Qubit Readout Research Articles

Identifying Pauli spin blockade using deep learning

Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-device validation. We demonstrate our approach on a silicon field-effect transistor device and report an accuracy of 96% on different test devices, giving evidence that the approach is robust to device variability. Our algorithm, an essential step for realising fully automatic qubit tuning, is expected to be employable across all types of quantum dot devices.

Characterization of NbTiN Films With Thicknesses Below 20 nm for Low Power Kinetic Inductance Amplifiers

A quantum-limited amplification chain is a fundamental advantage for any application that may benefit from the detection of very faint signals. Reading out arrays of superconducting detectors (TESs or MKIDs), resonant cavities, or qubits, calls for large bandwidth amplifiers in addition to having the lowest possible noise. At millikelvin temperatures, Kinetic Inductance Traveling-Wave Parametric Amplifiers (KI-TWPAs) working in 3-way-mixing (3WM) and fabricated from a 20 nm thick NbTiN film have shown promising noise performances, as they can operate close to the quantum limit [1]. However, they still require fairly high pump power. Devices that would require lower pump power would be easier to implement in readout chains, could reach the quantum limit and they would be compatible with qubit readout. A possible solution for obtaining this optimal configuration is to use a thinner superconducting film. In this work we explore the properties of NbTiN films with a thickness less than 20 nm and we report the obtained experimental characterizations in terms of critical temperature, normal resistivity, and kinetic inductance. A new design for a 3WM KI-TWPA amplifier, based on these developed superconducting films, is introduced and discussed.

Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots

The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process are sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. We then analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage, we ensure the accuracy of the extrapolated probability. We then prove that the efficiency and robustness of this method are 60 times larger than those of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout of up to 0.7 K/1.5 T in the future.

Escaping Detrimental Interactions with Microwave-Dressed Transmon Qubits

Superconducting transmon qubits with fixed frequencies are widely used in many applications due to their advantages of better coherence and less control lines compared to the frequency tunable qubits. However, any uncontrolled interactions with the qubits such as the two-level systems could lead to adverse impacts, degrading the qubit coherence and inducing crosstalk. To mitigate the detrimental effect from uncontrolled interactions between qubits and defect modes in fixed-frequency transmon qubits, we propose and demonstrate an active approach using an off-resonance microwave drive to dress the qubit and to induce the ac-Stark shift on the qubit frequency. We show experimentally that the qubit frequency can be tuned well away from the defect mode so that the impact on qubit coherence is greatly reduced while maintaining the universal controls of the qubit initialization, readout, and single-qubit gate operations. Our approach provides an effective way for tuning the qubit frequency and suppressing the detrimental effect from the defect modes that happen to be located close to the qubit frequency.

Generalized fast quasiadiabatic population transfer for improved qubit readout, shuttling, and noise mitigation

Generalized fast quasiadiabatic population transfer for improved qubit readout, shuttling, and noise mitigation

Discriminating the Phase of a Coherent Tone with a Flux-Switchable Superconducting Circuit

We propose a new phase detection technique based on a flux-switchable superconducting circuit, the Josephson digital phase detector (JDPD), which is capable of discriminating between two phase values of a coherent input tone. When properly excited by an external flux, the JDPD is able to switch from a single-minimum to a double-minima potential and, consequently, relax in one of the two stable configurations depending on the phase sign of the input tone. The result of this operation is digitally encoded in the occupation probability of a phase particle in either of the two JDPD wells. In this work, we demonstrate the working principle of the JDPD up to a frequency of 400 MHz with a remarkable agreement with theoretical expectations. As a future scenario, we discuss the implementation of this technique to superconducting qubit readout. We also examine the JDPD compatibility with the single-flux-quantum architecture, employed to fast-drive and measure the device state.

Design and Analysis of a 4.2 mW 4 K 6–8 GHz CMOS LNA for Superconducting Qubit Readout

This article proposes a cryogenic inverter-based low noise amplifier (LNA) for qubit readout. Its input impedance matching is realized by a high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$</tex-math> </inline-formula> on-chip gate inductor and capacitive load through the gate-to-drain feedback capacitance of the input transistors. Cascode transistors are used to optimize the impedance matching, which results in a larger gate inductor and smaller load capacitor and hence a higher passive and inverter gain. Owing to the high passive gain and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$</tex-math> </inline-formula> -factor of the gate inductor at 4 K, the noise of the active stages is substantially suppressed with a negligible noise contribution of the gate inductor. Moreover, with the current re-use in the inverter topology, less power consumption is achieved for the given transconductance of transistors. The input impedance, gain, and noise analyses of the proposed LNA are performed for room temperature (RT) operation, and its noise optimization is done by taking the cryogenic operation of the devices into account. We demonstrate with the circuit analysis and measurement results that the input impedance of the LNA has a low sensitivity to variations on device parameters at cryogenic temperatures. The LNA is implemented in a 28 nm CMOS technology. It achieves 0.4–0.7 dB noise figure (NF) with 4.2 mW power consumption at 4 K, and its operating frequency is between 6–8 GHz. The LNA consumes very low power compared to the state-of-the-art cryogenic CMOS LNAs while providing similar NF performance at 4 K, which makes it suitable for dilution refrigerators.

Josephson parametric circulator with same-frequency signal ports, 200 MHz bandwidth, and high dynamic range

We demonstrate a 3-port Josephson parametric circulator matched to 50 Ω using second order Chebyshev networks. The device notably operates with two of its signal ports at the same frequency and uses only two out-of-phase pumps at a single frequency. As a consequence, when operated as an isolator, it does not require phase coherence between the pumps and the signal, thus simplifying the requirements for its integration into standard dispersive qubit readout setups. The device utilizes parametric couplers based on a balanced bridge of rf-superconducting quantum interference device arrays, which offer purely parametric coupling and high dynamic range. We characterize the device by measuring its full 3 × 3 S-matrix as a function of frequency and the relative phase between the two pumps. We find up to 15 dB nonreciprocity over a 200 MHz signal band, port match better than 10 dB, low insertion loss of 0.6 dB, and saturation power exceeding −80 dBm.

Baseband Control of Superconducting Qubits with Shared Microwave Drives

Accurate control of qubits is the central requirement for building functional quantum processors. For the current superconducting quantum processor, high-fidelity control of qubits is mainly based on independently calibrated microwave pulses, which could differ from each other in frequencies, amplitudes, and phases. With this control strategy, the needed physical resource could be challenging, especially when scaling up to large-scale quantum processors is considered. Inspired by Kane's proposal for spin-based quantum computing, here, we explore theoretically the possibility of baseband flux control of superconducting qubits with only shared and always-on microwave drives. In our strategy, qubits are by default far detuned from the drive during system idle periods, qubit readout and baseband flux-controlled two-qubit gates can thus be realized with minimal impacts from the always-on drive. By contrast, during working periods, qubits are tuned on resonance with the drive and single-qubit gates can be realized. Therefore, universal qubit control can be achieved with only baseband flux pulses and always-on shared microwave drives. We apply this strategy to the qubit architecture where tunable qubits are coupled via a tunable coupler, and the analysis shows that high-fidelity qubit control is possible. Besides, the baseband control strategy needs fewer physical resources, such as control electronics and cooling power in cryogenic systems, than that of microwave control. Of note, the flexibility of baseband flux control could be employed for addressing the nonuniformity issue of superconducting qubits, potentially allowing the realization of multiplexing and cross-bar technologies and thus controlling large numbers of qubits with fewer control lines. We thus expect that baseband control with shared microwave drives can help build large-scale superconducting quantum processors.

Chirality-Induced Spin Selectivity: An Enabling Technology for Quantum Applications.

Molecular spins are promising building blocks of future quantum technologies thanks to the unparalleled flexibility provided by chemistry, which allows the design of complex structures targeted for specific applications. However, their weak interaction with external stimuli makes it difficult to access their state at the single-molecule level, a fundamental tool for their use, for example, in quantum computing and sensing. Here, an innovative solution exploiting the interplay between chirality and magnetism using the chirality-induced spin selectivity effect on electron transfer processes is foreseen. It is envisioned to use a spin-to-charge conversion mechanism that can be realized by connecting a molecular spin qubit to a dyad where an electron donor and an electron acceptor are linked by a chiral bridge. By numerical simulations based on realistic parameters, it is shown that the chirality-induced spin selectivity effect could enable initialization, manipulation, and single-spin readout of molecular qubits and qudits even at relatively high temperatures.

Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation

We report the impact from channel composition on the cryogenic low-noise performance at low dc power for a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor (HEMT). Two indium (In) channel compositions, 65% and 80%, were studied by dc and RF characterization at 300 and 5 K. For the cryogenic low-noise optimization, it was important to increase the transconductance to gate–source capacitance ratio in the weak inversion region implying that a higher maximum cutoff frequency in the HEMT does not guarantee lower noise. The HEMT noise performance was obtained from noise measurements in a hybrid three-stage 4–8-GHz ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{C}$</tex-math> </inline-formula> -band) low-noise amplifier (LNA) down to 300- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula> W dc power dissipation. While the HEMT LNA noise performance for both the channel compositions at 300 K was found to be comparable, the HEMT LNA at 5 K with 65% In channel showed a minimum noise temperature of 1.4 K, whereas the noise temperature in the HEMT LNA with 80% In channel HEMTs increased to 2.4 K. The difference in the noise became more pronounced at reduced dc power dissipation. The ultralow dc power of 300 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula> W demonstrated for a cryogenic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{C}$</tex-math> </inline-formula> -band LNA with an average noise temperature of 2.9 K and 24-dB gain is of interest for future qubit read-out electronics at 4 K.

Trap-Integrated Superconducting Nanowire Single-Photon Detectors with Improved RF Tolerance for Trapped-Ion Qubit State Readout.

State readout of trapped-ion qubits with trap-integrated detectors can address important challenges for scalable quantum computing, but the strong rf electric fields used for trapping can impact detector performance. Here, we report on NbTiN superconducting nanowire single-photon detectors (SNSPDs) employing grounded aluminum mirrors as electrical shielding that are integrated into linear surface-electrode rf ion traps. The shielded SNSPDs can be operated at applied rf trapping potentials of up to 54 Vpeak at 70 MHz and temperatures of up to 6 K, with a maximum system detection efficiency of 68 %. This performance should be sufficient to enable parallel high-fidelity state readout of a wide range of trapped ion species in typical cryogenic apparatus.

Compact Superconducting Microwave Resonators Based on Al-AlOx -Al Capacitors

We address the scaling-up problem for superconducting quantum circuits by using lumped-element resonators based on an alternative fabrication method of aluminum-aluminum oxide-aluminum (Al-${\mathrm{AlO}}_{x}$-Al) parallel-plate capacitors. The size of the resonators is only $0.04\phantom{\rule{0.2em}{0ex}}{\mathrm{mm}}^{2}$, which is more than one order smaller than the typical size of coplanar resonators ($1\phantom{\rule{0.2em}{0ex}}{\mathrm{mm}}^{2}$). The fabrication method we develop easily fits into the standard superconducting qubit fabrication process. We obtain capacitance per area $14\phantom{\rule{0.2em}{0ex}}\mathrm{fF}/\text{\ensuremath{\mu}}{\mathrm{m}}^{2}$ and the internal quality factor $1\ifmmode\times\else\texttimes\fi{}{10}^{3}$--$8\ifmmode\times\else\texttimes\fi{}{10}^{3}$ at the single-photon level. Our results show that such devices based on Al-${\mathrm{AlO}}_{x}$-Al capacitors could be further applied to the qubit readout scheme, including resonators, filters, amplifiers, as well as microwave metamaterials and innovative types of qubits, such as $0\ensuremath{-}\ensuremath{\pi}$ qubit.

Reminiscence of Classical Chaos in Driven Transmons

Transmon qubits are ubiquitously used in superconducting quantum information processor architectures. Strong drives are required to realize fast, high-fidelity, gates and measurements, including parametrically activated processes. Here, we show that even off-resonant drives, in regimes routinely used in experiments, can cause strong modifications to the structure of the transmon spectrum rendering a large part of it chaotic. Accounting for the full nonlinear dynamics of the transmon in a Floquet-Markov formalism, we find that these chaotic states, often neglected through the hypothesis that the anharmonicity is weak, strongly impact the lifetime of the transmon’s computational states. In particular, we observe that chaos-assisted quantum phase slips greatly enhance band dispersions. In the presence of a measurement resonator, we find that approaching chaotic behavior correlates with strong transmon-resonator hybridization, and an average resonator response centered on the bare resonator frequency. These results lead to a photon-number threshold characterizing the appearance of chaos-induced quantum demolition effects during strong-drive operations, such as dispersive qubit readout. The phenomena described here are expected to be present in all circuits based on low-impedance Josephson junctions.13 MoreReceived 9 November 2022Accepted 21 March 2023DOI:https://doi.org/10.1103/PRXQuantum.4.020312Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasQuantum chaosPhysical SystemsSuperconducting qubitsQuantum InformationNonlinear DynamicsCondensed Matter, Materials & Applied Physics

Transmon qubit readout fidelity at the threshold for quantum error correction without a quantum-limited amplifier

High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that reduces the contribution of decay error during readout, and a two-tone excitation of the readout resonator to distinguish among qubit populations in higher energy levels. Using a machine-learning algorithm to post-process the two-tone measurement results further improves the qubit-state assignment fidelity. We perform single-shot frequency-multiplexed qubit readout, with a 140 ns readout time, and demonstrate 99.5% assignment fidelity for two-state readout and 96.9% for three-state readout–without using a quantum-limited amplifier.

Critical parametric quantum sensing

Critical quantum systems are a promising resource for quantum metrology applications, due to the diverging susceptibility developed in proximity of phase transitions. Here, we assess the metrological power of parametric Kerr resonators undergoing driven-dissipative phase transitions. We fully characterize the quantum Fisher information for frequency estimation, and the Helstrom bound for frequency discrimination. By going beyond the asymptotic regime, we show that the Heisenberg precision can be achieved with experimentally reachable parameters. We design protocols that exploit the critical behavior of nonlinear resonators to enhance the precision of quantum magnetometers and the fidelity of superconducting qubit readout.

Parallel tomography of quantum non-demolition measurements in multi-qubit devices

An efficient characterization of QND measurements is an important ingredient toward certifying and improving the performance and scalability of quantum processors. In this work, we introduce a parallel tomography of QND measurements that addresses single- and two-qubit readout on a multi-qubit quantum processor. We provide an experimental demonstration of the tomographic protocol on a 7-qubit IBM-Q device, characterizing the quality of conventional qubit readout as well as generalized measurements such as parity or measurement-and-reset schemes. Our protocol reconstructs the Choi matrices of the measurement processes, extracts relevant quantifiers—fidelity, QNDness, destructiveness—and identifies sources of errors that limit the performance of the device for repeated QND measurements. We also show how to quantify measurement crosstalk and use it to certify the quality of simultaneous readout on multiple qubits.

Mixed-mode RF reflectometry of quantum dots for reduction of crosstalk effects

RF reflectometry is a promising technique for spin qubit readout, suitable for large-scale integrated qubit systems by combination with multiplexing techniques and gate-based readout. However, one of the challenges in such systems would be that the accuracy of RF readout of individual qubits can be degraded by crosstalk among dense RF readout lines. In this study, we propose a mixed-mode RF reflectometry to reduce the effect of the crosstalk and verify its effectiveness by electromagnetic field simulations. The results of the simulations show the possibility of suppressing the influence of crosstalk by using mixed modes.

Evaluation of a physically defined silicon quantum dot for design of matching circuit for RF reflectometry charge sensing

This paper reports on the extraction of the equivalent circuit model parameters of a physically defined silicon quantum dot at a cryogenic temperature and design of the impedance matching circuits to improve the performance of a charge sensor for radio-frequency (RF) reflectometry. The I-V characteristics and the S-parameters of the quantum dot device are measured around a Coulomb peak at 4.2 K. The measured results are modeled by an RC parallel circuit, and the model parameters for the quantum dot device were obtained. We consider three impedance matching circuits for RF reflectometry of a quantum dot: shunt capacitor-series inductor type, shunt inductor-series capacitor type, and shunt inductor-series inductor-type. We formulate and compare the sensitivity and bandwidth of RF reflectometry for the three types of circuits. The analysis should be useful for selecting the optimal matching circuit and the circuit parameters for given equivalent circuit parameters and working frequency. This procedure is demonstrated for a quantum dot with the characterized model circuit along with simulated performance. This design technique of matching circuit for RF reflectometry can be applied to any device that can be represented by an RC parallel circuit. These results will facilitate to realize fast semiconductor qubit readout in various quantum dot platforms.

Single-Shot Readout of Multiple Donor Electron Spins with a Gate-Based Sensor

Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimizing the footprint of the sensors, and extending the range of each sensor to read more qubits. Here we show high-fidelity single-shot electron spin readout using a nanoscale single-lead quantum dot (SLQD) sensor that is both compact and capable of reading multiple qubits. Our gate-based SLQD sensor is deployed in an all-epitaxial silicon donor spin-qubit device, and we demonstrate single-shot readout of three 31P donor quantum dot electron spins with a maximum fidelity of 95%. Importantly, in our device the quantum dot confinement potentials are provided inherently by the donors, removing the need for additional metallic confinement gates and resulting in strong capacitive interactions between sensor and donor quantum dots. Our results are consistent with a 1/d1.4 scaling of the capacitive coupling between sensor and 31P dots (where d is the sensor-dot distance), compared to 1/d2.5−3.0 in gate-defined quantum dot devices. Due to the small qubit size and strong capacitive interactions in all-epitaxial donor devices, we estimate a single sensor can achieve single-shot readout of approximately 15 qubits in a linear array, compared to 3–4 qubits for a similar sensor in a gate-defined quantum dot device. Our results highlight the potential for spin-qubit devices with significantly reduced sensor densities.Received 19 October 2021Revised 19 August 2022Accepted 4 January 2023DOI:https://doi.org/10.1103/PRXQuantum.4.010319Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasQuantum computationQuantum information with solid state qubitsQuantum metrologyQuantum Information