I the current theory for the range of heavy ions in amorphous and crystalline materials is summarized with the aid of a simple model that demonstrates some of the important features. Some experimental results for the ranges of particles in semiconductors are given and the various methods used to obtain them are reviewed. In addition, typical apparatus used for ion implantation is described with partiaulsr reference to ion sources. In Part II some of the interesting techniques used to study the properties of implanted layers will be described. In particular, the location of dopant atoms in the crystel and the disorder of the lattice after bombardment can be investigated by studying the back-scattered yield from crystals bombarded with ‘probe’ beams of, for exemple, He+ ions. This method will be described and typical results will be presented together with electrical measurements such as the mobility of carriers in the implanted layers. Damage in the crystal can also be studied using electron diffraction and electron microscopy, and some of the work in this field will be described. In addition, the potential advantages and uses of ion implantation will be outlined with reference to some of the semiconductor devices that have already been made using this technique.

Range of Heavy Ions in Solids

The ranges of N, Ne, Ar, Kr, and Xe ions in Be, B, C, and Al have been measured to \ifmmode\pm\else\textpm\fi{}10% for incident ion energy 50-500 kev. A monoenergetic ion beam from an electrostatic accelerator strikes a thick target of the absorber, and the penetration depth is determined by a momentum analysis of monoenergetic protons elastically scattered from the target and the embedded atoms. An expression relating the penetration depth to the actual path length is derived. A linear range-energy behavior is found for Ar, Kr, and Xe ions; for N and Ne ions $\frac{\mathrm{dE}}{\mathrm{dX}}$ increases with ion energy. The experimental ranges are 20% shorter than theoretical values based on energy loss by elastic nuclear collisions. By including electronic contributions to the stopping process, good agreement with experiment is achieved.