A narrow linewidth tunable laser source is a critical component in various fields, including laser radar, quantum information, coherent communication, and precise measurement. Tunable external cavity diode lasers (ECDLs) demonstrate excellent performance, such as narrow linewidth, wide tunable range, and low threshold current, making them increasingly versatile and widely applicable. This article provides an overview of the fundamental structures and recent advancements in external cavity semiconductor lasers. In particular, we discuss external cavity semiconductor lasers based on quantum well and quantum dot gain chips. The structure of the gain chip significantly influences laser’s performance. External cavity quantum well laser has a narrower linewidth, higher power, and better mode stability. Conversely, external cavity quantum dot laser provides a wider tunable range and a remarkably lower threshold current. Furthermore, dual-wavelength external cavity tunable diode lasers are gaining importance in applications such as optical switching and terahertz radiation generation. With the continuous optimization of chips and external cavity structures, external cavity diode lasers are increasingly recognized as promising light sources with narrow linewidth and wide tunability, opening up broader application prospects.
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