Abstract
Anomalous positive or negative magnetoresistance at low temperatures has been observed in germanium, InSb, gray tin, InAs, GaAs, and C.1–7 Some of the more extensive investigations have revealed certain similarities which may be common to the anomalous magnetoresistance in semiconductors: (1) The magnitude of the anomalous magnetoresistance increases with decreasing temperature. (2) For a given semiconductor the anomalous magnetoresistance reaches a maximum for a particular impurity concentration. (3) In some cases the magnetoresistance can be represented as the sum of an ordinary term with quadratic field dependence and an extraordinary term which saturates with increasing field. A negative magnetoresistance was once observed in tellurium,8 but in subsequent investigations, using zone refined specimens, no such anomaly was detected.9 This paper is a progress report of some new features of this anomalous negative magnetoresistance in tellurium.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
