Quantum Transport Regime Research Articles

Quantum transport regimes in quartic dispersion materials with Anderson disorder

Mexican-hat-shaped quartic dispersion manifests itself in certain families of single-layer two-dimensional hexagonal crystals such as compounds of groups III–VI and groups IV–V as well as elemental crystals of group V. A quartic band forms the valence band edge in various of these structures, and some of the experimentally confirmed structures are GaS, GaSe, InSe, SnSb, and blue phosphorene. Here, we numerically investigate strictly one-dimensional and quasi-one dimensional (Q1D) systems with quartic dispersion and systematically study the effects of Anderson disorder on their transport properties with the help of a minimal tight-binding model and Landauer formalism. We compare the analytical expression for the scaling function with simulation data to distinguish the domains of diffusion and localization regimes. In one dimension, it is shown that conductance drops dramatically at the quartic band edge compared to the quadratic case. As for the Q1D nanoribbons, a set of singularities emerge close to the band edge, suppressing conductance and leading to short mean-free-paths and localization lengths. Interestingly, wider nanoribbons can have shorter mean-free-paths because of denser singularities. However, the localization lengths sometimes follow different trends. Our results display the peculiar effects of quartic dispersion on transport in disordered systems.

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

Joining Landauer approach and classical multi electronic master-equation description in nanoscale transport for non-interactive systems

In this work we show that in the non-interacting limit, i.e., when the electronic structure of the N-particle states is frozen, in the wide-band limit (WBL) approximation, the classical master equation (CME) with the electron transfer rates obtained via Fermi golden rule and the elastic scattering approach (ES) are equivalent. This fact is encouraging, since it allows the insertion of elastic mechanisms into quantum transport via the CME approach thus, describing weak and strong quantum transport regimes on an equal footing within this theory.

Quantum Oscillations in Graphene Using Surface Acoustic Wave Resonators.

Surface acoustic waves (SAWs) provide a contactless method for measuring wave-vector-dependent conductivity. This technique has been used to discover emergent length scales in the fractional quantum Hall regime of traditional, semiconductor-based heterostructures. SAWs would appear to be an ideal match for van der Waals heterostructures, but the right combination of substrate and experimental geometry to allow access to the quantum transport regime has not yet been found. We demonstrate that SAW resonant cavities fabricated on LiNbO_{3} substrates can be used to access the quantum Hall regime of high-mobility, hexagonal boron nitride encapsulated, graphene heterostructures. Our work establishes SAW resonant cavities as a viable platform for performing contactless conductivity measurements in the quantum transport regime of van der Waals materials.

Disorder-Enhanced and Disorder-Independent Transport with Long-Range Hopping: Application to Molecular Chains in Optical Cavities.

Overcoming the detrimental effect of disorder at the nanoscale is very hard since disorder induces localization and an exponential suppression of transport efficiency. Here we unveil novel and robust quantum transport regimes achievable in nanosystems by exploiting long-range hopping. We demonstrate that in a 1D disordered nanostructure in the presence of long-range hopping, transport efficiency, after decreasing exponentially with disorder at first, is then enhanced by disorder [disorder-enhanced transport (DET) regime] until, counterintuitively, it reaches a disorder-independent transport (DIT) regime, persisting over several orders of disorder magnitude in realistic systems. To enlighten the relevance of our results, we demonstrate that an ensemble of emitters in a cavity can be described by an effective long-range Hamiltonian. The specific case of a disordered molecular wire placed in an optical cavity is discussed, showing that the DIT and DET regimes can be reached with state-of-the-art experimental setups.

Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap.

Various intriguing quantum transport measurements for carbon nanotubes (CNTs) based on their unique electronic band structures have been performed adopting a field-effect transistor (FET), where the contact resistance represents the interaction between the one-dimensional and three-dimensional systems. Recently, van der Waals (vdW) gap tunneling spectroscopy for single-walled CNTs with indium–metal contacts was performed adopting an FET device, providing the direct assignment of the subband location in terms of the current–voltage characteristic. Here, we extend the vdW gap tunneling spectroscopy to multi-walled CNTs, which provides transport spectroscopy in a tunneling regime of ~1 eV, directly reflecting the electronic density of states. This new quantum transport regime may allow the development of novel quantum devices by selective electron (or hole) injection to specific subbands.

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant-tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant-tunneling devices.

Spin-resolved electron transport in nanoscale heterojunctions. Theory and applications

The work represents the extended theoretical model of the electrical conductance in nanoscale magnetic point-like contacts. The developed approach describes diffusive, quasi-ballistic, ballistic and quantum regimes of the spin-resolved conductance that is important for further development of the contact Andreev reflection spectroscopy, heterojunction models, scanning tunnel microscopy techniques. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to purely quantum transport regimes without residual terms. The model of the point contact assumes that the contact area can be replaced by a complicated object (i.e. the tunnel barrier or complicated one with nanoparticles, narrow domain wall, etc.), where the potential energy profile determines its electrical properties. The model can be easily adapted to particular contact materials, its physical properties and species of the contact area.

Electric-field assisted optimal quantum transport of photo-excitations in polar heterostructures

Transition-metal-oxide (TMO) heterostructures are promising candidates for building photon-harvesting devices which can exploit optimal quantum transport of charge excitations generated by light absorption. Here we address the explicit role of an electric field on the quantum transport properties of photo-excitations subject to dephasing in one-dimensional chains coupled to a continuum of states acting as a sink. We show that the average transfer time to the sink is optimized for suitable values of both the coupling strength to the sink and the electric field, thus fully exploiting the coherence-enhanced efficiency in the quantum transport regime achievable in few monolayers TMO heterostructures. The optimal coupling to the continuum remains approximately the same as that in absence of electric field and is characterizing the Superradiant Transition. On the other hand, the optimal electric field for which we provide estimates using an analytical expression is dependent on the initial state.

Strain engineering of valley polarized currents in topological crystalline insulators

Although the existence of four valley degrees of freedom in the (0 0 1) surface of IV–VI semiconductor topological crystalline insulators (TCIs) provides the opportunity to multiply the valleytronic functionality, it makes the generation of highly polarized valley currents less plausible. We investigate quantum adiabatic valley pumping in (0 0 1) surface of these TCIs and show that applying shear strains and exchange field gives the possibility of control and manipulation of the valley resolved currents with high polarizations. Interchange of polarizations, simply by turning the tensile strain into compressive mode and vice versa, highlights the potential application for valleytronic switching process. Furthermore, since the surface states are robust against disorders, we can increase the lengths of driving regions and pump significantly larger currents without breaking the coherency of the quantum transport regime.

Characterization of topological band structures away from the Fermi level by the anomalous Nernst effect

Resolving the structure of energy bands in transport experiments is a major challenge in condensed matter physics and material science. Sometimes, however, traditional electrical conductance or resistance measurements only provide very small signals, and thus limit the ability to obtain direct band structure information. In this case, it has been proven beneficial to employ thermoelectric measurements which are sensitive to the first derivative of the density of states with respect to energy, rather than to its value itself. Due to the large interest in topological effects these days, it is important to identify a similar concept for detecting the Berry curvature in a band structure. Nowadays, the common way to access the Berry curvature directly via measurements is the anomalous Hall effect, but the corresponding signal can be too small to be detected when the topological features of the band structure lie too far off the Fermi level. In this work we propose to investigate topological band structure features utilizing the anomalous Nernst effect which is tied to the derivative of the anomalous Hall effect with respect to energy. Thereby, also signatures become resolvable, which are elusive in anomalous Hall measurements. We demonstrate the underlying mechanisms for a minimal effective four-band model and exemplary for the real Heusler compounds Co$_2$Fe$X$ ($X$=Ge,Sn), which host topological nodal lines about 100 meV above the Fermi level. This work demonstrates that anomalous Nernst measurements can be an effective tool for the characterization of topological band structures, both at room temperature and in the quantum transport regime at cryogenic temperatures.

Effect of Landau quantization on linear magnetoresistance of a periodically modulated two-dimensional electron gas

The linear response of two-dimensional electron gas in a perpendicular magnetic field in the presence of a spatially dependent classically smooth electrostatic potential is studied theoretically, by application of the Kubo formula for nonlocal conductivity tensor. In the classical transport regime, a general expression for the conductivity tensor through the correlation functions of the homogeneous electron gas is derived. The quantum transport regime, when Landau quantization is essential, is studied for the case of unidirectional periodic potential modulation. Apart from the Shubnikov-de Haas oscillations, the resistivity can demonstrate quantum oscillations with larger periods and smaller amplitudes, which survive when temperature increases. These oscillations exist when the modulation amplitude considerably exceeds the cyclotron energy so the Landau subbands, formed out of the Landau levels by the modulation potential, overlap in the energy domain. Both diagonal components of the resistivity tensor demonstrate oscillations related to modification of the density of states by the modulation. In addition, the resistivity component perpendicular to the modulation axis, which is caused by the scattering-assisted hopping transport, shows another kind of oscillations related to enhancement of the hopping probability when the guiding center of cyclotron orbit shifts by the doubled cyclotron radius. It is suggested that such high-temperature oscillations can be detected under conditions when the modulation period considerably exceeds the cyclotron radius.

Transient spin current under a thermal switch

In this work, we explore the possibility of enhancing a spin current under a thermal switch—viz. instantaneously connecting the central transport region to two leads in individual thermal equilibrium. Using the nonequilibrium Green’s function method for the transient spin current, we obtain a closed-form solution, which is applicable across the whole nonlinear quantum transport regime with a significant reduction of computational complexity. Furthermore, we perform a model calculation on a single-level quantum dot with Lorentzian linewidth. It shows that the transient spin current may vary spatially, causing spin accumulation or depletion in the central region. Moreover, general enhancement of the spin current in the transient regime is observed. In particular, the in-plane components of the transient spin current may increase by 2–3 orders of magnitude compared to the steady-state thermoelectric spin current under a temperature difference of 30 K. Our research demonstrates that ultrafast enhancement of spin currents can be effectively achieved by thermal switches.

Integrated photonic quantum walks

Over the last 20 years quantum walks (QWs) have gained increasing interest in the field of quantum information science and processing. In contrast to classical walkers, quantum objects exhibit intrinsic properties like non-locality and non-classical many-particle correlations, which renders QWs a versatile tool for quantum simulation and computation as well as for a deeper understanding of genuine quantum mechanics. Since they are highly controllable and hardly interact with their environment, photons seem to be ideally suited quantum walkers. In order to study and exploit photonic QWs, lattice structures that allow low loss coherent evolution of quantum states are demanded. Such requirements are perfectly met by integrated optical waveguide devices that additionally allow a substantial miniaturization of experimental settings. Moreover, by utilizing the femtosecond direct laser writing technique three-dimensional waveguide structures are capable of analyzing QWs also on higher dimensional geometries. In this context, advances and findings of photonic QWs are discussed in this review. Various concepts and experimental results are presented covering, such as different quantum transport regimes, the Boson sampling problem, and the discrete fractional quantum Fourier transform.

Theory of quantum transport in disordered systems driven by voltage pulse

Predicting time-dependent quantum transport in the transient regime is important for understanding the intrinsic dynamic response of a nanodevice and for predicting the limit of how such a device can switch on or off a current. Theoretically, this problem becomes quite difficult to solve when the nanodevice contains disorder because the calculated transient current must be averaged over many disorder configurations. In this work, we present a theoretical formalism to calculate the configuration averaged time-dependent current flowing through a phase coherent device containing disorder sites where the transient current is driven by sharply turning on and off the external bias voltage. Our theory is based on the Keldysh nonequilibrium Green's function (NEGF) formalism and is applicable in the far from equilibrium nonlinear response quantum transport regime. The effects of disorder scattering are dealt with by the coherent potential approximation (CPA) extended in the time domain. We show that after approximations such as CPA and vertex corrections for calculating the multiple impurity scattering in the transient regime, the derived NEGFs perfectly satisfy a Ward identity. The theory is quantitatively verified by comparing its predictions to the exact solution for a tight-binding model of a disordered two-probe transport junction.

Ballistic Transport in Graphene Antidot Lattices.

The bulk carrier mobility in graphene was shown to be enhanced in graphene-boron nitride heterostructures. However, nanopatterning graphene can add extra damage and drastically degrade the intrinsic properties by edge disorder. Here we show that graphene embedded into a heterostructure with hexagonal boron nitride (hBN) on both sides is protected during a nanopatterning step. In this way, we can prepare graphene-based antidot lattices where the high mobility is preserved. We report magnetotransport experiments in those antidot lattices with lattice periods down to 50 nm. We observe pronounced commensurability features stemming from ballistic orbits around one or several antidots. Due to the short lattice period in our samples, we can also explore the boundary between the classical and the quantum transport regime, as the Fermi wavelength of the electrons approaches the smallest length scale of the artificial potential.

Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.

In semiconductor heterostructures with a type II band alignment, such as GaSb-InAs, conduction can be tuned from electron- to hole-dominated using an electrostatic gate. However, traditional conductance measurements give no direct information on the carrier type, and thus limit the ability to distinguish transport effects originating from the two materials. Here, we employ thermovoltage measurements to GaSb/InAs core-shell nanowires, and reliably identify the dominant carrier type at room temperature as well as in the quantum transport regime at 4.2 K, even in cases where the conductance measurement does not allow for such a distinction. In addition, we show that theoretical modeling using the conductance data as input can reproduce the measured thermovoltage under the assumption that electron and hole states shift differently in energy with the applied gate voltage.

Spin-valley relaxation and quantum transport regimes in two-dimensional transition-metal dichalcogenides

Quantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transition metal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin relaxation of carriers depends on their areal density and show that it vanishes for holes near the band edge, leading to the density-independent spin diffusion length, and we develop a theory of weak localisation/antilocalisation, describing the crossovers between the orthogonal, double-unitary and symplectic regimes of quantum transport in TMDCs.

Conductance fluctuation of edge-disordered graphene nanoribbons: Crossover from diffusive transport to Anderson localization

Conductance fluctuation of edge-disordered graphene nanoribbons (ED-GNRs) is examined using the non-equilibrium Green's function technique combined with the extended Hückel approximation. The mean free path λ and the localization length ξ of the ED-GNRs are determined to classify the quantum transport regimes. In the diffusive regime where the length Lc of the ED-GNRs is much longer than λ and much shorter than ξ, the conductance histogram is given by a Gaussian distribution function with universal conductance fluctuation. In the localization regime where Lc≫ξ, the histogram is no longer the universal Gaussian distribution but a lognormal distribution that characterizes Anderson localization.

ChemInform Abstract: Spectroscopic Signatures of Quantum‐Coherent Energy Transfer

AbstractReview: 52 refs.