Applications In Quantum Photonics Research Articles

Coupling Spin Defects in Hexagonal Boron Nitride to Monolithic Bullseye Cavities.

Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that boron vacancy spin defects couple to the monolithic hBN cavity system and exhibit a 6.5-fold enhancement. In addition, by comparative finite-difference time-domain modeling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal-to-noise ratio. Thus, our experimental results, supported by simulations, constitute a first step toward integration of hBN spin defects with photonic resonators for a scalable spin-photon interface.

Fabrication of Photonic Resonators in Bulk 4H‐SiC

AbstractThe design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work, a Faraday cage‐based oblique angle etch method is applied to fabricate various functional photonic devices from 4H Silicon Carbide (SiC)—a material that has attracted attention in recent years, due to its potential in optomechanics, nonlinear optics, and quantum information. The processing conditions are detailed and the geometrical and optical characteristics of the fabricated devices are thoroughly addressed. Employing photoluminescence measurements high‐quality factors are demonstrated for suspended microring resonators of up to 3500 in the visible range. Such devices will be applicable in the future to augment the properties of SiC in integrated on chip quantum photonics.

Tunable dual-channel ultra-narrowband Bragg grating filter on thin-film lithium niobate.

We demonstrate dual-channel phase-shifted Bragg grating filters in the telecom band on thin-film lithium niobate. These integrated tunable ultra-narrow linewidth filters are crucial components for optical communication and sensing systems, as well as future quantum-photonic applications. Thin-film lithium niobate is an emerging platform suitable for these applications and has been exploited in this Letter. The demonstrated device has an extinction ratio of 27 dB and two channels with close linewidths of about 19 pm (quality factor of ${8} \times {{10}^4}$), separated by 19 GHz. The central wavelength could be efficiently tuned using the high electro-optic effect in lithium niobate with a tuning factor of 3.83 pm/V. This demonstration can be extended to tunable filters with multiple channels, along with desired frequency separations and optimized tunability, which would be useful for a variety of complex photonic integrated circuits.

Near‐Zero Index Photonic Crystals with Directive Bound States in the Continuum

AbstractNear‐zero‐index platforms arise as a new opportunity for light manipulation with boosting of optical nonlinearities, transmission properties in waveguides, and constant phase distribution. In addition, they represent a solution to impedance mismatch faced in photonic circuitry offering several applications in quantum photonics, communication, and sensing. However, their realization is limited to the availability of materials that could exhibit such low index. For materials used in the visible and near‐infrared wavelengths, the intrinsic losses annihilate most of near‐zero index properties. The design of all‐dielectric photonic crystals with specific electromagnetic modes overcomes the issue of intrinsic losses while showing effective mode index near zero. Nonetheless, these modes strongly radiate to the surrounding environment, greatly limiting the devices applications. Here, a novel all‐dielectric photonic crystal structure is explored that is able to sustain effective near‐zero‐index modes coupled to directive bound‐states in the continuum in order to decrease radiative losses, opening extraordinary opportunities for radiation manipulation in nanophotonic circuits. Moreover, its relatively simple design and phase stability facilitate integration and reproducibility with other photonic components.

Racetrack microresonator based electro-optic phase shifters on a 3C silicon-carbide-on-insulator platform.

We report, to the best of our knowledge, the first demonstration of integrated electro-optic (EO) phase shifters based on racetrack microresonators on a 3C silicon-carbide-on-insulator (SiCOI) platform working at near-infrared wavelengths. By applying DC voltage in the crystalline axis perpendicular to the waveguide plane, we have observed optical phase shifts from the racetrack microresonators whose loaded quality ($ Q $) factors are $\sim\! {30,\!000}$. We show voltage-length product (${{V}_{\pi}} \cdot {{L}_{ \pi}}$) of ${118}\;{{\rm V}\cdot{\rm cm}}$, which corresponds to an EO coefficient ${{r}_{41}}$ of 2.6 pm/V. The SiCOI platform can be used to realize tunable silicon carbide integrated photonic devices that are desirable for applications in nonlinear and quantum photonics over a wide bandwidth that covers visible and infrared wavelengths.

Metasurfaces for quantum photonics

Rapid progress in the development of metasurfaces allowed to replace bulky optical assemblies with thin nanostructured films, often called metasurfaces, opening a broad range of novel and superior applications to the generation, manipulation, and detection of light in classical optics. Recently, these developments started making a headway in quantum photonics, where novel opportunities arose for the control of nonclassical nature of light, including photon statistics, quantum state superposition, quantum entanglement, and single-photon detection. In this Perspective, we review recent progress in the field of quantum-photonics applications of metasurfaces, focusing on innovative and promising approaches to create, manipulate, and detect nonclassical light.

Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride.

We demonstrate the fabrication of large-scale arrays of single-photon emitters (SPEs) in hexagonal boron nitride (hBN). Bottom-up growth of hBN onto nanoscale arrays of dielectric pillars yields corresponding arrays of hBN emitters at the pillar sites. Statistical analysis shows that the pillar diameter is critical for isolating single defects, and diameters of ∼250 nm produce a near-unity yield of a single emitter at each pillar site. Our results constitute a promising route toward spatially controlled generation of hBN SPEs and provide an effective and efficient method to create large-scale SPE arrays. The results pave the way to scalability and high throughput fabrication of SPEs for advanced quantum photonic applications.

Nano-structure made of donor-acceptor quantum dots embedded in three dimensional photonic crystals for all optical tunable quantum memory/switch applications

A robust, energy efficient, tunable as well as self-directed quantum structure made of two different sized QDs is proposed for switching and memory applications in quantum photonics. Three dimensional photonic crystal (PC) made of nonlinear polystyrene spheres is considered as the substrate to carry the closely located dots. Theoretical model based on density matrix approach is introduced to evaluate the physical features of the proposed system by taking in to consideration of the near field optical energy transfers whose spatial nature is characterized by a Yukawa-type potential. Furthermore, all couplings of excitons to thermal bath besides of the possible intra-dot relaxations are considered in modellings. Probabilities of the quantum states and switchings in between the states are studied systematically over time by exploring the populations of 8 possible configurations. In order to better understand the potential of the suggested structure to be utilized as a tunable quantum element, dependence of the possible absorption/dispersions and the population of each quantum state, to the structure temperature and features of the illuminating lights are discussed in detail. Results clearly reflect that energy transfer in subwavelength range is possible using the suggested system via combined effects of near field interactions and relaxations of energy levels. Then this study provides insight into design and fabrication of structures based on network of QDs embedded in PC that are both self-tunable as well as being controllable using external factors and thus meet the goals of integrated photonic circuits.

Reconfigurable photonics with on-chip single-photon detectors

Integrated quantum photonics offers a promising path to scale up quantum optics experiments by miniaturizing and stabilizing complex laboratory setups. Central elements of quantum integrated photonics are quantum emitters, memories, detectors, and reconfigurable photonic circuits. In particular, integrated detectors not only offer optical readout but, when interfaced with reconfigurable circuits, allow feedback and adaptive control, crucial for deterministic quantum teleportation, training of neural networks, and stabilization of complex circuits. However, the heat generated by thermally reconfigurable photonics is incompatible with heat-sensitive superconducting single-photon detectors, and thus their on-chip co-integration remains elusive. Here we show low-power microelectromechanical reconfiguration of integrated photonic circuits interfaced with superconducting single-photon detectors on the same chip. We demonstrate three key functionalities for photonic quantum technologies: 28 dB high-extinction routing of classical and quantum light, 90 dB high-dynamic range single-photon detection, and stabilization of optical excitation over 12 dB power variation. Our platform enables heat-load free reconfigurable linear optics and adaptive control, critical for quantum state preparation and quantum logic in large-scale quantum photonics applications.

Waveguide-coupled superconducting nanowire single-photon detectors based on femtosecond laser direct writing.

The implementation of quantum information technologies requires the development of integrated quantum chips. Femtosecond laser direct writing (FLDW) waveguides and superconducting nanowire single-photon detectors (SNSPDs) have been widely applied in integrated quantum photonic circuits. In this work, a novel FLDW waveguide-coupled SNSPD was designed and realized by integrating FLDW waveguides and conventional SNSPDs together. Through a COMSOL simulation, a waveguide end face-nanowire optical coupling structure was designed and verified. The simulation results showed that the FLDW waveguide-coupled SNSPD device, which had a target wavelength of 780 nm, can achieve 87% optical absorption. Then the preparation process of the FLDW waveguide-coupled SNSPD device was developed, and the fabricated device achieved a system detection efficiency of 1.7% at 10 Hz dark count rate. Overall, this method provides a feasible single-photon detector solution for future on-chip integrated quantum photonic experiments and applications.

Influence of sample momentum space features on scanning tunnelling microscope measurements.

Theoretical understanding of scanning tunnelling microscopy (STM) measurements involve electronic structure details of the STM tip and the sample being measured. Conventionally, the focus has been on the accuracy of the electronic state simulations of the sample, whereas the STM tip electronic state is typically approximated as a simple spherically symmetric s orbital. This widely used s orbital approximation has failed in recent STM studies where the measured STM images of subsurface impurity wave functions in silicon required a detailed description of the STM tip electronic state. In this work, we show that the failure of the s orbital approximation is due to the indirect band-gap of the sample material silicon (Si), which gives rise to complex valley interferences in the momentum space of impurity wave functions. Based on direct comparison of STM images computed from multi-million-atom electronic structure calculations of impurity wave functions in direct (GaAs) and indirect (Si) band-gap materials, our results establish that whilst the selection of STM tip orbital only plays a minor qualitative role for the direct band gap GaAs material, the STM measurements are dramatically modified by the momentum space features of the indirect band gap Si material, thereby requiring a quantitative representation of the STM tip orbital configuration. Our work provides new insights to understand future STM studies of semiconductor materials based on their momentum space features, which will be important for the design and implementation of emerging technologies in the areas of quantum computing, photonics, spintronics and valleytronics.

Post-Measurement Adjustment of the Coincidence Window in Quantum Optics Experiments

We report on an electronic coincidence detection circuit for quantum photonic applications implemented on a field-programmable gate array (FPGA), which records each the time separation between detection events coming from single-photon detectors. We achieve a coincidence window as narrow as 500 ps with a series of optimizations on a readily-available and affordable FPGA development board. Our implementation allows real-time visualization of coincidence measurements for multiple coincidence window widths simultaneously. To demonstrate the advantage of our high-resolution visualization, we certified the generation of polarized entangled photons by collecting data from multiple coincidence windows with minimal accidental counts, obtaining a violation of the Clauser-Horne-Shimony-Holt (CHSH) Bell inequality by more than 338 standard deviations. Our results have shown the applicability of our electronic design in the field of quantum information.

Recent Advances and Future Perspectives of Single‐Photon Avalanche Diodes for Quantum Photonics Applications

AbstractPhotonic quantum technologies promise a revolution of the world of information processing, from simulation and computing to communication and sensing, thanks to the many advantages of exploiting single photons as quantum information carriers. In this scenario, single‐photon detectors play a key role. On the one hand, superconducting nanowire single‐photon detectors (SNSPDs) are able to provide remarkable performance on a broad spectral range, but their applicability is often limited by the need of cryogenic operating temperatures. On the other hand, single‐photon avalanche diodes (SPADs) overcome the intrinsic limitations of SNSPDs by providing a valid alternative at room temperature or slightly below. In this paper, the authors review the fundamental principles of the SPAD operation and provide a thorough discussion of the recent progress made in this field, comparing the performance of these devices with the requirements of the quantum photonics applications. In the end, the authors conclude with their vision of the future by summarizing prospects and unbeaten paths that can open new perspectives in the field of photonic quantum information processing.

Single-photon emission from two-dimensional hexagonal boron nitride annealed in a carbon-rich environment

For quantum photonic applications, such as quantum communication, optical quantum information processing, and metrology, solid-state sources of single-photon emitters are highly needed. Recently, single-photon emitters in two-dimensional (2D) van der Waals materials have attracted tremendous attention because of their atomic thickness, allowing for high photon extraction efficiency and easy integration into photonic circuits. In particular, a defect hosted by 2D hexagonal boron nitride (hBN) is expected to be a promising candidate for next-generation single-photon sources due to its chemical and thermal stability and high brightness at room temperature. Here, we report an effective method for generating single-photon emission in mechanically exfoliated hBN flakes by annealing in a carbon-rich environment. The one-step annealing in a mixed atmosphere (Ar:CH4:H2 = 15:5:1) greatly increases the single-photon emitter density in hBN. The resulting single-photon emission shows high stability and brightness. Our results provide an effective method for generating room-temperature single-photon emitters in 2D hBN.

Superconducting Nanowire Photon-Number-Resolving Detectors Integrated with Current Reservoirs

Photon-number-resolving detectors (PNRDs) play pivotal roles in many quantum-photonic applications; and intrinsic and multiplexed PNRDs have been reported previously. However, for intrinsic PNRDs, the maximum resolvable photon number is limited to a few photons; for the multiplexed PNRDs, the fidelity generally decreases when the to-be-resolved photon number becomes large. Here, to resolve more photons with high fidelity, we report on combined PNRDs, based on a spatial multiplexing configuration of multiple elements, each capable of resolving a few photons. After setting up a model and calculating the fidelity, we propose a possible physical system to realize the combined PNRDs. The proposed detectors are based on the superconducting nanowire multiphoton detectors integrated with current reservoirs that we recently reported, but are designed and configured into PNRDs. Specifically, information about the detected photon numbers is stored in the format of the supercurrent in the current reservoir and then readout by an integrated yTron. We present in detail the operating principle and show a design that can resolve up to 11 photons with high fidelity.

Optical Repumping of Resonantly Excited Quantum Emitters in Hexagonal Boron Nitride

Resonant excitation of solid-state quantum emitters enables coherent control of quantum states and generation of coherent single photons, which are required for scalable quantum photonics applications. However, these systems can often decay to one or more intermediate dark states or spectrally jump, resulting in the lack of photons on resonance. Here, we present an optical co-excitation scheme which uses a weak non-resonant laser to reduce transitions to a dark state and amplify the photoluminescence from quantum emitters in hexagonal boron nitride (hBN). Utilizing a two-laser repumping scheme, we achieve optically stable resonance fluorescence of hBN emitters and an overall increase of ON time by an order of magnitude compared to only resonant excitation. Our results are important for the deployment of atom-like defects in hBN as reliable building blocks for quantum photonic applications.

Control of the 3-Fold Symmetric Shape of Group III-Nitride Quantum Dots: Suppression of Fine-Structure Splitting.

Controlling the in-plane symmetry of wide-bandgap semiconductor quantum dots (QDs) is essential for room temperature quantum photonic applications using polarization entangled photon pairs. Herein, we report the formation of 3-fold symmetric group III-nitride QDs at the apex of a triangular pyramid via a self-limited growth mechanism. We employed the in-plane rotational symmetry of the c-plane of a Wurtzite crystal and the large built-in piezoelectric field to reduce fine-structure splitting. The QDs exhibit emission that is distinguishable from that of sidewall quantum wells, and the biexciton-exciton cascade possesses a single-photon nature. We observed the relatively low optical polarization anisotropy and small fine structure splitting under the measurement limit (270 μeV) with the 3-fold symmetric QD. In contrast with current strategies that consider group III-nitride QDs as strongly polarized single-photon emitters, our approach for controlling the QD symmetry provides a new perspective on such QDs, as polarization-entangled photon pairs.

Lithium niobate photonic-crystal electro-optic modulator

Modern advanced photonic integrated circuits require dense integration of high-speed electro-optic functional elements on a compact chip that consumes only moderate power. Energy efficiency, operation speed, and device dimension are thus crucial metrics underlying almost all current developments of photonic signal processing units. Recently, thin-film lithium niobate (LN) emerges as a promising platform for photonic integrated circuits. Here, we make an important step towards miniaturizing functional components on this platform, reporting high-speed LN electro-optic modulators, based upon photonic crystal nanobeam resonators. The devices exhibit a significant tuning efficiency up to 1.98 GHz V−1, a broad modulation bandwidth of 17.5 GHz, while with a tiny electro-optic modal volume of only 0.58 μm3. The modulators enable efficient electro-optic driving of high-Q photonic cavity modes in both adiabatic and non-adiabatic regimes, and allow us to achieve electro-optic switching at 11 Gb s−1 with a bit-switching energy as low as 22 fJ. The demonstration of energy efficient and high-speed electro-optic modulation at the wavelength scale paves a crucial foundation for realizing large-scale LN photonic integrated circuits that are of immense importance for broad applications in data communication, microwave photonics, and quantum photonics.

Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes

Excitonic properties in quantum dot (QD) structure are essential properties for applications in quantum computing, cryptography, and photonics. Top-down fabrication and bottom-up growth by self-assembling for forming the QDs have shown their usefulness. These methods, however, still inherent issues in precision integrating the regimes with high reproducibility and positioning to realize the applications with on-demand quantum properties on Si platforms. Here, we report on a rational synthesis of embedding atomically thin InAs in nanowire materials on Si by selective-area regrowth. An extremely slow growth rate specified for the synthesis demonstrated to form smallest quantum structures reaching nuclear size, and provided good controllability for the excitonic states on Si platforms. The system exhibited sharp photoluminescence spectra originating from exciton and bi-exciton suggesting the carriers were confined inside the nuclei. The selective-area regrowth would open new approach to integrate the exciton states with Si platforms as building-blocks for versatile quantum systems.

Thermally-Reconfigurable Silicon Photonic Devices and Circuits

Reconfigurable photonic integrated devices and circuits are very important for many applications. Among various mechanisms for realizing reconfigurability, thermo-optic effect is popular because of the availability for many materials, the design simplicity and the fabrication ease. In particular, silicon has a large thermo-optic coefficient as well as a high heat conductivity, and thus it is promising to realize efficient thermally-reconfigurable silicon photonic integrated devices and circuits. Recent progress is reviewed in this paper. First, thermally-tunable silicon photonic filters based on different structures are summarized, including microring resonators (MRRs) and MRRs-assisted Mach-Zehnder interferometers (MZIs). Second, silicon photonic switches based on MZIs and MRRs are reviewed. Finally, a review is given for thermally-reconfigurable silicon photonic integrated circuits developed for the applications in quantum photonics, microwave photonics, and optical interconnects.