Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface

Abstract

Abstract Magnetic impurity behavior have been studied in type II p-GaInAsSb/p-InAs heterostructures grown by liquid-phase epitaxy on InAs substrate heavily doped with manganese ( p =(5−7)×10 18 cm −3 ). Ferromagnetic properties of these structures become apparent during observation of anomalous Hall effect and negative magnetoresistance (Δ ρ ⊥ /ρ ) in low magnetic fields H =3–20 kOe at T =77–200 K. High value of negative magnetoresistance up to 30% and its quadratic dependence on a magnetic field were found. Effective magnetic moment M *=200 μ B and Curie temperature T C =200 K were evaluated. Contribution of Mn δ-layer placed on GaInAsSb epilayer was manifested in vertical quantum magnetotransport in high magnetic fields ( B >8 T) and low temperatures (1.5–4.2 K). Presence of the narrow layer of Mn can control over spin-oriented tunneling of electrons from a semimetal channel across the type II broken-gap heterointerface.