Longitudinal ρxx(B) and Hall ρxy(B) magnetoresistances are measured as a function of transverse magnetic field in n-InGaAs/GaAs nanostructures with strongly coupled double quantum wells in the temperature range T = 0.05–60 K and magnetic fields B = 0–16 T before and after low-temperature infrared irradiation. The appearance of persistent photoconductivity causes the type of the temperature dependence of resistance to be changed: from insulator-like (dρ/dT < 0) for T ≤ 8 K to metallic-like (dρ/dT > 0) at higher temperatures. It is shown that this is related to the temperature dependence of electron density. The strong temperature dependence of electron mobility observed before the illumination practically disappears after infrared irradiation.