Measured Raman Spectra Research Articles

Facile preparation of deep eutectic solvents having high electrical conductivities

In the present study, we demonstrate the facile preparation of deep eutectic solvents (DESs) composed of various imidazolium iodides and iodine. The electrical conductivity of the DESs was high and was controllable by changing the composition of the mixtures and the imidazolium cation species. In particular, the DES composed of 1-ethyl-3-methylimidazolium iodide and iodine in a 1:4 molar ratio showed an electrical conductivity as high as 70 mS cm−1, which was higher than that of ionic liquid (1-butyl-3-methylimidazolium iodide and 1-hexyl-3-methylimidazolium iodide) mixtures with iodine. The electrical conductivity of DESs based on 1-alkyl-3-methylimidazolium iodides increased with increasing iodine content. The high electrical conductivity of DESs was attributed to the Grotthuss mechanism in polyiodide based on the viscosity results, Raman spectrum measurements, and quantum chemistry calculations.

A family of edge-sharing bi-octahedral diruthenium(III,III) compounds containing Ru-Ru single bonds.

From paddlewheel starting reactants Ru2(R'CO2)4+, a family of edge-sharing bi-octahedral (ESBO) diruthenium(III,III) compounds has been prepared, formulated as Ru2(μ-O2CR')2(μ-OR)2(η-L)2 (1-10) [R' = CH3, R = CH3, L = acac (1), tfac (2); R' = CH3, R = CH2CH3, L = hfac (3); R' = CH2CH3, R = CH3, L = acac (4), tfac (5); R' = CH2CH3, R = CH2CH3, L = hfac (6); R' = CH2Cl, R = CH3, L = tfac (7); R' = CH2Cl, R = CH2CH3, L = hfac (8); R' = C6H5, R = CH3, L = tfac (9); and R' = H, R = CH3, L = acac (10); here, acac, tfac and hfac represent acetylacetone, trifluoroacetylacetone and hexafluoroacetylacetone, respectively]. Compounds 1-10 have a similar ESBO coordination geometry of the Ru(μ-O2CR')2(μ-OR)2Ru core with a Ru-Ru center chelated and bridged by two μ-O2CR' and two μ-OR in a trans manner, and each Ru center is also coordinated with a η2-L bidentate ligand. The Ru-Ru distances fall in the range of 2.4560(9)-2.4771(4) Å. The investigation of the electronic spectra and vibrational frequencies as well as theoretical studies with density functional theory (DFT) reveal that compounds 1-10 are ESBO bimetallic species of d5-d5 valence electron counts showing a σ2π2δ2δ*2π*2 electronic configuration. Varying -CH3 to -CF3 groups on the η2-L bidentate ligands coordinating to the Ru(μ-O2CR')2(μ-OR)2Ru core, and according to Raman spectrum measurements combined with theoretical calculations, the intense bands of compounds 1-10 appearing at ∼345 cm-1 in the small-wavenumber region can be assigned to the stretching of the Ru-Ru single bond.

Interactions of cellulose- and lignin-derived radicals during pyrolysis: An in-situ Electron Paramagnetic Resonance (EPR) study

Lignocellulosic biomass can be converted to biochar, bio-oil and gas through reactions of non-volatile stabilised free radicals (SFRs) and volatile radicals during thermal conversion. In the process, the interactions between radicals from different biomass components play an essential role. Figuring out the interactions of radicals during pyrolysis holds the key to revealing the interaction mechanism of biomass components. In this study, the evolution of SFRs during the co-pyrolysis of cellulose and lignin was explored using in-situ electron paramagnetic resonance (EPR) detection. The interactions of cellulose- and lignin-derived radicals were analysed based on the variation of SFRs, thermogravimetric behavior and Raman spectrum measurement. The results indicate that the interactions of radicals influence char yield, char structure and the SFRs evolution during pyrolysis. The interaction of volatile radicals and SFRs increases the char yield and promotes the condensation of aromatic structure in biochar. At temperatures above 400 °C, the interaction between cellulose- and lignin-derived SFRs leads to the coupling of radicals, which forms an unstable structure in the hot nascent biochar. In the subsequent cooling process, the weak bonds from interactions may break due to the structure shrinkage, which promotes radical reactions and further changes the char structure.

Temperature Dependence of Raman Peak Shift in Single-Crystalline Si-Rich Sige

Background and Objectives Silicon-germanium (SiGe) is used for thermoelectric devices since its thermal conductivity is lower than either pure Si or Ge. Indeed, the material was used in components of the Voyager and New Horizons deep-space craft because of its superior nanoscale heat conductivity. Improving SiGe for better thermoelectric devices requires ever more precise measurements of nanoscale heat conductivity and a comprehensive study on its phonon-scattering mechanism. Especially, a relationship between Raman shift ω and temperature T (dω/dT) is required through the highly precise measurements of its temperature-dependence. Burke et al. have reported the Ge fraction dependence of dω/dT for Si-Si, Si-Ge, and Ge-Ge vibration modes of polycrystalline bulk SiGe samples with high laser power excitation [1]. However, the reported values of dω/dT may be affected by phonon scattering at grain boundaries and the local heating caused by high laser power excitation. Here, we investigated dω/dT of single-crystalline bulk SiGe and its dependence on the Ge fraction by using variable-temperature Raman spectroscopy. Experiments The (001)-oriented single-crystalline Si-rich SiGe bulk samples were prepared by two different growth methods; the Czochralski (Ge fraction: 16%) [2] and traveling liquidus zone (TLZ) methods (Ge fraction: 32 and 45%) [3]. All samples were confirmed to be strain-free by X-ray diffraction (XRD). We also measured Raman spectrum of single-crystalline Si as a reference. For Raman spectroscopy measurements, the wavelength of the excitation source was 532 nm, the focal length of the spectrometer was 2,000 mm, the laser power at the sample surface was kept to less than 1 mW. The sample temperatures were set between 50 and 300°C in 50°C steps, and the Raman signal was measured twice at each temperature (i.e., during heating and cooling). Results and Discussion Raman spectra of Si-Si mode in SiGe (Ge fraction: 16%) are shown in Fig. 1(a). With increasing temperature, the full width at half maximum (FWHM) of the Raman spectra increased and shifted toward the lower side of wavenumber. This wavenumber shift is considered to be caused by the anharmonic vibrations becoming dominant as the temperature increases, and the phonon frequency decrease due to the thermal expansion of the crystal. Figure 1(b) shows the temperature dependences of the Si-Si Raman peak shifts. We experimentally clarified the dω/dT are approximately constant in each bulk SiGe sample, as shown in Fig. 1(b). Figure 1(c) shows the Ge fraction dependence of -(dω/dT) for Si-Si mode. As a result, we found that dω/dT for Si-Si mode is independent of Ge fraction unlike the study of Burke et al. It was reported that the dω/dT depends on the coefficient of linear thermal expansion and anharmonic constants [4]. From the obtained dω/dT values in the investigated range of Ge fraction, we consider that the anharmonic constants of SiGe alloy do not change by Ge fraction. Thus, the Si-Si anharmonic vibration is supposed to be not affected by the Ge fraction in SiGe alloy. In conclusion, we determined dω/dT= -0.023 cm-1/℃ for Si-Si mode from experiments with single-crystalline bulk SiGe samples and low laser power excitation. Acknowledgement This work was supported by Grant-in-Aid for Scientific Research (21K14201).

Structural and electrical properties of bismuth sodium titanate ceramic

Single-phase lead-free Bi0.5Na0.5TiO3 (BNT) perovskite ferroelectric ceramic was produced using a solid-state reaction method. A detailed investigation of the structural and electrical properties of BNT ceramic is conferred. According to phase analysis employing Rietveld refined X-Ray diffraction, the crystal structure is single phase with rhombohedral (R3C) symmetry. Raman spectra measurement also confirms the rhombohedral structure of BNT by originating numerous peaks from the TiO6 octahedron. The ferroelectric character of the BNT sample was established by a hysteresis loop measurement of polarisation vs electric field (P-E). The remnant polarisation (Pr) and coercive field (Ec) have characteristic values of 1.63 μC/cm2 and 29.91 kV/cm, respectively. The ferroelectric phase change is seen in the temperature-dependent dielectric research, with a transition temperature of 323°C. The compound possessed a low value of tanδ even at a high temperature (500°C) at 1 MHz. The prepared sample exhibited excellent dielectric characteristics from room temperature to high temperatures, making it ideal for various applications.

Precision evaluation of nitrogen isotope ratios by Raman spectrometry.

We measured Raman spectra of N2 fluids obtained at 0.1-25MPa at room temperature. The 14N15N peak in the Raman spectrum of a low-pressure N2 fluid is difficult to detect because of the prevalence of a group of peaks attributed to rotational vibration of 14N2. The Raman peaks of 14N15N and 14N2 of N2 fluid at 25MPa were acquired at various exposure times. The mean values and standard deviations of the peak height ratios and peak area ones of 14N15N and 14N2 were examined for each time. The standard deviations of the peak height ratios and peak area ones were 2.2% and 1.9%, respectively, for 20 spectra acquired with peak height of 1 million counts of 14N2. The uncertainties are about two times higher than those predicted from the noise of a CCD. Improvement of the pixel resolution can enhance the precision of the nitrogen isotope ratios by Raman spectroscopy.

The Raman Active Vibrational Modes of Anthraquinones.

Anthraquinones are a family of natural products with useful bioactivity and optical properties. An anthraquinone called parietin is produced by extremophiles to protect against solar ultraviolet B radiation, so it is a potential biosignature in astrobiology. Raman spectroscopy, which is now used in space environments, can detect molecules such as parietin based on molecular vibrations. In this study, we show that time-dependent density functional theory (TDDFT) can accurately calculate the Raman spectra of three dihydroxyanthraquinones: parietin, emodin, and chrysophanol. By comparing calculated spectra to measured Raman spectra from purified powders, 10 vibrational modes are identified. The detailed molecular motions of these fused ring vibrations are described, and vibrations modes that are common to all three molecules are highlighted. In addition to powder spectra, Raman measurements from the thallus of Xanthoria parietina, a lichen that produces parietin, are reported, with excellent agreement to both the parietin powder and calculated Raman spectra. These results show that TDDFT calculations could make significant contributions to spectral analysis in the search for biotic organic materials beyond Earth.

Eliminating the Micropore Confinement Effect of Carbonaceous Electrodes for Promoting Zn‐Ion Storage Capability

Zinc-ion capacitors (ZICs) are promising technology for large-scale energy storage by integrating the attributes of supercapacitors and zinc-ion batteries. Unfortunately, the insufficient Zn2+ -storage active sites of carbonaceous cathode materials and the mismatch of pore sizes with charge carriers lead to unsatisfactory Zn2+ storage capability. Herein, new insights for boosting Zn2+ storage capability of activated nitrogen-doped hierarchical porous carbon materials (ANHPC-x) arereported by effectively eliminating the micropore confinement effect and synchronously elevating the utilization of active sites. Therefore, the best-performed ANHPC-2 delivers impressive electrochemical properties for ZICs in terms of excellent capacity (199.1 mAh g-1 ), energy density (155.2Wh kg-1 ), and durability (65000 cycles). Systematic ex situcharacterizations together with in situelectrochemical quartz crystal microbalance and Raman spectra measurements reveal that the remarkable electrochemical performance is assigned to the synergism of the Zn2+ , H+ , and SO4 2- co-adsorption mechanism and reversible chemical adsorption. Furthermore, the ANHPC-2-based quasi-solid-state ZIC demonstrates excellent electrochemical capability with an ultralong lifespan of up to 100 000 cycles. This work not only provides a promising strategy to improve the Zn2+ storage capability of carbonaceous materials but also sheds lights on charge-storage mechanism and advanced electrode materials' design for ZICs toward practical applications.

SepFree NMF: A Toolbox for Analyzing the Kinetics of Sequential Spectroscopic Data

This work addresses the problem of determining the number of components from sequential spectroscopic data analyzed by non-negative matrix factorization without separability assumption (SepFree NMF). These data are stored in a matrix M of dimension “measured times” versus “measured wavenumbers” and can be decomposed to obtain the spectral fingerprints of the states and their evolution over time. SepFree NMF assumes a memoryless (Markovian) process to underline the dynamics and decomposes M so that M=WH, with W representing the components’ fingerprints and H their kinetics. However, the rank of this decomposition (i.e., the number of physical states in the process) has to be guessed from pre-existing knowledge on the observed process. We propose a measure for determining the number of components with the computation of the minimal memory effect resulting from the decomposition; by quantifying how much the obtained factorization is deviating from the Markovian property, we are able to score factorizations of a different number of components. In this way, we estimate the number of different entities which contribute to the observed system, and we can extract kinetic information without knowing the characteristic spectra of the single components. This manuscript provides the mathematical background as well as an analysis of computer generated and experimental sequentially measured Raman spectra.

Deep Learning-Based Spectrum Reconstruction Method for Raman Spectroscopy

Raman spectroscopy, measured by a Raman spectrometer, is usually disturbed by the instrument response function and noise, which leads to certain measurement error and further affects the accuracy of substance identification. In this paper, we propose a spectral reconstruction method which combines the existing maximum a posteriori (MAP) method and deep learning (DL) to recover the degraded Raman spectrum. The proposed method first employs the MAP method to reconstruct the measured Raman spectra, so as to obtain preliminary estimated Raman spectra. Then, a convolutional neural network (CNN) is trained by using the preliminary estimated Raman spectra and the real Raman spectra to learn the mapping from the preliminary estimated Raman spectra to the real Raman spectra, so as to achieve a better spectral reconstruction effect than merely using the MAP method or a CNN. To prove the effectiveness of the proposed spectral reconstruction method, we employed the proposed method and some traditional spectral reconstruction methods to reconstruct the simulated and measured Raman spectra, respectively. The experimental results show that compared with traditional methods, the estimated Raman spectra reconstructed by the proposed method are closer to the real Raman spectra.

Raman investigations and ab initio calculations of natural diamond-lonsdaleite originating from New Caledonia

Here, we report the first occurrence so far of cubic diamond and lonsdaleite in a siliceous breccia hosted in nickel laterite from the Tiébaghi mine, New Caledonia. Diamond and lonsdaleite polytype occurred as minerals in surficial formed siliceous rocks. The vibrational properties and the calculated elastic properties and electronic band structure of 3C-diamond and lonsdaleite were studied by micro-Raman spectroscopy and ab initio calculation. Our measured Raman spectra demonstrate the coexistence of cubic diamond and lonsdaleite based on the correlation between ab initio calculation and experimental results. We showed that the position of the single Raman vibration mode for cubic diamond corresponds to the first order scattering of F2g symmetry at 1332 cm−1. For lonsdaleite, the ab initio calculations predict three fundamental vibrational modes: 1207 cm−1 (E2g), 1307 cm−1 (A1g), and 1330 cm−1 (E1g). The calculated indirect bandgaps of 3C-diamond and lonsdaleite at room temperature are 5.7 eV and 5.2 eV, respectively. The elastic anisotropy calculations show that lonsdaleite has the greatest shear modulus, bulk modulus and young’s modulus compared to cubic diamond, which indicates a high degree of hardness of this hexagonal structure of diamond.

Structure and optical properties of new nitro-derivatives of 2-N-alkiloamino-picoline N-oxide isomers

Three new 2-N-methylamino-4-nitropicoline-(3, 5 or 6) N-oxides were synthesised. Their structures were characterized on the basis of X-ray diffraction studies carried out for one of the isomers. The IR, Raman, electron UV-VIS and emission spectra measurements were conducted and analysed in terms of theoretical data. Quantum chemical DFT and NBO calculations were applied to analyse the results of the spectroscopic studies. Femtosecond excitation was used to recognise the excited energy level depopulation mechanism in the studied compounds. The influence of the methyl group position on the structural and optical properties of three studied isomeric N-oxides was discussed. Their prospective applications were proposed.

Identification of Polytype and Estimation of Carrier Concentration of Silicon Carbide Wafers by Analysis of Apparent Color using Image Processing Software

n-type SiC wafers with localized 4H, 6H, and 15 R polytype grains were photographed and their colors were analyzed to find correlations among polytypes, carrier concentration and apparent color. The SiC wafers were photographed and the color information of different colored regions from the photographs was extracted, both for RGB (red, green, and blue) and HSV (hue, saturation, and value) color space formats using image processing software (PicMan). Polytype and carrier concentration of n-type SiC wafers were identified from Raman spectra for correlation with the color analysis results. The carrier concentration of SiC wafers was estimated to be in the range of 2 × 1017 cm−3 to 1 × 1019 cm−3 from a line-shape analysis of measured Raman spectra. The color analysis revealed that there is very strong correlation between polytype and hue value. The carrier concentration strongly affects saturation and value of apparent color. SiC wafers with lower carrier concentration showed higher clarity (lower saturation (or colorless) and higher value (higher transparency)). As the carrier concentration is increased, the wafer becomes translucent (high saturation or colored) and dark or opaque (low value). The polytype and carrier concentration of SiC wafers can conveniently be estimated from their apparent color.

Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy

Detailed spectral structures in the low-temperature photoluminescence (3.5 K) of an InAlAs random alloy grown by molecular beam epitaxy on an InP substrate were studied, with three clearly distinguished emission peaks. Based on the temperature-dependent photoluminescence measurements, the two peaks at 1.5404 and 1.5229 eV are localized state emissions, and the one at 1.4916 eV is likely caused by longitudinal optical (LO) phonon replica. The peak assignments are also supported by excitation intensity-dependent photoluminescence spectrum and Raman spectrum measurements. The peak at 1.5229 eV shows a strongly localized behavior evidenced by the typical inverted S-shaped variation of the peak position with respect to increased temperatures which can be well described by the localized-state ensemble (LSE) model. A localization energy of around 19.8 meV is determined for the 1.5229 eV emission at 3.5 K. The temporal behaviors of these emissions at 3.5 K were also discussed based on the time-resolved photoluminescence spectra. The findings here unveil the characteristics of the localized states in the InAlAs alloy and may be useful for developing optoelectronic devices in the near IR region.

Band Structure and Lattice Vibration of Elemental Tellurium Investigated by Temperature‐Dependent Mid‐and‐Far Infrared Transmission and Raman Spectroscopy

Tellurium (Te) recently attracts much attention owing to its peculiar band structure arousing high‐efficiency thermoelectricity and layered crystal structure suitable for band engineering. Herein, the temperature evolution of band structure and lattice vibration in Te single crystal are studied by mid‐and‐far infrared transmission (7500–370 and 680–30 cm−1) and Raman spectra measurements. Mid‐infrared absorption spectra confirm Te is a narrow indirect gap semiconductor, in which the direct (indirect) bandgap is about 0.333 (0.325) eV, the two upper valence bands (H4 and H5) and the third valence band (H6) being about 0.333, 0.42, and 0.76 eV, respectively, below the conduction‐band minima at 5 K. Meanwhile, the direct and indirect gaps of Te reveal non‐monotonic variation from 5 to 290 K due to the competition between electron–phonon interaction and lattice thermal expansion, which is well described by the modified Manoogian–Leclerc model. Moreover, the temperature evolution of Raman and far‐infrared transmission spectra proves there are two kinds of phonons in Te, which originates from the different thermal expansion of Te atoms along parallel and vertical directions of spiral chain. Thus, the anisotropic thermal expansion in Te is indicated and a reference for studying thermoelectricity of Te‐based optoelectronic devices is provided.

Growth of KAlF4 and Na5Al3F14 Aluminum Fluoride Single Crystals by Bridgman Method

AbstractHighly transparent KAlF4 and Na5Al3F14 fluoride bulk single crystals in size of ≈Ф 50 mm × 10 mm are successfully grown for the first time by a modified Bridgman method. The physicochemical properties of the single crystals are investigated with the help of X‐ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG‐DTA), absorption spectrum, Fourier infrared spectroscopy, and Raman spectrum measurements. The KAlF4 and Na5Al3F14 phases of the obtained single crystals are determined from the results of XRD. The melting points of KAlF4 and Na5Al3F14 are measured to be ≈549 and ≈705 ℃ from their DTA curves. The maximum matrix phonon energies of KAlF4 and Na5Al3F14 single crystals are 544 and 530 cm–1 from their Raman spectra. The KAlF4 single crystal shows high transmittance from 2000 to 5500 nm, while Na5Al3F14 from 950 to 6000 nm. The energy gaps of KAlF4 and Na5Al3F14 are calculated to be 5.34 and 5.94 eV based on transmission spectra, respectively.

Tailoring SWCNTs surface morphology using PEI for highly selective and stable detection of Cu2+ heavy metal ion: a nanosensing platform

ABSTRACT Novel and facile investigation applying polyethylenimine (PEI) functionalised Single-wall Carbon Nanotubes (SWCNTs) for detection of heavy metal ion, copper (Cu2+) ions has been studied as a nanosensing platform. PEI/SWCNTs shows highly selective and rapid detection of Cu2+ ions since SWCNTs having large surface area shows high porosity and high chemical reactivity towards Cu2+ ions with high stability. FESEM and Raman Spectra measurements have been employed for characterising the nanocomposite and these techniques indicate that the PEI functionalised SWCNTs have been favourably synthesised. The detection of Cu2+ ions on the fabricated PEI/SWCNTs nanocomposite has been carried out by UV-vis spectroscopy. This study illustrates that PEI@SWCNTs nanoplatform is highly sensitive for selective and stable sensing of Cu2+ ions in the range of 0.01 µM to 100 µM with lower limit of detection (LOD) of 6.2 nM in aqueous medium. Selectivity and stability studies suggest that it is a unique and versatile platform for detection of copper ions rather in complex mediums with long-term usability.

Dry Transfer Process of Single-Layer Graphene on Multi-Layer Hexagonal Boron Nitride for High Quality Heterostructure

Carrier mobility of the graphene thin film is one of the most crucial factors to achieve superior device performance. Factors that influence the carrier mobility include film crystallinity, layer number, presence of contaminations, and effect of the substrate. In this work, to obtain high-quality graphene film, single-layer graphene film was formed on a hexagonal boron nitride (hBN) thin-film via mechanical exfoliation technique. Mechanical exfoliation of graphite was done on a silicon substrate covered with poly (methyl methacrylate)/ poly (acrylic acid). Three adjacent thin films, each having approximately 20 - 30 μm length and 3 - 4 μm width making an average area of 87.5 μm2 for each film. From the measured Raman spectrum, the 2D-to-G peak intensity ratio was 1.7, confirming that exfoliated graphene is a single layer. The absence of the D peak indicates minimum crystal defects in the film. The graphene layers were subsequently dry-transferred onto mechanically exfoliated multi-layer hBN thin film. The area of the exfoliated hBN is around 6,000 μm2. The quality of the transfer process was evaluated through inspection under an optical microscope. All three single-layer graphene thin films were successfully placed exactly on the hBN without any presence of bubble and wrinkle. The process was described very detailed. The formed single-layer graphene on hBN layer is expected to have superior electrical characteristics and can be utilized for the fabrication of high-performance nano device.

Positive and negative signal and line shape in stimulated Raman spectroscopy: Resonance femtosecond Raman spectra of diphenylbutadiene.

Resonance stimulated Raman signal and line shape are evaluated analytically under common electronic/vibrational dephasing and exponential Raman/probe pulse, exp(-|t|/τ). Generally, the signal from a particular state includes contributions from higher and lower electronic states. Thus, with S0 → S1 actinic excitation, the Raman signal consists of 15 Feynman diagrams entering with different signs. The negative signindicates vibrational coherences in S1 or higher Sn, whereas the positive signreveals coherences in S0 or Sn via S1 → Sn → Sm (n < m) coupling. The signal complexity is in contrast to spontaneous Raman with its single diagram only. The results are applied to femtosecond stimulated Raman spectra of trans-trans, cis-trans (ct), and cis-cis (cc) 1,4-diphenyl-1,3-butadiene, the ct and cc being reported for the first time. Upon actinic excitation, the Stokes spectra show negative bands from S1 or Sn. When approaching higher resonances Sn → Sm, some Raman bands switch their signfrom negative to positive, thus, indicating new coherences in Sn. The results are discussed, and the measured Raman spectra are compared to the computed quantum-chemical spectra.

Magneto-Raman Study of Magnon-Phonon Coupling in Two-Dimensional Ising Antiferromagnetic FePS3.

Recently, the coupling between magnons (quanta of spin waves) and phonons (quanta of lattice vibrations) in two-dimensional (2D) antiferromagnet FePS3 offers a myriad of applications ranging from spintronic devices to quantum information technologies. However, the reported magnon-phonon coupling in the FePS3 flake using Raman measurements requires an ultrahigh magnetic field up to 30 T. Here, we investigate the magnon-phonon coupling in FePS3 by near-resonant magneto-Raman spectroscopy under a relatively small magnetic field (|H0| ≤ 9 T). Under near-resonant excitation, we find more pronounced coupling effects that are absent in non-resonant excitation: three optical phonons sensitive to the applied magnetic field are resolved, two of which show a frequency anti-crossing coupling with magnon, while the other coupled phonon exhibits only a polarization-coupled character without frequency anti-crossing. Besides, our polarized Raman results also show the polarization transferring between coupled magnon-phonon modes. On the basis of a modified theoretical model, we can well explain the measured Raman spectra.