Quaternary Sulfides Research Articles

Solvothermal syntheses, characterizations and semiconducting properties of four quaternary thioargentates Ba2AgInS4, Ba3Ag2Sn2S8, BaAg2MS4 (M = Sn, Ge)

Four quaternary silver sulfides, Ba2AgInS4 (1), Ba3Ag2Sn2S8 (2), BaAg2MS4 (M = Sn for 3; Ge for 4) have been synthesized solvothermally in the presence of excess sulfur as mineralizer. Compound 1 features a 2-D [AgInS4]4−∞2 layer structure composed of AgS4/InS4 tetrahedra, in which the two metals randomly occupy one crystallographic unique position with the molar ratio of 1:1. Compound 2 possesses a 3-D [Ag2Sn2S8]6- framework which constructed by alternative arrangements between AgS4 and SnS4tetrahedra by sharing vertexes. The structures of compounds 3 and 4 are similar and exhibit 3-D anionic [Ag2MS4]2- (M = Sn for 3; Ge for 4) framework composed of AgS2 layers and monomeric MS4 (M = Sn, Ge) tetrahedra that pillar the above layers. Moreover, semiconducting properties (optical bandgap, photoelectric response) of the title compounds were also investigated. The results indicate that all the quaternary sulfides are narrow-gap semiconductors, and compound 3 exhibits excellent photocurrent responsive property.

Synthesis, Crystal Structure, and Optical Property of Ce4InSbS9

Quaternary sulfide Ce4InSbS9 is prepared at 1223 K in an evacuated silica tube. It crystallizes in the chiral tetragonal space group P41212 (No. 92) with a = 10.1961(3) A, c = 28.128(2) A, V = 2924.2(2) A3, Dcalc = 4.932 g/cm3, and Z = 8. The structure features infinite 21 helical chains [In2Sb2S 11 10− ]∞ propagating along the c direction separated by Ce3+ cations and S2− anions. The UV/Vis diffuse reflectance spectroscopy study shows that the optical gap of Ce4InSbS9 is about 2.07 eV, showing a red shift with respect to corresponding sulfide La4InSbS9, which is attributed to the allowed electronic transfer from the narrow Ce4f level to the conduction band, mainly built from empty Ce5d orbitals. The magnetic susceptibility measurement indicates antiferromagnetic interactions between Ce3+ cations.

Hydrogen bubble template fabricated nano-architecture quaternary dendritic sulfide as cathode and electro-etched carbon fiber paper as anode electrode for total novel binder-free asymmetric supercapacitors

A novel electrode consisting of 3D porous nickel‒cobalt‒copper sulfide dendritic structures is synthesized, in which, for the first time ternary Ni–Co–Cu foam is constructed through hydrogen bubble template and followed by sulfidization via a hydrothermal reaction in thiourea. The 3D, porous Ni–Co–Cu dendritic sulfide electrode exhibits a high specific capacitance of 1203.75 F g−1 (0.963 F cm−2) at current of 1.0 mA and excellent cycling stability, excellent ratability along with high cycle stability. An asymmetric supercapacitor (ASC) using dendritic sulfide structures and reduced electro-etched carbon fiber paper (RECF) as the positive and negative electrodes, respectively is developed. RECF is prepared through electrochemical oxidation process in acidic solution followed by electrochemical reduction, which exhibits a high areal capacitance of 695 mF cm−2 at current of 1.0 mA. The assembled device can be operating reversibly between 0 and 1.6 V and provides high specific capacitance of 178.5 mF cm−2 and an excellent cycling stability of 97.3% after 1000 cycles. This work exploits a pathway to construction of dendritic sulfides of quaternary metal foams that could be used for any flat metal substrate and open a new doorway to quaternary transition metal sulfides electrode materials in energy storage and conversion devices.

Synthesis, crystal structure and physical properties of kiddcreekite Cu6WSnS8 and its congener Cu6WSnSe8

We for the first time synthesized a rare quaternary sulfide mineral kiddcreekite Cu6WSnS8 and its congener Cu6WSnSe8 in the lab, and studied their crystal structures and physical properties. They have the same cubic crystal structure (space group F-43m) with lattice parameters 10.8299(7) and 11.2785(9) Å, respectively. In the unit cell, Cu, W and Sn occupy the 24f, 4a and 4c Wyckoff positions, respectively, while S or Se atoms occupy two sets of 16e Wyckoff positions. The electrical resistivity measurements reveal that both samples show metallic behaviour at high temperature and undergo metal-insulator transitions around 30 K. Both compounds exhibit diamagnetism at room temperature and Curie-Weiss paramagnetism at low temperature. The magnetic susceptibility analysis indicates that the effective magnetic moments in Cu6WSnS8 and Cu6WSnSe8 are most likely due to the contribution of a small amount of Cu2+ ions. The Cu2+ ions introduce hole carriers into the samples, which makes them show metallicity above 30 K. The Debye temperatures (ΘD) of Cu6WSnS8 and Cu6WSnSe8 are respectively 206.6 and 191.2 K, determined from the low-temperature specific heat measurements. On the basis of the experimental results, we conclude that both compounds belong to diamagnetic metals.

Quaternary rare-earth sulfides RE3M0.5M′S7 (M = Zn, Cd; M′ = Si, Ge)

The four series of quaternary sulfides RE3Zn0.5SiS7 (RE = La–Nd, Sm, Gd–Er), RE3Zn0.5GeS7 (RE = La–Nd, Sm, Gd–Er), RE3Cd0.5SiS7 (RE = La–Nd, Sm, Gd–Ho), and RE3Cd0.5GeS7 (RE = La–Nd, Sm, Gd, Tb) were prepared by reactions of the elements at 1050 °C. Analysis of their powder X-ray diffraction patterns indicates that they adopt the noncentrosymmetric hexagonal La3Mn0.5SiS7-type structure (space group P63, Z = 2). The structures of two Cd-containing members were refined from single-crystal X-ray diffraction data (Gd3Cd0.5SiS7, a = 9.9737(8) Å, c = 5.6287(4) Å; Gd3Cd0.5GeS7, a = 9.9739(3) Å, c = 5.7296(4) Å). La3Zn0.5GeS7 melts incongruently above 1300 °C. Ce3Zn0.5GeS7 shows simple paramagnetic behaviour arising from non-interacting Ce3+ species. Optical band gaps of 2.7 eV for La3Cd0.5SiS7, 2.3 eV for La3Cd0.5GeS7, and 1.8 eV for Ce3Zn0.5GeS7 were measured. Band structure calculations on La3Cd0.5SiS7 and La3Cd0.5GeS7 confirm the presence of band gaps whose magnitude is controlled by Si–S or Ge–S bonding interactions.

A theoretical and experimental study of the valence-band electronic structure and optical constants of quaternary copper mercury tin sulfide, Cu2HgSnS4, a potential material for optoelectronics and solar cells

Experimental and theoretical studies on the electronic-band structure and optical constants are made for the first time for quaternary copper mercury tin sulfide, Cu2HgSnS4. The present X-ray photoelectron spectroscopy studies reveal low hygroscopicity of Cu2HgSnS4 alloy surface and its sensitivity to 3 keV Ar+-ion irradiation that decreases substantially the content of mercury atoms in topmost analyzing layers. Performed within density functional theory (DFT) the present band-structure calculations show that the best coincidence with the experiment is derived when the computational procedure is made employing for exchange correlation potential modified Becke-Johnson functional and also including Hubbard parameter U and spin-orbit coupling. The present DFT calculations indicate that S 3p states are the main contributors to the broad region of the valence band of Cu2HgSnS4 (in the central and upper portions of the band), while in its lower part contributions of Hg 6s and Sn 5s states prevail and Hg 5d states dominate at its bottom. A conduction band bottom is formed due to contributions of unoccupied Sn 5s states with also substantial input of unoccupied S 3p and Hg 6s states too. The DFT calculations allow for concluding that the Cu2HgSnS4 compound is a direct bandgap semiconductor with valence band maximum and conduction band minimum positioned at Г point. The calculations indicate that Cu2HgSnS4 is a very prospective material for application in optoelectronic devices and absorber layers of thin films solar cells.

A review on growth optimization of spray pyrolyzed Cu 2 ZnSnS 4 chalcogenide absorber thin film

The progress of solar cell technology in the development of clean and economic quaternary compound copper zinc tin sulfide (CZTS)-based absorber thin films using the spray pyrolysis technique are presented in this review. CZTS (Cu2ZnSnS4) is the only potential competitor for the existing solar thin film absorbing materials owing to its environment-friendly Earth abundant constituents. Even though different nonvacuum thin film technologies have been developed for the large area fabrication of this nontoxic absorber material, spray pyrolysis technique offers more versatility in changing the process parameters which has a direct impact on the cell efficiency. It can be used for depositing a wide variety of materials even with complex composition with good crystallinity, and the method has the advantage of being flexible and straightforward to design and can be quickly adopted for extensive area deposition. A survey on the effects of experimental conditions as well as the nature of precursors on the structural, morphological, electrical, and optical properties on the spray pyrolyzed CZTS thin films is discussed in detail. This analysis certainly could provide a potential to obtain new insights in the fabrication of high-efficiency CZTS-based solar cells and to launch it into the commercial market to satisfy the ever-growing future energy demand.

Modelling of novel-structured copper barium tin sulphide thin film solar cells

In this work, a novel structured Cu\(_{2}\)BaSnS\(_{4}\) (\(\hbox {CBTS})/\hbox {ZnS}/\hbox {Zn}({\hbox {O},\hbox {S}})\) photovoltaic device is proposed. A nontoxic, earth-abundant and auspicious quaternary semiconductor compound copper barium tin sulphide \(\left( {\hbox {Cu}_2 \hbox {BaSnS}_4 } \right) \) is used as an absorber layer. We propose a novel \(\hbox {Zn}({\hbox {O},\hbox {S}})\) buffer layer for a high-power conversion efficiency (PCE) of \(\hbox {CBTS}\)-based thin film photovoltaic cells. Solar cell capacitance simulator software is used for device modelling and simulations are performed under a 1.5 AM illumination spectrum. The proposed device is investigated by means of numerical modelling and optimized the parameters to maximize its efficiency. Promising optimized functional parameters had been achieved from the proposed structure with back surface field layer with a PCE of 18.18%, a fill factor of 83.45%, a short-circuit current of 16.13 \(\hbox {mA}\,\hbox {cm}^{-2}\) and an open-circuit voltage of 1.3 V. The promising results give an imperative standard for possible manufacturing of high efficiency, eco-friendly inorganic \(\hbox {CBTS}\)-based photovoltaic cells.

Na/Zn/Sn/S (NaZTS): Quaternary metal sulfide nanosheets for efficient adsorption of radioactive strontium ions

Metal sulfides are promising materials because their ability to capture radioactive nuclides from wastewater is superior to many others. Herein, Na/Zn/Sn/S (NaZTS) quaternary metal sulfide nanosheets were fabricated using a one-pot hydrothermal method. A series of characterizations revealed that these nanosheets had a structure identical to Na5Zn3.5Sn3.5S13·6H2O, consisting of [Zn3.5Sn3.5S13]5− frameworks and Na+ ions located at the center and corner of the open channels. Because of the S2− ligands in its structure, NaZTS was a soft Lewis base and showed high affinity toward Sr2+ ions. NaZTS was employed to remove Sr2+ from aqueous solutions and exhibited ultrafast kinetics (an equilibrium time of 5 min), a broad active pH range (a removal rate of >98.4% at pH 3–12), and a very low Sr2+ desorption rate of <0.04%. Its maximum adsorption capacity according to the Langmuir model was 40.4 mg g−1 at 318 K. The effects of adsorbent dosage and coexisting ions on Sr2+ adsorption were also discussed. Macroscopic adsorption experiments and microscopic X-ray photoelectron spectroscopy were used to study the adsorption mechanism, and the outstanding ability of NaZTS to capture Sr2+ ions could be attributed to ion exchange and strong Sr⋯S bonding. This work highlights the excellent adsorption of Sr2+ by NaZTS, which makes it a promising material for removing radioactive Sr2+ in cleanups of radioactive pollution.

Calculations within DFT framework of the electronic and optical properties of quaternary sulfide Tl2PbSiS4, a prospective optoelectronic semiconductor

We report results of computation within framework of density functional theory (DFT) of the electronic band-structure of quaternary thallium lead silicon sulfide, Tl2PbSiS4. Especially, we employ different approaches for exchange correlation (XC) potential to find the best fit of the theoretical total density of states (TDOS) curve to the experimental valence band (VB) spectrum as elucidated employing the method of X-ray photoelectron spectroscopy (XPS). The present findings indicate that the best fit of the experimental and theoretical data regarding the shape of the VB XPS spectrum and TDOS is derived when employing in the computation procedure for XC potential the modified Becke-Johnson (MBJ) approach, which includes also spin-orbit (SO) effect and Hubbard parameter U for strongly correlated electrons of d symmetry (MBJ + U + SO technique). Based on these findings, we have performed computation of the electronic band-structure and primary optical constants of Tl2PbSiS4. The MBJ + U + SO calculations present that the main contributors at the top of the VB in this quaternary sulfide are S 3p states, the central portion is prevailed by the input of S 3p and Si 3p states, while the bottom is determined by contributions of the electronic states of s symmetry associated with lead and silicon.

Electronic and optical properties of quaternary sulfide Tl2HgSnS4, a promising optoelectronic semiconductor: A combined experimental and theoretical study

Data on coupled experimental and theoretical studies of the electronic structure and optical properties of quaternary thallium mercury tin sulfide, Tl2HgSnS4, a perspective semiconductor for application in optoelectronics, are presented in the present work. In particular, for a Tl2HgSnS4 crystal grown by Bridgman-Stockbarger technique, we have measured X-ray photoelectron (XP) core-level and valence band (VB) spectra for as-synthesized and treated with 3 keV Ar+ ions surfaces. The XP measurements reveal a substantial sensitivity of the Tl2HgSnS4 crystal surface regarding treatment with Ar+ ions: such surface treatment leads to almost complete eliminating the mercury content in topmost surface layers being analyzed. Furthermore, based on computing techniques within density functional theory (DFT) framework, we have calculated the electronic band-structure of Tl2HgSnS4 through modified Becke-Johnson (mBJ) approach for exchange correlation potential involving also in computation procedure spin-orbit (SO) coupling and Hubbard parameter U (mBJ–USO technique). The present mBJ–USO calculations reveal an excellent fit of the theoretical curve of total density of states and the experimental XP VB spectrum of the Tl2HgSnS4 compound. The DFT calculations indicate that the upper portion of the XP VB spectrum of Tl2HgSnS4 is mainly due to contributions of S 3p states, the central part is formed by S 3p and Sn 5p states, the lower portion is determined from contributions of Sn 5s states, with slightly smaller input of 6s states associated with Tl and Hg atoms, while at the bottom the principal contributions come from Hg 5d5/2 and Hg 5d3/2 states. The optical absorption edge was measured for the Tl2HgSnS4 crystal and the main optical constants were calculated within mBJ–USO technique.

Anchored NiCoMnS4 nanoparticles on N-doped rGO: High-performance bifunctional electrocatalysts for rechargeable Zn-Air batteries

The vast commercialization of advanced energy storage/conversion technologies like rechargeable metal–air batteries and regenerative fuel cells is greatly tied to the development of efficient catalysts capable of proceeding the pertinent electrochemical processes like oxygen reduction reaction (ORR) and oxygen evolution reaction (OER). Hence, exploiting an ideal bifunctional catalyst, e.g. the one includes dual active sites for both reactions, is of high interest and importance. Herein, a novel nonprecious-metal bifunctional catalyst based on a quaternary mixed metal sulfide synergized with nitrogen-doped reduced graphene oxide (NiCoMnS4/N-rGO) is synthesized through a simple anion-exchange route. The unique composition and synergism arising from uniformly anchoring the metal sulfide nanoparticles on N-rGO endow the as-prepared catalyst with remarkable electrocatalytic activity and durability towards ORR and OER. Importantly, the excellent electrocatalytic performance of NiCoMnS4/N-rGO hybrid was demonstrated in rechargeable Zn-air batteries (ZABs) as a real application. Accordingly, rechargeable ZABs assembled by NiCoMnS4/N-rGO hybrid-based air cathodes exhibit high capacity, energy density and excellent rate capability as well as favorable cycling stability. The outstanding performance of this NiCoMnS4/N-rGO hybrid together with the simplicity of synthetic method, make this hybrid promising as a highly efficient air-cathode catalyst for energy-related applications including high-performance rechargeable ZABs.

Synthesis, crystal structure, and optical property of Ce4InSbS9

Quaternary sulfide Ce4InSbS9 is prepared at 1223 K in an evacuated silica tube. It crystallizes in the chiral tetragonal space group P41212 (No. 92) with a = 10.1961(3) Å, c = 28.128(2) Å, V = 2924.2(2) Å3, Dcalc = 4.932 g/cm3, and Z = 8. The structure features infinite 21 helical chains [In2Sb2S1110–]∞ propagating along the c direction separated by Ce3+ cations and S2– anions. The UV/Vis diffuse reflectance spectroscopy study shows that the optical gap of Ce4InSbS9 is about 2.07 eV, showing a red shift with respect to corresponding sulfide La4InSbS9, which is attributed to the allowed electronic transfer from the narrow Ce4f level to the conduction band, mainly built from empty Ce5d orbitals. The magnetic susceptibility measurement indicates antiferromagnetic interactions between Ce3+ cations.

Thermoelectric Material SnPb2Bi2S6: The 4,4L Member of Lillianite Homologous Series with Low Lattice Thermal Conductivity.

Although the binary sulfides Bi2S3, PbS, and SnS have attracted extensive interest as thermoelectric materials, no quaternary sulfides containing Sn/Pb/Bi/S elements have been reported. Herein, we report the synthesis of a new quaternary sulfide, SnPb2Bi2S6, which crystallizes in the orthorhombic space group Pnma with unit cell parameters of a = 20.5458(12) Å, b = 4.0925(4) Å, c = 13.3219(10) Å. SnPb2Bi2S6 has a lillianite-type crystal structure consisting of two alternately aligned NaCl-type structural motifs separated by a mirror plane of PbS7 monocapped trigonal prisms. In the lillianite homologous series, SnPb2Bi2S6 can be classified as 4,4L, where the superscripted numbers indicate the maximum numbers of edge-sharing octahedra in the two adjacent NaCl-shaped slabs along the diagonal direction. The obtained SnPb2Bi2S6 phase exhibited good thermal stability up to 1000 K and n-type degenerate semiconducting behavior, with a power factor of 3.7 μW cm-1 K-2 at 773 K. Notably, this compound exhibited a very low lattice thermal conductivity of 0.69-0.92 W m-1 K-1 at 300-1000 K. Theoretical calculations revealed that the low thermal conductivity is caused by the complex crystal structure and the related elastic properties of a low Debye temperature, low phonon velocity, and large Grüneisen parameters. A reasonable figure of merit (ZT) of ∼0.3 was obtained at 770 K.

Synthesis, Crystal Structure, and Liquid Exfoliation of Layered Lanthanide Sulfides KLn2CuS6 (Ln = La, Ce, Pr, Nd, Sm).

Among the great amount of known lanthanide nanoparticles, reports devoted to chalcogenide ones are deficient. The properties of such nanoparticles remain almost unknown due to the lack of simple and proper synthetic methods avoiding hydrolysis and allowing preparation of oxygen-free lanthanide nanoparticles. A liquid exfoliation method was used to select the optimum strategy for the preparation of quaternary lanthanide sulfide nanoparticles. Bulk KLn2CuS6 (Ln = La-Sm) materials were obtained via a reactive flux method. The crystal structures of three new members of the KLn2CuS6 series were determined for Pr, Nd, and Sm as well as for known KLa2CuS6. KLn2CuS6 (Ln = La, Pr, Nd) compounds crystallize in the monoclinic C2 /c space group, whereas KSm2CuS6 crystallizes in the orthorhombic Fddd space group. The analysis of their electronic structures confirms that the main bonding interactions occur within the anionic {Ln2CuS6}- layers. Due to their layered structure, exfoliation of these compounds is possible using ultrasonic treatment in appropriate solvents with the formation of colloidal solutions. Colloidal particles show a plate-like morphology with a lateral size of 100-200 nm and a thickness of 2-10 nm. Highly negative or positive charges found in isopropanol and acetonitrile dispersions, respectively, are associated with high stability and concentration of the dispersions.

High refractive index dispersion of compositionally optimized Ge-Ga-Sb-S sulfide glass for use as molded lens in the long-wavelength infrared range

In an effort to endow Ge-Sb-S sulfide glass with capability to transmit the long-wavelength infrared (LWIR) photons as well as to possess highly dispersive refractive indexes over the LWIR spectral range, we have compositionally adjusted ternary Ge-Sb-S glass prior to tuning quaternary Ge-X-Sb-S (X = Ga, Bi, In or Sn) glass. Among the constituent atoms of ternary Ge-Sb-S glass, Ge content turned out to exert the strongest influence not only on thermal and mechanical properties but also on infrared transmission edge. Specifically, glass transition temperature and Vickers hardness tended to be directly proportional to Ge content, but infrared transmission edge was blue-shifted upon increase of Ge content, simultaneously producing an additional multiphonon absorption peak at ~ 9 µm. As such, Ge-Sb-S glass containing Ge atoms less than ~ 15 at% was considered to feature applicability in LWIR range, which on the other hand suffers from relatively poor thermal and mechanical properties. In our experimental attempts on quaternary sulfide glasses performed to mitigate such deteriorations, presence of relatively small amount of Ga appeared to be most effective among the elements employed in this study as the fourth constituent. Moreover, only Ga atoms improved thermal stability with significantly increasing crystallization temperature. Quaternary Ge-Ga-Sb-S glass compositionally optimized in this study was then verified to be much more dispersive than typical Se-based chalcogenide glasses in the LWIR region.

Crystal Structure and Optical Property of Quaternary Sulfide Ba2.77SnSb2.16S8

Quaternary sulfide Ba2.77SnSb2.16S8 is prepared from stoichiometric mixtures of Ba, Sn, Sb, and S at 1223 K in an evacuated silica tube. Ba2.77SnSb2.16S8 crystallizes in the orthorhombic Pnma space group with a = 11.7125(18) A, b = 4.3870(9) A, c = 29.778(5) A, V = 1530.1(5) A3, Dcalc = 4.418 g/cm3 and Z = 4. This structure contains triple chains of distorted SbS5 square pyramids, which are interconnected via edge-sharing to form one-dimensional (1D) ribbons along the [010] direction. These ribbons are parallel to the chains of SnS4 tetrahedra separated by Ba2+ cations. The optical gap of 1.50 eV for Ba2.77SnSb2.16S8 is deduced from UV/Vis reflectance spectroscopy.

Quaternary sulfide Ba5Cd2Ga2S10 containing chains of edge- and corner-sharing tetrahedra

The quaternary sulfide Ba5Cd2Ga2S10 was prepared by reaction of BaS, CdS, and Ga2S3 at high temperatures. Single-crystal X-ray diffraction analysis revealed that it adopts a new orthorhombic structure type (space group Pccn, Z = 4, a = 12.7664(7) Å, b = 12.8060(7) Å, c = 12.1265(7) Å) consisting of one-dimensional anionic chains [CdGaS5]5– built from edge- and corner-sharing tetrahedra centred by Cd and Ga atoms in an ordered fashion, with Ba2+ cations located between the chains. The UV–vis–NIR diffuse reflectance spectrum reveals two optical transitions at 1.92(2) and 3.29(2) eV, the latter being consistent with the yellow colour of the crystals.

Magnetic and 151Eu Mössbauer spectroscopic studies on rare earth bismuth sulfides, EuLnBiS4 (Ln = Eu, Gd)

Ternary and quaternary rare earth bismuth sulfides EuLnBiS4 (Ln = Eu, Gd) have been investigated by X-ray diffraction, 151Eu Mössbauer spectroscopy, and magnetic susceptibility measurements. Both compounds have the orthorhombic CaFe2O4-type structure with space group Pnma. In Eu2BiS4, Eu2+ and Eu3+ ions occupy two crystallographically independent sites. The 151Eu Mössbauer spectra for Eu2BiS4 indicate that the Eu2+ and Eu3+ ions exist in the molar ratio of 1:1, and the Debye temperatures of Eu2+ and Eu3+ are 175 and 230 K, respectively. Magnetic susceptibility measurements for Eu2BiS4 and EuGdBiS4 reveal that an antiferromagnetic transition occurs at 2.8 and 6.5 K, respectively.

Synthesis and Physicochemical Properties of a Lanthanum-Containing Analog of the Mineral Berthierite FeSb2S4

Phase equilibria in the FeSb2S4–FeLa2S4 system were studied by physicochemical analysis methods (differential thermal, X-ray powder diffraction, and microstructural analyses and microhardness and density measurements), and the phase diagram of the system was constructed. The formation of quaternary sulfide FeLaSbS4 melting congruently at 1230 K, an analog of the mineral berthierite FeSb2S4, was detected. The X-ray powder diffraction analysis showed that FeLaSbS4 belongs to the berthierite structural type and crystallizes in the orthorhombic system with the unit cell parameters a = 11.424 A, b = 14.160 A, c = 3.782 A, Z = 4, and space group Pbam.